WO2019209200A2 - Verre à couche à faible émissivité à régulation thermique et solaire efficaces - Google Patents

Verre à couche à faible émissivité à régulation thermique et solaire efficaces Download PDF

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Publication number
WO2019209200A2
WO2019209200A2 PCT/TR2018/050673 TR2018050673W WO2019209200A2 WO 2019209200 A2 WO2019209200 A2 WO 2019209200A2 TR 2018050673 W TR2018050673 W TR 2018050673W WO 2019209200 A2 WO2019209200 A2 WO 2019209200A2
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WIPO (PCT)
Prior art keywords
dielectric layer
layer
glass
thickness
low
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Ceased
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PCT/TR2018/050673
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English (en)
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WO2019209200A3 (fr
Inventor
Seniz TURKUZ
Ocal TUNA
Sinem ERASLAN
Tuncay TURUTOGLU
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Turkiye Sise Ve Cam Fabrikalari AS
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Turkiye Sise Ve Cam Fabrikalari AS
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Application filed by Turkiye Sise Ve Cam Fabrikalari AS filed Critical Turkiye Sise Ve Cam Fabrikalari AS
Publication of WO2019209200A2 publication Critical patent/WO2019209200A2/fr
Publication of WO2019209200A3 publication Critical patent/WO2019209200A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings

