WO2024166643A1 - Carte de circuit imprimé - Google Patents

Carte de circuit imprimé Download PDF

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Publication number
WO2024166643A1
WO2024166643A1 PCT/JP2024/001395 JP2024001395W WO2024166643A1 WO 2024166643 A1 WO2024166643 A1 WO 2024166643A1 JP 2024001395 W JP2024001395 W JP 2024001395W WO 2024166643 A1 WO2024166643 A1 WO 2024166643A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper foil
circuit board
prepreg
power semiconductor
power semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/001395
Other languages
English (en)
Japanese (ja)
Inventor
大介 槇尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imasen Electric Industrial Co Ltd
Original Assignee
Imasen Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imasen Electric Industrial Co Ltd filed Critical Imasen Electric Industrial Co Ltd
Publication of WO2024166643A1 publication Critical patent/WO2024166643A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present invention relates to a circuit board.
  • it relates to a main circuit board used in a power conversion device.
  • a power conversion device is a device that converts current input from an AC power source to DC, converts DC current input from a battery to AC, and outputs the input power by stepping up or stepping down to a different voltage. Specifically, this includes devices such as DC/DC converters and inverters. In recent years, there has been a demand for power conversion devices to be compact while still supporting high output. Also, the power semiconductors in high-output power conversion devices generate more heat, so there is a demand for improved heat dissipation performance.
  • Patent Document 1 discloses a semiconductor device that includes a semiconductor element, a metal substrate on which a thermally conductive insulating layer is formed, and a resin member having a first positioning member for positioning the semiconductor element in a first predetermined position, and in which the semiconductor element is bonded with an adhesive onto the insulating layer of the metal substrate while being positioned in the first predetermined position by the first positioning member.
  • the present invention was made in consideration of the above problems, and the problem to be solved is to provide a circuit board for a power conversion device that has lower electrical resistance and thermal resistance than conventional devices, and has low impedance and excellent heat dissipation characteristics.
  • the present invention relates to a circuit board.
  • the circuit board of the present invention is characterized by comprising: a power semiconductor having an input section arranged on one side and an output section arranged on the side opposite to the input section; a prepreg that encapsulates the power semiconductor and forms a flat upper surface and a flat lower surface; a first copper foil that is attached to the flat upper surface formed by the power semiconductor and the prepreg and is electrically connected to the power semiconductor; a second copper foil that is attached to the flat lower surface formed by the power semiconductor and the prepreg and is electrically connected to the power semiconductor; a conductive adhesive applied to at least a portion of the second copper foil; and a bus bar that is bonded to the second copper foil via the conductive adhesive.
  • the power semiconductor of the circuit board of the present invention preferably has an input section arranged on the upper surface side and an output section arranged on the lower surface side, and further includes an input capacitor connected to the first copper foil.
  • the power semiconductor of the circuit board can have the input section arranged on the underside and the output section arranged on the upper side.
  • the circuit board of the present invention can use a MOSFET as the power semiconductor, with the source of the MOSFET located on one side and the drain located on the side opposite to the side on which the source is located.
  • the circuit board of the present invention can have a highly thermally conductive prepreg attached to the underside of the busbar.
  • the circuit board of the present invention has a power semiconductor with an input section on one side and an output section on the side opposite the input section, which is sealed with prepreg to form a flat upper surface and a flat lower surface.
  • Copper foil is attached to each of the flat upper surface and the flat lower surface to ensure conductivity between the power semiconductor and the copper foil, and a copper bus bar is attached to the copper foil to form the board, which uses the copper bus bar for heat diffusion to improve heat dissipation.
  • the circuit board of the present invention has flat top and bottom surfaces, which allows other elements to be mounted on the board surface, making the most of the board surface.
  • the circuit board of the present invention allows for free patterning on the first copper foil and the second copper foil, enabling highly flexible wiring.
  • the circuit board of the present invention can reduce impedance by connecting an input capacitor to the first copper foil, allowing the input capacitor to be made smaller.
  • the circuit board of the present invention can be given insulating properties by attaching a highly thermally conductive prepreg to the underside of the busbar.
  • FIG. 1 is a cross-sectional view of a circuit board according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a power semiconductor sealed in a circuit board according to the present invention.
  • FIG. 3 is a cross-sectional view of a circuit board having an input capacitor disposed on its upper surface and a heat sink disposed on its lower surface.
  • circuit board according to the present invention is embodied as a main circuit board for a power conversion device
  • a manufacturing method for the main circuit board will be described in detail with reference to the drawings. Note that the following embodiment is merely an example and is not intended to limit the scope of the claims.
  • the circuit board of this embodiment includes a power semiconductor 1, a prepreg 2, a copper foil 3, and a bus bar 7.
  • Figure 1 shows a circuit board S including two power semiconductors 1A, 1B to form a switching circuit.
  • the circuit board S may include even more power semiconductors.
