WO2017195933A1 - Support porte-substrat et dispositif de traitement de substrat l'utilisant - Google Patents

Support porte-substrat et dispositif de traitement de substrat l'utilisant Download PDF

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Publication number
WO2017195933A1
WO2017195933A1 PCT/KR2016/007562 KR2016007562W WO2017195933A1 WO 2017195933 A1 WO2017195933 A1 WO 2017195933A1 KR 2016007562 W KR2016007562 W KR 2016007562W WO 2017195933 A1 WO2017195933 A1 WO 2017195933A1
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WO
WIPO (PCT)
Prior art keywords
substrate
wire
susceptor
frame
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/007562
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English (en)
Korean (ko)
Inventor
김용현
박창균
김영기
김덕호
마창수
민경인
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
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Filing date
Publication date
Application filed by Jusung Engineering Co Ltd filed Critical Jusung Engineering Co Ltd
Publication of WO2017195933A1 publication Critical patent/WO2017195933A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3402—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7622—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a substrate support holder for supporting a substrate using a wire and a substrate processing apparatus using the same.
  • the substrate processing apparatus is used in the manufacture of semiconductor devices, flat panel displays, thin film solar cells, and the like, and is roughly classified into a vapor deposition apparatus (Annealing Apparstus) and an annealing apparatus (Annealing Apparstus).
  • FIG. 1 is a schematic cross-sectional view of a conventional substrate processing apparatus, which will be described.
  • the conventional substrate processing apparatus includes a chamber 11 which provides a space in which the substrate S is loaded and processed, and a susceptor in which the substrate S is mounted and supported therein.
  • Susceptor 13 is provided to be elevated.
  • substrate S is mounted in the arm Arm of a robot, carried in the chamber 11, or carried out from the chamber 11.
  • the arm of the robot When the substrate S mounted on the upper surface of the arm of the robot is to be mounted on the susceptor 13, the arm of the robot is lowered to mount the substrate S on the susceptor 13. However, when the arm of the robot is lowered, the lower surface of the arm of the robot contacts the upper surface of the susceptor 13 first, so that it is difficult to mount the substrate S on the susceptor 13.
  • a plurality of substrates S are received from the arm Arm of the robot and mounted on the susceptor 13, or a plurality of substrates S mounted on the susceptor 13 are separated from the susceptor 13.
  • the support pin 15 is installed to pass through the susceptor 13.
  • the susceptor 13 is lowered to protrude the upper end of the support pin 15 onto the upper surface of the susceptor 13.
  • the substrate S mounted on the arm of the robot is supported by the support pin 15.
  • the susceptor 13 is raised, the substrate S supported by the support pin 15 is mounted and supported on the upper surface of the susceptor 13.
  • the susceptor 13 is lowered. Then, since the upper end of the support pin 15 protrudes above the upper surface of the susceptor 13, there is a gap between the substrate S supported on the upper end of the support pin 15 and the upper surface of the susceptor 13. . In this state, the arm of the robot is inserted between the susceptor 13 and the substrate S, and then the arm of the robot is raised to mount the substrate S on the arm of the robot.
  • Particles are generated during the processing of the substrate S.
  • the particles may be deposited in the outer circumferential surface of the support pin 15 or the through hole 13a of the susceptor 13 through which the support pin 15 passes.
  • the susceptor 13 and the support pin when the susceptor 13 is raised and lowered by the particles deposited in the support pin 15 or the through hole 13a of the susceptor 13. 15 may interfere, which may damage the support pin 15.
  • the support pin 15 since the support pin 15 may rotate when the susceptor 13 moves up and down, the position of the substrate S supported by the support pin 15 may deviate from a predetermined position. This may lower productivity.
  • a substrate processing apparatus for supporting the substrate S by using a plurality of wires has been developed and used.