Definitions

  • the present invention relates to a low emissivity (low-e) coating having infrared reflective layers therein and used as thermal isolation glass and which transmits daylight.
  • One of the factors which differentiate optic characteristics of glasses is the coating applications which are applied onto the glass surface.
  • One of the coating applications is the magnetic field supported sputtering method in vacuum medium. This is a method frequently used particularly in the production of architecture coatings having low-e characteristic. By means of said method, the transmittance and reflection values of the coated glasses in the visible, near infrared and infrared region of the solar energy spectrum can be obtained at the targeted levels.
  • selectivity value is also an important parameter in coated glasses.
  • selectivity is defined as the ratio of the transmittance value of the visible region to the solar factor.
  • the selectivity values of coatings can be kept at the targeted levels by means of the number of Ag layers included, the type of the seed layer used, and the parametric optimizations of the layers.
  • a dielectric layer (I), a silver layer, a zinc aluminum oxide or titanium oxide ceramic barrier layer and a dielectric layer (II) are arranged on the surface of a glass sheet from bottom to top in sequence, wherein each of the dielectric layer (I) and the dielectric layer (II) is one or the combination of a titanium oxide layer, a zinc oxide layer and a silicon nitride layer.
  • the neutral high-transmittance low- radiation coated glass has the advantages of high visible light transmittance, neutral color, low radiation and the like as a titanium basic layer is taken as a glass film layer and the barrier layer made of zinc aluminum oxide or titanium oxide ceramic materials is adopted to protect the silver layer.
  • the present invention relates to a low-e coated glass, for bringing new advantages to the related technical field.
  • An object of the present invention is to provide a low-e coated glass which provides a strong solar control together with efficient thermal control.
  • the present invention is a heat treatable low-e coated glass with single silver in order to be used in architectural and automotive glasses. Accordingly, said invention is characterized in that the coating side reflection a* value is between -7.5 and -2.0; the glass side reflection a* value is between -7.5 and -2.0; the coating side reflection b* value is between -13 and -2.4; the glass side reflection b* value is between -35 and -14; and Tb value is between -2.0 and +2.2 and the followings are respectively provided outwardly from the glass:
  • a first dielectric layer selected from Si x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x , a first absorbing layer selected from NiCr, NiCrO x ,
  • a second dielectric layer selected from Si x N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x , a seed layer selected from NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x ,
  • a second absorbing layer selected from NiCr, NiCrO x ,
  • a barrier layer selected from NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x ,
  • a third dielectric layer selected from NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x , a fourth dielectric layer selected from Si x N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x , a fifth dielectric layer selected from Si x N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x , an upper dielectric layer selected from Si x N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x .
  • the coating side reflection a* value is between -7.0 and -2.5 and the glass side reflection a* value is between -7.0 and -2.5.
  • the coating side reflection b* value is between -10 and -2.8 and the glass side reflection b* value is between -32 and -17.
  • Tb value is between -1.5 and 1.2.
  • first dielectric layer comprising Si x N y ,
  • first absorbing layer comprising NiCr
  • infrared reflective layer comprising Ag
  • barrier layer comprising NiCrO x
  • fourth dielectric layer comprising Si x N y ,
  • upper dielectric layer comprising TiO x .
  • the thickness of the first dielectric layer comprising Si x N y is between 16 nm and 40 nm
  • the thickness of the first absorbing layer comprising NiCr is between 2.5 nm and
  • the thickness of the second dielectric layer comprising Si x N y is between 35 nm and 65 nm
  • the thickness of the seed layer comprising ZnAIO x is between 10 nm and 35 nm
  • the thickness of the second absorbing layer comprising NiCr is between 1 nm and 3 nm
  • the thickness of the infrared reflective layer comprising Ag is between 9 nm and 18 nm
  • the thickness of the barrier layer comprising NiCrO x is between 1 nm and 2 nm
  • the thickness of the third dielectric layer comprising ZnAIO x is between 6 nm and 27 nm
  • the thickness of the fourth dielectric layer comprising Si x N y is between 12 nm and 32 nm
  • the thickness of the fifth dielectric layer comprising SiO x N y is between 8 nm and 22 nm
  • the thickness of the upper dielectric layer comprising TiO x is between 3.5 nm and
  • Figure 1 is a representative view of the low-e coated glass.
  • low-e coated (20) glasses (10) related to architecture and automotive is realized by means of“sputtering” method.
  • the present invention essentially relates to low-e coated (20) glasses (10) with single silver whose thermal process resistance is high and used as thermal isolation glass (10) which transmits daylight and relates to the ingredient and application of said low-e coating (20).
  • a low-e coating (20) comprising pluralities of metal, metal oxide and metal nitride/oxy-nitride layers positioned on the glass (10) surface by using sputtering method in order to obtain a low-e coated (20) glass (10) designed in a heat treatable manner and having medium visible light transmittance in order to be applied onto the surface of a glass (10). Said layers are collected on each other respectively under vacuum.
  • the thermal process at least one of and/or a number of tempering, partial tempering, annealing, bending and lamination processes can be used.
  • the subject matter low-e coated (20) glass (10) can be used as architecture and automotive glass (10).
  • low-e coating (20) there is an infrared reflective layer (26) which transmits the visible region at the targeted level and which provides reflection (less transmittance) of thermal radiation in the infrared spectrum.
  • the infrared reflective layer (26) comprises Ag and its thermal emissivity is low.
