WO2019098980A2 - Revêtement à faible émissivité pouvant être traité thermiquement et son procédé de production - Google Patents

Revêtement à faible émissivité pouvant être traité thermiquement et son procédé de production Download PDF

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Publication number
WO2019098980A2
WO2019098980A2 PCT/TR2018/050661 TR2018050661W WO2019098980A2 WO 2019098980 A2 WO2019098980 A2 WO 2019098980A2 TR 2018050661 W TR2018050661 W TR 2018050661W WO 2019098980 A2 WO2019098980 A2 WO 2019098980A2
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Prior art keywords
layer
thickness
dielectric layer
znaio
low
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WO2019098980A3 (fr
Inventor
Erdem ARPAT
Alperen SEZGIN
Sinem ERASLAN
Tuncay TURUTOGLU
Seniz TURKUZ
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Turkiye Sise Ve Cam Fabrikalari AS
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Turkiye Sise Ve Cam Fabrikalari AS
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Publication of WO2019098980A3 publication Critical patent/WO2019098980A3/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings

Definitions

  • the present invention relates to a low-emissivity (low-e) coating with solar control having infrared reflective layers therein and used as thermal isolation glass and which transmits daylight.
  • One of the factors which differentiates optic characteristics of glasses is the coatings applied onto the glass surface.
  • One of the coating applications is the magnetic field supported sputtering method in vacuum medium. This is a method frequently used particularly in the production of architecture and automotive coatings having low-e characteristic. By means of said method, the transmittance and reflection values of the coated glasses in the visible, near infrared and infrared region can be obtained at the targeted levels.
  • selectivity value is also an important parameter in coated glasses.
  • selectivity is defined as the ratio of the transmittance value of the visible region to the solar factor.
  • the selectivity values of coatings can be kept at the targeted levels by means of the number of Ag layers included, the type of the coring layer used and the parametric optimizations of the layers.
  • low emissivity panels may include a substrate and a reflective layer formed over the substrate.
  • the low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate.
  • the top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide.
  • the top dielectric layer may also include aluminum.
  • the concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %.
  • An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
  • the present invention relates to a low-e coated glass with solar control, for bringing new advantages to the related technical field.
  • An object of the present invention is to provide a low-e coated glass which transmits visible light in an efficient manner and which reflects solar energy in an efficient manner.
  • the present invention is a low-e coated glass. Accordingly, said invention is characterized in that said low-e coating respectively comprises outwardly from the glass;
  • first dielectric layer selected from Si x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x ;
  • first coring layer selected from NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x ;
  • first barrier layer selected from NiCr, NiCrO x , TiO x , ZnAIO x ;
  • third dielectric layer selected from Si x N y , TiN x , ZrN x , ZnSnO x , ZnAIO x , SiO x N y , TiO x , ZnO x ;
  • dielectric layer selected from Si x N y , TiN x , ZrN x , ZnSnO x , ZnAIO x , SiO x N y , TiO x , ZnO x ;
  • second coring layer selected from NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x ;
  • second barrier layer selected from NiCr, NiCrO x , TiO x , ZnAIO x ;
  • - fifth dielectric layer selected from ZnSnO x , ZnAIO x , SiO x N y , ZrOx, SiO x , Si x N y , TiO x , ZnO x ;
  • said low-e coating respectively comprises outwardly from the glass:
  • first coring layer comprising ZnAIO x ;
  • first barrier layer comprising NiCrO x ;
  • - second infrared reflective layer comprising Ag
  • - second barrier layer comprising NiCrO x ;
  • said low-e coating respectively comprises outwardly from the glass:
  • first coring layer comprising ZnAIO x ;
  • first barrier layer comprising NiCrO x ;
  • said low-e coating respectively comprises outwardly from the glass:
  • first dielectric layer comprising Si x N y , with thickness between 10 nm - 20 nm;
  • - second dielectric layer comprising TiO x , with thickness between 0 nm - 10 nm;
  • first coring layer comprising ZnAIO x , with thickness between 8 nm - 20 nm;
  • first infrared reflective layer comprising Ag, with thickness between 8 nm - 20 nm;
  • first barrier layer comprising NiCrO x , with thickness between 0.8 nm - 2.0 nm;
  • third dielectric layer comprising ZnAIO x , with thickness between 15 nm - 30 nm;
  • - fourth dielectric layer comprising Si x N y , with thickness between 30 nm - 50 nm;
  • - second coring layer comprising ZnAIO x , with thickness between 15 nm - 30 nm;
  • - second infrared reflective layer comprising Ag, with thickness between 8 nm - 20 nm;
  • second barrier layer comprising NiCrO x , with thickness between 0.8 nm - 2.0 nm;
  • - fifth dielectric layer comprising ZnAIO x , with thickness between 10 nm - 20 nm;
  • - upper dielectric layer comprising SiO x N y , with thickness between 20 nm - 35 nm.
