WO2023213346A1 - Module semi-conducteur de puissance à connexion enfichable - Google Patents
Module semi-conducteur de puissance à connexion enfichable Download PDFInfo
- Publication number
- WO2023213346A1 WO2023213346A1 PCT/DE2023/100285 DE2023100285W WO2023213346A1 WO 2023213346 A1 WO2023213346 A1 WO 2023213346A1 DE 2023100285 W DE2023100285 W DE 2023100285W WO 2023213346 A1 WO2023213346 A1 WO 2023213346A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- connection
- power
- power semiconductor
- semiconductor module
- plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/0204—Mounting supporting structures on the outside of casings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/10—Sockets for co-operation with pins or blades
- H01R13/11—Resilient sockets
- H01R13/113—Resilient sockets co-operating with pins or blades having a rectangular transverse section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/15—Pins, blades or sockets having separate spring member for producing or increasing contact pressure
- H01R13/187—Pins, blades or sockets having separate spring member for producing or increasing contact pressure with spring member in the socket
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/0247—Electrical details of casings, e.g. terminals, passages for cables or wiring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/15—Containers comprising an insulating or insulated base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
Definitions
- the invention relates to a power semiconductor module with a plug connection.
- the power semiconductor module with plug connector provides an integrated current transformer that can be easily connected to an electric motor via the integrated plug connection.
- the power semiconductor module with a plug connection comprises a structurally simple group, the circuit arrangement of which includes semiconductor components with power semiconductors in modular design, integrated current transformers, for example Hall sensors, power contacts on the semiconductor component, for example sheet metal-shaped load contacts and axially guided plug connectors, for example with contact lamella. Due to the very compact design, a variety of spatial arrangements can be provided, preferably on rotationally symmetrical systems, e.g. on an integrated vehicle drive inverter on an electric machine winding head.
- the respective power semiconductor modules with plug-in connections in such a system are easy to connect and replace, and are easy to maintain and test.
- the inventive power semiconductor module with a plug-in connection fulfills all important criteria and wishes for the usability of a power semiconductor module through the type of construction with an integrated, multifunctional plug-in connection for good heat dissipation, the required insulation voltage and partial discharge resistance, the temperature and load change resistance internal connections, the low-inductance, statically and dynamically symmetrical and EMC-compliant internal structure, the defined, harmless behavior in the event of a module defect, the uncomplicated assembly and connection technology as well as the cost-effective, environmentally friendly production and recyclability after the end of the service life.
- the prior art shows a series of devices for power semiconductor modules with plug connections or devices for high-current interfaces.
- US 7,717,747 B2 shows a vehicle inverter connection arrangement.
- the assembly includes a housing having a plurality of engagement formations on the housing shaped to mate with a plurality of inverter engagement formations on a vehicle inverter and a plurality of further engagement formations on the housing shaped to mate with a plurality of engine engagement formations on a vehicle engine. Further shown are multiple current sensors connected to the housing that are configured to sense current flowing between the vehicle inverter and the vehicle motor.
- the US 2014/035605 A1 shows a semiconductor module with a housing, a circuit carrier with an insulating carrier and a metallization layer applied to one side of the insulating carrier, as well as a connection lug with a first and second load connection section and a shunt resistance area.
- the shunt resistance region is electrically arranged between the first and second load connection sections and connected in series with the first and second load connection sections.
- the connection lug in the area of the second load connection section is electrically conductively connected to a first section of the metallization layer by a first cohesive connection.
- the first load connection section is led out of the housing and has a free end which is arranged on the outside of the housing.
- the WO 2019/034741 A1 shows a power semiconductor module with a shunt resistor. Sensor components are integrated into the power semiconductor modules. For simple current measurement, so-called shunt resistors (constant resistance elements) are used, which are mounted on specially designed connection zones on a ceramic power substrate (DCB) by soldering. Typically, the actual resistance element of the shunt is made of manganin (CuMnl2Ni) and the connections are made of copper.
