WO2024242537A1 - Appareil de traitement de substrat haute-pression - Google Patents

Appareil de traitement de substrat haute-pression Download PDF

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Publication number
WO2024242537A1
WO2024242537A1 PCT/KR2024/095822 KR2024095822W WO2024242537A1 WO 2024242537 A1 WO2024242537 A1 WO 2024242537A1 KR 2024095822 W KR2024095822 W KR 2024095822W WO 2024242537 A1 WO2024242537 A1 WO 2024242537A1
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WO
WIPO (PCT)
Prior art keywords
housing
pressure
door
substrate processing
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2024/095822
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English (en)
Korean (ko)
Inventor
임근영
안재범
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HPSP Co Ltd
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HPSP Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HPSP Co Ltd filed Critical HPSP Co Ltd
Priority to CN202480018146.0A priority Critical patent/CN120917556A/zh
Publication of WO2024242537A1 publication Critical patent/WO2024242537A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the present invention relates to a processing device used for processing a substrate in a high pressure environment.
  • various processes are performed on the semiconductor substrate during the manufacturing process of semiconductor devices.
  • the processes include oxidation, nitridation, silicide, ion implantation, and deposition processes.
  • a gap may be created between the housing and the door. This gap may become a passage for gas inside the chamber to escape to the outside.
  • the background technology described above is technical information that the inventor possessed for deriving embodiments of the present invention or acquired in the process of deriving them, and cannot necessarily be said to be publicly known technology disclosed to the general public prior to the present application.
  • One object of the present invention is to provide a high-pressure substrate processing device capable of firmly maintaining a closed state between a housing and a door even under high pressure within a chamber.
  • Another object of the present invention is to provide a high-pressure substrate processing device capable of minimizing the power required for fastening between a housing and a door.
  • a high-pressure substrate processing device may include: an inner chamber formed to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer housing accommodating the inner chamber; and an outer door formed to be movable between a closed state that closes the outer housing and an open state that opens the outer housing, and an outer chamber formed to accommodate a protective gas supplied at a second pressure set in relation to the first pressure; and a fastening module having a support projection installed on the outer housing, a rotating member rotatably installed on the outer door, and a hooking projection protruding from the rotating member and arranged on the support projection as the rotating member rotates in the closed state.
  • the rotating member can be positioned within an area defined by the outer housing.
  • the rotating member may include a rotating ring having a ring shape.
  • a high-pressure substrate processing device comprises: an inner chamber formed to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer housing accommodating the inner chamber; and an outer door formed to be movable between a closed state that closes the outer housing and an open state that opens the outer housing, and the outer chamber formed to accommodate a protective gas supplied at a second pressure set in relation to the first pressure; and a fastening module having a support protrusion installed on the outer housing and a catch protrusion arranged on the support protrusion in a state connected to the outer door as the outer door moves in the closed state, wherein the outer door includes an upper plate that contacts the outer housing in the closed state, and the catch protrusion can be arranged on a lower side of the upper plate.
  • the outer door further includes a lower plate arranged at a different level from the upper plate, and the catch can be arranged between the upper plate and the lower plate.
  • the catch projection may include one of an upper portion arranged to correspond to a side surface of the upper plate; and a lower portion arranged to correspond to a side surface of the lower plate.
  • the outer door further includes a sealing material that comes into contact with the outer housing in the closed state, and the engaging projection can be formed to rotate independently of the contact between the sealing material and the outer housing.
  • the fastening module may further include a driving unit formed to rotate the engaging projection.
  • the fastening module may further include a rotating member on which the engaging projection is formed, and the driving unit may be formed to rotate the rotating member around a rotating axis arranged along the opening/closing direction of the outer door.
  • the driving unit may include a driven gear formed on the rotating member; a driving gear meshed with the driven gear; and a motor that rotates the driving gear.
  • a high-pressure substrate processing device comprises: a chamber having a housing formed to accommodate a substrate to be processed and a process gas supplied at a pressure higher than atmospheric pressure; and a door formed to move between a closed state that closes the housing and an open state that opens the housing; and a fastening module having a support protrusion installed in the housing and a catch protrusion arranged on the support protrusion in a state connected to the door as it moves in the closed state; wherein the door includes an upper plate that contacts the housing in the closed state, and the catch protrusion can be arranged on a lower side of the upper plate.
  • the door further includes a lower plate arranged at a different level from the upper plate, and the catch can be arranged between the upper plate and the lower plate.