  • said low-e coating respectively comprises outwardly from the glass: - first dielectric layer, comprising Si x N y , with thickness between 10 nm - 20 nm; second dielectric layer, comprising TiO x , with thickness between 2 nm - 8 nm;
  • first coring layer comprising ZnAIO x , with thickness between 8 nm - 20 nm;
  • first infrared reflective layer comprising Ag, with thickness between 8 nm - 20 nm;
  • first barrier layer comprising NiCrO x , with thickness between 0.8 nm - 2.0 nm;
  • third dielectric layer comprising ZnAIO x , with thickness between 15 nm - 30 nm;
  • dielectric layer comprising Si x N y , with thickness between 30 nm - 50 nm; second coring layer, comprising ZnAIO x , with thickness between 15 nm - 30 nm; second infrared reflective layer, comprising Ag, with thickness between 8 nm - 20 nm;
  • second barrier layer comprising NiCrO x , with thickness between 0.8 nm - 2.0 nm;
  • dielectric layer comprising ZnAIO x , with thickness between 10 nm - 20 nm; upper dielectric layer, comprising SiO x N y , with thickness between 20 nm - 35 nm.
  • the present invention is a production method of the low-e coated glass where said method is not limited with the abovementioned sequencing alternatives. Accordingly, the subject matter production method is characterized in that during coating of the first barrier layer and the second barrier layer, the ratio of 0 2 flow speed / power density is smaller than 8 sccm/(Watt*cnr 2 ).
  • Figure 1 is a general view of low-e layer sequencing.
  • low-e coated (20) glasses (10) related to architecture and automotive is realized by means of“sputtering” method.
  • the present invention essentially relates to low-e coated (20) glasses (10) with double silver whose thermal process resistance is high and used as thermal insulation glass (10) which transmits daylight and relates to the ingredient and application of said low-e coating (20).
  • the subject matter low-e coated (20) glass (10) can be used in thermal glass unit and laminated structures for architecture and automotive sectors.
  • a low-e coating (20) comprising pluralities of metal, metal oxide and/or metal nitride/oxy-nitride layers positioned on the glass (10) surface by using sputtering method in order to obtain a low-e coated (20) glass (10) having solar control characteristic and designed in a thermally processable manner and having substantially visible light transmittance in order to be applied onto the surface of a glass (10). Said layers are collected on each other respectively under vacuum.
  • the thermal process at least one of and/or a number of tempering, partial tempering, annealing, bending and lamination processes can be used.
  • the subject matter solar controlled low-e coated (20) glass (10) can be used as architecture and automotive glass (10).
  • low-e coating (20) In terms of the production easiness and in terms of optic characteristics, in order to develop a low-e coating (20) sequencing with solar control characteristics and which is thermally processable, the following data has been detected as a result of experimental studies.
  • the solar energy spectrum is a first infrared reflective layer (22) and a second infrared reflective layer (25) providing thermal radiation reflection (by transmitting less radiation) in the infrared region and providing transmittance of the visible region (hereafter, it will be called T ViS %) at the targeted level.