- US 7,187,568 B2 shows a structure for power electronic circuits that reduces the power requirement on a DC bus and thus the occurrence of parasitic inductance.
- the structure shows a carrier that can accommodate one or more power electronic circuits.
- the carrier can support the heat dissipation from the circuits by means of a fluid circulating through the carrier.
- the carrier can act as a shield against both external EMI/RFI and interference generated by the operation of the power electronic circuits.
- a connection of the circuits with external circuits is z. B. possible through direct contact between the terminal assembly and the AC and DC circuit components.
- Modular units can be assembled that can be connected to electronic circuits via plug-in devices or via an interface with a backplane or similar assembly and connection structures.
- the DE 102006 027482 B3 describes a housed semiconductor circuit arrangement with a substrate with conductor tracks and semiconductor components arranged thereon in accordance with the circuit and with a connecting device, which consists of a film composite of at least two electrically conductive layers, each with an insulating layer arranged between them, with at least one conductive layer in is structured and thus forms conductor tracks.
- At least one conductive layer has first contact devices for connection surfaces of the semiconductor components.
- At least one part This and/or a further conductive layer is a part of at least one second contact device for reversible connection to an external supply line.
- the second contact device has at least one spring element with an abutment in the housing and/or at least one locking screw.
- DE 11 2015 003 117 T5 has a semiconductor device comprising: a plurality of power elements; a conductive plate; a current detection section that detects current.
- the multiple power elements include a first power element and a second power element.
- the conductive plate includes: a first support portion to which a first end of the first power element is connected; a second support portion to which a first end of the second power element is connected; a third support portion to which a second end of the first power element is connected; a fourth support portion to which a second end of the second power element is connected; a first connection section; and an output port.
- the first support section is connected to a first power supply and the fourth support section is connected to a second power supply.
- the current detection section is attached to the output terminal, and a magnetic field generated by a flow of current in the output terminal passes through the current detection part.
- high-current interfaces with different designs, such as those in US 2021/156909 A1 or EP 16222 26 A1, which shows a high-current interface for motor vehicles, with a plug and a socket that can be pushed onto this plug.
- high-current interfaces of this type have the advantage that no individual parts have to be handled during assembly or to release the connection and no tools are required. It is only necessary to insert the plug into the socket by hand and to lock both parts of the high-current interface together by overcoming a pressure point.
- the present invention eliminates the shortcomings of the prior art through a new approach to the structural integration of a power semiconductor module with a plug connection.
- Screwable power contacts are replaced by a simple and secure plug connection and a module with the extensive functionalities of a Voltage converter unit, load contacts, current sensor and electrical machine connection.
- the present invention is based on the object of providing a modular circuit arrangement that is highly integrated both functionally and structurally.
- Another task is to achieve a floating storage of the power contact to reduce the susceptibility to errors due to thermal stresses.
- Another task is to achieve fewer parasitic elements than in conventional systems and to reduce line length and number of components in order to increase the power density. This is accompanied by the task of improving the EMC behavior, since the propagation paths in the module and out of it the parasitic elements have a serious influence on the resulting radio interference voltages.
- Another task is to increase service friendliness by providing individually, easily replaceable and testable units as modules. This is accompanied by a system-friendly design by simplifying the mechatronic integration between the inverter and the electrical machine to achieve higher energy densities.
- Another task is to measure the current between the power module and the electrical machine so that the entire drive unit can be controlled.
- This sensor system is integrated directly into the circuit structure on the load contact, making external measurement obsolete with an associated increase in the number of components.
- the power semiconductor module with a plug connection is designed according to the invention in such a way that the power semiconductor module has a power module structure connecting at least one load connection to an AC load connection via respective power semiconductors and the power module structure functionally integrates the plug connection as a contact connection and a detachable holding connection.
- the power module structure can have at least one heat sink.
- the power module structure can have at least one heat sink with a DCB (direct bonded copper) structure on which the power semiconductors are attached.
- the AC load connection can be coupled to a current sensor.
- the power module structure can have at least one flow concentrator.