  • As the power semiconductor a diode, a transistor, or an integrated circuit integrating these may be used.
  • the power semiconductors 1A and 1B are sealed with prepreg 2.
  • the power semiconductors 1A and 1B and the prepreg 2 form flat upper and lower surfaces on the circuit board S.
  • a material made of glass epoxy fiber impregnated with resin is preferably used for the prepreg 2.
  • the first copper foil 3 is attached to the flat upper surface formed by the power semiconductors 1A, 1B and the prepreg 2, and the first copper foil 3 is in contact with and conductive to the input parts of the power semiconductors 1A, 1B.
  • the second copper foil 4 is attached to the flat lower surface formed by the power semiconductors 1A, 1B and the prepreg 2, and the second copper foil 4 is in contact with and conductive to the input parts of the power semiconductors 1A, 1B.
  • the first copper foil 3, the second copper foil 4, and the power semiconductors 1A, 1B form a half-bridge circuit.
  • the power semiconductor 1 has an input section arranged on one side and an output section arranged on the other side.
  • Figure 2 shows a schematic diagram of a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) applied to the power semiconductor 1, in which the source 12 is arranged on the bottom side and the drain 13 is arranged on the top side.
  • MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
  • the gate 11 can be arranged on either the top or bottom side, but Figure 2 shows an example in which the gate 11 and source 12 are arranged on the same bottom side.
  • the first copper foil 3 and the second copper foil 4 can each be etched to form a desired pattern before being attached to the prepreg 2.
  • the first copper foil 3 can be attached to the upper surface of the power semiconductors 1A, 1B and the prepreg 2 and then etched
  • the second copper foil 4 can be attached to the lower surface of the power semiconductors 1A, 1B and the prepreg 2 and then etched to form a desired pattern.
  • a bus bar 7 is bonded to the second copper foil 4 on which the pattern is formed.
  • a highly thermally conductive adhesive 5 is applied to the locations of the second copper foil 4 where a large current conduction path needs to be formed, forming a conductive adhesive layer.
  • a highly thermally conductive prepreg 6 is disposed in the locations where insulation is needed between the second copper foil 4 and the bus bar 7.
  • the bus bar 7 is bonded to the second copper foil 4 via the conductive adhesive 5 and the highly thermally conductive prepreg 6.
  • a material having a thermal conductivity of, for example, 3.0 W/mK or more is used for both the conductive adhesive 5 and the highly thermally conductive prepreg 6, a material having a thermal conductivity of, for example, 3.0 W/mK or more is used.
  • a copper bus bar is preferably used for the bus bar 7.
  • the power semiconductors 1A and 1B can dissipate heat by diffusing it through the copper bus bar 7, improving the heat dissipation characteristics of the entire circuit board S.
  • a highly thermally conductive prepreg 6' can be placed on the underside of the busbar 7 to provide insulation, and a heat sink 8 can be attached to the underside of the prepreg 6' to further improve heat dissipation.
  • the input capacitor 9 can be placed on the top surface of the first copper foil 3. By directly contacting the first copper foil 3, it is possible to lower the impedance and make the input capacitor 9 smaller. Furthermore, by placing the input board 10 on the top surface of the input capacitor 9, the input board 10 is connected to the first copper foil 3 at the shortest distance, achieving a further reduction in impedance.
  • the circuit board S can be manufactured, for example, by the following manufacturing method. packaging the power semiconductor 1 so that the input is located on one side of the power semiconductor 1 and the output is located on the side opposite to the input; an encapsulation step in which the power semiconductor 1 is moulded by the prepreg 2 so that the power semiconductor 1 and the prepreg 2 form a flat upper surface and a flat lower surface. A step of attaching a first copper foil 3 to the flat upper surface formed by the power semiconductor 1 and the prepreg 2, thereby making the first copper foil 3 and the power semiconductor 1 electrically conductive. A step of attaching a second copper foil 4 to the flat lower surface formed by the power semiconductor 1 and the prepreg 2, thereby making the second copper foil 4 and the power semiconductor 1 electrically conductive.
  • the circuit board according to the present invention is particularly suitable for mounting on a power conversion device.
  • the power conversion device can be applied to vehicles, generators, and various other industrial or household equipment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne une carte de circuit imprimé pour des dispositifs de conversion d'énergie électrique, la carte de circuit imprimé ayant une résistance électrique et une résistance thermique réduites, une faible impédance et d'excellentes caractéristiques de dissipation de chaleur. Cette carte de circuit imprimé est caractérisée en ce qu'elle comprend : des semi-conducteurs de puissance 1A, 1B qui ont chacun une unité d'entrée disposée sur une surface et une unité de sortie disposée sur une autre surface qui est située sur le côté opposé à l'unité d'entrée ; un préimprégné 2 qui enferme les semi-conducteurs de puissance 1A, 1B, et forme une surface supérieure plate et une surface inférieure plate ; une première feuille de cuivre 3 qui est liée à la surface supérieure plate formée par les semi-conducteurs de puissance 1A, 1B et le préimprégné 2, et est électriquement connectée aux semi-conducteurs de puissance 1A, 1B ; une seconde feuille de cuivre 4 qui est liée à la surface inférieure plate formée par les semi-conducteurs de puissance 1A, 1B et le préimprégné 2, et qui est connectée électriquement aux semi-conducteurs de puissance 1A, 1B ; un adhésif conducteur 5 qui est appliqué sur au moins une partie de la seconde feuille de cuivre 4 ; et une barre omnibus 7 qui est collée à la seconde feuille de cuivre par l'intermédiaire de l'adhésif conducteur 5.
PCT/JP2024/001395 2023-02-10 2024-01-19 Carte de circuit imprimé Ceased WO2024166643A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023018849A JP2024113724A (ja) 2023-02-10 2023-02-10 回路基板
JP2023-018849 2023-02-10