  • Ag layer is used as the first infrared reflective layer (22) and as the second infrared reflective layer (25), and the thermal emissivity thereof is low.
  • the refraction indices of all layers are determined by using calculated methods through optic constants obtained from single-layer measurements taken. Said refraction indices are the refraction index data at 550 nm.
  • a first dielectric layer (211) is used as the bottom layer.
  • Said first dielectric layer (211) comprises at least one of the following materials: Si x N y , SiAIN x , SiAIO x N y , SiO x N y, ZnSnO x , TiO x , TiN x , ZrN x .
  • the first dielectric layer (21 1) comprises Si x N y .
  • the first dielectric layer (21 1) comprising Si x N y behaves as diffusion barrier and serves to prevent alkali ion migration which becomes easy at high temperature.
  • the first dielectric layer (211) comprising Si x N y supports resistance of the low-e coating (20) against thermal processes.
  • the variation range of the first dielectric layer (21 1) comprising Si x N y is between 2.00 and 2.10.
  • the variation range for the refraction index of the first dielectric layer (21 1) comprising Si x N y is between 2.02 and 2.07.
  • the thickness of the first dielectric layer (21 1) comprising Si x N y is between 10 nm and 20 nm. In the preferred application, the thickness of the first dielectric layer (21 1) comprising Si x N y is between 12 nm and 18 nm. In a further preferred application, the thickness of the first dielectric layer (21 1) comprising Si x N y is between 13 nm and 17 nm.
  • At least one first coring layer (213) is positioned between the first dielectric layer (21 1), comprising Si x N y , and the Ag layer which is the first infrared reflective layer (22).
  • the first coring layer (213) directly contacts the first dielectric layer (21 1) comprising Si x N y .
  • the first coring layer (213) comprises at least one of NiCr, NiCrO x , TiO x , ZnSnO x , ZnAIO x , ZnO x .
  • the first coring layer (213) comprises ZnAIO x .
  • the thickness of the first coring layer (213) is between 8 nm and 20 nm.
  • the thickness of the first coring layer (213) is between 9 nm and 16 nm. In a further preferred application, the thickness of the first coring layer (213) is between 10 nm and 15 nm.
  • a second dielectric layer (212) is positioned between the first coring layer (213) and the first dielectric layer (211) comprising Si x N y . Said second dielectric layer (212) comprises at least one of TiO x , ZrO x , NbO x layers. In the preferred application, TiO x is used as the second dielectric layer (212).
  • TiO x is a material whose refraction index is high, the same optical performance is obtained with less total physical thickness and plays a role which increases T ViS % of the low-e coating (20).
  • the refraction index of TiO x layer is between 2.40 and 2.60. In the preferred application, it is determined as between 2.45 and 2.55.
  • the thickness of TiO x layer which is the second dielectric layer (212) is between 0 nm and 10 nm. In the preferred application, thickness of TiO x layer is between 2 nm and 8 nm. In a further preferred application, the thickness of TiO x layer is between 2 nm and 7 nm.
  • the optimization of the optic performance becomes possible by using the first dielectric layer (211) comprising thinner Si x N y . Even if the T ViS % values of the low-e coated (20) glass (10) do not change under the mentioned thickness value, important changes are observed in the color and optic performance.
  • T ViS % decreases and this leads to diverging from the targeted performance.
  • middle dielectric structure (24) positioned between the first infrared reflective layer (22) and the second infrared reflective layer (25) and which separates the first infrared reflective layer (22) and the second infrared reflective layer (25) from each other and which provides reaching of the low-e layer (20) sequencing to the targeted performance.
  • Said middle dielectric structure (24) comprises at least one dielectric layer.
  • the middle dielectric structure (24) comprises at least one second coring layer (243) positioned in the vicinity of the dielectric layer together with at least one dielectric layer.
