WO2019240111A1 - Élément piézoélectrique, capteur de forme d'onde d'oscillation et module capteur de forme d'onde d'oscillation - Google Patents

Élément piézoélectrique, capteur de forme d'onde d'oscillation et module capteur de forme d'onde d'oscillation Download PDF

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Publication number
WO2019240111A1
WO2019240111A1 PCT/JP2019/023029 JP2019023029W WO2019240111A1 WO 2019240111 A1 WO2019240111 A1 WO 2019240111A1 JP 2019023029 W JP2019023029 W JP 2019023029W WO 2019240111 A1 WO2019240111 A1 WO 2019240111A1
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WIPO (PCT)
Prior art keywords
piezoelectric
piezoelectric element
waveform sensor
vibration
layers
Prior art date
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Ceased
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PCT/JP2019/023029
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English (en)
Japanese (ja)
Inventor
隆幸 後藤
松田　勲
寛之 清水
純明 岸本
幸宏 小西
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Priority to CN201980038755.1A priority Critical patent/CN112262483A/zh
Publication of WO2019240111A1 publication Critical patent/WO2019240111A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/02—Detecting, measuring or recording for evaluating the cardiovascular system, e.g. pulse, heart rate, blood pressure or blood flow
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Definitions

  • the present invention relates to a piezoelectric element, a vibration waveform sensor using the piezoelectric element, and a vibration waveform sensor module.
  • the piezoelectric element, the vibration waveform sensor, and the vibration waveform sensor suitable for detecting various vibration waveforms such as a pulse.
  • module improvements are possible.
  • Patent Document 1 discloses a broadband sensor for the purpose of efficiently detecting sound waves, pulse waves, and the like.
  • a piezoelectric element is provided on the surface of an insulating substrate.
  • a cylindrical member having an opening is provided.
  • Conventional vibration waveform sensors for broadband use are large-scale, such as a cantilever structure in order to detect low-frequency vibrations.
  • the opening is brought into contact with the body surface and sealed. By forming the cavity, it is possible to detect minute vibrations in a wide band in a compact and low noise manner.
  • volumetric acoustic waves such as a piezoelectric filter, a piezoelectric resonator, and a piezoelectric gyro are used by using a piezoelectric single crystal composition having a large electromechanical coupling coefficient or piezoelectric constant and a low sound speed or SAW speed.
  • SAW speed sound speed
  • piezoelectric single crystals represented by lead zirconate titanate (PZT) and lead titanate (PT) are known and widely used.
  • PZT lead zirconate titanate
  • PT lead titanate
  • the piezoelectric single crystal composition is used for the piezoelectric layer, it cannot be said that the manufacturing cost is preferable.
  • the present invention focuses on this point, and its purpose is to perform vibration detection with high sensitivity without using ceramics and single crystal materials containing lead. Another object is to reduce vibrations and to detect vibrations advantageously in terms of cost.
  • the piezoelectric element of the present invention is formed of a plurality of internal electrode layers and a lead-free piezoelectric material, and a plurality of piezoelectric layers polarized in the stacking direction by applying a polarization voltage to the internal electrode layers; And a cover layer laminated on the front and back of the laminate in which the plurality of piezoelectric layers are laminated with the plurality of internal electrode layers interposed therebetween.
  • the lead-free piezoelectric material is an alkali niobate piezoelectric material or barium titanate.
  • the alkali niobate piezoelectric material is (K 1-w-x Na w Li x) a (Sb y Ta z Nb 1-y-z) O 3
  • w, x, y, z, a are 0 ⁇ w ⁇ 1, 0.02 ⁇ x ⁇ 0.1, 0.02 ⁇ w + x ⁇ 1, 0 ⁇ y ⁇ 0.1, 0 ⁇ z ⁇ . 0.4, 1 ⁇ a ⁇ 1.1.
  • the cover layer is less than 50 ⁇ m.
  • the piezoelectric element further includes external electrodes for external connection that are formed at both ends in the long side direction of the piezoelectric element and in which the internal electrode layers are alternately connected.
  • the vibration waveform sensor according to the present invention includes a substrate on which the piezoelectric element is mounted such that the polarization direction thereof is perpendicular to the mounting surface.
  • a vibration ring for transmitting the vibration to the piezoelectric element is provided around the piezoelectric element.
  • the vibration ring is set to a ground potential through the substrate.
  • the vibration waveform sensor module of the present invention includes the vibration waveform sensor and a charge amplifier that outputs a voltage proportional to the amount of charge generated in a piezoelectric element of the vibration waveform sensor.
  • a piezoelectric element is formed by laminating a plurality of lead-free piezoelectric materials with an internal electrode layer in between, and a detection output is obtained using a charge amplifier.
  • a charge amplifier In addition to obtaining the same sensitivity as the case, the environmental load is reduced, and the temperature conditions during manufacture and use are relaxed.
  • FIG. 1 It is a figure which shows the piezoelectric element of Example 1 of this invention, (A) shows a main section, (B) is a figure which shows a lamination
  • FIG. 1 shows a piezoelectric element according to the present example.
  • FIG. 1A shows a main cross-sectional structure
  • FIG. 1B shows a laminated structure.
  • the piezoelectric element 100 has a structure in which a plurality of piezoelectric layers 102 and internal electrode layers 104 and 106 are alternately laminated, and further, a cover layer or a protective layer 108 is laminated thereon.
  • it has a multilayer structure similar to that of a multilayer ceramic capacitor (MLCC).
  • MLCC multilayer ceramic capacitor
  • a lead-free or lead-free piezoelectric material for example, an alkali niobate-type piezoelectric material is used, and the thickness is 20 ⁇ m.
  • the internal electrode layers 104 and 106 for example, a conductive material such as Ag, Ag—Pd alloy, Ni, Cu, or Ni—Cu alloy is used, and the thickness is set to 3 ⁇ m, for example.
  • the cover layer 108 an insulating material is used. In this embodiment, the same material as that of the piezoelectric layer 102 is used. The thickness of the cover layer 108 is preferably less than 50 ⁇ m in order not to prevent bending due to vibration.
  • a piezoelectric material represented by the following general formula (1) is preferably used as the alkali niobate-based piezoelectric material, which is an example of a lead-free piezoelectric material.
  • w, x, y, z, and a are 0 ⁇ w ⁇ 1, 0.02 ⁇ x ⁇ 0.1, 0.02 ⁇ w + x ⁇ 1, 0 ⁇ y ⁇ 0.1, 0 ⁇ z ⁇ 0.4, 1 ⁇ a ⁇ 1.1 It is.
  • the number of stacked layers may be set as appropriate.
  • the stacked body is manufactured so that the piezoelectric layer 102 has 10 layers.
  • As external dimensions of the piezoelectric element 100 for example, the length of the long side is 3.2 mm, the length (width) of the short side is 1.6 mm, and the thickness is 0.3 mm.
  • a manufacturing method a plurality of piezoelectric layers 102 and internal electrode layers 104 and 106 are alternately stacked, a cover layer 108 is further stacked, and then firing is performed.
