WO2018194792A1 - Composition de polissage à auto-arrêt et procédé de planarisation d'oxyde en masse - Google Patents

Composition de polissage à auto-arrêt et procédé de planarisation d'oxyde en masse Download PDF

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Publication number
WO2018194792A1
WO2018194792A1 PCT/US2018/024067 US2018024067W WO2018194792A1 WO 2018194792 A1 WO2018194792 A1 WO 2018194792A1 US 2018024067 W US2018024067 W US 2018024067W WO 2018194792 A1 WO2018194792 A1 WO 2018194792A1
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WIPO (PCT)
Prior art keywords
polishing composition
substrate
polishing
acid
self
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/US2018/024067
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English (en)
Inventor
Alexander W. Hains
Juyeon Chang
Tina C. Li
Viet LAM
Ji Cui
Sarah Brosnan
Chul Woo Nam
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CMC Materials LLC
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Cabot Microelectronics Corp
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Priority to JP2019556638A priority Critical patent/JP7132942B2/ja
Priority to CN201880025600.XA priority patent/CN110520493B/zh
Priority to EP18788475.4A priority patent/EP3612608A4/fr
Priority to KR1020197033492A priority patent/KR102671229B1/ko
Publication of WO2018194792A1 publication Critical patent/WO2018194792A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

Definitions

  • self-stopping slurries result from the reduced blanket removal rate, which produces a wide endpoint window.
  • self-stopping behavior allows for polishing of substrates having reduced dielectric film thickness, allowing for a reduced amount of material to be deposited over a structured lower layer.
  • motor torque endpoint detection can be used for more effective monitoring of final topography.
  • Substrates can be polished with lower trench loss by avoiding overpolishing or unnecessary removal of dielectric after planarization.
  • Self-stopping CMP compositions currently have been developed based on ceria/anionic polyelectrolyte systems. For example, U.S.
  • Patent Application Publication 2008/0121839 discloses a polishing composition comprising inorganic abrasives, polyacrylic acid/maleic acid copolymer, and gemini surfactant.
  • Korean Patent No. 10-1524624 discloses a polishing composition comprising ceria, a carboxylic acid, and mixed amine compounds (English-language abstract).
  • International Patent Application Publication No. WO 2011/0012839 discloses a polishing composition comprising inorganic abrasives, polyacrylic acid/maleic acid copolymer, and gemini surfactant.
  • Korean Patent No. 10-1524624 discloses a polishing composition comprising ceria, a carboxylic acid, and mixed amine compounds (English-language abstract).
  • 2006/115393 discloses a polishing composition comprising ceria, a hydroxycarboxylic acid, and an amino alcohol.
  • a polishing composition comprising ceria, a hydroxycarboxylic acid, and an amino alcohol.
  • current self- stopping CMP compositions due to the use of anionic polymer, are being challenged by the limited step height reduction rate brought about by electrostatic repulsion between the abrasive and the silicon oxide surface.
  • the invention also provides a chemical-mechanical polishing composition
  • a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria, (b) a self-stopping agent selected from kojic acid (5-Hydroxy-2-(hydroxymethyl)-4H-pyran-4-one), crotonic acid ((E)-2-butenoic acid), tiglic acid ((2E)-2-Methylbut-2-enoic acid), valeric acid (pentanoic acid), 2-pentenoic acid, maltol (3-Hydroxy-2-methyl-4H-pyran-4-one), benzoic acid, 3,4-dihydroxybenzoic acid, 3,5- dihydroxybenzoic acid, caffeic acid, ethyl maltol, potassium sorbate, sorbic acid, and combinations thereof, and (c) an aqueous carrier, wherein the polishing composition has a pH of about 3 to about 9.
  • a self-stopping agent selected from kojic
  • Both ceria abrasives and zirconia abrasives are well known in the CMP art and are commercially available.
  • suitable ceria abrasives include wet-process ceria, calcined ceria, and metal-doped ceria, among others.
