WO2023074152A1 - Film de base pour bande de fabrication de semi-conducteur - Google Patents

Film de base pour bande de fabrication de semi-conducteur Download PDF

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Publication number
WO2023074152A1
WO2023074152A1 PCT/JP2022/034036 JP2022034036W WO2023074152A1 WO 2023074152 A1 WO2023074152 A1 WO 2023074152A1 JP 2022034036 W JP2022034036 W JP 2022034036W WO 2023074152 A1 WO2023074152 A1 WO 2023074152A1
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Prior art keywords
base film
stress
elongation
density polyethylene
low
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Ceased
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PCT/JP2022/034036
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English (en)
Japanese (ja)
Inventor
享之 石本
陽介 味口
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CI Takiron Corp
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CI Takiron Corp
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Priority to KR1020247016851A priority Critical patent/KR20240090688A/ko
Priority to CN202280069948.5A priority patent/CN118103953A/zh
Publication of WO2023074152A1 publication Critical patent/WO2023074152A1/fr
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/06—Polyethylene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/18—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms
    • C08L23/20—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms having four to nine carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/18—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms
    • C08L23/20—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms having four to nine carbon atoms
    • C08L23/22—Copolymers of isobutene; Butyl rubber; Homopolymers or copolymers of other iso-olefins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/18—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms
    • C08J2323/20—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms having four to nine carbon atoms
    • C08J2323/22—Copolymers of isobutene; butyl rubber
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/04—Homopolymers or copolymers of ethene
    • C08J2423/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/18—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms
    • C08J2423/20—Homopolymers or copolymers of hydrocarbons having four or more carbon atoms having four to nine carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/16—Applications used for films
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2207/00—Properties characterising the ingredient of the composition
    • C08L2207/06—Properties of polyethylene
    • C08L2207/066—LDPE (radical process)