  • the second coring layer (243) comprises at least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x .
  • the preferred second coring layer (243) comprises ZnAIO x .
  • the middle dielectric layer structure (24) comprises at least two dielectric layers selected from Si x N y , TiN x , ZrN x , ZnSnO x , ZnAIO x , SiAIN x , SiAIO x N y , SiO x N y , TiO x , ZnO x .
  • the selected two dielectric layers contact each other.
  • the middle dielectric structure (24) comprises a third dielectric layer (241), a fourth dielectric layer (242) and a second coring layer (243).
  • the middle dielectric structure (24) is positioned in a manner directly contacting Ag layer which is the second infrared reflective layer (25).
  • the third dielectric layer (241) comprises ZnAIO x and the fourth dielectric layer (242) comprises Si x N y .
  • the thickness of the ZnAIO x layer which is the third dielectric layer (241) is between 15 nm and 30 nm. In the preferred application, the thickness of the ZnAIO x layer which is the third dielectric layer (241) is between 17 nm and 27 nm. In the further preferred application, the thickness of the ZnAIO x layer which is the third dielectric layer (241) is between 19 nm and 26 nm.
  • the thickness of the fourth dielectric layer (242) comprising Si x N y is between 30 nm and 50 nm. In the preferred application, the thickness of the fourth dielectric layer (242) comprising Si x N y is between 35 nm and 46 nm. In a further preferred application, the thickness of the fourth dielectric layer (242) comprising Si x N y is between 39 nm and 43 nm.
  • the thickness of the ZnAIO x layer which is the second coring layer (243) is between 15 nm and 30 nm. In the preferred application, the thickness of the ZnAIO x layer which is the second coring layer (243) is between 17 nm and 27 nm. In a further preferred application, the thickness of the ZnAIO x layer which is the second coring layer (243) is between 19 nm and 26 nm.
  • the thicknesses and structures of the dielectric layers comprised by said middle dielectric structure (24) are optimized separately and the reflection and color values of the glass (10) side and the coating side create greater number of options for obtaining the targeted values. Besides providing optimization of the reflection and color values targeted in the sandwich form of the middle dielectric structure (24), it is required for improving opto-electronic characteristics of Ag layer which is the second infrared reflective layer (25).
  • the middle dielectric structure (24) is formed by a single and thick layer, the middle dielectric structure (24) targeted to be amorphous is more probable to show a crystalline structure partially and/or completely.
  • the Ag layer which is the second infrared reflective layer (25) and the ZnAIO x which is the second coring layer (243) are in direct contact.
  • the sensitivity in terms of the second coring layer (243) provides growing of the second infrared layer (25) in the required crystallographic orientation.
  • the middle dielectric structure (24) totally has a thickness between 75 nm and 105 nm. In the preferred application, the middle dielectric structure (24) totally has a thickness between 80 nm and 100 nm. More preferably, the middle dielectric structure (24) totally has a thickness between 85 nm and 95 nm.
  • a first barrier layer (23) is positioned on the first infrared reflective layer (22) and a second barrier layer (26) is positioned on the second infrared reflective layer (25).
  • the first barrier layer (23) and the second barrier layer (26) comprise at least one of the materials of NiCr, NiCrO x , TiO x , ZnAIO x .
  • NiCrO x is used as the first barrier layer (23) and as the second barrier layer (26).
  • the thicknesses of NiCrO x layers which are the first barrier layer (23) and the second barrier layer (26) are between 0.8 nm and 2.0 nm.
  • the thicknesses of NiCrO x layers which are the first barrier layer (23) and the second barrier layer (26) are between 0.9 nm and 1.9 nm. In the preferred application, the thicknesses of NiCrO x layers which are the first barrier layer (23) and the second barrier layer (26) are between 1.0 nm and 1.8 nm.
  • NiCrO x layers which are the first barrier layer (23) and the second barrier layer (26) are used for preventing affecting of Ag layers by the process gases used for production of layers provided after the Ag layers which are the first infrared reflective layer (22) and the second infrared reflective layer (25).
