WO2018176583A1 - 一种像素结构及制造方法 - Google Patents

一种像素结构及制造方法 Download PDF

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Publication number
WO2018176583A1
WO2018176583A1 PCT/CN2017/083689 CN2017083689W WO2018176583A1 WO 2018176583 A1 WO2018176583 A1 WO 2018176583A1 CN 2017083689 W CN2017083689 W CN 2017083689W WO 2018176583 A1 WO2018176583 A1 WO 2018176583A1
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Prior art keywords
layer
polyelectrolyte
black photoresist
isolation region
photoresist layer
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English (en)
French (fr)
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李冬泽
陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to EP17904056.3A priority Critical patent/EP3605616B1/en
Priority to JP2019550249A priority patent/JP6899917B2/ja
Priority to PL17904056T priority patent/PL3605616T3/pl
Priority to US15/525,986 priority patent/US10367128B2/en
Priority to KR1020197031505A priority patent/KR102245587B1/ko
Publication of WO2018176583A1 publication Critical patent/WO2018176583A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a pixel structure and a method of fabricating the same.
  • Micro LEDs act as current-driven self-illuminating units, each of which emits light uniformly in all directions in space, thus losing most of the light energy in the process.
  • the invention provides a pixel structure and a manufacturing method, which can improve the light utilization efficiency of the micro light emitting diode.
  • a technical solution adopted by the present invention is to provide a pixel structure, the pixel structure includes: a substrate; a black photoresist layer deposited on the substrate, the black photoresist layer including a capacitor a cavity and an isolation region, the isolation region is disposed in the accommodating cavity; a polyelectrolyte layer, the polyelectrolyte layer is coated on the black photoresist layer except the isolation region; a metal nanoparticle layer The metal nanoparticle layer covers the polyelectrolyte layer; the micro light emitting diode is disposed on the isolation region; wherein the metal nanoparticle comprises Au, Ag, Cu, Ni, Co At least one of Pt and/or an alloy formed of at least two of Au, Ag, Cu, Ni, Co, Pt; the polyelectrolyte layer is at least polydiallyldimethylammonium chloride, polyacrylic acid A type of sodium, polydimethyldiallyl ammonium chloride, and an acrylic acid-
  • another technical solution adopted by the present invention is to provide a pixel manufacturing method for improving light utilization efficiency of a micro light emitting diode, the method comprising: preparing a substrate; and manufacturing the substrate on the substrate a black photoresist layer of the cavity and the isolation region; a surface of the black photoresist layer except the isolation region is coated with a polyelectrolyte solution to be air-dried and forms a polyelectrolyte layer; and a metal nanoparticle solution is coated on the surface of the polyelectrolyte layer Air drying and forming a layer of metal particles; transferring the micro-light emitting diodes in position to the black photoresist layer.
  • the pixel structure includes: a substrate; a black photoresist layer deposited on the substrate, the black photoresist layer including a accommodating cavity and an isolation region, wherein the isolation region is disposed in the accommodating cavity; a polyelectrolyte layer, the polyelectrolyte layer is coated on the black photoresist layer except the isolation region; metal nanoparticles a layer, the metal nanoparticle layer covers the polyelectrolyte layer; and a micro light emitting diode, the micro light emitting diode is disposed on the isolation region.
  • the present invention can improve the light utilization efficiency of the micro light emitting diode by forming a pixel structure having a reflective layer.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for fabricating a pixel structure according to the present invention
  • FIG. 2 is a schematic structural view of an embodiment of a pixel structure of the present invention.
  • FIG. 1 is a schematic diagram of an embodiment of a method for fabricating a pixel structure according to the present invention. The method includes the following steps:
  • the substrate may be a transparent material, and may be glass or transparent plastic.
  • the formation of the black photoresist layer having the accommodating cavity and the isolation region may be formed in one step by photolithography.
  • the black photoresist layer is an organic compound, and its solubility in the developer changes after exposure to ultraviolet light.
  • the photoresist is coated on the surface of the substrate in a liquid state, and baked and baked into a solid state. The function is to transfer the pattern on the mask to the oxide layer on the surface of the substrate to protect the underlying material in a subsequent process. Etch or ion implantation, etc.).