  • suitable zirconia abrasives include metal-doped zirconia and non-metal-doped zirconia, among others.
  • metal doped zirconia are cerium-, calcium-, magnesium-, or yttrium-doped zirconia with dopant element weight percentage preferentially in a range from 0.1 -25%.
  • Ceria abrasives suitable for use in the inventive polishing compositions, and processes for their preparation are described in U. S. Patent Application No. 14/639,564, filed March, 5, 2015, entitled “Polishing Composition Containing Ceria Abrasive,” now U.S. Patent No. 9,505,952, and U.S. Patent Application No. 15/207,973, filed July 12, 2016, entitled “Methods and Compositions for Processing Dielectric Substrate,” published as U.S. Patent Application Publication No. 2017/0014969, the disclosures of which are incorporated by reference herein.
  • the solution can be heated to a temperature of about 500 °C or less, e.g., about 450 °C or less, about 400 °C or less, about 375 °C or less, about 350 °C or less, about 300 °C or less, about 250 °C or less, about 225 °C, or about 200 °C or less.
  • the solution can be heated to a temperature within a range bounded by any two of the aforementioned endpoints.
  • the ceria particles can be sintered at a temperature of about 1000 °C or less, e.g., about 900 °C or less, about 750 °C or less, about 650 °C or less, about 550 °C or less, about 500 °C or less, about 450 °C or less, or about 400 °C or less.
  • the ceria particles can be sintered at a temperature bounded by any two of the aforementioned endpoints.
  • Any suitable acid can be used to lower the pH of the mixture.
  • Suitable acids include, for example hydrochloric acid and nitric acid.
  • Organic acids which are highly water-soluble and have hydrophilic functional groups also are suitable.
  • Suitable organic acids include, for example, acetic acid. Acids with multivalent anions, such as H3PO4 and H2SO4, generally are not preferred.
  • the pH of the mixture can be lowered to any suitable pH. For example, the pH of the mixture can be lowered to about 2 to about 5, e.g., about 2.5, about 3, about 3.5, about 4, or about 4.5. Typically, the pH of the mixture is not lowered to less than about 2.
  • the abrasive particles can have a median particle size of about 40 nm or more, e.g., about 45 nm or more, about 50 nm or more, about 55 nm or more, about 60 nm or more, about 65 nm or more, about 70 nm or more, about 75 nm or more, or about 80 nm or more.
  • the inventive polishing composition comprises a self-stopping agent.
  • the self-stopping agent is a compound that facilitates a relatively high pattern removal rate and a relatively low blanket removal rate, and upon planarizing during polishing, facilitates transitioning from a high pattern removal rate to a relatively low blanket removal rate.
  • stopping regime typically is distinct such that for a given DF either a "high” removal rate, or a “stopping” removal rate is observed. Accordingly, it is believed that the self-stopping agent desirably enables a "high” removal rate (i.e., a pattern removal rate) even when the applied DF is in the "stopping" regime as determined with blanket wafers. [0044] Moreover, it also noted that the mechanism is not solely dependent on DF since the trench oxide removal rate on pattern dielectric material is higher than the blanket removal rate despite having a lower effective DF in the trenches than on the blanket wafers.
  • the self-stopping agent is of the formula Q-B, wherein Q is a substituted or unsubstituted hydrophobic group, or a group imparting a steric hindrance, and B is a binding group, wherein the binding group has the structure: -C(0)-X-OH or -C(0)-OH. Wherein X is a C1-C2 alkyl group.
  • Q can be any suitable hydrophobic group, or any suitable group imparting steric hindrance.
  • Suitable hydrophobic groups include saturated and unsaturated hydrophobic groups.
  • the hydrophobic group can be linear or branched, and can include linear or branched alkyl groups, cycloalkyl groups, and ring structures, including aromatic, heterocyclic, and fused ring systems.
  • a substituted group refers to a group in which one or more carbon-bonded hydrogens is replaced by a non-hydrogen atom.