  • NiCrO x layers provide structural compliancy in metallic and dielectric passage between the dielectric layers provided after Ag layers and said NiCrO x layers eliminate probable adhesion weakness before the thermal process.
  • NiCrO x layers are primarily oxidized in the thermal processes like tempering, bending, etc. and thus, Ag layers are prevented from being oxidized and deteriorated.
  • An upper dielectric structure (27) is positioned on the second barrier layer (26).
  • Said upper dielectric structure (27) comprises a fifth dielectric layer (271) and an upper dielectric layer (272).
  • the fifth dielectric layer (271) comprises at least one of ZnSnO x , ZnAIO x , SiO x N y , ZrO x , Si O x , Si x N y , TiO x , ZnO x .
  • the upper dielectric layer (272) In case layer comprising SiO x N y is preferred as the upper dielectric layer (272) and in case said layer is used in a directly contacted manner with NiCrO x which is a second barrier layer (26), NiCrO x layer and the layer comprising SiO x N y show incompliant behavior with each other and have weak mechanical and thermal process resistance. For this reason, the fifth dielectric layer (271) is added between the upper dielectric layer (272) comprising SiO x N y and the NiCrO x layer which is the second barrier layer (26) in the low-e coating (20) which is the subject of the patent, and the low-e coating (20) shows stable thermal process behavior. As the fifth dielectric layer (271), ZnAIO x layer is used.
  • ZnAIO x layer which is the fifth dielectric layer (271) has a thickness between 10 nm and 20 nm. In the preferred application, the thickness of the ZnAIO x layer which is the fifth dielectric layer (271) is between 11 nm and 19 nm. In a further preferred application, the thickness of the ZnAIO x layer which is the fifth dielectric layer (271) is between 12 nm and 18 nm.
  • the thickness of the upper dielectric layer (272) comprising SiO x N y is between 20 nm and 35 nm. In the preferred application, the thickness of the upper dielectric layer (272) comprising SiO x N y is between 20 nm and 32 nm. In a further preferred application, the thickness of the upper dielectric layer (272) comprising SiO x N y is between 22 nm and 30 nm.
  • the refraction index range for ZnAIO x used as the first coring layer (213), the third dielectric layer (241), the second coring layer (243) and the fifth dielectric layer (271) is between 1.90 and 2.10. In the preferred embodiment, the refraction index range for ZnAIO x used as the first coring layer (213), the third dielectric layer (241), the second coring layer (243) and the fifth dielectric layer (271) is between 1.95 and 2.05.
  • the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 8 nm and 20 nm. In the preferred application, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 9 nm and 18 nm. More specifically, in order to reach the targeted performance value and in order to obtain low inner and outer reflection values in the visible region and the desired color characteristics, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 10 nm and 17 nm.
  • the product shall have two separate independent infrared reflective layers comprising silver.
  • the ratio of the thickness of the first infrared reflective layer (22) to the thickness of the second infrared reflective layer (25) is between 0.7 and 1.4.
  • the ratio of the thickness of the first infrared reflective layer (22) to the thickness of the second infrared reflective layer (25) is between 0.8 and 1.3.
  • the performance value targeted by means of the abovementioned layer sequencing is 6 mm for single glass (10) and the visible region transmittance value for lower glass (10) usage is preferred to be between 63% and 75% prior to thermal process. More preferably, it shall be between 65% and 71%.
  • the direct solar energy transmittance value prior to thermal process is preferred to be between 30% and 41%. In the further preferred application, it shall be between 33% and 39%.
  • obtaining of this performance shall be supported.
  • the characteristics of the topmost dielectric layer (272) of the low-e coating (20) are substantially important in terms of the storage lifetime, thermal processability, resistance and visual aesthetics of the low-e coated (20) glass (10) since said characteristics determine the character of the coated glass (10) during thermal process.
