WO2020172688A3 - Détecteur d'intensité de signaux - Google Patents

Détecteur d'intensité de signaux Download PDF

Info

Publication number
WO2020172688A3
WO2020172688A3 PCT/US2020/026147 US2020026147W WO2020172688A3 WO 2020172688 A3 WO2020172688 A3 WO 2020172688A3 US 2020026147 W US2020026147 W US 2020026147W WO 2020172688 A3 WO2020172688 A3 WO 2020172688A3
Authority
WO
WIPO (PCT)
Prior art keywords
differential
output
stage
input
signal strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2020/026147
Other languages
English (en)
Other versions
WO2020172688A2 (fr
Inventor
Jie Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FutureWei Technologies Inc
Original Assignee
FutureWei Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FutureWei Technologies Inc filed Critical FutureWei Technologies Inc
Priority to CN202080097753.2A priority Critical patent/CN115211032A/zh
Publication of WO2020172688A2 publication Critical patent/WO2020172688A2/fr
Publication of WO2020172688A3 publication Critical patent/WO2020172688A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/01—Arrangements for measuring electric power or power factor in circuits having distributed constants
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45542—Indexing scheme relating to differential amplifiers the IC comprising bias stabilisation means, e.g. DC level stabilisation, and temperature coefficient dependent control, e.g. by DC level shifting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45628—Indexing scheme relating to differential amplifiers the LC comprising bias stabilisation means, e.g. DC level stabilisation means, and temperature coefficient dependent control, e.g. DC level shifting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
  • Transmitters (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne une technologie pour détecter l'intensité de signaux. L'invention concerne un appareil de détection de l'intensité de signaux. L'appareil comprend un étage de capteur différentiel ayant une entrée et une sortie, un étage de référence différentiel ayant une entrée et une sortie, un étage de condensateur configuré pour coupler un signal d'entrée à l'entrée de l'étage de capteur différentiel, un circuit de polarisation configuré pour polariser l'étage de capteur différentiel et l'étage de référence différentiel. L'appareil a une sortie différentielle entre la sortie de l'étage de capteur différentiel et la sortie de l'étage de référence différentiel. La sortie différentielle est configurée pour fournir un signal indicatif de l'intensité du signal d'entrée.
PCT/US2020/026147 2020-03-04 2020-04-01 Détecteur d'intensité de signaux Ceased WO2020172688A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080097753.2A CN115211032A (zh) 2020-03-04 2020-04-01 信号强度检测器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062985197P 2020-03-04 2020-03-04
US62/985,197 2020-03-04

Publications (2)

Publication Number Publication Date
WO2020172688A2 WO2020172688A2 (fr) 2020-08-27
WO2020172688A3 true WO2020172688A3 (fr) 2020-12-17

Family

ID=70457120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2020/026147 Ceased WO2020172688A2 (fr) 2020-03-04 2020-04-01 Détecteur d'intensité de signaux

Country Status (2)

Country Link
CN (1) CN115211032A (fr)
WO (1) WO2020172688A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1556968A2 (fr) * 2002-10-30 2005-07-27 Advanced Micro Devices, Inc. Detecteur de niveau de signal rf integre applicable a la commande de niveau de puissance automatique
US20120083205A1 (en) * 2010-10-04 2012-04-05 Qualcomm Incorporated Nfc device having a differential input envelope detector

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101666833B (zh) * 2009-09-28 2012-08-15 王树甫 Cmos差分射频信号幅度检测电路
US10627430B2 (en) * 2016-05-24 2020-04-21 Texas Instruments Incorporated Fast current-based envelope detector
US10230336B2 (en) * 2016-11-22 2019-03-12 Infineon Technologies Ag RF power detector circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1556968A2 (fr) * 2002-10-30 2005-07-27 Advanced Micro Devices, Inc. Detecteur de niveau de signal rf integre applicable a la commande de niveau de puissance automatique
US20120083205A1 (en) * 2010-10-04 2012-04-05 Qualcomm Incorporated Nfc device having a differential input envelope detector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A. VOUILLOZ ET AL: "A low-power CMOS super-regenerative receiver at 1 GHz", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 36, no. 3, 1 March 2001 (2001-03-01), USA, pages 440 - 451, XP055743230, ISSN: 0018-9200, DOI: 10.1109/4.910483 *

Also Published As

Publication number Publication date
WO2020172688A2 (fr) 2020-08-27
CN115211032A (zh) 2022-10-18

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