  • Photolithography refers to a process of removing a specific portion of a photoresist layer on a surface of a substrate through a series of production steps, after which a photoresist layer having a micro-pattern structure is left on the surface of the substrate. Through the photolithography process, what remains on the surface of the substrate is the feature pattern portion. And the three basic elements of photolithography are control of illumination (mainly ultraviolet light), masks, and photoresist (resistance).
  • the black photoresist layer having the accommodating cavity and the isolation region can be formed in one step by photolithography.
  • the black photoresist layer can also be formed by photolithography in two steps, that is, a black photoresist layer having a accommodating cavity structure is formed first, and an isolation region structure is further formed in the accommodating cavity.
  • the isolation region may be configured as a protrusion, a recess or a trench, and the subsequent polyelectrolyte solution and the metal nanoparticle solution are not coated in the isolation portion for the purpose of isolating the pins at both ends of the micro LED. So that the micro light-emitting diodes will not be short-circuited.
  • the isolation region is provided in a raised structure to facilitate placement of the micro light emitting diode.
  • the coating of the polyelectrolyte layer and the subsequent film layer structure utilizes a layer-by-layer assembly technique (Layer-by-Layer, LBL).
  • the layer-by-layer assembly technique utilizes a layer-by-layer alternate deposition method to form a complete structure and stable performance by spontaneously associating layers with layers by weak interactions between molecules (such as electrostatic attraction, hydrogen bonding, coordination bonds, etc.).
  • the electrostatic layer assembly technique is mainly employed, that is, the electrostatic interaction between ions is used as the driving force for film formation.
  • the polyelectrolyte layer is formed by coating a polyelectrolyte solution on the black photoresist layer having the accommodating cavity and the isolation region structure uniformly coated by the above photolithography process.
  • the polyelectrolyte solution may be one of polydiallyldimethylammonium chloride, sodium polyacrylate, polydimethyldiallylammonium chloride, and an acrylic-vinylpyridine copolymer.
  • the polyelectrolyte solution is selected from polydiallyldimethylammonium chloride (Poly). Dimethyl DiallylAmmonium A chloride, PDDA) solution having a concentration of 2 mg/mL and avoiding the isolation structure of the black photoresist layer during coating. After the air knife is blown dry, a polydiallyldimethylammonium chloride film layer, that is, a polyelectrolyte film is formed.
  • a metal nanoparticle solution is further coated on the polyelectrolyte layer.
  • the metal nanoparticle solution may include at least one of Au, Ag, Cu, Ni, Co, Pt and/or an alloy formed of at least two of Au, Ag, Cu, Ni, Co, and Pt.
  • the selected metal nanoparticle solution should have a high extinction coefficient, and the so-called extinction coefficient is the absorption value of the measured solution for light.
  • the metal nanoparticle solution is coated on the polyelectrolyte layer by using an Ag nanoparticle solution and air-dried to form an Ag nanoparticle layer. That is, the Ag nanoparticle layer is used as the reflective layer.
  • the amplitude of the light entering the Ag nanoparticle layer is rapidly attenuated, so that the light energy entering the Ag nanoparticle layer is correspondingly reduced. And the reflected light can increase.
  • the larger the extinction coefficient of the selected metal particle solution the faster the attenuation of the light amplitude, and the less the light energy entering the metal interior, the higher the reflectivity.
  • the polyelectrolyte solution and the metal nanoparticle solution are electrically opposite, that is, in step S130, the polyelectrolyte solution is selected from cationic polydiallyldimethylammonium chloride, in step S140.
  • the metal nanoparticle solution is selected from a negatively charged Ag nanoparticle solution.
  • the polyelectrolyte solution and the metal nanoparticle solution are selected so long as the electrical properties of the two are opposite.
  • the layer-by-layer assembly technique alternate deposition technique can control the structure and thickness of the assembled film layer.
  • the above steps S130 and S140 may be repeated, that is, a layer of polyelectrolyte solution is further coated on the metal nanoparticle layer to form a polyelectrolyte layer, and then A metal nanoparticle solution is coated on the polyelectrolyte layer to form a metal nanoparticle layer, and the above steps are repeated to obtain a desired film thickness.
