WO2020124871A1 - Dispositif de surveillance de fin de processus de gravure et procédé de surveillance de fin de processus de gravure - Google Patents

Dispositif de surveillance de fin de processus de gravure et procédé de surveillance de fin de processus de gravure Download PDF

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Publication number
WO2020124871A1
WO2020124871A1 PCT/CN2019/081606 CN2019081606W WO2020124871A1 WO 2020124871 A1 WO2020124871 A1 WO 2020124871A1 CN 2019081606 W CN2019081606 W CN 2019081606W WO 2020124871 A1 WO2020124871 A1 WO 2020124871A1
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WIPO (PCT)
Prior art keywords
incident light
metal layer
light
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2019/081606
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English (en)
Chinese (zh)
Inventor
梅园
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Publication of WO2020124871A1 publication Critical patent/WO2020124871A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the invention relates to the field of display technology, and in particular to an etching endpoint monitoring device and an etching endpoint monitoring method.
  • LCD liquid crystal displays
  • other flat display devices have been widely used in mobile phones, TVs, and individuals due to their advantages of high image quality, power saving, thin body, and wide range of applications.
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream in display devices.
  • liquid crystal display devices on the existing market are backlight type liquid crystal displays, which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal thin wires in the middle of the two glass substrates.
  • the liquid crystal molecules are controlled to change the direction by turning on or off, and the light of the backlight module is controlled. Refracted to produce a picture.
  • a liquid crystal display panel is composed of a color filter substrate (CF, Color Filter) and a thin film transistor substrate (TFT, Thin Film) Transistor), liquid crystal (LC, Liquid Crystal) and sealant frame (Sealant) sandwiched between the color film substrate and the thin film transistor substrate
  • the molding process generally includes: the front-end array (Array) process (film, yellow light, etching And film stripping), the middle cell process (the TFT substrate is bonded to the CF substrate) and the rear stage module assembly process (the driver IC is pressed to the printed circuit board).
  • the front-stage Array process is mainly to form a TFT substrate to facilitate the control of the movement of liquid crystal molecules;
  • the middle-stage Cell process is mainly to add liquid crystal between the TFT substrate and the CF substrate;
  • the rear-stage module assembly process is mainly to drive the IC pressing and printed circuit The integration of the board then drives the liquid crystal molecules to rotate and display images.
  • the purpose of the present invention is to provide an etching end point monitoring device, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
  • the object of the present invention is also to provide an etching end point monitoring method, which can quickly and effectively monitor the etching end point, promote the development of the etching process and improve the etching accuracy.
  • the present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflecting mirror and a color rendering plate;
  • the incident light source is used to emit incident light to the substrate to be etched
  • the reflector is located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering board;
  • the color rendering plate is located on the optical path of the second reflected light, and is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the intensity change of the light spot .
  • the substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
  • the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  • the substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
  • the light spot is weak first, then strong, and then weak on the color rendering board.
  • the light spot is etched from weak to strong, which is the end point of the etching of the second metal layer, and the light spot is changed from strong to weak Is the end point of the etching of the first metal layer.
  • the etching end point monitoring device further includes: a convex lens located on the optical path of the second reflected light, the convex lens is used to focus the second reflected light, and the color developing plate is located at the focal point of the convex lens.
  • the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
  • the invention also provides an etching endpoint monitoring method, including:
  • Step S1 Provide an etching end point monitoring device, including an incident light source, a reflecting mirror and a color rendering plate;
  • Step S2 providing a substrate to be etched, and etching the substrate to be etched, and the incident light source emits incident light toward the substrate to be etched;
  • Step S3 Set the mirror on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light to reflect the first reflected light and generate second reflected light to irradiate the color On board
  • Step S4 The color rendering plate displays a light spot generated by the second reflected light, and monitors the etching end point of the substrate to be etched according to the strength change of the light spot.
  • the substrate to be etched includes: a base substrate and a first metal layer on the base substrate;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the first metal layer, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate , More than 65% of incident light passes through the base substrate through refraction;
  • the light spot is strong first and then weak on the color rendering plate, and the moment when the light spot changes from strong to weak is the etching end point of the first metal layer.
  • the substrate to be etched includes: a base substrate, a first metal layer on the base substrate, and a second metal layer on the first metal layer;
  • the incident light emitted by the incident light source has the following characteristics: when the incident light is irradiated to the second metal layer, more than 65% of the incident light is absorbed by the second metal layer; the incident light is irradiated to the first metal layer At this time, more than 65% of the incident light is reflected by the first metal layer; when the incident light is irradiated to the base substrate, more than 65% of the incident light is refracted through the base substrate;
  • the light spot is weak first, then strong, and then weak on the color rendering board.
  • the light spot is etched from weak to strong, which is the end point of the etching of the second metal layer.
  • the moment when it becomes weak is the end point of the etching of the first metal layer.
  • the etching end point monitoring device provided in the step S1 further includes: a convex lens;
  • the second reflected light in step S3 needs to be focused by the convex lens before being irradiated to the color rendering board;
  • the color rendering plate is located at the focal point of the convex lens to display the light spot generated by the focused second reflected light.
  • the incident light emitted by the incident light source is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching endpoint monitoring device, which includes: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; The substrate to be etched reflects the first reflected light generated by the incident light on the optical path for reflecting the first reflected light and generating second reflected light to irradiate the color rendering board; the color rendering board is located at the The optical path of the second reflected light is used to display the light spot generated by the second reflected light.
  • the difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel in different
  • the etching stage has different strong and weak states, so that the etching end point can be quickly and effectively monitored according to the strength change of the light spot, which promotes the development of the etching process and the improvement of the etching accuracy.
  • the invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.
  • FIGS. 1 to 2 are schematic diagrams of a first embodiment of an etching endpoint monitoring device of the present invention
  • 3 to 5 are schematic diagrams of the second embodiment of the etching endpoint monitoring device of the present invention.
  • FIG. 6 is a schematic diagram of a third embodiment of an etching endpoint monitoring device of the present invention.
  • FIG. 7 is a flowchart of an etching end point monitoring method of the present invention.
  • the present invention provides an etching endpoint monitoring device, which is characterized by comprising: an incident light source 1 ,Reflector 2 And color plate 3 ;
  • the incident light source 1 Used to emit incident light to the substrate to be etched;
  • the mirror 2 Located on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, is used to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board;
  • the color rendering board 3 Located on the optical path of the second reflected light, it is used to display the light spot generated by the second reflected light, so as to monitor the etching end point of the substrate to be etched according to the change of the intensity of the light spot.
  • the substrate to be etched includes: a base substrate 11 And located on the base substrate 11 First metal layer 12 .
  • the base substrate 11 Is a glass substrate
  • the first metal layer 12 The material can be selected from various metals in the third to seventh periods of the periodic table.
  • the spot on the light can change with the substrate in different etching stages.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate 11 Time, 65% The above incident light passes through the base substrate through refraction 11 .
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 12
  • obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 2 After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 3
  • the color rendering board 3 There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 2
  • the incident light irradiates the base substrate 11
  • the color rendering plate 3 Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 3
  • the moment when the light spot on the surface becomes weak or even disappears is the first metal layer 12
  • the etching end point that is, during etching, the light spot is strong
  • the substrate to be etched includes: a base substrate 11 , Located on the base substrate 11 First metal layer 12 And located in the first metal layer 12 Second metal layer 13 .
  • the base substrate 11 Is a glass substrate, the first metal layer 12 And the second metal layer 13
  • the material can be selected from various metals in the third to seventh periods of the periodic table.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 13 When on, most of the incident light is caused by the second metal layer 13 Absorbed, almost no reflected light, in detail, the incident light source 1 The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 13 Time, 65% The above incident light is affected by the second metal layer 13 Absorbed; the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate
  • the range of the spectral line of the incident light and the first metal layer can be set 12
  • the intersection of the inverse spectral lines belongs to the first metal layer 12 A subset of the inverse spectral lines of 13 There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 13 Absorbed and absorbed by the first metal layer 12 Reflective characteristics.
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 13 Most of the light is absorbed and almost no reflected light is produced.
  • the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched.
  • the position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings.
  • the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
  • the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ⁇ 1cm ,
  • the incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 2 After reflection, three second reflected lights are generated.
  • a convex lens is also added 4 ,
  • the convex lens 4 Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 3
  • the convex lens 4 On the focus, thus making the color rendering board 3 There is still one spot on the top, which ensures that the spot can still be effectively observed.
  • the second reflected light is perpendicular to the color rendering plate 3
  • the incident light source 1 The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching endpoint monitoring method, including:
  • step S1 Provide an etching endpoint monitoring device, including incident light source 1 ,Reflector 2 And color plate 3 ;
  • step S2 Providing a substrate to be etched, and etching the substrate to be etched, and at the same time the incident light source 1 Emit incident light to the substrate to be etched;
  • step S3 The mirror 2 It is arranged on the optical path where the substrate to be etched reflects the first reflected light generated by the incident light, to reflect the first reflected light, and generate second reflected light to irradiate the color rendering board 3 on;
  • step S4 The color rendering board 3 A light spot generated by the second reflected light is displayed, and the etching end point of the substrate to be etched is monitored according to the strength change of the light spot.
  • the substrate to be etched includes: a base substrate 11 And located on the base substrate 11 First metal layer 12 .
  • the base substrate 11 Is a glass substrate
  • the first metal layer 12 The material can be selected from various metals in the third to seventh periods of the periodic table.
  • the spot on the light can change with the substrate in different etching stages.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, in detail, that is, the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate 11 Time, 65% The above incident light passes through the base substrate through refraction 11 .
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the first metal layer 12
  • obvious first reflected light is generated, and the first reflected light passes through the reflecting plate 2 After reflection, a second reflected light is generated, and the second reflected light irradiates the color rendering plate 3
  • the color rendering board 3 There is an obvious light spot on the surface, as the etching progresses, as shown in the figure 2
  • the incident light irradiates the base substrate 11
  • the color rendering plate 3 Is the obvious light spot also obviously weakened or even disappeared, the color rendering board 3
  • the moment when the light spot on the surface becomes weak or even disappears is the first metal layer 12
  • the etching end point that is, during etching, the light spot is strong
  • the substrate to be etched includes: a base substrate 11 , Located on the base substrate 11 First metal layer 12 And located in the first metal layer 12 Second metal layer 13 .
  • the base substrate 11 Is a glass substrate, the first metal layer 12 And the second metal layer 13
  • the material can be selected from various metals in the third to seventh periods of the periodic table.
  • the incident light source 1 The incident light emitted to the substrate to be etched needs to satisfy the following conditions, when the incident light irradiates the first metal layer 12 When on, it can produce obvious reflected light, when the incident light irradiates the base substrate 11 Most light passes through the base substrate after being refracted 11 , Only weak reflected light or even no reflected light, when the incident light irradiates the second metal layer 13 When on, most of the incident light is caused by the second metal layer 13 Absorbed, almost no reflected light, in detail, the incident light source 1 The incident light emitted has the following characteristics: the incident light irradiates the second metal layer 13 Time, 65% The above incident light is affected by the second metal layer 13 Absorbed; the incident light irradiates the first metal layer 12 Time, 65% The above incident light is taken by the first metal layer 12 Reflected; the incident light irradiates the base substrate
  • the range of the spectral line of the incident light and the first metal layer can be set 12
  • the intersection of the inverse spectral lines belongs to the first metal layer 12 A subset of the inverse spectral lines of 13 There is no intersection of the inverted color spectral lines to achieve that the incident light is captured by the second metal layer 13 Absorbed and absorbed by the first metal layer 12 Reflective characteristics.
  • the incident light source 1 Incident light emitted to the substrate to be etched, the incident light irradiating the second metal layer 13 Most of the light is absorbed and almost no reflected light is produced.
  • the substrate to be etched is placed horizontally, and the incident light is irradiated onto the substrate to be etched from above the substrate to be etched.
  • the position of the etched substrate will not move, the incident light irradiating the substrate to be etched is also relatively fixed, and the optical path of the reflected light generated is also relatively fixed, but during the beaker test, the substrate to be etched is held vertically and held Test in the beaker. At this time, the substrate to be etched may have swings.
  • the incident light irradiates the substrate to be etched, multiple reflection points may be generated and multiple reflected lights may be generated, such as the third invention. Examples.
  • the substrate to be etched is placed vertically into a beaker for testing, and the substrate to be etched has a swing with a swing amplitude of ⁇ 1cm ,
  • the incident light generates three first reflected lights at three swing positions, and the three first reflected lights pass through the reflective sheet 2 After reflection, three second reflected lights are generated.
  • a convex lens is also added 4 ,
  • the convex lens 4 Disposed on the optical path of the three second reflected lights, for focusing the three second reflected lights, and at the same time the color rendering plate 3
  • the convex lens 4 On the focus, thus making the color rendering board 3 There is still one spot on the top, which ensures that the spot can still be effectively observed.
  • the second reflected light is perpendicular to the color rendering plate 3
  • the incident light source 1 The incident light emitted is a monochromatic laser or light processed by selective filtering technology.
  • the present invention provides an etching end point monitoring device, including: an incident light source, a reflector and a color rendering plate; the incident light source is used to emit incident light to the substrate to be etched; the reflector is located by the The substrate to be etched reflects the first reflected light on the optical path generated by the incident light, and is used to reflect the first reflected light and generate second reflected light to irradiate the color rendering plate; the color rendering plate is located on the first The optical path of the second reflected light is used to display the light spot generated by the second reflected light.
  • the difference in the reflection characteristics of the incident light by different film layers on the substrate to be etched makes the light spot of the display panel etched in different ways
  • the stages have different strength states, so that the etching end point can be monitored quickly and effectively according to the strength changes of the light spot, so as to promote the development of the etching process and the improvement of the etching accuracy.
  • the invention also provides an etching endpoint monitoring method, which can quickly and effectively monitor the etching endpoint, promote the development of the etching process and improve the etching accuracy.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

