WO2020007533A1 - Appareil lithographique et appareil de refroidissement - Google Patents

Appareil lithographique et appareil de refroidissement Download PDF

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Publication number
WO2020007533A1
WO2020007533A1 PCT/EP2019/063706 EP2019063706W WO2020007533A1 WO 2020007533 A1 WO2020007533 A1 WO 2020007533A1 EP 2019063706 W EP2019063706 W EP 2019063706W WO 2020007533 A1 WO2020007533 A1 WO 2020007533A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
membrane
gas
cooling
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2019/063706
Other languages
English (en)
Inventor
Nafiseh TALEBAN FARD
Evert Auke Rinze WESTERHUIS
Adrianus Hendrik Koevoets
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Priority to CN201980045146.9A priority Critical patent/CN112384863B/zh
Publication of WO2020007533A1 publication Critical patent/WO2020007533A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Definitions

  • An advantage may be the removal of parasitic heat loads, related heatshields, conditioning solutions and reduction in pumping power when compared to other systems.
  • the gas flow system may be configured to provide a flow of a gas below the membrane system. This may provide an advantage of increasing the fly height of the cooling apparatus.
  • the gas flow system may be configured to provide the flow of the gas between the cooling element and the substrate, the flow may be configured to increase heat transfer from the substrate to the cooling element.
  • the lithographic apparatus may further comprise an additional gas flow system which may be configured to provide a flow of an additional gas above the membrane system. This may avoid contamination at the membrane.
  • the lithographic apparatus may further comprise a barrier positioned at an outer periphery of the cooling apparatus and extending outwards and/or upwards from the cooling apparatus.
  • Figure 6 depicts a cross sectional view of the cooling apparatus taken through line A-A’ of Figure 5 according to an embodiment of the invention.
  • Figure 1 shows a lithographic system comprising a radiation source SO and a lithographic apparatus LA.
  • the radiation source SO is configured to generate an EUV radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA.
  • the lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g., a mask), a projection system PS and a substrate table WT configured to support a substrate W.
  • a patterning device MA e.g., a mask
  • the radiation source SO may be a laser produced plasma (LPP) source, a discharge produced plasma (DPP) source, a free electron laser (FEL) or any other radiation source that is capable of generating EUV radiation.
  • LPP laser produced plasma
  • DPP discharge produced plasma
  • FEL free electron laser
  • the lithographic apparatus comprises a cooling apparatus 20 located above the substrate W.
  • the cooling apparatus 20 provides localised cooling of the substrate W in the vicinity of the radiation beam B.
  • the cooling apparatus 20 is described in detail further below.
  • the cooling elements 22, 24 are located either side of the radiation beam B’ in the scanning direction (i.e. in the Y-direction).
  • the cooling elements 22, 24 are positioned above the substrate W and adjacent the projection path of the patterned EUV radiation beam B’.
  • the cooling elements 22, 24 are adjacent to an exposure area E (i.e. an area upon which the radiation beam B is incident).
  • the term "adjacent" may be interpreted as meaning less than 1 cm from an edge of the exposure area E.
  • the cooling elements 22, 24 may be less than 0.5 cm from an edge of the exposure area E, and may be around 0.1 cm from an edge of the exposure area E.
  • the cooling elements 22, 24 provide localised cooling of the substrate W in areas which he beneath the cooling elements 22, 24.
  • the first cooling element 22 cools part of the substrate that is about to be exposed by the radiation beam B and the second cooling element 24 cools part of the substrate W that has just been exposed by the radiation beam B’.
  • the scanning exposure moves the substrate W in the negative Y-direction (from right to left in Figure 2) then the second cooling element 24 provides cooling of part of the substrate that is about to be exposed by the radiation beam B’ and the first cooling element 22 provides cooling of part of the substrate W that has just been exposed by the radiation beam B’ .
  • Each cooling element 22, 24 is configured to receive heat from the substrate W and to transfer that heat to some other location, for example using a cooling fluid (e.g. water).
  • a cooling fluid e.g. water
  • the cooling fluid is not intended to imply that the fluid must have a particular temperature but instead indicates that the fluid transports heat away from the cooling element 22, 24.
  • the cooling fluid is passed through cooling conduits 25 A, 25B, 25C, 25D in the cooling elements 22, 24.
  • the cooling elements 22, 24 may be kept at a relatively very low temperature, e.g. a temperature of -70 degrees Celsius.
  • the cooling apparatus 20 comprises a membrane system, which in this example is a single membrane 32, located in the slit 30.
  • the membrane 32 is positioned in the projection path of the patterned EUV radiation beam B’.
  • the slit 30 provides the only path for contaminants and/or gas etc to pass from the region 18 to the projection system PS.
  • the membrane 32 being in position in the slit 30 physically closes the slit 30. Therefore, the membrane 32 physically separates the projection system PS from the region 18.
  • the cooling apparatus 20 with the membrane 32 may be considered to isolate the region 18 from the projection system PS and vice versa.
  • the cooling apparatus with the membrane system may be referred to as a cooling mask.
  • the membrane system may have more than one membrane, e.g. as shown in Figure 5.