  • substituents include, for example, hydroxyl groups, keto groups, esters, amides, halogens (e.g., fluorine, chlorine, bromine, and iodine), amino groups (primary, secondary, tertiary, and/or quaternary), and combinations thereof.
  • Q is unsubstituted.
  • Q is a group that imparts a steric hindrance.
  • Q may not be particularly hydrophobic, but may be a bulky constituent that prevents chemical reactions or interactions that would otherwise occur in related molecules with smaller Q groups.
  • examples of self- stopping agents having such a Q group would be maltol, ethyl maltol and kojic acid.
  • salts of the self-stopping agents of the formulation Q-B also are suitable for use in the inventive polishing compositions.
  • the polishing composition can comprise about 0.0001 wt.% or more of the self-stopping agent, for example, about 0.0005 wt.% or more, about 0.001 wt.% or more, about 0.005 wt.% or more, about 0.01 wt.% or more, or about 0.05 wt.% or more.
  • the polishing can comprise about 0.0001 wt.% or more of the self-stopping agent, for example, about 0.0005 wt.% or more, about 0.001 wt.% or more, about 0.005 wt.% or more, about 0.01 wt.% or more, or about 0.05 wt.% or more.
  • Suitable cationic polymers include cationic polymers for personal care such as Luviquat®Supreme, Luviquat® Hold, Luviquat® UltraCare, Luviquat® FC 370, Luviquat® FC 550, Luviquat® FC 552, Luviquat® Excellence, and combinations thereof. Any combination of the cationic polymers mentioned here may be used.
  • the cationic polymer is a quaternary amine, and the cationic polymer is poly(vinylimidazolium).
  • the cationic polymer i.e., the quaternary amine, the cationic polyvinyl alcohol, the cationic cellulose, or a combination thereof, in total
  • the polishing composition can be present at any suitable concentration.
  • the cationic polymer is present in the polishing composition at a concentration of about 1 ppm to about 500 ppm, e.g., about 1 ppm to about 475 ppm, about 1 ppm to about 450 ppm, about 1 ppm to about 425 ppm, about 1 ppm to about 400 ppm, about 1 ppm to about 375 ppm, about 1 ppm to about 350 ppm, about 1 ppm to about 325 ppm, about 1 ppm to about 300 ppm, about 1 ppm to about 275 ppm, about 1 ppm to about 250 ppm, about 1 ppm to about 225 ppm, about 1 ppm to about 200 ppm, about 1 ppm to about 175 ppm, about 1 ppm to about 150 ppm, about 1 ppm to about 125 ppm, about 1 ppm to about 100 ppm, about 1 ppm to about 75 ppm, about 1 ppm
  • the polishing composition can optionally comprise an additive selected from an anionic copolymer of a carboxylic acid monomer, a sulfonated monomer, or a phosphonated monomer, and an acrylate, a polyvinylpyrrolidone, or a polyvinylalcohol (e.g., a copolymer of 2-hydroxyethylmethacrylic acid and methacrylic acid); a nonionic polymer, wherein the nonionic polymer is polyvinylpyrrolidone or polyethylene glycol; a silane, wherein the silane is an amino silane, an ureido silane, or a glycidyl silane; an N-oxide of a functionalized pyridine (e.g., picolinic acid N-oxide); a starch; a cyclodextrin (e.g., alpha-cyclodextrin or beta-cyclodextrin), and combinations thereof.
  • an additive selected
  • the additive is present in the polishing composition at a concentration of about 1 ppm to about 300 ppm, e.g., about 1 ppm to about 275 ppm, about 1 ppm to about 250 ppm, about 1 ppm to about 100 ppm, about 1 ppm to about 50 ppm, about 10 ppm to about 250 ppm, about 10 ppm to about 100 ppm, or about 35 ppm to about 250 ppm.
  • the polishing composition can comprise a cationic polymer without one or more of the additives described above, i.e., without one or more of an anionic copolymer of a carboxylic acid monomer, a sulfonated monomer, or a phosphonated monomer, and an acrylate, a polyvinylpyrrolidone, or a polyvinylalcohol; a nonionic polymer; a silane; an N-oxide of a functionalized pyridine; a starch; and a cyclodextrin.