  • first barrier layer (23) and the second barrier layer (26) Another role of the first barrier layer (23) and the second barrier layer (26) is that the opto electronic characteristics of the first infrared reflective layer (22) and the second infrared reflective layer (25) of the low-e coating (20) are protected during the secondary processes and during the usage lifetime in a stable manner.
  • the coating conditions of the first barrier layer (23) and the second barrier coating (26) of the low-e coating (20) are other critic parameters which determine the character of the coated glass (10) during the thermal process and which affect the opto-electronic characteristics of the low-e coated (20) glass (10).
  • the absorbing behavior of the first barrier layer (23) and the second barrier layer (26) in the low-e coating (20) shall be minimized by means of improving the material characteristic.
  • the absorption effect coming from the first barrier layer (23) and the second barrier layer (26) is optimized and 0 2 flow speed / power density proportion shall be reduced during coating the first barrier layer (23) and the second barrier layer (26) in order to provide fixation of the thickness homogeneity of the first infrared reflective layer (22) and the second infrared reflective layer (25) during the thermal process and without compromising infrared reflection characteristic of the low-e coating (20).

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

La présente invention concerne un verre revêtu à faible émissivité qui transmet une région visible du spectre d'énergie solaire d'une manière efficace et qui réfléchit de manière efficace la région proche infrarouge et la région infrarouge, et concerne son procédé de production.
PCT/TR2018/050661 2017-11-20 2018-11-06 Revêtement à faible émissivité pouvant être traité thermiquement et son procédé de production Ceased WO2019098980A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TR2017/18310 2017-11-20
TR2017/18310A TR201718310A2 (tr) 2017-11-20 2017-11-20 Isil i̇şlenebi̇li̇r bi̇r low-e kaplama ve üreti̇m yöntemi̇

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WO2019098980A2 true WO2019098980A2 (fr) 2019-05-23
WO2019098980A3 WO2019098980A3 (fr) 2019-06-20

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022164407A2 (fr) 2021-01-27 2022-08-04 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
WO2024058746A1 (fr) * 2022-09-16 2024-03-21 Turkiye Sise Ve Cam Fabrikalari A.S. Verre revêtu à faible émissivité présentant un changement de couleur angulaire réduit
EP4284763A4 (fr) * 2021-01-27 2025-03-19 Türkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité et à double argent, présentant une transmittance élevée et une réflexion thermique accrue
RU2839409C1 (ru) * 2021-01-27 2025-05-05 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенное механическое сопротивление
WO2025234955A1 (fr) * 2024-05-06 2025-11-13 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Verre revêtu à faible émissivité présentant une transmittance visible élevée

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WO2022164407A2 (fr) 2021-01-27 2022-08-04 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
WO2022164407A3 (fr) * 2021-01-27 2022-09-01 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité comprenant de l'argent double et présentant une transmittance élevée et une résistance mécanique accrue
EP4284763A4 (fr) * 2021-01-27 2025-03-19 Türkiye Sise Ve Cam Fabrikalari Anonim Sirketi Revêtement à faible émissivité et à double argent, présentant une transmittance élevée et une réflexion thermique accrue
RU2839409C1 (ru) * 2021-01-27 2025-05-05 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенное механическое сопротивление
RU2844847C1 (ru) * 2021-01-27 2025-08-07 Туркые Сысе Ве Джам Фабрыкалары Аноным Сыркеты Низкоэмиссионное покрытие, содержащее двойной серебряный слой и имеющее высокий коэффициент пропускания и повышенный коэффициент отражения теплового излучения
WO2024058746A1 (fr) * 2022-09-16 2024-03-21 Turkiye Sise Ve Cam Fabrikalari A.S. Verre revêtu à faible émissivité présentant un changement de couleur angulaire réduit
WO2025234955A1 (fr) * 2024-05-06 2025-11-13 Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi Verre revêtu à faible émissivité présentant une transmittance visible élevée

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