  • the barrier 34 and the cooling apparatus 20 with the membrane 32 together isolate the region 18 from the projection system PS.
  • the barrier 34 may be integral with the cooling apparatus 20 such that no contaminants and/or gas may pass from the region 18 to the projection system PS.
  • the barrier and the cooling apparatus with the membrane system may be referred to as a cooling mask.
  • the barrier may only be located partially at or around the outer periphery of the cooling apparatus.
  • the cooling apparatus 20 with the barrier 34 functions as a fixed assembly unlike cooling apparatus in other systems that may have to shift up/down due to dose change or wafer surface variation.
  • the cooling elements may be held by a support which includes a mechanism that moves the cooling elements to a desired height above the substrate table WT.
  • the fly height i.e. the distance between the cooling elements 22, 24 and the wafer W
  • the fly height may be larger and so the movement due to the wafer surface variations is not required. Therefore, there will be no gaps between the barrier 34 and the cooling apparatus 20 and the cooling mask (the cooling apparatus 20 and the barrier 34) may be considered to be one body attached (e.g. bolted or welded) to the projection optics box (POB).
  • Figure 3 shows a cross sectional view of the cooling apparatus 20 in position with the barrier 34, which is shown in more detail.
  • the substrate W is shown in Figure 3 but it will be understood that they would be located in the region 18 (also not shown) below the cooling apparatus 20.
  • the lithographic apparatus LA includes a funnel 36.
  • the funnel 36 has an approximate truncated cone shape with a larger diameter hole 36A at the top and smaller diameter hole 36B at the bottom (the bottom being the end closest to the cooling apparatus 20).
  • the funnel 36 includes a rim 36C which extends outwards from the larger diameter hole 36A.
  • the projection path of the patterned EUV radiation beam B’ is through the larger diameter hole 36A and the smaller diameter hole 36B. That is, the patterned EUV radiation beam B’ passes through the funnel 36 before being incident upon the membrane 32 in the cooling apparatus 20.
  • the barrier 34 is attached to the rim 36C of the funnel 36.
  • the funnel 36 is shown with gas delivery conduits 37 which in other systems may be used for supplying a gas flow towards the substrate. However, in embodiments, the funnel 36 does not supply gas through the gas delivery conduits 37. Furthermore, in some embodiments, the funnel 36 may not have gas delivery conduits. It will be appreciated that in other examples, the funnel may have a different size and shape as long as it provides the function of allowing EUV radiation through a portion of the funnel.
  • the funnel 36 may provide a similar function as the barrier 34, either instead of, or in addition, to the barrier 34. That is, providing a shield (or barrier) to separate the region 18 from the projection system PS. More particularly, the arrangement may be such that the only path for gas and/or the contaminants to travel from the region 18 to the projection system PS may be through the funnel 36. In other embodiments, the funnel 36 may not be present and the isolation of the region 18 from the projection system PS may be by other means, such as the barrier 34 or the cooling apparatus 20.
  • the barrier 34 being connected to the cooling apparatus 20 and to the rim 36C of the funnel 36 means that the projection system PS is isolated from the region 18.
  • the location of the membrane 32 is shown in Figure 3 located between the fingers 28, 29 of the cooling elements 22, 24. It can be seen that the slit 30 is an aperture located within the cooling apparatus 20 to allow the patterned radiation beam B’ to pass through the cooling apparatus 20 to be incident on the substrate W below the cooling apparatus 20.
  • the use of the membrane 32 in the cooling apparatus 20 means that contaminants cannot reach the projection system PS. This means that a relatively high flow of gas towards the substrate W to stop contaminants, which in other systems may be provided through the gas delivery conduits 37 in the funnel 36 (also known as a Dynamic Gas Lock - DGL for short), is not required. In other systems the high gas flow from the DGL was required to suppress the contaminants from reaching the projection system PS. In high NA (Numerical Aperture) lithographic apparatus LA systems, the DGL gas flow may need to be increased to maintain the same suppression of contaminants as in lower NA systems.
  • the use of the membrane 32 results in the removal of parasitic heat loads which may have occurred due to the DGL (there was heating on the substrate due to high DGL flow).
  • EUV radiation is highly absorbed by materials and therefore the membrane must be made thin enough so that the desired amount of EUV radiation can pass through the membrane.
  • the strength of the membrane will decrease with decreasing thickness.
  • a more robust membrane can be achieved due to the smaller surface area of the membrane 32 in position in the cooling apparatus 20 as the strength of the membrane will increase with decreasing surface area.
  • a higher pressure difference over the membrane 32 may be allowed due to the increased strength of the membrane 32.
  • the cooling apparatus 20 further comprises gas delivery conduits (not shown) which are configured to deliver gas to below the membrane 32.
  • the gas delivery conduits may be provided in the cooling elements 22, 24.
  • a gas flow system (not shown) is configured to provide the flow of gas below the membrane 32.
  • the gas delivery conduits are at least partially provided in the fingers 28, 29 of the cooling elements 22, 24 such that the gas flow is provided from the fingers 28, 29 into the region 18.