  • the wire is interposed between the substrate and the susceptor. For this reason, when the substrate is mounted on the susceptor and processed, the portion of the substrate where the wire is located and the portion of the substrate where the wire is not positioned may be treated differently. Therefore, there is a disadvantage that the reliability of the substrate is lowered.
  • An object of the present invention may be to provide a substrate support holder and a substrate processing apparatus using the same that can solve all the problems of the prior art as described above.
  • Another object of the present invention is to provide a substrate support holder that can improve the reliability of the substrate by configuring so that the portion of the substrate on which the wire for supporting the substrate is located and the portion of the substrate on which the wire is not located can be uniformly processed; It may be to provide a substrate processing apparatus used.
  • the frame is open one side of the arm that enters and exits the robot arm on which the substrate is mounted; One end and the other end of the frame is supported on one side of the open side and the opposite side facing the open one, respectively, and includes a plurality of wires (Wire) for supporting the substrate, the diameter of the wire is 0.1mm to 3mm Can be.
  • Wire wires
  • a substrate support holder spaced apart from the susceptor, and the diameter of the wire may be 0.1 mm to 3 mm.
  • the substrate support holder and the substrate processing apparatus using the same support the substrate by the wire of the substrate support holder, mount the substrate mounted on the arm of the robot in the susceptor, and then process the substrate.
  • a wire is formed in 0.1 mm-3.0 mm, at the time of processing of a board
  • the substrate and the susceptor have a spacing of 0.1 mm to 3.0 mm during processing of the substrate, since the entire portion of the substrate is uniformly processed, reliability of the substrate may be improved.
  • FIG. 1 is a schematic cross-sectional view of a conventional substrate processing apparatus.
  • FIG. 2 is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional plan view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a perspective view of the substrate support holder and susceptor shown in FIG.
  • 5 to 8 is a view showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 9 is an enlarged view of a portion “A” of FIG. 8.
  • FIG. 10 is a perspective view of a substrate support holder and susceptor according to another embodiment of the present invention.
  • FIG. 11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
  • At least one should be understood to include all combinations which can be presented from one or more related items.
  • the meaning of "at least one of the first item, the second item, and the third item" means not only the first item, the second item, or the third item, but also two of the first item, the second item, and the third item. A combination of all items that can be presented from more than one.
  • first item, second item and / or third item means two items of first item, second item or third item as well as first item, second item or third item. It means a combination of all items that can be presented from the above.
  • FIG. 2 is a front sectional view of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 3 is a plan sectional view of the substrate processing apparatus according to an embodiment of the present invention
  • FIG. 4 is a substrate support holder shown in FIG. A perspective view of the susceptor.
  • the substrate processing apparatus may include a chamber 110 that provides a space in which the substrate S (see FIG. 6) is carried in and processed, and the chamber ( 110 may include a chamber wall 111 having an upper surface opened and a lid 115 coupled to an open upper surface of the chamber wall 111.
  • One side of the chamber wall 111 may be formed with an entrance and exit 111a through which the arm 50 (see FIG. 6) of the robot on which the substrate S is mounted enters and exits.
  • a discharge port 111b may be formed to discharge process gas and by-products that do not participate.
  • a shower head 121 for injecting a thin film process gas to be formed in the substrate S may be installed at the lid 115, the upper side of the chamber 110, and the process gas is showered on the upper surface of the lid 115.
  • a gas supply pipe 125 for supplying the head 121 may be installed.
  • a susceptor 130 on which the substrate S is mounted and supported may be installed at an inner lower surface side of the chamber wall 111, which is a lower side of the chamber 110, and the susceptor 130 is provided to a driving means such as a motor or a cylinder. It can be installed to be elevated and rotatable. In the susceptor 130, a heater or the like may be installed to appropriately heat the substrate S during a process for treating the substrate S.
  • the substrate S is loaded and stored on the outside of the chamber 110.
  • the substrate S loaded on the outside of the chamber 110 is mounted on the arm 50 of the robot and loaded into the chamber 110, then mounted on the susceptor 130, and mounted on the susceptor 130.
