WO2017196010A3 - 화학증폭형 네가티브형 포토레지스트 조성물 - Google Patents

화학증폭형 네가티브형 포토레지스트 조성물 Download PDF

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Publication number
WO2017196010A3
WO2017196010A3 PCT/KR2017/004451 KR2017004451W WO2017196010A3 WO 2017196010 A3 WO2017196010 A3 WO 2017196010A3 KR 2017004451 W KR2017004451 W KR 2017004451W WO 2017196010 A3 WO2017196010 A3 WO 2017196010A3
Authority
WO
WIPO (PCT)
Prior art keywords
type
amplified
chemically
photoresist composition
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/004451
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English (en)
French (fr)
Other versions
WO2017196010A2 (ko
Inventor
이승훈
이승현
이수진
최영철
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ycchem Co Ltd
Original Assignee
Youngchang Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youngchang Chemical Co Ltd filed Critical Youngchang Chemical Co Ltd
Priority to US16/098,706 priority Critical patent/US11586109B2/en
Priority to JP2019511333A priority patent/JP6837540B2/ja
Priority to CN201780029609.3A priority patent/CN109154776B/zh
Publication of WO2017196010A2 publication Critical patent/WO2017196010A2/ko
Publication of WO2017196010A3 publication Critical patent/WO2017196010A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 화학증폭형 네가티브 포토레지스트 조성물에 관한 것으로, 보다 상세하게는 특정 유기산 첨가물을 포함하여 종래 네가티브형 포토레지스트 대비 단파장 노광원에서 공정 마진을 개선하여, 반도체 공정에 적용하기에 적합한 화학증폭형 네가티브 포토레지스트 조성물을 개시한다.
PCT/KR2017/004451 2016-05-13 2017-04-26 화학증폭형 네가티브형 포토레지스트 조성물 Ceased WO2017196010A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US16/098,706 US11586109B2 (en) 2016-05-13 2017-04-26 Chemically-amplified-type negative-type photoresist composition
JP2019511333A JP6837540B2 (ja) 2016-05-13 2017-04-26 化学増幅型ネガ型フォトレジスト組成物
CN201780029609.3A CN109154776B (zh) 2016-05-13 2017-04-26 化学放大型负性光致抗蚀剂组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0058744 2016-05-13
KR1020160058744A KR101877029B1 (ko) 2016-05-13 2016-05-13 화학증폭형 네가티브형 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
WO2017196010A2 WO2017196010A2 (ko) 2017-11-16
WO2017196010A3 true WO2017196010A3 (ko) 2018-08-02

Family

ID=60267188

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/004451 Ceased WO2017196010A2 (ko) 2016-05-13 2017-04-26 화학증폭형 네가티브형 포토레지스트 조성물

Country Status (5)

Country Link
US (1) US11586109B2 (ko)
JP (1) JP6837540B2 (ko)
KR (1) KR101877029B1 (ko)
CN (1) CN109154776B (ko)
WO (1) WO2017196010A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물
US11550220B2 (en) 2019-10-31 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Negative tone photoresist for EUV lithography
KR102924097B1 (ko) * 2020-06-03 2026-02-09 에스케이하이닉스 주식회사 네가티브형 레지스트 중합체 및 이를 포함하는 네가티브형 레지스트 조성물
KR102883278B1 (ko) * 2024-06-28 2025-11-06 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051692A (ko) * 1999-11-15 2001-06-25 나카네 히사시 네가티브형 포토레지스트 패터닝 재료 및 이것을 이용한이온주입 및 금속도금기판의 제조방법
EP1666972A1 (en) * 2003-08-28 2006-06-07 Nissan Chemical Industries, Ltd. Polyamide acid-containing composition for forming antireflective film
KR20080088508A (ko) * 2007-03-29 2008-10-02 후지필름 가부시키가이샤 네가티브형 레지스트 조성물 및 그것을 사용한패턴형성방법
KR20150024267A (ko) * 2013-08-26 2015-03-06 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭형 네가티브형 레지스트 재료, 광경화성 드라이 필름 및 그의 제조 방법, 적층체, 패턴 형성 방법, 및 기판
KR101615980B1 (ko) * 2015-07-22 2016-04-29 영창케미칼 주식회사 반도체 패턴 형성을 위한 KrF 레이저용 네가티브형 포토레지스트 조성물