  • the thickness of the infrared reflective layer (26) including Ag is between 9 nm and 18 nm. In the preferred application, the thickness of the infrared reflective layer (26) including Ag is between 12 nm and 15 nm.
  • the refraction indices of all layers are determined by using calculation methods through optic constants obtained from single layer measurements taken. Said refraction indices are the refraction index data at 550 nm.
  • a first dielectric layer (21) is used as the lowermost layer in a manner contacting the glass (10).
  • Said first dielectric layer (21) comprises at least one of S N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x layers.
  • the first dielectric layer (21) comprises Si x N y .
  • the first dielectric layer (21) including Si x N y behaves as diffusion barrier and serves to prevent alkali ion migration which is facilitated at high temperature.
  • the first dielectric layer (21) including Si x N y supports the resistance of the coating (20) against the thermal processes.
  • the variation range for the refraction index of the first dielectric layer (21) including Si x N y is between 2.00 and 2.10.
  • the thickness of the first dielectric layer (21) including Si x N y is between 16 nm and 40 nm. In the preferred application, the thickness of the first dielectric layer (21) including Si x N y is between 20 nm and 36 nm. In a further preferred application, the thickness of the first dielectric layer (21) including Si x N y is between 24 nm and 32 nm.
  • a first absorbing layer (22) is positioned on the first dielectric layer (21) including Si x N y .
  • Said first absorbing layer (22) comprises at least one of NiCr, NiCrOx, ZnAIO layers.
  • the first absorbing layer (22) comprises NiCr.
  • the thickness of the first absorbing layer (22) including NiCr is between 2.5 nm and 5.5 nm. In the preferred application, the thickness of the first absorbing layer (22) including NiCr is between 3.0 nm and 5.0 nm. In a further preferred application, the thickness of the first absorbing layer (22) including NiCr is between 3.2 nm and 4.5 nm.
  • the second dielectric layer (23) is positioned on the first absorbing layer (22) including NiCr.
  • Said second dielectric layer (23) comprises at least one of Si x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x layers.
  • the second dielectric layer (23) comprises Si x N y .
  • the thickness of the second dielectric layer (23) including Si x N y is between 35 nm and 65 nm.
  • the thickness of the second dielectric layer (23) including Si x N y is between 40 nm and 60 nm.
  • the thickness of the second dielectric layer (23) including Si x N y is between 45 nm and 56 nm.
  • a seed structure (24) is positioned on the second dielectric layer (23) including Si x N y .
  • the seed structure (24) comprises at least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x .
  • the seed structure (24) comprises at least one seed layer (241). At least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x is used as said seed layer (241).
  • the seed layer (241) comprises ZnAIO x .
  • the seed layer (241) including ZnAIO x and a second absorbing layer (242) are used together.
  • at least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x is used as the second absorbing layer (242).
  • the second absorbing layer (242) comprises NiCr.
  • the thickness of the second absorbing layer (242) including NiCr is between 1 nm and 3.0 nm.
  • the thickness of the second absorbing layer (242) including NiCr is between 1.2 nm and 2.7 nm. In a further preferred application, the thickness of the second absorbing layer (242) including NiCr is between 1.5 nm and 2.4 nm.
  • the thickness of the seed layer (241) including ZnAIO x is between 10 nm and 35 nm. In the preferred application, the thickness of the seed layer (241) including ZnAIO x is between 14 nm and 30 nm. In a further preferred application, the thickness of the seed layer (241) including ZnAIO x is between 18 nm and 26 nm. In the subject matter low-e coating (20), the second absorbing layer (242) including NiCr is used for obtaining the targeted color and low transmittance.
  • a barrier layer (26) is positioned on the infrared reflective layer (25) including Ag. At least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x is used as said barrier layer (26).
  • the barrier layer (26) comprises NiCrO x .
  • the thickness of the barrier layer (26) including NiCrO x is between 1 nm and 2 nm. In the preferred application, the thickness of the barrier layer (26) including NiCrO x is between 1 n and 1.8 nm. In a further preferred application, the thickness of the barrier layer (26) including NiCrO x is between 1 nm and 1.6 nm.
  • a third dielectric layer (27) is positioned on the barrier layer (26) including NiCrO x . At least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x is used as said third dielectric layer (27).
  • the third dielectric layer (27) comprises ZnAIO x .
  • the thickness of the third dielectric layer (27) including ZnAIO x is between 6 nm and 27 nm. In the preferred application, the thickness of the third dielectric layer (27) including ZnAIO x is between 10 nm and 23 nm. In a further preferred application, the thickness of the third dielectric layer (27) including ZnAIO x is between 14 nm and 19 nm.
  • the barrier layer (26) including NiCrO x is used for not affecting the infrared reflective layer (25) including Ag from the layers provided thereafter and from the process gases used for production of these layers.
  • the barrier layer (26) including NiCrO x provides structural compliancy in the metallic and dielectric passage between the dielectric layers which will be provided after the infrared reflective layer (25) including Ag.
  • the amount of 0 2 used as reactive gas is optimized.
  • the speed of passage under the target is optimized.
  • a fourth dielectric layer (28) is positioned on the third dielectric layer (27) including ZnAIO x . At least one of Si x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x is used as said fourth dielectric layer (28).
  • the fourth dielectric layer (28) comprises Si x N y .
  • the thickness of the fourth dielectric layer (28) including Si x N y is between 12 nm and 32 nm.
  • the thickness of the fourth dielectric layer (28) including Si x N y is between 14 nm and 28 nm.
  • the thickness of the fourth dielectric layer (28) including Si x N y is between 16 nm and 24 nm.
  • a fifth dielectric layer (29) is positioned on the fourth dielectric layer (28) including Si x N y . At least one of Si x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x is used as said fifth dielectric layer (29).