  • the micro light emitting diode (Micro) LED) is transferred in the black photoresist layer. Specifically, the micro light emitting diode is para-directed to the isolation structure of the black photoresist layer.
  • the micro-light-emitting diode refers to a micro-light-emitting diode unit with a size of 10 to 50 um grown by molecular beam epitaxy on a sapphire-based substrate by using a mature light-emitting diode preparation process, in order to form a different pattern.
  • the color micro-light-emitting diodes constitute the display area, which needs to be transferred to the glass substrate by a high-precision transfer technique.
  • the size of the sapphire substrate on which the micro-light-emitting diode is fabricated is basically the size of the silicon wafer, and the display is a glass substrate having a much larger size, it is necessary to carry out multiple transports, wherein the transfer of the micro-light-emitting diode is required.
  • a special transfer tool, the transfer tool is used to transfer the micro light-emitting diode from the sapphire substrate to the isolation region of the black photoresist layer.
  • the process can be simply described as: firstly, the transfer tool is in contact with the micro light-emitting diode, The transfer tool applies a voltage to generate a clamping pressure to the micro light emitting diode, picks up the micro light emitting diode with a transfer tool, contacts the isolation structure of the black photoresist layer with the micro light emitting diode, and finally releases the micro light emitting diode to the isolation structure. .
  • the light emitted by the micro-light-emitting diode in the peripheral direction can be re-refracted and reflected by the optical characteristics of the metal nano-particle layer. Converging to the light-emitting direction, reducing light loss and improving light utilization.
  • the light utilization efficiency of the micro light-emitting diode can be improved by using the layer assembly technique to form the pixel structure having the reflective layer.
  • FIG. 2 is a schematic structural diagram of an embodiment of a pixel structure according to the present invention.
  • the pixel 10 includes a substrate 11, a black photoresist layer 12, a polyelectrolyte layer 13, a metal nanoparticle layer 14, and a micro light emitting diode 15.
  • the substrate 11 may be a transparent material, and may be glass or transparent plastic.
  • the black photoresist layer 12 is deposited on the substrate 11.
  • the black photoresist layer 12 includes an accommodating cavity 121 and an isolation region 122, and the isolation region 122 is disposed in the accommodating cavity 121.
  • the black photoresist 12 is an organic compound which changes in solubility in a developer after exposure to ultraviolet light.
  • the photoresist is coated on the surface of the substrate in a liquid state, and baked and baked into a solid state, and the function is to transfer the pattern on the mask to the oxide layer on the surface of the substrate 11 to protect the underlying material in a subsequent process ( Etching or ion implantation, etc.
  • the black photoresist layer 12 can also be formed by photolithography in one step, or can be formed by photolithography in two steps, that is, the black photoresist layer 12 having the structure of the accommodating cavity 121 is formed first, and then An isolation region 122 structure is further formed in the accommodating cavity 121.
  • the isolation region 122 may be configured as a protrusion, a recess or a trench, and the subsequent polyelectrolyte layer and the metal nanoparticle layer are not coated on the isolation region 122, so as to isolate the micro LED 15
  • the pins of the terminals are such that the micro-light-emitting diodes 15 are not short-circuited.
  • the isolation region 122 is disposed in a convex structure to facilitate placement of the micro light emitting diode 15.
  • the polyelectrolyte layer 13 is applied to the black photoresist layer 12 except for the isolation region 122.
  • the polyelectrolyte layer 13 may be one of polydiallyldimethylammonium chloride, sodium polyacrylate, polydimethyldiallylammonium chloride, and acrylic-vinylpyridine copolymer.
  • the polyelectrolyte layer 13 is made of polydiallyldimethylammonium chloride.
  • the metal nanoparticle layer 14 covers the polyelectrolyte layer 13, and the metal nanoparticle includes at least one of Au, Ag, Cu, Ni, Co, Pt and/or from Au, Ag, Cu, Ni, Co, Pt At least two of the alloys formed, and the selected metal nanoparticle layer should have a higher extinction coefficient.