  • the fingers 28, 29 have the advantage of providing better distribution of the cooling flow below the membrane 32 for cleaning purposes to be able to leave the gap as shown in FIG 4. a between the fingers 28, 29 and the wafer W.
  • gas delivered by the gas delivery conduits flows at least partially across the membrane 32 and downwards from the membrane 32.
  • the gas flow may also be directly downwards from the fingers 28, 29 towards the substrate W as shown by the arrows.
  • the use of the membrane 32 thus allows nitrogen to be used as the cooling gas for cooling the substrate W.
  • Nitrogen is 5 times more stable than hydrogen with respect to the thermal accommodation coefficient (TAC) for different surface materials.
  • TAC thermal accommodation coefficient
  • the TAC determines the extent to which a heat load is transferred from a gas to a material (the TAC may be considered to be the fraction of excess energy that is transferred from the gas to the material).
  • the more stable TAC provided by using the nitrogen leads to more accurate cooling of the substrate W. This may directly affect the calibration procedure and may result in less overlay penalty.
  • any other suitable gas may be used (e.g. another inert gas such as hydrogen or helium).
  • Hydrogen may be used, for example, for cleaning the bottom of the membrane 32 by cleaning radicals and ions formed by the passage of the EUV radiation.
  • the gas is delivered at a pressure which is sufficiently high to transport a significant amount of heat from the substrate W to the cooling element bodies 26, 27.
  • the pressure of the gas may be kept sufficiently low that the gas does not cause damage to the substrate W.
  • the pressure of the gas may be kept sufficiently low that it does not generate tangential forces sufficiently strong to cause the substrate W to slip over burls on the substrate table WT (e.g. does not generate tangential forces greater than around lOmN).
  • the pressure of the gas may be kept sufficiently low that significant deformation of the substrate W does not occur at locations where the substrate is supported by burls of the substrate table WT.
  • the substrate may have an outer edge of for example l-3mm which is not supported by burls of the substrate table WT.
  • the pressure of the gas in the region 18 will be affected by the gap between the lowermost surface of the cooling element body 26, 27 and the substrate W (increasing the gap will make it more difficult to maintain a high pressure).
  • the separation may for example be around 20 microns or more, and may be around 50 microns or more.
  • the separation may be around 200 microns or less.
  • a separation between a lowermost surface of the cooling element bodies 26, 27 and the substrate W may be greater than 20 microns, and may for example be 50 microns or more. If the separation is too small then there will be a significant risk of a cooling element body 26, 27 coming into contact with a substrate W. This is undesirable because it may cause damage to the lithographic apparatus.
  • a separation of 20 microns may be sufficient to reduce the risk of contact to a reasonable level.
  • a separation of 50 microns may be sufficient to substantially eliminate the risk of contact.
  • the separation may for example be up to 100 microns, and may for example be up to 200 microns.
  • a separation greater than 200 microns may be undesirable because it may allow too much gas to leak out from underneath the cooling element bodies 26, 27.
  • the cooling apparatus 20, the membrane 32 and the further membrane 38 define a volume 40.
  • a further gas flow system (not shown) is configured to provide a flow of a further gas through the volume 40 as shown by the arrow in the volume 40.
  • the volume 40 is isolated, e.g. the further gas cannot escape into the region 18.
  • the further gas flow system may be part of or separate to the gas flow system and/or the additional gas flow system.
  • Figure 6 is a cross section view taken along the line A-A’ shown in Figure 5.
  • Figure 6 shows the cooling apparatus 20 including further gas delivery conduits, an inlet gas delivery conduit 42 to supply the further gas to the volume 40 and an outlet gas delivery conduit 44 to return the further gas from the volume 40.
  • Arrows in the further gas delivery conduits 42, 44 show the flow direction of the further gas.
  • Each cooling element 22, 24 may comprise further gas delivery conduits.
  • embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine -readable medium, which may be read and executed by one or more processors.
  • a machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device).
  • a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g. carrier waves, infrared signals, digital signals, etc.), and others.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un appareil lithographique qui comprend : un système de projection conçu pour projeter un faisceau de rayonnement à motifs par l'intermédiaire d'un trajet de projection sur une zone d'exposition située sur un substrat maintenu sur une table de substrat qui peut être déplacée à l'intérieur d'une région située sous le système de projection ; et un appareil de refroidissement conçu pour refroidir le substrat grâce à un transfert de chaleur allant du substrat vers un élément de refroidissement positionné au-dessus du substrat et adjacent au trajet de projection, l'appareil de refroidissement comprenant un système de membrane positionné dans le trajet de projection de façon à séparer physiquement le système de projection de la région.
PCT/EP2019/063706 2018-07-05 2019-05-28 Appareil lithographique et appareil de refroidissement Ceased WO2020007533A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980045146.9A CN112384863B (zh) 2018-07-05 2019-05-28 光刻装置和冷却装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18182013.5 2018-07-05
EP18182013 2018-07-05