La présente invention concerne un dispositif de surveillance de fin de processus de gravure et un procédé de surveillance de fin de processus de gravure. Le dispositif de surveillance de fin de processus de gravure comprend : une source de lumière incidente, un miroir et une plaque chromogène. La source de lumière incidente est utilisée pour transmettre une lumière incidente à un substrat à graver. Le miroir est disposé sur le trajet de lumière d'une première lumière réfléchie produite par ledit substrat réfléchissant la lumière incidente et est utilisé pour réfléchir la première lumière réfléchie et générer une seconde lumière réfléchie devant être projetée sur la plaque chromogène. La plaque chromogène est disposée sur le trajet de lumière de la seconde lumière réfléchie et est utilisée pour afficher un point lumineux produit par la seconde lumière réfléchie. En utilisant différentes caractéristiques de différentes couches de film sur ledit substrat pour réfléchir la lumière incidente, un point lumineux d'un panneau d'affichage comprend plusieurs différents états de résistance pendant différentes phases de gravure, ce qui permet une surveillance rapide et efficace de fin de processus gravure sur la base de changements de la résistance du point lumineux, et de promouvoir le développement d'un processus de gravure et d'augmenter la précision de gravure.
PCT/CN2019/081606 2018-12-21 2019-04-04 Dispositif de surveillance de fin de processus de gravure et procédé de surveillance de fin de processus de gravure Ceased WO2020124871A1 (fr)