  • the fifth dielectric layer (29) comprises SiO x N y .
  • the thickness of the fifth dielectric layer (29) including SiO x N y is between 8 nm and 22 nm. In the preferred application, the thickness of the fifth dielectric layer (29) including SiO x N y is between 10 nm and 20 nm. In a further preferred application, the thickness of the fifth dielectric layer (29) including SiO x N y is between 12 n and 18 nm.
  • An upper dielectric layer (30) is positioned on the fifth dielectric layer (29) including SiO x N y . At least one of Si x N y , SiO x N y , ZnSnO x , TiO x , TiN x , ZrN x is used as said upper dielectric layer (30).
  • the upper dielectric layer (30) comprises TiO x .
  • the thickness of the upper dielectric layer (30) including TiO x is between 3.5 nm and 8.5 nm. In the preferred application, the thickness of the upper dielectric layer (30) including TiO x is between 4.0 nm and 7.5 nm. In a further preferred application, the thickness of the upper dielectric layer (30) including TiO x is between 4.5 nm and 6.5 nm.
  • the glass (10) side reflection b* value changes between -35 and -14. In the preferred application of the present invention, the glass (10) side reflection b* value changes between - 32 and -17. More preferably, the glass (10) side reflection b* value changes between -29 and -20.
  • the coating side reflection b* value is between -13 and -2.4. In the preferred application of the present invention, the coating side reflection b* value changes between -10 and -2.8. More preferably, the coating side reflection b* value changes between -6 and -3.2.
  • the transmittance Tb value of the low-e coated (20) glass (10) is obtained between -2.0 and 2.2. In the preferred application of the present invention, the transmittance Tb value of the low-e coated (20) glass (10) is obtained between -1.5 and 1.2.
  • the glass side reflection a* value changes between -7.5 and -2.0.
  • the glass (10) side reflection a* value changes between -7 and -2.5. More preferably, the glass (10) side reflection a* value changes between -6.5 and -3.0.
  • the coating side reflection a* value is between -7.5 and -2.0.
  • the coating side reflection a* value changes between -7.0 and -2.5. More preferably, the coating side reflection a* value changes between -6.5 and -3.0.
  • the coating and glass side b* values are important and besides, the coating and glass side a* values and the transmittance Tb value are also important. For instance, when the Tb value is kept close to “0”, the shift of the low-e coated (20) glass (10) color to yellow is prevented and thus, the dominance of the blue color in the low-e coated (20) glass (10) is increased. In a similar manner, as the coating and the glass side a* values are kept in the negative region, the shift of the low-e coated (20) glass (10) color to red is prevented and thus, the dominance of the blue color in the low-e coated (20) glass (10) is increased.
  • the layers, provided under the infrared reflective layer (25) including Ag play an important role.
  • the first absorbing layer (22) including NiCr between two Si x N y used as the first dielectric layer (21) and the second dielectric layer (23) the formation of a thick Si x N y layer is prevented, and thus, increase in Tb transmittance value is prevented.
  • the coating and glass side b* value increases in the negative direction, and the color of the low-e coated (20) glass (10) is provided to stay in the blue region.
  • the first absorbing layer (22) including NiCr the targeted low transmittance is obtained and low reflection values on the glass (10) side and on the film side are obtained.
  • the a* value of the coating side of the glass (10) is decreased, and the color of the low-e coated (20) glass (10) is prevented from shifting to red color and the glass side and coating side b* values of the color is contributed to stay in the negative region and the color of the low-e coated (20) glass (10) stays in the blue region.
  • TiO x which is used as the upper dielectric layer (30), contributes to the mechanical resistance of the low-e coating (20).
  • the usage of two NiCr layers and one NiCrOx layer is required for reaching the targeted performance.
  • the encircling of NiCr which is the first absorbing layer (22), with Si x N y , which is the first dielectric layer (21) and the second dielectric layer (23), plays an important role in reaching the daylight transmittance and the total solar energy transmittance and in reaching the targeted color value.
  • usage of optimum oxygen level in the barrier layer (26), including NiCrO x is important.
  • Coating of the third dielectric layer (27), including ZnAIO x , and the fourth dielectric layer (28), including Si x N y , and the fifth dielectric layer (29), including SiO x N y , and the upper dielectric layer (30), including TiO x , within the mentioned thickness value ranges provides the coating side b* value to stay in the negative region and contributes to the increase of the dominance of blue color in the low-e coated (20) glass (10).
  • the fourth dielectric layer (28), including Si x N y is coated at a thickness which is more than the determined thickness range, the glass side and coating side b* values in the low-e coated (20) glass (10) shift towards“0” and the dominance of the blue color decreases.
  • said fourth dielectric layer (28), including Si x N y is coated at a lower thickness, the coating side a* value in the low-e coated (20) glass (10) increases towards the positive region and the red color increases and thus, this leads to moving away from the targeted color performance.
  • Coating of the third dielectric layer (27), including ZnAIO x , and the fourth dielectric layer (28), including Si x N y , and the fifth dielectric layer (29), including SiO x N y , and the upper dielectric layer (30), including TiO x , within the mentioned thickness value ranges provides the film and glass side reflection values of the low-e coated (20) glass (10) to stay in the targeted performance values.
  • the coating side reflection value of the 6 mm single glass for the low-e coated (20) glass (10) is between 20% and 35%. In the preferred application, the coating side reflection value of the 6 mm single glass for the low-e coated (20) glass (10) is between 25% and 30%. The glass (10) side reflection value of the 6 mm single glass for the low-e coated (20) glass (10) is between 10% and 25%. In the preferred application, the glass (10) side reflection value of the 6 mm single glass for the low-e coated (20) glass (10) is between 15% and 20%.