  • the fastening module further includes a rotating member that is rotatably installed on the door and has the engaging projection formed in a protruding manner, and the engaging projection can be supported by the support projection as the rotating member rotates.
  • the door further includes a sealing material installed on the upper plate, and the catch projection can be formed to move independently of the contact between the housing and the sealing material in the closed state.
  • the process gas includes a reaction gas including an active gas and a protective gas which is an inert gas
  • the housing includes an inner housing formed to accommodate the substrate to be processed and the reaction gas; and an outer housing which accommodates the inner housing and is coupled to the inner housing to form a closed space that accommodates the protective gas, and the door can be formed to close the inner housing.
  • the housing and the door for accommodating the substrate and the high-pressure gas are maintained in a fastened state by the fastening module, and the fastening module is configured such that the engaging protrusion is moved relative to the support protrusion installed in the housing and is positioned on the support protrusion, so that the closed state between the housing and the door can be firmly maintained even under high pressure within the chamber due to the fastening between the engaging protrusion and the support protrusion.
  • FIG. 1 is a conceptual diagram of a high-pressure substrate processing device (100) according to one embodiment of the present invention.
  • Figure 2 is an exploded perspective view showing the open state of the high-pressure substrate processing device (100) of Figure 1.
  • FIG. 3 is a cross-sectional view showing the closed state of the high-pressure substrate processing device (100) of FIG. 2.
  • FIG. 4 is a cutaway perspective view for explaining the configuration for driving the rotating ring (157) of FIG. 3.
  • FIG. 5 is a cross-sectional view showing the main part of a high-pressure substrate processing device (100') according to a modified example of the high-pressure substrate processing device (100) of FIG. 3.
  • FIG. 6 is a cross-sectional view showing the main part of a high-pressure substrate processing device (100”) according to another modified example of the high-pressure substrate processing device (100) of FIG. 3.
  • FIG. 7 is a cross-sectional view showing a closed state of a high-pressure substrate processing device (200) according to another embodiment of the present invention.
  • FIG. 1 is a conceptual diagram of a high-pressure substrate processing device (100) according to one embodiment of the present invention.
  • the high pressure substrate processing device (100) may include an inner chamber (110), an outer chamber (120), a supply module (130), and an exhaust module (140).
  • the inner chamber (110) forms a processing space that accommodates an object to be processed.
  • the inner chamber (110) may be made of a non-metallic material, for example, quartz, to reduce contamination in a high temperature and high pressure working environment.
  • a heater not shown
  • the temperature of the inner chamber (110) may reach several hundred to several thousand degrees Celsius.
  • the object may be, for example, a semiconductor substrate (W, see FIG. 2) mounted on a holder.
  • the holder may be a wafer boat (113, see FIG. 2) capable of stacking a plurality of substrates (W) to be processed.
  • the outer chamber (120) forms an internal space that accommodates the inner chamber (110).
  • the outer chamber (120) is arranged on the outside of the inner chamber (110). Unlike the inner chamber (110), the outer chamber (120) is free from concerns about causing contamination to the object, and thus can be made of a metal material.
  • the gas supply module (130) is configured to supply gas to the inner chamber (110) and the outer chamber (120).
  • the gas supply module (130) has a gas supplier (131) that serves as a source of gas.
  • the gas supplier (131) can selectively supply hydrogen gas (H 2 ), deuterium gas (D 2 ), fluorine gas (F 2 ), ammonia gas (NH 3 ), chlorine gas (Cl 2 ), nitrogen gas (N 2 ), etc. as a reaction gas for a heat treatment process to the inner chamber (110).
  • the gas supplier (131) can supply nitrogen gas or argon gas (Ar), which is an inert gas, as a protective gas to the outer chamber (120).
  • the reaction gas and the protective gas may be simply referred to as process gas.
  • the above process gas is supplied to the inner chamber (110) or the outer chamber (120) through the reaction gas line (133) or the protective gas line (135), respectively.
  • the protective gas supplied to the outer chamber (120) is specifically supplied to the space (protection space) between the outer chamber (120) and the inner chamber (110).
  • the above process gas can be supplied so as to form a pressure higher than atmospheric pressure (high pressure), for example, a pressure ranging from several atmospheres to several tens of atmospheres.
  • high pressure atmospheric pressure
  • the pressure of the reaction gas is a first pressure
  • the pressure of the protective gas is a second pressure
  • they can be maintained in a set relationship.