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CN201811575330.8 2018-12-21
CN201811575330.8A CN109659249A (zh) 2018-12-21 2018-12-21 蚀刻终点监控装置及蚀刻终点监控方法

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CN111098036A (zh) * 2019-12-31 2020-05-05 北京赛腾标识系统股份公司 一种赋码方法及系统

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CN105575846A (zh) * 2016-03-15 2016-05-11 武汉华星光电技术有限公司 一种金属湿式蚀刻终点的监控方法及其装置

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JPH0990330A (ja) * 1995-09-20 1997-04-04 Advanced Display:Kk 液晶表示装置の製法
CN102856230B (zh) * 2012-10-09 2015-02-04 深圳市华星光电技术有限公司 Tft基板接触孔蚀刻制程监控方法
CN107993946B (zh) * 2016-10-27 2020-11-20 中微半导体设备(上海)股份有限公司 宽带光谱光学测量装置及等离子体处理装置

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Publication number Priority date Publication date Assignee Title
CN101261449A (zh) * 2007-03-06 2008-09-10 中国科学技术大学 光栅离子束刻蚀的光学在线检测装置及检测方法
CN105575846A (zh) * 2016-03-15 2016-05-11 武汉华星光电技术有限公司 一种金属湿式蚀刻终点的监控方法及其装置

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