  • the substrate S is mounted on the arm 50 of the robot and taken out from the chamber 110.
  • the substrate 110 receives the substrate S mounted on the arm 50 of the robot and is mounted on the susceptor 130, and the susceptor 130 mounts the substrate S mounted on the susceptor 130.
  • the substrate support holder 200 may be installed to be spaced apart from each other.
  • the substrate support holder 200 may include a frame 210 and a plurality of wires 220, and may be supported and installed on an inner surface of the chamber wall 111 of the chamber 110 above the susceptor 130.
  • the frame 210 may be formed in a quadrangular shape, and one surface 210a facing the surface of the chamber wall 111 on which the doorway 111a is formed may be opened to allow the arm 50 of the robot on which the substrate S is mounted. Can enter and exit.
  • One surface 210a of the frame 210 may have an entire portion open, and one portion may be opened.
  • the frame 210 is supported by the lower surface of the plurality of support pins 113 installed on the inner surface of the chamber wall 111, and the support grooves 212 into which the support pins 113 are inserted into the lower surface of the frame 210. This can be formed. At this time, it is obvious that the plurality of support pins 113 should be formed at the same height based on the susceptor 130.
  • the wire 220 is supported at one end and the other end on the open side (210a) of the frame 210 and on the side of the opposite surface (210b) facing the open surface (210a), respectively, to support the substrate (S).
  • the susceptor 130 may have an upper portion having a smaller size than the lower portion, and the substrate support holder 200 may be elevated by the susceptor 130.
  • the lower edge portion of the susceptor 130 may contact the lower surface of the frame 210, and the upper portion of the susceptor 130 may be inside the frame 210.
  • the wire 220 may be in contact with the wire 220 and the substrate S supported by the wire 220. Therefore, when the susceptor 130 rises and the lower edge portion of the susceptor 130 contacts the bottom surface of the frame 210, the susceptor 130 raises the frame 210.
  • the frame 210 raised by the susceptor 130 descends when the susceptor 130 descends. Therefore, the substrate support holder 200 is lifted by the lift of the susceptor 130.
  • the entire portion of the wire 220 may support the substrate S when the wire 220 does not sag.
  • the frame 210 may be provided with a tension control module 230 for supporting the wire 220 and at the same time adjust the tension of the wire 220.
  • the tension control module 230 may be installed on each of the open surface 210a and the opposing surface 210b of the frame 210 to face each other, and support one end side and the other end side of the wire 220, respectively. At the same time, the tension of the wire 220 can be adjusted.
  • an open surface 210a of the frame 210 connects one side and the other side of the open surface 210a of the frame 210 and a bracket 214 to which the tension control module 230 is installed is installed. Can be.
  • the tension control module 230 may include a support block 231 and an adjustment nut 235.
  • the support block 231 may be installed on the bracket 214 and the opposing surface 210b, respectively, and the support block 231 installed on the bracket 214 may be supported while the wire 220 passes through one end thereof. The other end side of the wire 220 may be supported while passing through the support block 231 installed on the opposing surface 210b.
  • the adjustment nut 235 is rotatably coupled to the end side of the wire 220 passing through the support block 231, and expands and contracts the wire 220 based on the support block 235 as it rotates. You can. That is, the adjustment nut 235 can stretch and contract the wire 220 between the support block 235 and the support block 235 as the forward and reverse rotation. In order to allow the wire 220 to be stretched and contracted by the rotation of the adjustment nut 235, spirals that engage with spirals of the adjustment nut 235 may be formed on the outer circumferential surfaces of both ends of the wire 220.
  • the screw is connected to the end side of the wire 220, and the adjustment nut 235 is fastened to the screw Can be.
  • the tension of the wire 220 is adjusted using the adjusting nut 235 so that the wire 220 does not sag and maintains a straight line, the substrate S may be contacted and supported on the entire portion of the wire 220. have.