  • the second pressure can be set to be slightly greater than the first pressure.
  • the exhaust module (140) is configured to exhaust the process gas.
  • an exhaust pipe (141) is connected to the upper portion of the inner chamber (110).
  • an exhaust pipe (145) connected to the outer chamber (120) may be similarly provided. Since these exhaust pipes (141 and 145) are integrated into one, the reaction gas is diluted in the protective gas during the exhaust process, thereby lowering its concentration.
  • FIG. 2 is an exploded perspective view showing the open state of the high-pressure substrate processing device (100) of FIG. 1
  • FIG. 3 is a cross-sectional view showing the closed state of the high-pressure substrate processing device (100) of FIG. 2.
  • the inner chamber (110) includes an inner housing (not shown) and an inner door (115).
  • the inner housing forms the processing space for accommodating a substrate to be processed (W), and its lower part may have an open shape.
  • the inner door (115) has a shape that closes the open lower part of the inner housing.
  • the inner door (115) may have a slit shape that is generally open downward.
  • the processing space As the inner door (115) descends, the processing space is opened (open state, see Fig. 2). In the open state, the substrate to be processed is unloaded from the boat (113), and a new substrate to be processed is loaded into the boat (113). As the inner door (115) rises, the processing space is closed (closed state, see Fig. 3). In the closed state, processing, such as heat treatment or deposition, is performed on the substrate to be processed (W).
  • the outer chamber (120) also includes an outer housing (121) and an outer door (125).
  • the outer housing (121) has a size to accommodate the inner chamber (110).
  • An inner housing (not shown) is mounted on the outer housing (121).
  • the outer door (125) can also open and close the outer housing (121) by moving.
  • the outer door (125) can be connected to the inner door (115) by a support member (119).
  • the support member (119) can have a spring support structure that elastically expands along an opening and closing direction (E).
  • the opening and closing direction (E) is a direction in which the outer door (125) moves to switch between the closed state and the open state.
  • the opening and closing direction (E) can be substantially the same direction as a lifting or vertical direction.
  • the support member (119) allows the outer door (125) to move toward the inner door (115).
  • the support member (119) may be, for example, an O-ring.
  • the inner door (115) and the outer door (125) may be integrated with each other to form a single member.
  • the outer door (125) opens and closes the outer housing (121) while moving up and down together with the inner door (115). Unlike the above, the inner door (115) and the outer door (125) are not connected to each other and can be opened and closed independently.
  • the high-pressure substrate processing device (100) may further include a fastening module (150) for fastening the outer housing (121) and the outer door (125) in the closed state. Since the inner door (115) is supported by the support member (119) to the outer door (125), the fastening module (150) also causes the inner door (115) to be in close contact with the inner housing. The fastening module (150) causes the protective gas to be maintained at the second pressure within the outer chamber (120). The fastening module (150) also exerts a fastening force so that the reaction gas is maintained at the first pressure within the inner chamber (110).
  • the fastening module (150) may specifically include a support protrusion (151) and a catch protrusion (155).
  • the support protrusion (151) is a protrusion installed on the outer housing (121).
  • the support protrusion (151) may be installed on the inner surface of the outer housing (121), as in the present embodiment.
  • the support protrusions (151) may be arranged in multiple numbers along the circumferential direction of the inner surface.
  • the multiple support protrusions (151) may be arranged on the same level or plane along the lifting direction (E).
  • the catch projection (155) is sized to pass between adjacent pairs of support projections (151) when the outer door (125) moves in the lifting direction (E).
  • the catch projections (155) may be provided in multiple numbers, like the support projections (151).
  • the catch projections (155) are formed to move relative to the outer door (125) in the closed state and to be placed on the support projections (151).
  • the catch (155) can be moved while being connected to the outer door (125).
  • the catch (155) can be, for example, rotatably installed on the outer door (125).
  • the catch (155) may be movably installed in the outer housing (121).
  • the catch (155) moves from the outer housing (121) toward the outer door (125) and is coupled to the outer door (125).
  • the outer door (125) may have a groove-like configuration (not shown) that accommodates the catch (155).
  • the catch (155) can be supported by the support projection (151) when positioned on the support projection (151) according to movement (fastened state). As a result, the outer door (125) can be maintained in a state of being firmly fastened to the outer housing (121) even under the high pressure of the process gas.
  • the plurality of catch projections (155) can rotate individually.