  • a cationic polymer without one or more of the additives described above, i.e., without one or more of an anionic copolymer of a carboxylic acid monomer, a sulfonated monomer, or a phosphonated monomer, and an acrylate, a polyvinylpyrrolidone, or a polyvinylalcohol; a nonionic polymer; a si
  • the polishing composition comprises an aqueous carrier.
  • the aqueous carrier comprises water (e.g., deionized water) and may contain one or more water-miscible organic solvents.
  • organic solvents include alcohols such as propenyl alcohol, isopropyl alcohol, ethanol, 1-propanol, methanol, 1-hexanol, and the like; aldehydes such as acetyl aldehyde and the like; ketones such as acetone, diacetone alcohol, methyl ethyl ketone, and the like; esters such as ethyl formate, propyl formate, ethyl acetate, methyl acetate, methyl lactate, butyl lactate, ethyl lactate, and the like; ethers including sulfoxides such as dimethyl sulfoxide (DMSO), tetrahydrofuran, dioxane, diglyme, and the like; amide
  • DMSO
  • the polishing composition can comprise a pH-adjusting agent and a pH buffering agent.
  • the pH-adjusting agent can be any suitable pH-adjusting agent.
  • the pH- adjusting agent can be an alkyl amine, an alcohol amine, quaternary amine hydroxide, ammonia, or a combination thereof.
  • the pH-adjusting agent can be
  • the pH- adjusting agent is triethanolamine.
  • the polishing composition may contain any suitable amount of the buffering agent, when present.
  • the buffering agent can be present in the polishing composition at a concentration of about 0.0001 wt.% or more, e.g., about 0.0005 wt.% or more, about 0.001 wt.% or more, about 0.005 wt.% or more, about 0.01 wt.% or more, or about 0.1 wt.% or more.
  • the buffering agent can be present in the polishing composition at a concentration of about 2 wt.% or less, e.g., about 1.8 wt.% or less, about 1.6 wt.% or less, about 1.4 wt.% or less, about 1.2 wt.% or less, or about 1 wt.% or less.
  • the buffering agent can be present in the polishing composition at a concentration bounded by any two of aforementioned endpoints.
  • the polishing composition optionally further comprises one or more other additional components.
  • additional components include rate enhancers, conditioners, scale inhibitors, dispersants, etc.
  • a rate enhancer desirably is an organic carboxylic acid that activates the polishing particle or substrate by forming hypercoordinate compounds (e.g., pentacoordinate or hexacoordinate silicon compounds).
  • Suitable rate enhancers include, for example, picolinic acid and 4-hydroxybenzoic acid.
  • the polishing composition can comprise a surfactant and/or rheological control agent, including viscosity enhancing agents and coagulants (e.g., polymeric rheological control agents, such as, for example, urethane polymers), a dispersant, a biocide (e.g., KATHONTM LX), and the like.
  • Suitable surfactants include, for example, cationic surfactants, anionic surfactants, anionic polyelectrolytes, nonionic surfactants, amphoteric surfactants, fluorinated surfactants, mixtures thereof, and the like.
  • additional components may include Brij S20 (polyethylene glycol octadecyl ether) and polyethylene glycol (e.g. PEG8000).
  • the self-stopping agent can be added to the aqueous carrier (e.g., water) at the desired concentration(s).
  • the pH can then be adjusted (as desired) and the abrasive can be added to the mixture at the desired concentration to form the polishing composition.
  • the polishing composition can be prepared prior to use, with one or more components added to the polishing composition just before use (e.g., within about 1 minute before use, or within about 1 hour before use, or within about 7 days before use).
  • the polishing composition also can be prepared by mixing the components at the surface of the substrate during the polishing operation.
  • the polishing composition can be prepared well before, or even shortly before, use, the polishing composition also can be produced by mixing the components of the polishing composition at or near the point-of-use.