- the power module structure can also have a power module frame.
- the plug-in connection can have at least two corresponding slats, which are dimensioned in such a way that the plug-in connection with the slats includes a machine wire in a releasably fixing manner.
- the power semiconductor module with a plug-in connection can have a power module frame, which encloses the power semiconductor module with a plug-in connection in such a way that complete hard casting of the power module frame is possible, with only the load connection not being enclosed.
- a use according to the invention of a power semiconductor module according to the invention with a plug-in connection can be for detachable contacting and holding on a respective machine wire of a winding head on a stator package of an electrical machine.
- the power semiconductor circuit arrangement is built on a material with a very high current carrying capacity, for example a DCB (direct bonded copper) structure.
- DCB direct bonded copper
- the advantages of DCB technology over other construction methods lie primarily in the high current-carrying capacity of the copper due to its thickness and the good cooling through a ceramic material, the high adhesion of the copper to the ceramic and the very good thermal conductivity of the ceramic.
- a non-contact current sensor for example a Hall element
- the current sensor with at least one magnetic flux concentrator for example made of NiFe
- the current sensor IC sitting on a rigid-flexible circuit board.
- the plug connection in the power semiconductor module is designed as a power contact with a lamella plug connection and is integrated into the power semiconductor module structure.
- the plug-in system can also be designed the other way around, so that the power module output is designed as a plug-in contact that is plugged into a plug-in connection with a spring contact.
- the machine wire for contacting the plug connection of the power semiconductor module with the plug connection from the winding head of the stator package of the electrical machine is designed, for example, as a hair pin.
- the plug-in connection with lamellas of the power semiconductor module with plug-in connection welded to the load contact consists of lamellar spring plate on both sides with high current-carrying capacity, e.g. made of coated copper-berrylium.
- Fig. 1 shows a first exemplary power semiconductor module with a plug connection in a perspective view
- Fig. 2 shows a first exemplary power semiconductor module with a plug connection according to Figure 1 in a top view
- Fig. 3 is a first exemplary detailed view of a power semiconductor module with a plug connection according to Figure 1 in a perspective view;
- Fig. 4 shows a first exemplary power semiconductor module with a plug connection according to Fig. 1 in a first side sectional view
- Fig. 5 shows a first exemplary power semiconductor module with a plug connection according to Figure 1 in a second side sectional view in a connection with a winding head and
- FIG. 6 several first exemplary power semiconductor modules with respective plug connections according to Figure 1 in a connection with a stator package of an electrical machine in a perspective view.
- Fig. 1 shows an example of a first power semiconductor module with plug connection 1 in a perspective view.
- the power module structure 2 comprises a plug connection 5, which is connected to respective load connections 3 via power semiconductors 6, the power module structure 2 having at least one heat sink 4 and a current sensor 8.
- Fig. 2 shows an example of a first power semiconductor module with plug connection 1 according to Figure 1 in a top view, so that the components that are on the heat sink 4 can be seen.
- the plug connection 5 there is a current sensor 8 on its own circuit board 10 appropriate.
- the respective power semiconductors 6 are attached to the DCB (direct bonded copper) structure 7.
- the load connection 3 is designed as a flag or tab.
- the power module frame 9 encloses the components of the power module structure 2 standing on the heat sink 4, so that it has a limit for possible potting, with the contacts for the load connection 3 and the plug connection 1 protruding from the power semiconductor module and enabling simple and secure contacting .
- Fig. 3 shows an example of a first detailed view of the connection of a power semiconductor module with plug connection 1 according to Figure 1 in a perspective view.
- the plug connection 5 sits on the AC load connection 12.
- the current sensor 8 attached to the circuit board 10 is configured next to the flow concentrator 11.
- Fig. 4 shows an example of a first power semiconductor module with plug connection 1 according to Figure 1 in a first side sectional view.
- the plug connection 5 with two lamellas as contact sits on the AC load connection 12 with the current sensor 8.
- the AC load connection 12 is led to the DCB (direct bonded copper) structure 7 with the respective power semiconductors.