  • the catch projections (155) may be integrated with the rotating member (157) and rotate together with the rotating member (157).
  • the rotating member (157) may have a ring shape as illustrated.
  • the rotating member (157) may be referred to as a rotating ring.
  • the catch projections (155) may be formed to protrude outward from the outer surface of the rotating ring (157).
  • the rotating ring (157) may be arranged to rotate along the rotation direction (R) (centered on the rotation axis along the lifting direction (E)).
  • the rotating ring (157) can be rotatably coupled to the outer door (125).
  • the outer door (125) has an upper plate (126), and the rotating ring (157) ⁇ and the catch (155) ⁇ can be located on the lower side of the upper plate (126). If the outer door (125) also has a lower plate (127), the rotating ring (157) can be located between the plates (126 and 127).
  • a bearing (159) can be located between each of the upper plate (126) and the lower plate (127) and the rotating ring (157).
  • a thrust bearing can be used as the bearing (159).
  • the rotating ring (157) can also be located within an area defined by the outer housing (121) ⁇ and the support projection (151) ⁇ .
  • the upper plate (126) is arranged to be in contact with the outer housing (121) in the closed state.
  • the upper plate (126) and the lower plate (127) can be connected by a spacer (128).
  • the lower plate (127) can be arranged at a different level from the upper plate (126).
  • the spacer (128) can have a smaller diameter or width than the upper plate (126) and/or the lower plate (127).
  • the spacer (128) can be formed as a separate member from the upper plate (126) and the lower plate (127), or can form a single member with one of them.
  • a rotating ring (157) and, further, a catch projection (155) are positioned in the space secured by the spacer (128).
  • the rotating ring (157) can be arranged substantially parallel to the outer door (125) with the spacer (128) inserted into its hollow portion.
  • the outer door (125) may not be linked to the rotation of the rotary ring (157).
  • the rotary ring (157) may rotate independently of the contact state.
  • the sealant (129) may be an O-ring installed on the upper surface of the upper plate (126).
  • Fig. 4 is a cutaway perspective view for explaining the configuration for driving the rotating ring (157) of Fig. 3.
  • the rotating ring (157) can be driven to rotate by a driving unit (161).
  • the drive unit (161) may have a driven gear (163), a driving gear (164), and a motor (165).
  • the driven gear (163) may be formed on the inner surface of the rotating ring (157).
  • the driving gear (164) may be a gear that meshes with the driven gear (163).
  • the driving gear (164) may be located between the rotating ring (157) and the spacer (128).
  • the rotational power of the motor (165) is transmitted to the driving gear (164).
  • the transmission shaft connecting the output shaft of the motor (165) and the driving gear (164) can be arranged to penetrate the lower plate (127).
  • the driven gear (163) that is meshed with the driving gear (164) also rotates.
  • the rotating ring (157) rotates, and the engaging projection (155) also rotates along the rotational direction (R, see FIG. 2).
  • the engaging projection (155) can move on the supporting projection (151) or move to a misaligned position from the supporting projection (151) depending on its rotation.
  • the outer door (125) In the process of rotating the catch (155), the outer door (125) does not rotate together with the catch (155).
  • the power to be output from the motor (165) is sufficient to rotate the catch (155) excluding the outer door (125).
  • the drive unit (161) has been described as consisting of gears (163 and 164) and a motor (165), but the present invention is not limited thereto.
  • the drive unit may be configured using other actuators such as cylinders.
  • FIG. 5 is a cross-sectional view showing a main part of a high-pressure substrate processing device (100') according to a modified example of the high-pressure substrate processing device (100) of FIG. 3
  • FIG. 6 is a cross-sectional view showing a main part of a high-pressure substrate processing device (100”) according to another modified example of the high-pressure substrate processing device (100) of FIG. 3.
  • the same components as those of FIG. 3 are given the same reference numerals, and the bearing (159) is omitted for the simplification of the drawing.
  • the catch projection (155') has, unlike the previous catch projection (155), an upper portion (155a).
  • the upper portion (155a) may be a portion positioned to correspond to the side of the upper plate (126').
  • the upper surface of the upper portion (155a) may have approximately the same level as the upper surface of the upper plate (126'). Accordingly, the upper surface of the catch projection (155') may be in contact with the outer housing (121'), and the lower surface of the catch projection (155') may be in contact with the support projection (151).
  • the catch projection (155”) unlike the previous catch projection (155), has an upper portion (155a) and a lower portion (155b).