  • point-of-use refers to the point at which the polishing composition is applied to the substrate surface (e.g., the polishing pad or the substrate surface itself).
  • the components of the polishing composition are separately stored in two or more storage devices.
  • the components can be combined in the flow line and delivered to the point-of-use without the use of a mixing device.
  • one or more of the flow lines can lead into a mixing device to facilitate the combination of two or more of the components.
  • Any suitable mixing device can be used.
  • the mixing device can be a nozzle or jet (e.g., a high-pressure nozzle or jet) through which two or more of the components flow.
  • the mixing device can be a container-type mixing device comprising one or more inlets by which two or more components of the polishing
  • the mixing device can comprise more than one chamber, each chamber having at least one inlet and at least one outlet, wherein two or more components are combined in each chamber. If a container-type mixing device is used, the mixing device preferably comprises a mixing mechanism to further facilitate the combination of the components. Mixing mechanisms are generally known in the art and include stirrers, blenders, agitators, paddled baffles, gas sparger systems, vibrators, etc.
  • the invention also provides a method of chemically-mechanically polishing a substrate using the inventive CMP composition described herein.
  • the invention provides a method of chemically-mechanically polishing a substrate comprising (i) providing a substrate, wherein the substrate comprises a pattern dielectric layer on a surface of the substrate, wherein the pattern dielectric layer comprises a raised area of dielectric material and a trench area of dielectric material, and wherein the initial step height of the pattern dielectric layer is the difference between the height of the raised area of dielectric material and the height of the trench area of dielectric material, (ii) providing a polishing pad, (iii) providing the chemical-mechanical polishing composition described herein, (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the pattern dielectric layer on a surface of the substrate to polish the substrate.
  • the invention provides a method of chemically-mechanically polishing a substrate comprising (i) providing a substrate, wherein the substrate comprises a pattern dielectric layer on a surface of the substrate, wherein the pattern dielectric layer comprises a raised area of dielectric material and a trench area of dielectric material, and wherein the initial step height of the pattern dielectric layer is the difference between the height of the raised area of dielectric material and the height of the trench area of dielectric material, (ii) providing a polishing pad, (iii) providing a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a self-stopping agent of the formula Q-B, wherein Q is a substituted or unsubstituted hydrophobic group, or a group imparting a steric hindrance, B is a binding group, wherein the binding group has the structure,
  • polishing composition has a pH of about 3 to about 9, (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the pattern dielectric layer on a surface of the substrate to polish the substrate.
  • R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted,
  • the substrate can further comprise a metal layer.
  • the metal can comprise, consist essentially of, or consist of any suitable metal, many of which are known in the art, such as, for example, copper, tantalum, tungsten, titanium, platinum, ruthenium, iridium, aluminum, nickel, or combinations thereof.
  • a substrate can be planarized or polished with the polishing composition described herein by any suitable technique.
  • the polishing method of the invention is particularly suited for use in conjunction with a chemical-mechanical polishing (CMP) apparatus.
  • CMP chemical-mechanical polishing
  • the CMP apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad.
  • step height is reduced to less than 1,000 angstroms, e.g., less than 900 angstroms, less than 500 angstroms, less than 300 angstroms, or less than 250 angstroms.
  • the polishing method described herein will result in a trench loss that is substantially less than (e.g., at least 10 percent less than) the trench loss that would occur using the same process conditions and equipment to polish the same type of substrate with a polishing composition that is similar but does not contain a self-stopping agent as described herein (e.g., a polishing composition that does not contain a compound of the formula Q-B).
  • the inventive method of polishing a substrate provides a trench loss of less than about 2,000 angstroms (e.g., less than about 1 ,500 angstroms, less than about 1 ,000 angstroms, less than about 500 angstroms, or less than about 250 angstroms).
  • the inventive polishing method will result in a ratio of blanket removal rate to pattern removal rate that is substantially less than (e.g., at least about 10 percent less than) the ratio of blanket removal rate to pattern removal rate that would occur using the same process conditions and equipment to polish the same type of substrate with a polishing composition that is similar but does not contain a self-stopping agent as described herein (e.g. a polishing composition that does not contain a compound of the formula Q-B).