Publications (1)

Publication Number Publication Date
WO2024166643A1 true WO2024166643A1 (fr) 2024-08-15

Family

ID=92262356

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/001395 Ceased WO2024166643A1 (fr) 2023-02-10 2024-01-19 Carte de circuit imprimé

Country Status (2)

Country Link
JP (1) JP2024113724A (fr)
WO (1) WO2024166643A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171926A (ja) * 2012-02-20 2013-09-02 Denso Corp 電子部品
JP2016058415A (ja) * 2014-09-05 2016-04-21 日本特殊陶業株式会社 半導体パワーモジュールの製造方法
JP2017005073A (ja) * 2015-06-09 2017-01-05 富士通株式会社 電子装置の製造方法
JP2018536283A (ja) * 2016-03-18 2018-12-06 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィＭｉｔｓｕｂｉｓｈｉ Ｅｌｅｃｔｒｉｃ Ｒ＆Ｄ Ｃｅｎｔｒｅ Ｅｕｒｏｐｅ Ｂ．Ｖ． パワーモジュール、及びパワーモジュールを製造する方法
WO2020157963A1 (fr) * 2019-02-01 2020-08-06 三菱電機株式会社 Dispositif à semi-conducteur et dispositif de conversion de puissance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171926A (ja) * 2012-02-20 2013-09-02 Denso Corp 電子部品
JP2016058415A (ja) * 2014-09-05 2016-04-21 日本特殊陶業株式会社 半導体パワーモジュールの製造方法
JP2017005073A (ja) * 2015-06-09 2017-01-05 富士通株式会社 電子装置の製造方法
JP2018536283A (ja) * 2016-03-18 2018-12-06 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィＭｉｔｓｕｂｉｓｈｉ Ｅｌｅｃｔｒｉｃ Ｒ＆Ｄ Ｃｅｎｔｒｅ Ｅｕｒｏｐｅ Ｂ．Ｖ． パワーモジュール、及びパワーモジュールを製造する方法
WO2020157963A1 (fr) * 2019-02-01 2020-08-06 三菱電機株式会社 Dispositif à semi-conducteur et dispositif de conversion de puissance

Also Published As

Publication number Publication date
JP2024113724A (ja) 2024-08-23

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