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0667413A (ja) 1992-08-20 1994-03-11 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
JP3206440B2 (ja) * 1996-06-28 2001-09-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US5908730A (en) * 1996-07-24 1999-06-01 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
JP3496916B2 (ja) 1997-06-19 2004-02-16 東京応化工業株式会社 電子線用ネガ型レジスト組成物
JP2000314961A (ja) * 1999-04-28 2000-11-14 Fuji Photo Film Co Ltd ネガ型画像記録材料
CN1916760B (zh) * 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
TWI242689B (en) * 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
JP2013068675A (ja) * 2011-09-20 2013-04-18 Jsr Corp フォトレジスト組成物及びネガ型パターン形成方法
JP5966328B2 (ja) * 2011-11-16 2016-08-10 Jsr株式会社 アレイ基板、液晶表示素子およびアレイ基板の製造方法
KR101901046B1 (ko) * 2011-12-09 2018-09-20 아사히 가세이 이-매터리얼즈 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 반도체 장치 및 표시체 장치
KR101812082B1 (ko) * 2012-03-27 2018-01-30 후지필름 가부시키가이샤 감활성 광선성 또는 감방사선성 조성물, 그것을 사용한 레지스트막, 레지스트 도포 마스크 블랭크스, 레지스트 패턴 형성 방법, 및 포토마스크
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
CN104641294B (zh) 2012-10-02 2019-08-23 日产化学工业株式会社 负型感光性树脂组合物
JP6047422B2 (ja) * 2013-02-21 2016-12-21 富士フイルム株式会社 感光性組成物、光硬化性組成物、化学増幅型レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9334795B2 (en) * 2013-08-06 2016-05-10 Pratt & Whitney Canada Corp. Rotary internal combustion engine with static oil seal
JP6270372B2 (ja) 2013-08-14 2018-01-31 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置
JP6327066B2 (ja) 2013-09-03 2018-05-23 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
TWI610925B (zh) 2013-10-24 2018-01-11 住友化學股份有限公司 鹽及含有該鹽之光阻組成物
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051692A (ko) * 1999-11-15 2001-06-25 나카네 히사시 네가티브형 포토레지스트 패터닝 재료 및 이것을 이용한이온주입 및 금속도금기판의 제조방법
EP1666972A1 (en) * 2003-08-28 2006-06-07 Nissan Chemical Industries, Ltd. Polyamide acid-containing composition for forming antireflective film
KR20080088508A (ko) * 2007-03-29 2008-10-02 후지필름 가부시키가이샤 네가티브형 레지스트 조성물 및 그것을 사용한패턴형성방법
KR20150024267A (ko) * 2013-08-26 2015-03-06 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭형 네가티브형 레지스트 재료, 광경화성 드라이 필름 및 그의 제조 방법, 적층체, 패턴 형성 방법, 및 기판
KR101615980B1 (ko) * 2015-07-22 2016-04-29 영창케미칼 주식회사 반도체 패턴 형성을 위한 KrF 레이저용 네가티브형 포토레지스트 조성물

Also Published As

Publication number Publication date
KR101877029B1 (ko) 2018-07-11
US11586109B2 (en) 2023-02-21
JP6837540B2 (ja) 2021-03-03
KR20170128709A (ko) 2017-11-23
CN109154776A (zh) 2019-01-04
CN109154776B (zh) 2022-06-28
JP2019523459A (ja) 2019-08-22
WO2017196010A2 (ko) 2017-11-16
US20190137871A1 (en) 2019-05-09

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