Definitions

  • the present invention relates to a base film for semiconductor manufacturing tapes (hereinafter sometimes simply referred to as "base film”).
  • a wafer circuit in which a circuit is formed on a substantially disk-shaped semiconductor wafer is divided by dicing on a semiconductor manufacturing tape for wafers (dicing tape), and then divided into individual pieces.
  • dicing tape is widely used to obtain semiconductor devices of After dicing, for example, the dicing tape is stretched to form a gap between the semiconductor devices (that is, expanded), and then each semiconductor device is picked up by a robot or the like.
  • a dicing die attach film in which an adhesive layer is laminated on the adhesive layer of the dicing tape described above is used, and a wafer circuit is diced on the dicing die attach film. After splitting, the dicing die attach film is stretched to form a gap between the semiconductor devices, then the adhesive layer is photo-cured, and the semiconductor devices are peeled off from the adhesive layer and picked up while the adhesive layer is attached. be.
  • Dicing tapes and dicing die attach films are generally composed of an adhesive layer for fixing a wafer and a base film containing polyolefin or the like.
  • the base film contains propylene and/or 1-butene components.
  • a random copolymer of propylene and ethylene and/or an ⁇ -olefin having 4 to 8 carbon atoms wherein the content of ethylene and/or ⁇ -olefin having 4 to 8 carbon atoms is 6% by weight or more
  • the content of ethylene and / or ⁇ -olefin having 4 to 8 carbon atoms is less than that of the surface layer and the surface layer is composed of a high density propylene-based random copolymer ( ⁇ ) as a main component.
  • a substrate film has been proposed (see, for example, Patent Document 3).
  • JP-A-11-323273 Japanese Patent Application Laid-Open No. 2001-232683 JP 2018-65327 A
  • an object of the present invention is to provide a base film for a semiconductor manufacturing tape that is excellent in uniform stretchability, rigidity and processing stability.
  • a base film for a semiconductor manufacturing tape that is excellent in uniform extensibility, rigidity, and processing stability.
  • FIG. 5 is an MD SS curve (stress-strain curve) of the base film of Example 1.
  • FIG. 1 is an SS curve (stress-strain curve) of TD in the base film of Example 1.
  • the base film for semiconductor manufacturing tape of the present invention will be specifically described below.
  • the present invention is not limited to the following embodiments, and can be appropriately modified and applied without changing the gist of the present invention.
  • the base film of the present invention is a film formed of a polyolefin resin and contains a 1-butene homopolymer and a low-density polyethylene having a density of 0.93 g/cm 3 or less.
  • ⁇ Homopolymer of 1-butene> a homopolymer obtained by polymerizing 1-butene alone is used as polybutene.
  • This homopolymer of 1-butene has a high molecular weight and a bulky side chain. As in the case of , the uniform elongation of the base film can be improved.
  • the 1-butene homopolymer used in this embodiment can have a weight average molecular weight (Mw) of about 500,000 to 1,500,000.
  • the "weight-average molecular weight” mentioned above is calculated according to JIS K 7252-1:2016.
  • the 1-butene homopolymer used in the present invention has a high molecular weight, it has low surface tackiness and can be used as a surface layer. In the manufacturing process of the base film, it is possible to provide a base film having high rigidity that allows the base to be unwound.
  • the homopolymer of 1-butene used in the present invention has a high molecular weight, it can be molded with a general-purpose extruder. Adhesion to the transport roll when transporting the film can be suppressed, blocking when winding the base film, and draw resonance when forming the base film can be suppressed. The processing stability of the material film can be improved.
  • the density of low-density polyethylene is 0.930 g/cm 3 or less.
  • the density of the low-density polyethylene is 0.930 g/cm 3 or less, an excessive increase in crystallinity is suppressed and the flexibility is improved, so that the isotropy of the base film can be improved.
  • the density of the low-density polyethylene is higher than 0.930 g/cm 3 , the degree of crystallinity increases excessively, which may reduce the isotropy. The pick-up property of the device may deteriorate, and the semiconductor device may be damaged.
  • the density of the low-density polyethylene is preferably 0.860 g/cm 3 or more, more preferably 0.880 g/cm 3 or more.
  • linear low-density polyethylene has side chain branches in the linear structure of high-density polyethylene, the degree of crystallinity does not become too high compared to high-density polyethylene, and it has excellent flexibility.
  • linear low-density polyethylene produced using a metallocene catalyst or a Ziegler catalyst may be used.
  • melt mass flow rate (MFR) of linear low-density polyethylene is preferably 0.5 to 7.5 g/10 minutes, more preferably 1.0 to 6.0 g/10 minutes, and 2.0 ⁇ 5.0 g/10 minutes is more preferred.
  • MFR melt mass flow rate
  • the melt mass flow rate (MFR) of the linear low-density polyethylene is 0.5 g/10 minutes or more, the molecular weight is not too large, and flexibility and workability can be improved. This is because when the melt mass flow rate (MFR) of the density polyethylene is 7.5 g/10 minutes or less, the molecular weight is not too small and the processing stability can be improved.
  • the above melt mass flow rate can be obtained by measuring in accordance with JIS K7210:1999.
  • the flexibility and isotropy of the base film can be improved.
  • the ratio of stress (at 40% elongation) to stress (at 20% elongation) in the direction perpendicular to (hereinafter referred to as "TD") i.e., the elongation rate of the base film
  • TD machine axis (longitudinal) direction
  • the ratio of stress (at 40% elongation) to stress (at 20% elongation) in the direction perpendicular to (hereinafter referred to as "TD") i.e., the elongation rate of the base film
  • the elongation rate of the base film is 1 or more and 2 or less is preferred, 1.05 to 1.8 is more preferred, and 1.1 to 1.7 is even more preferred.
  • the elongation rate of the base film is greater than 2, it may become difficult to hold the expanding ring due to excessive stress increase, and if the elongation rate of the base film is less than 1,
  • the stress in MD and TD (at 25% elongation) is preferably 5 MPa or more and 20 MPa or less, more preferably 6 MPa or more and 15 MPa or less, and even more preferably 7 MPa or more and 13 MPa or less. If the stress in MD and TD is greater than 20 MPa, the rigidity becomes too large, and the pick-up property of the semiconductor device may deteriorate and the semiconductor device may be damaged. If the stress in MD and TD is less than 5 MPa. Since the rigidity is low, unwinding of the substrate becomes difficult in the production process of the substrate film, and the coatability of the pressure-sensitive adhesive may deteriorate.