  • the invention provides a method wherein the pattern dielectric layer includes an initial step height of at least about 1,000 angstroms, wherein the method comprises reducing the initial step height to less than about 900 angstroms during polishing to produce a planarized dielectric, and wherein the removal rate of the planarized dielectric is less than about 1,000 angstroms per minute.
  • the present invention provides a method comprising removing at least about 10,000 angstroms of the raised area of dielectric material from the surface of the pattern dielectric layer.
  • embodiment (2) is presented the polishing composition of embodiment (1), wherein the abrasive is selected from ceria, zirconia, and combinations thereof.
  • embodiment (5) is presented the polishing composition of any one of embodiments (l)-(4), wherein Q is selected from an alkyl group, a cycloalkyl group, an aromatic group, a heterocyclic group, a heteroaromatic group, and combinations thereof.
  • embodiment (6) is presented the polishing composition of embodiment (5), wherein Q is substituted with one or more groups selected from a hydroxyl group, an alkyl group, a halogen, an amine group, or any combination thereof.
  • embodiment (8) is presented the polishing composition of any one of embodiments (l)-(7), wherein the self-stopping agent is present in the polishing composition at a concentration of about 0.5 wt.% or less.
  • the cationic polymer comprises quaternary amine monomers, and wherein the quaternary amine monomers are selected from vinylimidazolium, methacryloyloxyethyltrimethylammonium halide, diallyldimethylammonium halide, and combinations thereof.
  • poly(methacryloyloxyethyltrimethylammonium) chloride poly(diallyldimethylammonium) chloride, polyquaternium-2, and combinations thereof.
  • embodiment (13) is presented the polishing composition of any one of embodiments (1)-(12), wherein the polishing composition has a pH of about 6.5 to about 8.5.
  • embodiment (14) is presented the polishing composition of any one of embodiments (1)-(12), wherein the polishing composition has a pH of about 3 to about 5.
  • embodiment (15) is presented the polishing composition of any one of embodiments (1)-(14), further comprising a rate enhancer and/or a pH buffer.
  • a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria, (b) a self-stopping agent selected from kojic acid, crotonic acid, tiglic acid, valeric acid, 2-pentenoic acid, maltol, benzoic acid, 3,4-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, caffeic acid, ethyl maltol, potassium sorbate, sorbic acid, and combinations thereof, and (c) an aqueous carrier, wherein the polishing composition has a pH of about 3 to about 9.
  • embodiment (19) is presented the polishing composition of embodiment (18), wherein the polishing composition has a pH of about 6.5 to about 8.5.
  • R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted;
  • a cationic compound selected from aluminum salts, 2-(dimethylamino)ethyl methacrylate, diallyldimethylammonium, poly(vinylimidazolium),
  • poly(methacryloyloxyethyltrimethylammonium) halide poly(diallyldimethylammonium) halide
  • polyquaternium-2 Polyquaternium-1 1, Polyquaternium-16, Polyquaternium-46, Polyquaternium-44, Luviquat Supreme, Luviquat Hold, Luviquat UltraCare, Luviquat FC 370, Luviquat FC 550, Luviquat FC 552, Luviquat Excellence, and combinations thereof, and
  • embodiment (21) is presented the polishing composition of embodiment (20), wherein the polishing composition has a pH of about 7 to about 9.
  • a method of chemically-mechanically polishing a substrate comprising (i) providing a substrate, wherein the substrate comprises a pattern dielectric layer on a surface of the substrate, wherein the pattern dielectric layer comprises a raised area of dielectric material and a trench area of dielectric material, and wherein the initial step height of the pattern dielectric layer is the difference between the height of the raised area of dielectric material and the height of the trench area of dielectric material, (ii) providing a polishing pad, (iii) providing the chemical-mechanical polishing composition of any one embodiments (1)-(21), (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the pattern dielectric layer on a surface of the substrate to polish the substrate.