Publications (1)

Publication Number Publication Date
WO2020007533A1 true WO2020007533A1 (fr) 2020-01-09

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PCT/EP2019/063706 Ceased WO2020007533A1 (fr) 2018-07-05 2019-05-28 Appareil lithographique et appareil de refroidissement

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CN (1) CN112384863B (fr)
NL (1) NL2023213A (fr)
WO (1) WO2020007533A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025056249A1 (fr) * 2023-09-15 2025-03-20 Asml Netherlands B.V. Appareil lithographique et entonnoir de bouchon de gaz

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117008423A (zh) * 2022-04-29 2023-11-07 上海微电子装备（集团）股份有限公司 光学镜片散热装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0532968A1 (fr) * 1991-09-19 1993-03-24 Hitachi, Ltd. Appareil à rayons-X pour lithographie par projection
WO2002084406A1 (fr) * 2001-04-17 2002-10-24 Koninklijke Philips Electronics N.V. Structure d'interface transparente euv
US20070024982A1 (en) * 2005-06-14 2007-02-01 Carl Zeiss Smt Ag Imaging system for a microlithographic projection exposure system
US20120281193A1 (en) * 2011-04-11 2012-11-08 Asml Netherland B.V. Lithographic apparatus and method
WO2014020003A1 (fr) * 2012-08-03 2014-02-06 Asml Netherlands B.V. Appareil lithographique et procédé de fabrication d'un dispositif
WO2015074859A1 (fr) * 2013-11-25 2015-05-28 Asml Netherlands B.V. Appareil, dispositif et procédé de fabrication associé
WO2016001351A1 (fr) * 2014-07-04 2016-01-07 Asml Netherlands B.V. Membranes à utiliser dans un appareil lithographique et appareil lithographique comprenant une telle membrane
WO2018041599A1 (fr) 2016-09-02 2018-03-08 Asml Netherlands B.V. Appareil lithographique

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2008250A (en) * 2011-03-08 2012-09-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0532968A1 (fr) * 1991-09-19 1993-03-24 Hitachi, Ltd. Appareil à rayons-X pour lithographie par projection
WO2002084406A1 (fr) * 2001-04-17 2002-10-24 Koninklijke Philips Electronics N.V. Structure d'interface transparente euv
US20070024982A1 (en) * 2005-06-14 2007-02-01 Carl Zeiss Smt Ag Imaging system for a microlithographic projection exposure system
US20120281193A1 (en) * 2011-04-11 2012-11-08 Asml Netherland B.V. Lithographic apparatus and method
WO2014020003A1 (fr) * 2012-08-03 2014-02-06 Asml Netherlands B.V. Appareil lithographique et procédé de fabrication d'un dispositif
WO2015074859A1 (fr) * 2013-11-25 2015-05-28 Asml Netherlands B.V. Appareil, dispositif et procédé de fabrication associé
WO2016001351A1 (fr) * 2014-07-04 2016-01-07 Asml Netherlands B.V. Membranes à utiliser dans un appareil lithographique et appareil lithographique comprenant une telle membrane
WO2018041599A1 (fr) 2016-09-02 2018-03-08 Asml Netherlands B.V. Appareil lithographique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025056249A1 (fr) * 2023-09-15 2025-03-20 Asml Netherlands B.V. Appareil lithographique et entonnoir de bouchon de gaz

Also Published As

Publication number Publication date
CN112384863B (zh) 2024-12-24
CN112384863A (zh) 2021-02-19
NL2023213A (en) 2020-01-09

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