  • the Ag nanoparticle layer is selected as the reflective layer. When the light beam is incident on the surface of the Ag nanoparticle layer by air, the amplitude of the light entering the Ag nanoparticle layer is rapidly attenuated, so that the light entering the Ag nanoparticle layer is made. It can be reduced accordingly, and the reflected light can be increased.
  • the larger the extinction coefficient of the selected metal particle layer the faster the attenuation of the light amplitude, and the less the light energy entering the metal interior, the higher the reflectivity.
  • the polyelectrolyte layer 13 and the metal nanoparticle layer 14 are electrically opposite, that is, the polydiallyldimethylammonium chloride film layer is positively charged, and the Ag nanoparticle layer is negatively charged.
  • the electrodes are alternately deposited by electrostatic action to achieve a metal nanoparticle film layer of a desired thickness.
  • the polyelectrolyte layer and the metal nanoparticle layer are selected so long as the electrical properties of the two are opposite.
  • the micro light emitting diode 15 is disposed on the isolation region 122.
  • the micro-light-emitting diode 15 refers to a micro-light-emitting diode unit having a size of 10 to 50 um grown by molecular beam epitaxy on a sapphire-based substrate by a mature light-emitting diode preparation process. And it is disposed on the structure of the isolation region 122 of the black photoresist layer 12 by the alignment transfer, and the specific setting method is referred to the above description, and details are not described herein again.
  • the light emitted by the micro light-emitting diode in the peripheral direction can be re-converged into the light-emitting direction through refraction and reflection, thereby reducing light loss and improving light utilization efficiency.
  • the present invention provides a pixel structure and a manufacturing method capable of improving the light utilization efficiency of the micro light emitting diode by using a layer assembly technique to form a pixel structure having a reflective layer.

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Abstract

一种像素结构及制造方法，包括：准备一基板（11）；在基板上制造具有容置腔（121）及隔离区（122）的黑色光阻层（12）；在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层（13）；在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层（14）；将微发光二极管（15）对位转移至黑色光阻层中。通过上述方式，能够提高微发光二极管的光利用率。

Description

一种像素结构及制造方法
【技术领域】
本发明涉及显示技术领域，特别是涉及一种像素结构及制造方法。
【背景技术】
随着显示技术的高速发展，关于微发光二极管（Micro LED）的显示应用也越来越受到业界关注。
Micro LED作为电流驱动的自发光单元，每个独立的发光单元都向空间中的各个方向均匀发光，因此在这一过程中损失多数的光能量。
【发明内容】
本发明提供一种像素结构及制造方法，能够提高微发光二极管光利用率。
为解决上述技术问题，本发明采用的一种技术方案是：提供一种像素结构，所述像素结构包括：基板；黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；微发光二极管，所述微发光二极管设置于所述隔离区上；其中，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金；所述聚电解质层至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