  • the ratio of the stress in MD (at 25% elongation) to the stress in TD (at 25% elongation) is preferably 0.8 or more and 1.3 or less, more preferably 0.85 or more and 1.15 or less, and even more preferably 0.9 or more and 1.1 or less.
  • stress refers to stress measured in accordance with JIS K7161-2:2014.
  • the thickness of the base film is preferably 50-300 ⁇ m, more preferably 80-150 ⁇ m. If the thickness of the base film is 50 ⁇ m or more, the handleability can be improved, and if the thickness of the base film is 300 ⁇ m or less, the flexibility (expandability) can be improved. In the case of a substrate film for wafers, the thickness of the substrate film is preferably 50-150 ⁇ m, more preferably 70-100 ⁇ m.
  • the base film of the present invention is produced by using a resin material containing the above-mentioned 1-butene homopolymer and low-density polyethylene having a density of 0.93 g/cm 3 or less, for example, using an extruder equipped with a T-die. is manufactured by extruding and molding the resin material at a predetermined temperature.
  • the base film of the present invention may contain various additives.
  • additives known additives that are commonly used in semiconductor manufacturing tapes can be used. coloring agents and the like.
  • these additives may be used individually by 1 type, and may use 2 or more types together.
  • the cross-linking aid examples include triallyl isocyanurate and the like.
  • the content of the cross-linking aid in the base film is It is preferably 0.05 to 5 parts by mass, more preferably 1 to 3 parts by mass, based on 100 parts by mass of the resin.
  • LLDPE-1 linear low density polyethylene, melting point: 120° C., density: 0.913 g/cm 3 , MFR: 2.0 g/10 min
  • LLDPE-2 linear low density polyethylene, Melting point: 108°C, density: 0.921 g/cm 3 , MFR: 2.5 g/10 min
  • LLDPE-3 linear low density polyethylene, melting point: 93°C, density: 0.903 g/cm 3 , MFR: 2.0 g/10 min
  • LLDPE-4 linear low density polyethylene, melting point: 124° C., density: 0.936 g/cm 3 , MFR: 2.0 g/10 min
  • LLDPE-5 Linear low-density polyethylene, density: 0.923 g/cm 3 , MFR: 0.5 g/10 min (manufactured by Primpolymer, trade name: ULTZEX (registered trademark) 2005HC)
  • Example 1 ⁇ Preparation of base film> First, each material shown in Table 1 was blended to prepare a resin material of Example 1 having the composition (parts by mass) shown in Table 1. Next, this resin material is extruded with a T-die using a three-kind three-layer co-extruder under the conditions of a die temperature of 180 to 200 ° C. and a chill roll temperature of 40 ° C., thereby having the thickness shown in Table 1. A base film was obtained.
  • the MD and TD SS curves (stress-strain curves) of the base film of this example are shown in FIGS. As shown in FIGS. 1 and 2, in the MD and TD SS curves (stress-strain curves), it can be seen that there is no yield point during elongation from 0% to 100%. .
  • ⁇ Measurement of stress in MD and TD> Using the produced base film, a sample for measurement was obtained in accordance with JIS K7161-2:2014. Next, the obtained measurement sample is set in a tensile tester (manufactured by Shimadzu Corporation, product name: AG-5000A) so that the distance between the grips is 40 mm, and is set in accordance with JIS K7161-2: 2014. , a temperature of 23° C. and a relative humidity of 40%, and a tensile test was performed at a tensile speed of 300 mm/min.
  • a tensile tester manufactured by Shimadzu Corporation, product name: AG-5000A
  • the stress at 20% elongation (20% stress) and the stress at 40% elongation (40% stress) were measured, and the stress in MD (20%
  • the ratio of stress (at 40% elongation) to stress (at 40% elongation) in MD i.e., the elongation of the substrate film in MD
  • the ratio of stress (at 40% elongation) to stress (at 20% elongation) in TD was calculated. Table 1 shows the above results.
  • Processing stability was evaluated using the produced base film. More specifically, it is possible to suppress adhesion to the transport roll when transporting the base film, blocking when winding the base film, and draw resonance when forming the base film. The case where it is possible to prevent thickness fluctuation due to The case where the transport and winding of the substrate film was difficult, or the case where the variation in thickness due to draw resonance during molding of the substrate film was large was evaluated as x (poor processing stability of the substrate film). Table 1 shows the above results.
  • Examples 2-9, Comparative Examples 1-3 A base film having a thickness shown in Tables 1 and 2 was produced in the same manner as in Example 1 above, except that the composition of the resin component was changed to the composition (parts by mass) shown in Tables 1 and 2.
  • each material shown in Table 3 was blended to prepare a resin material for forming a surface layer and a resin material for forming an intermediate layer having the composition (parts by weight) shown in Table 3.
  • the resin material for forming the surface layer and the resin material for forming the intermediate layer are simultaneously extruded under conditions of 180 to 200°C and a chill roll temperature of 40°C.
  • the substrate has the thickness shown in Table 3 (that is, the ratio of the intermediate layer to the entire substrate film is 80%) and has a three-layer structure in which the surface layer/intermediate layer/surface layer are laminated in this order. A material film was obtained.
  • a 1-butene homopolymer and a low-density polyethylene having a density of 0.93 g/cm 3 or less are included, and the mass ratio of the 1-butene homopolymer to the low-density polyethylene is 1-
  • the density of the low-density polyethylene is greater than 0.93 g/cm 3 (0.936 g/cm 3 ), so the yield point is confirmed.
  • the ratio of stress (at 40% elongation) to stress (at 20% elongation) is less than 1, indicating poor uniform elongation.
  • the base film of Comparative Example 5 did not contain a 1-butene homopolymer, and the stress in TD (at 25% elongation) was less than 5 MPa. In the manufacturing process of the base film, unwinding of the base material becomes unstable and the rigidity is poor.
  • the base film of Comparative Example 6 did not contain a 1-butene homopolymer, and in MD and TD, the stress (40% Since the ratio of (during elongation) is less than 1, the yield point is confirmed and it can be seen that the uniform elongation is poor.
  • the stress in MD and TD (at 25% elongation) is less than 5 MPa, unwinding of the substrate becomes unstable in the manufacturing process of the substrate film, and the stiffness is poor.
  • the surface of the film is highly tacky, the base film sticks to the transport roll when the base film is transported, making it difficult to transport and wind the base film, resulting in poor processing stability. I understand.
  • the present invention is suitable for a base film for semiconductor manufacturing tapes.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Dicing (AREA)