  • An elastic member 237 may be installed between the support block 231 and the adjustment nut 235 to elastically support the adjustment nut 235 to the outside of the support block 231.
  • the edge portion of the substrate S which is a non-display area, may be in contact with and supported on the inner peripheral surface side of the upper surface of the frame 210.
  • the upper surface of the frame 210 and the outermost outer peripheral surface of the wire 220 is preferably located at the same height relative to the susceptor 130 or the lower surface of the frame 210.
  • the wire 220 is disposed between the susceptor 130 and the substrate S when the substrate S is processed. Is published. In this case, if the diameter of the wire 220 is not appropriate, the portion of the substrate S on which the wire 220 is located and the portion of the substrate S on which the wire 220 is not positioned may be treated differently.
  • the diameter of the wire 220 may be formed to be 0.1 mm to 3 mm so that the entire portion of the substrate S may be uniformly processed. have.
  • the reason why the diameter of the wire 220 is formed to be 0.1 mm to 3 mm is that if the diameter of the wire 220 is less than 0.1 mm, the wire 220 may have weak rigidity, and the diameter of the wire 220 may be 3 mm. This is because when the portion of the substrate S on which the wire 220 is located is discolored, the uniformity of the substrate S may decrease.
  • Experimental conditions include general plasma enhanced chemical vapor deposition (PECVD) process conditions for depositing a thin film on a substrate using plasma, a process for manufacturing a semiconductor device, and general MOCVD (metal oxide film) formed on a substrate using a chemical reaction. Metal Organic Chemical Vapor Deposition) under the process conditions.
  • PECVD plasma enhanced chemical vapor deposition
  • MOCVD metal oxide film
  • Table 1 is a photograph showing the state of the substrate after processing the substrate in a state of supporting the substrate using a substrate support holder according to an embodiment of the present invention.
  • the substrate S is not affected by the wire 220, the substrate S It can be seen that the entire area of the) is treated uniformly.
  • the wire 220 is preferably formed of any one selected from aluminum, stainless steel, and titanium in consideration of rigidity and corrosion resistance.
  • the insertion path into which the wire 220 is inserted may be recessed on the upper surface of the susceptor 130.
  • the diameter of the wire 220 is 0.1mm ⁇ to the susceptor 130 without forming the insertion path It is formed in 3 mm.
  • 5 to 8 are views showing the loading of the substrate into the substrate processing apparatus according to an embodiment of the present invention, it will be described.
  • the susceptor 130 is raised to be in contact with the substrate support holder 200 as an initial state.
  • the susceptor 130 is lowered, and then the substrate S is moved by the arm 50 of the robot.
  • the arm 50 of the robot is positioned in the chamber 110 so that the substrate S is positioned above the substrate support holder 200.
  • the arm 50 of the robot is lowered to support the substrate S mounted on the arm 50 of the robot to the wire 220 of the substrate support holder 200.
  • the robot arm 50 is pulled out of the chamber 110, and then the susceptor 130 is raised to support the substrate S with the susceptor 130. What is necessary is just to process the board
  • the susceptor 130 is lowered, and the arm 50 of a robot is inserted below the board
  • the arm 50 of the robot is raised to support the substrate S with the arm 50 of the robot, and then the arm 50 of the robot may be removed from the chamber 110.
  • the substrate support holder 200 supports the lower surface of the substrate S with the wire 220, the substrate S is susceptor 130 when the substrate S is processed. Spaced apart, which will be described with reference to FIG. 9. 9 is an enlarged view of a portion “A” of FIG. 8.
  • the wire 220 of the substrate support holder 200 is placed between the substrate S and the susceptor 130, when the substrate S is processed, the substrate S and the susceptor 130 are processed.
  • the substrate support holder and the substrate processing apparatus using the same support the substrate S by the wire 220 of the substrate support holder 200, and the substrate S mounted on the arm 50 of the robot. ) Is mounted on the susceptor 130, and then the substrate S is processed.