为解决上述技术问题，本发明采用的另一种技术方案是：提供一种提高微发光二极管光利用率的像素制造方法，所述方法包括：准备一基板；在所述基板上制造具有容置腔及隔离区的黑色光阻层；在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将所述微发光二极管对位转移至所述黑色光阻层中。
为解决上述技术问题，本发明采用的又一种技术方案是：提供一种像素结构，所述像素结构包括：基板；黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；微发光二极管，所述微发光二极管设置于所述隔离区上。
本发明的有益效果是：区别于现有技术的情况，本发明通过形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
【附图说明】
图1为本发明像素结构制作方法一实施例的流程示意图；
图2为本发明像素结构一实施方式的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明像素结构制作方法一实施例，该方法包括如下步骤：
S110，准备一基板。
其中，该基板可以为透明材质，具体可以是玻璃或者透明塑料等。
S120，在基板上制造具有容置腔及隔离区的黑色光阻层。
在步骤S120中，该具有容置腔及隔离区的黑色光阻层的形成可以采用光刻法一步成型。其中，黑色光阻层是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板表面的氧化层中，以便在后续工序中，保护下面的材料（刻蚀或离子注入等）。
光刻法指在通过一系列生产步骤，将基板表面的光阻层的特定部分除去的工艺，在此之后基板表面会留下带有微图形结构的光阻层。通过光刻工艺过程，最终在基板表面上保留的是特征图形部分。且光刻法的三基本要素为控制光照（主要为紫外光）、掩模板以及光刻胶（光阻）。
在本实施例中，该具有容置腔及隔离区的黑色光阻层可以通过光刻法一步成型。在其它实施例中，该黑色光阻层也可以通过光刻法两步成型，即先形成具有容置腔结构的黑色光阻层，再在容置腔中进一步形成隔离区结构。其中，该隔离区可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质溶液和金属纳米粒子溶液都不会涂布在该隔离区部分，目的是隔离微发光二极管两端的引脚，以使得微发光二极管不会被短路。在本实施例中，该隔离区设置成凸起结构，以方便微发光二极管的放置。
S130，在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层。
在步骤S130中，聚电解质层以及后续的膜层结构的涂布利用层层组装技术（Layer-by-Layer, LBL）。层层组装技术是利用逐层交替沉积的方法，借助各层分子间的弱相互作用（如静电引力、氢键、配位键等），使层与层自发地缔合形成完整结构、性能稳定、具有某种特定功能的分子聚集体或超分子结构的过程。本实施例中，主要采用静电层层组装技术即利用离子间的静电作用作为成膜的驱动力。在由上述光刻工艺得到均匀涂布的具有容置腔及隔离区结构的黑色光阻层上涂布聚电解质溶液风干后形成聚电解质层。其中，该聚电解质溶液可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种。在具体的实施例中，聚电解质溶液选用聚二烯丙基二甲基氯化铵（Poly Dimethyl DiallylAmmonium chloride，PDDA）溶液，其浓度为2mg/mL，且在涂布的过程中避开黑色光阻层的隔离区结构。风刀吹干后，形成聚二烯丙基二甲基氯化铵膜层，即聚电解质膜。
S140，在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层。
步骤S140中，在聚电解质层上进一步涂布金属纳米粒子溶液。其中，该金属纳米粒子溶液可以包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。选用的金属纳米粒子溶液应具有较高的消光系数，所谓消光系数是被测溶液对光的吸收大小值。在本实施例中，金属纳米粒子溶液选用Ag纳米粒子溶液涂布于聚电解质层上风干并形成Ag纳米粒子层。也即是以Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子溶液的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。
此外，步骤S130和步骤S140中，聚电解质溶液和金属纳米粒子溶液的电性相反，即在步骤S130中，聚电解质溶液选用的是阳离子聚二烯丙基二甲基氯化铵，步骤S140中，金属纳米粒子溶液选用带负电的Ag纳米粒子溶液。在其它实施例中，聚电解质溶液和金属纳米粒子溶液的选取只要满足二者的电性相反即可。且利用层层组装技术交替沉积技术可以控制组装膜层的结构和厚度。在具体实施例中，若还需要增加金属纳米粒子层的厚度，则重复上述步骤S130和步骤S140即可，即在金属纳米粒子层上再涂布一层聚电解质溶液风干形成聚电解质层，再在该聚电解质层上涂布金属纳米粒子溶液风干形成金属纳米粒子层，如此反复上述步骤即可得到需要的膜层厚度。
S150，将微发光二极管对位转移至黑色光阻层中。
通过层层组装技术交替沉积技术形成所需要的金属纳米粒子层厚度后，将微发光二极管（Micro LED）对位转移至黑色光阻层中。具体地，将微发光二极管对位转移至黑色光阻层的隔离区结构上。
其中，微发光二极管是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10~50um的微发光二极管单元，若要形成图案化的不同颜色的微发光二极管构成显示区域，则需要通过高精度的转移技术将其转移到玻璃基板上。由于制作微发光二极管的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运，其中对该微发光二极管的转移需用到特殊的传送工具，该传送工具的作用是将微发光二极管从蓝宝石基板上对位转移至上述黑色光阻层的隔离区上，过程可以简单描述为：首先将传送工具与微发光二极管接触，向传送工具施加电压以产生对微发光二极管的夹持压强，用传送工具拾起微发光二极管，使黑色光阻层的隔离区结构与微发光二极管接触，最后将微发光二极管释放到隔离区结构上。
进一步地，将该微发光二极管对位转移至黑色光阻层的隔离区结构上后，由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。