  • embodiment (23) is presented the polishing method of embodiment (22), wherein the pattern dielectric layer includes an initial step height of at least about 1,000 angstroms, wherein the method comprises reducing the initial step height to less than about 900 angstroms during polishing to produce a planarized dielectric, and wherein the removal rate of the planarized dielectric is less than about 1 ,000 angstroms per minute.
  • embodiment (27) is presented the polishing method of any one of embodiments (22)-(26), wherein the pattern dielectric layer comprises dielectric material selected from silicon oxide, tetraethoxysilane, phosphosilicate glass, borophosphosilicate glass, and combinations thereof.
  • PEG8000 refers to polyethylene glycol having a molecular weight of 8,000 g/mol
  • pMADQUAT refers to polyMADQUAT
  • SHA refers to salicylhydroxamic acid
  • BHA refers to benzhydroxamic acid
  • BTA refers to IH-benzotriazole
  • TEA refers to triethanolamine
  • POU refers to point-of- use
  • RR refers to removal rate
  • AA refers to Active Area
  • TA refers to Trench Area
  • BW refers to TEOS blanket wafer
  • SH refers to step-height.
  • Pattern substrates were polished with fourteen polishing compositions (i.e., Polishing Compositions 1 A-IN).
  • Polishing Compositions 1A-1N were prepared by mixing Abrasive Compositions CI and C2 (described below in Table 1) with Additive Formulations F 1-F15 (described below in Table 2) in a 7:3 ratio by volume.
  • Additive Formulations F4-F 15 contained cationic compound (pMADQUAT), self-stopping agent (SHA or BHA), and additive (BTA) as set forth in Table 2.
  • the pH of each of Additive Formulations F3-F15 was adjusted using triethanolamine (TEA).
  • Additive Formulations F l and F2 did not contain a base and had a pH of 4.2.
  • Polishing Composition 2C initially exhibited a lower polishing rate on the pattern material, but the rate drops uniformly over the wafer as the step height decreases, as compared to comparative (Polishing Compositions 2A and 2B).
  • This example further demonstrates the advantage of self-stopping polishing compositions formulated in a pH range of about 7.0 to about 8.5 at point-of-use with a self-stopping agent (e.g., hydroxamic acid) and a cationic compound (e.g., pMADQUAT) with regard to topography variations over the substrate (pattern density dependence) and within wafer polishing rate variations (WIWNU) as compared to a control polishing composition.
  • a self-stopping agent e.g., hydroxamic acid
  • a cationic compound e.g., pMADQUAT
  • Patterned wafers were obtained from Silyb Inc., and comprised 900 ⁇ TEOS features with a 50% pattern density (approximately 10,000 A thick features) initially coated on patterned silicon substrates having a step-height of approximately 5,000 A.
  • TEOS blanket wafers obtained from WRS materials. The test wafers were polished using a MIRRATM polishing tool (Applied Materials, Inc.) for 60 seconds and 90 seconds, for the pattern wafers and blanket wafers, respectively.
  • a NexPlanar® E6088 (Cabot Microelectronics Corporation) polishing pad was used on a 200 mm platen, using 3 psi down force, and 93 rpm and 87 rpm for the platen speed and head speed, respectively. The total slurry flow rate was 150 mL/min. The results are set forth in Table 7. TABLE 7: Effect of Additives and POU pH on Polishing Performance

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une composition de polissage chimico-mécanique comprenant un abrasif, un agent d'auto-arrêt, un support aqueux, et facultativement, un polymère cationique, et concerne un procédé approprié pour polir un substrat.