  • the external electrode 120 is formed on the end surface where the internal electrode layer 104 is exposed, and the external electrode 122 is formed on the end surface where the internal electrode layer 106 is exposed, among the ends in the long side direction of the laminate.
  • the internal electrode layers 104 and 106 are alternately drawn to the end face on the long side, and are connected to the external electrodes 120 and 122 for external connection, respectively.
  • a high voltage is applied between the external electrodes 120 and 122 to polarize the piezoelectric layer 102 to impart piezoelectricity.
  • the polarization direction of the piezoelectric layer 102 is the stacking direction of the internal electrode layers 104 and 106, that is, the thickness direction.
  • FIG. 2A shows the amplitude depending on the material used.
  • the amplitude of alkali niobate (AN) ceramics is as low as one-tenth that of PZT ceramics, but by stacking these, almost the same amplitude is obtained.
  • alkali niobate ceramics have a higher Curie temperature than PZT ceramics, while PZT ceramics are about 300 ° C., whereas alkali niobate ceramics are 400 ° C. or higher. For this reason, there also exists an advantage that the thermal conditions in a manufacturing process or a use condition come to be eased.
  • FIG. 3 shows a basic configuration of the vibration waveform sensor of the present embodiment.
  • FIG. 3A shows a cross section of the vibration waveform sensor 10
  • FIG. 3B shows an exploded state.
  • FIG. 3C shows a state viewed from the bottom side.
  • the vibration waveform sensor 10 has a structure in which a piezoelectric element 100 is disposed on the main surface of a substrate 20 and this piezoelectric element 100 is covered with a vibration ring 40 that acts as a vibration introducing body. .
  • the substrate 20 is for fixing and supporting the piezoelectric element 100, and for extracting the electrodes and amplifying the signals.
  • a pair of electrode lands 22 and 23 are provided near the center, and a ground conductor 24 is formed around the pair of electrode lands 22 and 23.
  • the electrode lands 22 and 23 are drawn out by through holes 22A and 23A on the back side of the substrate 20.
  • the external electrodes 120 and 122 of the piezoelectric element 100 are mounted on the electrode lands 22 and 23 by solder or conductive resins 130 and 132 (see FIG. 1 (A)). .
  • the piezoelectric element 100 and the amplifier provided on the back surface side of the substrate 20 are connected by the electrode lands 22 and 23 and the through holes 22A and 23A.
  • An insulating resin may be provided so as to cover the electrode lands 22 and 23, and the piezoelectric element 100 may also be covered with a resin.
  • the piezoelectric element 100 is provided with a vibration ring 40 so as to surround the piezoelectric element 100, and the vibration ring 40 is electrically joined to the ground conductor 24.
  • the ground conductor 24 is drawn out to the back surface side of the substrate 20 through through holes 24A and 24B (only FIG. 3A is shown).
  • the vibration ring 40 is made of, for example, stainless steel and has conductivity.
  • the vibration ring 40 shares a ground potential with the skin of the human body in contact with the vibration ring 40, introduces microvibration of a living body, for example, the skin, and further has a substrate. It functions as a vibration introducing body that transmits to 20.
  • FIG. 4D shows the circuit configuration of the vibration waveform sensor module 200, and the output of the vibration waveform sensor 10 is input to a charge amplifier (charge amplifier) 50 and amplified.
  • the charge amplifier 50 is mounted on the substrate 20 described above, and a voltage proportional to the electric charge generated in the piezoelectric element 100 is output.
  • the output of the charge amplifier 50 is converted into a digital signal by an A / D converter (not shown) and output.
  • the vibration ring 40 hits the skin BD of the human body at an appropriate position such as a finger of the human body with the medical fixing tape 12 or the like.
  • the pulse wave which is a volume change caused by the inflow of blood accompanying the pulsation of the heart, is transmitted to the vibration ring 40 of the vibration waveform sensor module 200 as a minute vibration of the skin BD.
  • the vibration of the vibration ring 40 further vibrates the substrate 20 that also functions as a vibration body or a strain generating body, and the minute vibration transmitted from the vibration ring 40 is transmitted to the piezoelectric element 100. Thereby, for example, minute vibration of the skin BD is detected as a voltage signal.
  • the piezoelectric element 100 has a structure in which a large number of piezoelectric layers 102 are stacked. For this reason, when viewed as a capacitor, the area increases, the amount of accumulated charge also increases, and the output of the charge amplifier 50 that outputs a voltage proportional to the amount of charge also increases.
  • FIG. 2 (B) uses a vibration waveform sensor module using a conventional piezoelectric element having one layer of a PZT-based piezoelectric material and the piezoelectric element of this example in which 10 layers of lead-free alkali niobate-based piezoelectric material are stacked.
  • 2 shows a comparison of pulse wave waveform detection output by the vibration waveform sensor module.
  • the shape dimension of the piezoelectric element is 3.2 mm long side ⁇ 1.6 mm short side ⁇ 0.3 mm thickness.
  • the PZT-based conventional structure and this example both have almost similar outputs, and as in this example, lead-free piezoelectric materials with a small electromechanical coupling coefficient were used.
  • good waveform detection can be performed by using a laminated structure.
  • this invention is not limited to the Example mentioned above, A various change can be added in the range which does not deviate from the summary of this invention.
  • the following are also included.
  • the material of each part shown in the said Example is an example, You may use various well-known materials.
  • a lead-free alkaline niobate piezoelectric material is used as the piezoelectric layer 102, but various other lead-free piezoelectric materials such as barium titanate may be used.
  • the shape dimensions of the piezoelectric element 100 and the number of stacked piezoelectric layers 102 may be set as appropriate in the same manner.
  • the pulse wave detection shown in the above embodiment is an example, and may be applied to detection of various vibrations.
  • the charge amplifier 50 is mounted on the substrate 20 in the above embodiment, the charge amplifier 50 may be provided outside the vibration waveform sensor 10.
  • a piezoelectric element is formed by laminating a plurality of lead-free piezoelectric materials with an internal electrode layer interposed therebetween, and a detection output is obtained using a charge amplifier.
  • the environmental load is reduced and the temperature conditions during manufacturing and use are eased. Is preferred.
  • Vibration waveform sensor 12 Fixed tape 20: Substrate 22, 23: Electrode land 22A, 23A: Through hole 24: Ground conductor 24A, 24B: Through hole 40: Vibration ring 50: Charge amplifier 100: Piezoelectric element 102: Piezoelectric layer 104, 106: Internal electrode layer 108: Cover layer 120, 122: External electrode 130, 132: Conductive resin 140: Substrate 200: Vibration waveform sensor module