  • the diameter of the wire 220 is 0.1 mm to 3.0 mm, the substrate S is not affected by the wire 220 when the substrate S is processed. Therefore, the whole part of the board
  • the entire portion of the substrate S may be uniformly processed.
  • FIG. 10 is a perspective view of a substrate support holder and a susceptor according to another embodiment of the present invention, and only a difference from FIG. 4 will be described.
  • an end surface 316 having a vertical surface and a horizontal surface may be formed on the lower surface of the inner circumferential surface side of the frame 310 of the substrate support holder 300 according to another embodiment of the present invention.
  • the lower portion of the susceptor 130 is in contact with the horizontal surface of the cross section 316, and the upper portion of the susceptor 130 is positioned inside the frame 310.
  • the wire 320 may be in contact with the substrate supported by the wire 320.
  • FIG. 11 is a perspective view of a substrate support holder according to another embodiment of the present invention.
  • the distance D between the adjacent wires 420 and the wires 420 of the substrate support holder 400 may be provided as 590mm ⁇ 610mm. .
  • the experiment was carried out by mounting and supporting a substrate having a width x length of 1,100 mm x 1,250 mm only in the substrate support holder 400. That is, in a state where the susceptor 130 (refer to FIG. 4) is removed, the substrate is mounted and supported by the wire 420 of the substrate support holder 400.
  • interval D between () is 600 mm
  • the distance D between the wires 420 and the wires 420 adjacent to each other was 700 mm, the center portion of the substrate saged about 11 mm based on the wire 420.
  • the wire 420 is installed in parallel with the longitudinal of the substrate, and has a gap along the horizontal direction of the substrate.
  • the distance (D) between the wires 420 and the wires 420 adjacent to each other is too narrow, a lot of wires 420 are required, the cost increases, and the wires 420 adjacent to each other. Since the substrate may sag if the distance D between the wire 420 and the wire 420 is too wide, the distance D between the wire 420 and the wire 420 adjacent to each other is preferably 590 mm to 610 mm.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)

Abstract

L'invention porte sur un support porte-substrat et sur un dispositif de traitement de substrat l'utilisant. Selon la présente invention, le support porte-substrat et le dispositif de traitement de substrat l'utilisant supportent un substrat au moyen d'un fil du support porte-substrat de manière à charger sur un suscepteur le substrat chargé sur un bras d'un robot, puis à traiter le substrat. Toutefois, le diamètre du fil est formé dans une plage appropriée pour que, lorsque le substrat est traité, le substrat ne soit pas affecté par le fil. Par conséquent, toutes les parties du substrat sont traitées uniformément, ce qui permet d'améliorer la fiabilité du substrat. À savoir, s'il existe un espace compris entre 0,1 mm et 3,0 mm entre le substrat et le suscepteur lorsque le substrat est traité, toutes les parties du substrat sont traitées uniformément, ce qui permet d'améliorer la fiabilité du substrat.
PCT/KR2016/007562 2016-05-11 2016-07-12 Support porte-substrat et dispositif de traitement de substrat l'utilisant Ceased WO2017195933A1 (fr)

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KR1020160057525A KR20170127202A (ko) 2016-05-11 2016-05-11 기판지지홀더 및 이를 사용한 기판처리장치
KR10-2016-0057525 2016-05-11

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KR20190114383A (ko) 2018-03-30 2019-10-10 코오롱인더스트리 주식회사 유기발광 다이오드 패널의 봉지층 형성용 필름, 이 필름을 갖는 유기발광 다이오드 패널 및 그 제조방법

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KR101000602B1 (ko) * 2002-11-27 2010-12-10 도쿄엘렉트론가부시키가이샤 기판처리장치
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KR20150026758A (ko) * 2013-08-29 2015-03-11 박성우 평판 적재용 와이어랙의 와이어 장력 조절장치

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