上述实施方式，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
请参阅图2，图2为本发明像素结构一实施方式的结构示意图。如图2，该像素10包括：基板11、黑色光阻层12、聚电解质层13、金属纳米粒子层14以及微发光二极管15。
其中，基板11可以为透明材质，具体可以是玻璃或者透明塑料等。
黑色光阻层12，沉积于基板11上，该黑色光阻层12包括容置腔121以及隔离区122，且隔离区122设置于容置腔121内。具体地，该黑色光阻12是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板11表面的氧化层中，以便在后续工序中，保护下面的材料（刻蚀或离子注入等），该黑色光阻层12也可以通过光刻法一步成型，也可以通过光刻法两步成型，即先形成具有容置腔121结构的黑色光阻层12，再在容置腔121中进一步形成隔离区122结构。其中，该隔离区122可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质层和金属纳米粒子层都不会涂布在该隔离区122部分，目的是隔离微发光二极管15两端的引脚，以使得微发光二极管15不会被短路。在本实施例中，该隔离区122设置成凸起结构，以方便微发光二极管15的放置。
聚电解质层13，涂覆于除隔离区122外的黑色光阻层12上。其中，该聚电解质层13可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种，在具体实施方式中，该聚电解质层13选用聚二烯丙基二甲基氯化铵。
金属纳米粒子层14，覆盖于聚电解质层13上，该金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金，且选用的金属纳米粒子层应具有较高的消光系数。在本实施例中，选用Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子层的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。
在具体实施例中，上述的聚电解质层13和金属纳米粒子层14电性相反，即上述的聚二烯丙基二甲基氯化铵薄膜层带正电，Ag纳米粒子层带负电，二者通过静电作用交替沉积，以达到需要厚度的金属纳米粒子膜层。在其它实施例中，聚电解质层和金属纳米粒子层的选取只要满足二者的电性相反即可。
微发光二极管15，设置于隔离区122上。其中，该微发光二极管15是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10~50um的微发光二极管单元。且其通过对位转移将其设置在黑色光阻层12的隔离区122结构上，且具体设置方法参照上文描述，此处不再赘述。由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。
综上所述，本领域技术人员容易理解，本发明提供一种像素结构及制造方法，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
以上仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (12)

  1. 一种像素结构，其中，所述像素结构包括：
    基板；
    黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；
    聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；
    金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；
    微发光二极管，所述微发光二极管设置于所述隔离区上；
    其中，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金；
    所述聚电解质层至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
  2. 根据权利要求1所述的像素结构，其中，所述聚电解质层和所述金属纳米粒子层电性相反。
  3. 一种提高微发光二极管光利用率的像素制造方法，其中，所述方法包括：
    准备一基板；
    在所述基板上制造具有容置腔及隔离区的黑色光阻层；
    在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；
    在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；
    将所述微发光二极管对位转移至所述黑色光阻层中。
  4. 根据权利要求3所述的制造方法，其中，所述黑色光阻层使用光刻法一步成型。
  5. 根据权利要求3所述的制造方法，其中，所述黑色光阻层使用光刻法两步成型。
  6. 根据权利要求3所述的制造方法，其中，所述聚电解质溶液和所述金属纳米粒子溶液的电性相反。
  7. 根据权利要求3所述的制造方法，其中，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。
  8. 根据权利要求6所述的制造方法，其中，所述聚电解质至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
  9. 一种像素结构，其中，所述像素结构包括：
    基板；
    黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；
    聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；
    金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；
    微发光二极管，所述微发光二极管设置于所述隔离区上。
  10. 根据权利要求9所述的像素结构，其中，所述聚电解质层和所述金属纳米粒子层电性相反。
  11. 根据权利要求9所述的像素结构，其中，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。
  12. 根据权利要求9所述的像素结构，其中，所述聚电解质层至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
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