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  • Chemical & Material Sciences (AREA)
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  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Le problème décrit par la présente invention est de détecter une oscillation avec une sensibilité élevée sans utiliser un matériau céramique contenant du plomb ou un matériau monocristallin, et de réduire la charge environnementale. La solution de l'invention porte sur un élément piézoélectrique 100 dans lequel des couches piézoélectriques 102 et des couches d'électrode interne 104, 106 sont empilées en alternance, et des couches de recouvrement 108 sont également empilées. Un matériau piézoélectrique sans plomb, tel qu'un matériau piézoélectrique niobate alcalin, est utilisé comme couche piézoélectrique 102. Des électrodes externes 120, 122 sont formées sur des surfaces d'extrémité où les couches d'électrode interne 104, 106 sont apparentes, et une tension élevée est appliquée aux électrodes externes 120, 122 pour polariser la couche piézoélectrique 102. Les électrodes externes 120, 122 sont fixées sur une partie de connexion électrique d'un substrat 140 par de la brasure ou des résines conductrices 130, 132. Étant donné qu'un matériau piézoélectrique qui ne contient pas de plomb est utilisé, le coefficient de couplage électromécanique sera faible par comparaison au cas où un matériau piézoélectrique monocristallin est utilisé. Cependant, par empilement d'un grand nombre de couches piézoélectriques, une sensibilité de détection d'oscillation suffisante peut être obtenue et la charge environnementale peut être réduite.
PCT/JP2019/023029 2018-06-14 2019-06-11 Élément piézoélectrique, capteur de forme d'onde d'oscillation et module capteur de forme d'onde d'oscillation Ceased WO2019240111A1 (fr)