PCT/US2018/024067 2017-04-17 2018-03-23 Composition de polissage à auto-arrêt et procédé de planarisation d'oxyde en masse Ceased WO2018194792A1 (fr)

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JP2019556638A JP7132942B2 (ja) 2017-04-17 2018-03-23 バルク酸化物の平坦化のための自己停止研磨組成物および方法
CN201880025600.XA CN110520493B (zh) 2017-04-17 2018-03-23 自停止性抛光组合物及用于块状氧化物平坦化的方法
EP18788475.4A EP3612608A4 (fr) 2017-04-17 2018-03-23 Composition de polissage à auto-arrêt et procédé de planarisation d'oxyde en masse
KR1020197033492A KR102671229B1 (ko) 2017-04-17 2018-03-23 벌크 산화물 평탄화를 위한 자기-정지 연마 조성물 및 방법

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JP7220522B2 (ja) 2018-05-24 2023-02-10 株式会社バイコウスキージャパン 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法
JP2019203088A (ja) * 2018-05-24 2019-11-28 株式会社バイコウスキージャパン 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法
JP7611246B2 (ja) 2019-10-22 2025-01-09 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 自動停止研磨組成物及び方法
WO2021081171A1 (fr) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition et procédé de polissage à arrêt automatique
WO2021081148A1 (fr) 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition et procédé cmp diélectrique
CN114616300A (zh) * 2019-10-22 2022-06-10 Cmc材料股份有限公司 用于介电质化学机械抛光的组合物及方法
JP2022552895A (ja) * 2019-10-22 2022-12-20 シーエムシー マテリアルズ，インコーポレイティド 誘電体ｃｍｐのための組成物及び方法
JP2022553334A (ja) * 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 誘電体ｃｍｐのための組成物及び方法
JP2022553335A (ja) * 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 自動停止研磨組成物及び方法
WO2021081153A1 (fr) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition et procédé cmp diélectrique
US12528973B2 (en) 2019-10-22 2026-01-20 Cmc Materials Llc Composition and method for silicon oxide and carbon doped silicon oxide CMP
JP7784996B2 (ja) 2019-10-22 2025-12-12 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘電体ｃｍｐのための組成物及び方法
JP7757279B2 (ja) 2019-10-22 2025-10-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘電体ｃｍｐのための組成物及び方法
WO2021081162A1 (fr) 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition et procédé pour cmp d'oxyde de silicium et d'oxyde de silicium dopé au carbone
US12116502B2 (en) 2020-12-21 2024-10-15 Cmc Materials Llc Self-stopping polishing composition and method for high topological selectivity
EP4379777A4 (fr) * 2021-08-06 2025-01-08 Resonac Corporation Liquide de polissage pour cmp, ensemble liquide de polissage pour cmp, et procédé de polissage
EP4379776A4 (fr) * 2021-08-06 2025-01-08 Resonac Corporation Liquide de polissage pour cmp, ensemble liquide de polissage pour cmp, et procédé de polissage
EP4379778A4 (fr) * 2021-08-06 2025-01-01 Resonac Corporation Liquide de polissage pour cmp, ensemble liquide de polissage pour cmp, et procédé de polissage
EP4473071A4 (fr) * 2022-02-03 2026-02-18 Cmc Mat Llc Compositions de bouillie à base d'oxyde de cérium pour cmp sélective et non sélective d'oxyde de silicium, de nitrure de silicium et de polysilicium
WO2025111136A1 (fr) * 2023-11-21 2025-05-30 Versum Materials Us, Llc Biocides écologiques pour compositions de polissage par planarisation chimico-mécanique (cmp)
CN118146694A (zh) * 2024-03-05 2024-06-07 江苏进华重防腐涂料有限公司 用于建筑物排水用铸铁管以及铸铁配件的环氧管道油漆及其制备方法

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TW201839077A (zh) 2018-11-01
TWI663231B (zh) 2019-06-21
CN113637412A (zh) 2021-11-12
CN110520493A (zh) 2019-11-29
CN110520493B (zh) 2022-11-22
JP7132942B2 (ja) 2022-09-07
JP2020517117A (ja) 2020-06-11
EP3612608A1 (fr) 2020-02-26
KR20190132537A (ko) 2019-11-27
KR102671229B1 (ko) 2024-06-03

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