- the load connection 3 comes from the DCB (direct bonded copper) structure 7.
- the DCB (direct bonded copper) structure 7 rests on the heat sink 4.
- Fig. 5 shows an example of a first power semiconductor module with a plug connection 1 according to Figure 1 in a second side sectional view in a connection with a winding head 15 via a machine wire 14 onto which the plug connection 5 is plugged, the lamellas 13 being able to detach the machine wire 14 in a non-positive manner include.
- the entire power module structure 2 with the heat sink 4 is kept at a distance from the winding head 15.
- Fig. 6 shows an example of several first power semiconductor modules with respective plug connection 1 according to Figure 1 in a connection with a stator pack 16 of an electrical machine 17, which is not further developed, in a perspective view.
- six power semiconductor modules with a plug connection 1 are shown plugged onto respective machine wires 14 which are guided rotationally symmetrically from the stator package 16.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
L'invention concerne un module semi-conducteur de puissance à connexion enfichable (1). Le module semi-conducteur de puissance comprend une structure de module de puissance (2) qui permet de connecter au moins une connexion de charge (3) à une connexion de charge à courant alternatif (12) par l'intermédiaire d'un semi-conducteur de puissance respectif (6), et la structure de module de puissance (2) intègre la fonction d'une connexion de contact et d'une connexion de maintien amovible dans la connexion enfichable (5). L'invention concerne en outre l'utilisation d'un module semi-conducteur de puissance à connexion enfichable (1).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE202022102513.4 | 2022-05-06 | ||
| DE102022111406.6A DE102022111406A1 (de) | 2022-05-06 | 2022-05-06 | Leistungshalbleiter-modul mit steckverbindung |
| DE102022111406.6 | 2022-05-06 | ||
| DE202022102513.4U DE202022102513U1 (de) | 2022-05-06 | 2022-05-06 | Leistungshalbleiter-Modul mit Steckverbindung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023213346A1 true WO2023213346A1 (fr) | 2023-11-09 |
Family
ID=86332235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2023/100285 Ceased WO2023213346A1 (fr) | 2022-05-06 | 2023-04-20 | Module semi-conducteur de puissance à connexion enfichable |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2023213346A1 (fr) |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1622226A1 (fr) | 2004-07-30 | 2006-02-01 | Lisa Dräxlmaier GmbH | Interface à courant fort pour véhicules automobiles |
| US7187568B2 (en) | 2002-01-16 | 2007-03-06 | Rockwell Automation Technologies, Inc. | Power converter having improved terminal structure |
| DE102006027482B3 (de) | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
| US7717747B2 (en) | 2006-11-06 | 2010-05-18 | Gm Global Technology Operations, Inc. | Power inverter connector having integrated current sensors |
| DE102010038727A1 (de) * | 2010-07-30 | 2012-02-02 | Infineon Technologies Ag | Leistungshaltleitermodul, Verfahren zur Herstellung eines Leistungshalbleitermoduls und eines Gehäuseelements für ein Leistungshalbleitermodul |
| EP2467001A1 (fr) * | 2010-12-17 | 2012-06-20 | SEMIKRON Elektronik GmbH & Co. KG | Agencement de commutation doté d'au moins deux modules partiels |
| DE112011101833T5 (de) * | 2010-09-15 | 2013-03-14 | Aisin Aw Co., Ltd. | Wechselrichtervorrichtung |
| DE102012211924A1 (de) * | 2012-07-09 | 2014-01-09 | Infineon Technologies Ag | Halbleitermodul mit einem in einer Anschlusslasche integrierten Shunt-Widerstand und Verfahren zur Ermittlung eines durch einen Lastanschluss eines Halbleitermoduls fließenden Stromes |