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CN201980038755.1A CN112262483A (zh) 2018-06-14 2019-06-11 压电元件、振动波形传感器和振动波形传感器组件

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JP2018113303A JP2019216203A (ja) 2018-06-14 2018-06-14 圧電素子，振動波形センサー，及び振動波形センサーモジュール
JP2018-113303 2018-06-14

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US12360266B2 (en) 2021-09-14 2025-07-15 Halliburton Energy Services, Inc. Acoustic transducer with piezoelectric elements having different polarities
US20240235512A9 (en) * 2022-10-19 2024-07-11 Vanguard International Semiconductor Corporation Micro-electro-mechanical system device and piezoelectric composite stack thereof
TWI865965B (zh) * 2022-11-16 2024-12-11 世界先進積體電路股份有限公司 微機電裝置及其壓電複合疊層

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JP2010087380A (ja) * 2008-10-01 2010-04-15 Taiyo Yuden Co Ltd 圧電駆動素子及び圧電駆動装置
JP2011037697A (ja) * 2009-07-14 2011-02-24 Ngk Insulators Ltd 圧電／電歪磁器組成物
JP2012134428A (ja) * 2010-12-24 2012-07-12 Canon Inc 圧電デバイスの駆動方法
WO2016167202A1 (fr) * 2015-04-17 2016-10-20 太陽誘電株式会社 Capteur de forme d'onde de vibration et dispositif d'analyse de forme d'onde
JP2017157829A (ja) * 2016-02-26 2017-09-07 京セラ株式会社 板状基体および電子部品

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US20110012051A1 (en) * 2009-07-14 2011-01-20 Ngk Insulators, Ltd. Piezoelectric/electrostrictive ceramic composition
WO2014119702A1 (fr) * 2013-01-29 2014-08-07 Canon Kabushiki Kaisha Matériau piézoélectrique, élément piézoélectrique, et équipement électronique
JP6091281B2 (ja) * 2013-03-25 2017-03-08 住友化学株式会社 圧電体薄膜積層基板
JP2015087188A (ja) * 2013-10-29 2015-05-07 セイコーエプソン株式会社 振動素子、振動子、電子機器および移動体
JP6457415B2 (ja) * 2016-03-10 2019-01-23 太陽誘電株式会社 圧電素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087380A (ja) * 2008-10-01 2010-04-15 Taiyo Yuden Co Ltd 圧電駆動素子及び圧電駆動装置
JP2011037697A (ja) * 2009-07-14 2011-02-24 Ngk Insulators Ltd 圧電／電歪磁器組成物
JP2012134428A (ja) * 2010-12-24 2012-07-12 Canon Inc 圧電デバイスの駆動方法
WO2016167202A1 (fr) * 2015-04-17 2016-10-20 太陽誘電株式会社 Capteur de forme d'onde de vibration et dispositif d'analyse de forme d'onde
JP2017157829A (ja) * 2016-02-26 2017-09-07 京セラ株式会社 板状基体および電子部品

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CN112262483A (zh) 2021-01-22

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