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

La présente invention concerne un verre (10) à couche à faible émissivité (20) pouvant être traité thermiquement ayant une couche d'argent unique et développé pour une utilisation dans l'architecture et les vitres de véhicules automobiles.
PCT/TR2018/050673 2018-01-11 2018-11-10 Verre à couche à faible émissivité à régulation thermique et solaire efficaces Ceased WO2019209200A2 (fr)

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TR2018/00359 2018-01-11
TR201800359 2018-01-11

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WO2019209200A2 true WO2019209200A2 (fr) 2019-10-31
WO2019209200A3 WO2019209200A3 (fr) 2019-12-19

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN111979520A (zh) * 2020-07-24 2020-11-24 中国航发北京航空材料研究院 一种具有低电阻和低光学损耗的玻璃及其制备方法
WO2022164407A2 (fr) 2021-01-27 2022-08-04 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
RU2839409C1 (ru) * 2021-01-27 2025-05-05 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенное механическое сопротивление

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US6475626B1 (en) * 1999-12-06 2002-11-05 Guardian Industries Corp. Low-E matchable coated articles and methods of making same
KR101386806B1 (ko) * 2005-05-12 2014-04-21 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 저태양열 획득 계수, 향상된 화학적 및 기계적 특성을 갖는 저방사율 코팅 및 이의 제조 방법
US7901781B2 (en) * 2007-11-23 2011-03-08 Agc Flat Glass North America, Inc. Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111979520A (zh) * 2020-07-24 2020-11-24 中国航发北京航空材料研究院 一种具有低电阻和低光学损耗的玻璃及其制备方法
WO2022164407A2 (fr) 2021-01-27 2022-08-04 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
WO2022164407A3 (fr) * 2021-01-27 2022-09-01 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
RU2839409C1 (ru) * 2021-01-27 2025-05-05 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенное механическое сопротивление
RU2844847C1 (ru) * 2021-01-27 2025-08-07 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенный коэффициент отражения теплового излучения

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