Abstract

La présente invention concerne un film de base pour une bande de fabrication de semi-conducteur qui contient un homopolymère de 1-butène et un polyéthylène basse densité présentant une masse volumique d'au plus 0,93 g/cm3, le rapport de masse de l'homopolymère de 1-butène par rapport au polyéthylène basse densité ([homopolymère de 1-butène]/[polyéthylène basse densité]) est de 10/90 à 70/30.
PCT/JP2022/034036 2021-10-29 2022-09-12 Film de base pour bande de fabrication de semi-conducteur Ceased WO2023074152A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020247016851A KR20240090688A (ko) 2021-10-29 2022-09-12 반도체 제조 테이프용 기재 필름
CN202280069948.5A CN118103953A (zh) 2021-10-29 2022-09-12 半导体制造胶带用基材薄膜

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Application Number Priority Date Filing Date Title
JP2021-177259 2021-10-29
JP2021177259A JP7682765B2 (ja) 2021-10-29 2021-10-29 半導体製造テープ用基材フィルム

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KR (1) KR20240090688A (fr)
CN (1) CN118103953A (fr)
TW (1) TW202330661A (fr)
WO (1) WO2023074152A1 (fr)

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WO2017170436A1 (fr) * 2016-03-31 2017-10-05 古河電気工業株式会社 Feuille adhésive pour traitement de semi-conducteurs
JP2019091903A (ja) * 2014-03-17 2019-06-13 リンテック株式会社 ダイシングシートおよび当該ダイシングシートを用いるチップの製造方法
WO2020031928A1 (fr) * 2018-08-08 2020-02-13 三井・ダウポリケミカル株式会社 Composition de résine pour substrat de film de découpage en dés, substrat de film de découpage en dés et film de découpage en dés

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JPH11323273A (ja) 1998-05-12 1999-11-26 Nitto Denko Corp 粘着シート
JP2001232683A (ja) 2000-02-23 2001-08-28 Gunze Ltd 均一拡張性と滑性に優れるポリオレフィン系フィルム
JP2004338289A (ja) * 2003-05-16 2004-12-02 Sekisui Film Kk 粘着テープ用基材および粘着シート
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