| DE112015003117T5 (de) | 2014-07-03 | 2017-03-30 | Denso Corporation | Halbleitervorrichtung |
| DE102017001166A1 (de) * | 2017-01-31 | 2018-08-02 | Kostal Kontakt Systeme Gmbh | Kontaktlamelle für ein buchsenartiges Steckverbinderteil und buchsenartiges Steckverbinderteil |
| EP3432006A1 (fr) * | 2017-07-20 | 2019-01-23 | Audi Ag | Dispositif électronique avec un capteur de courant intégré dans un radiateur |
| WO2019034741A1 (fr) | 2017-08-18 | 2019-02-21 | Danfoss Silicon Power Gmbh | Semi-conducteur de puissance à résistance shunt |
| WO2020219955A1 (fr) * | 2019-04-25 | 2020-10-29 | American Axle & Manufacturing, Inc. | Module à entraînement électrique |
| WO2021074896A1 (fr) * | 2019-10-16 | 2021-04-22 | TE Connectivity Services Gmbh | Ensemble contact |
| US20210156909A1 (en) | 2016-11-29 | 2021-05-27 | Seiko Epson Corporation | Electronic component handler and electronic component tester |
-
2023
- 2023-04-20 WO PCT/DE2023/100285 patent/WO2023213346A1/fr not_active Ceased
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187568B2 (en) | 2002-01-16 | 2007-03-06 | Rockwell Automation Technologies, Inc. | Power converter having improved terminal structure |
| EP1622226A1 (fr) | 2004-07-30 | 2006-02-01 | Lisa Dräxlmaier GmbH | Interface à courant fort pour véhicules automobiles |
| DE102006027482B3 (de) | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
| US7717747B2 (en) | 2006-11-06 | 2010-05-18 | Gm Global Technology Operations, Inc. | Power inverter connector having integrated current sensors |
| DE102010038727A1 (de) * | 2010-07-30 | 2012-02-02 | Infineon Technologies Ag | Leistungshaltleitermodul, Verfahren zur Herstellung eines Leistungshalbleitermoduls und eines Gehäuseelements für ein Leistungshalbleitermodul |
| DE112011101833T5 (de) * | 2010-09-15 | 2013-03-14 | Aisin Aw Co., Ltd. | Wechselrichtervorrichtung |
| EP2467001A1 (fr) * | 2010-12-17 | 2012-06-20 | SEMIKRON Elektronik GmbH & Co. KG | Agencement de commutation doté d'au moins deux modules partiels |
| US20140035605A1 (en) | 2012-07-09 | 2014-02-06 | Infineon Technologies Ag | Shunt Resistor Integrated in a Connection Lug of a Semiconductor Module and Method for Determining a Current Flowing Through a Load Connection of a Semiconductor Module |
| DE102012211924A1 (de) * | 2012-07-09 | 2014-01-09 | Infineon Technologies Ag | Halbleitermodul mit einem in einer Anschlusslasche integrierten Shunt-Widerstand und Verfahren zur Ermittlung eines durch einen Lastanschluss eines Halbleitermoduls fließenden Stromes |
| DE112015003117T5 (de) | 2014-07-03 | 2017-03-30 | Denso Corporation | Halbleitervorrichtung |
| US20210156909A1 (en) | 2016-11-29 | 2021-05-27 | Seiko Epson Corporation | Electronic component handler and electronic component tester |
| DE102017001166A1 (de) * | 2017-01-31 | 2018-08-02 | Kostal Kontakt Systeme Gmbh | Kontaktlamelle für ein buchsenartiges Steckverbinderteil und buchsenartiges Steckverbinderteil |
| EP3432006A1 (fr) * | 2017-07-20 | 2019-01-23 | Audi Ag | Dispositif électronique avec un capteur de courant intégré dans un radiateur |
| WO2019034741A1 (fr) | 2017-08-18 | 2019-02-21 | Danfoss Silicon Power Gmbh | Semi-conducteur de puissance à résistance shunt |
| WO2020219955A1 (fr) * | 2019-04-25 | 2020-10-29 | American Axle & Manufacturing, Inc. | Module à entraînement électrique |
| WO2021074896A1 (fr) * | 2019-10-16 | 2021-04-22 | TE Connectivity Services Gmbh | Ensemble contact |
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