  • the upper portion (155a) may be a portion arranged to correspond to the side surface of the upper plate (126').
  • the lower portion (155b) may be a portion arranged to correspond to the side surface of the lower plate (127').
  • the upper surface of the upper portion (155a) may have approximately the same level as the upper surface of the upper plate (126').
  • the lower surface of the lower portion (155b) may have approximately the same level as the lower surface of the lower plate (127'). Accordingly, the upper surface of the catch projection (155") may be in contact with the outer housing (121"), and the lower surface of the catch projection (155") may be in contact with the support projection (151).
  • the driving unit (161) described above with reference to FIG. 4 can also be applied to the present modified examples.
  • a rotating disk (not shown) may be adopted instead of the rotating ring (157, 157', 157") as the rotating member.
  • the rotating disk is a solid disk and can be rotatably connected to the upper plate (126, 126', 126") and the bottom surface.
  • a concave portion may be formed in one of the rotating disk and the upper plate (126, 126', 126") for receiving a protrusion of the other.
  • a bearing may be arranged between the protrusion and the concave portion.
  • a ring gear is installed on the bottom surface of the rotating disk and can be rotationally driven by a motor and a pinion gear.
  • the above fastening modules (150, 150', 150") can also be applied to a semi-dual chamber having a slightly different form from the above-described dual chamber.
  • FIG. 7 illustrates an example in which the fastening module is applied to the above-described semi-dual chamber.
  • FIG. 7 is a cross-sectional view showing a closed state of a high-pressure substrate processing device (200) according to another embodiment of the present invention. Similar reference numerals are given to the same configurations as in the above-described embodiments, and a detailed description thereof is omitted.
  • the present invention has industrial applicability in the field of manufacturing high-pressure substrate processing devices.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un appareil de traitement de substrat haute pression comprenant : une chambre interne formée pour recevoir un substrat à traiter et un gaz de réaction appliqué à une première pression supérieure à la pression atmosphérique ; une chambre externe comprenant un boîtier externe pour recevoir la chambre interne et une porte externe formée pour être mobile entre un état fermé dans lequel le boîtier externe est fermé et un état ouvert dans lequel le boîtier externe est ouvert et formée pour recevoir un gaz de protection fourni à une seconde pression réglée par rapport à la première pression ; et un module de fixation comprenant une saillie de support installée dans le boîtier externe, un élément rotatif installé de manière rotative dans la porte externe et une saillie de verrouillage faisant saillie à partir de l'élément rotatif et disposée sur la saillie de support lorsque l'élément rotatif tourne dans l'état fermé.
PCT/KR2024/095822 2023-05-22 2024-05-17 Appareil de traitement de substrat haute-pression Ceased WO2024242537A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202480018146.0A CN120917556A (zh) 2023-05-22 2024-05-17 高压基板处理装置

Applications Claiming Priority (2)

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KR1020230065806A KR102614454B1 (ko) 2023-05-22 2023-05-22 고압 기판 처리 장치
KR10-2023-0065806 2023-05-22

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WO2024242537A1 true WO2024242537A1 (fr) 2024-11-28

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CN (1) CN120917556A (fr)
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KR102614454B1 (ko) * 2023-05-22 2023-12-19 주식회사 에이치피에스피 고압 기판 처리 장치
KR102751841B1 (ko) * 2023-09-01 2025-01-10 주식회사 에이치피에스피 고압 기판 처리 장치
KR102838342B1 (ko) * 2024-01-15 2025-07-25 (주) 예스티 기판 처리 장치
KR102735625B1 (ko) * 2024-02-28 2024-11-29 주식회사 에이치피에스피 고압 기판 처리 장치
KR102715518B1 (ko) * 2024-03-26 2024-10-14 (주) 예스티 기판 처리 장치
KR102716996B1 (ko) * 2024-04-11 2024-10-16 (주) 예스티 기판 처리 장치 및 이의 제어 방법
KR102788276B1 (ko) * 2024-06-17 2025-03-31 (주) 예스티 기판 처리 장치
KR102737706B1 (ko) * 2024-06-18 2024-12-04 (주) 예스티 기판 처리 장치

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JPH02138730A (ja) * 1988-08-26 1990-05-28 Tel Sagami Ltd 処理装置および処理方法
JPH07283164A (ja) * 1994-04-14 1995-10-27 Tokyo Electron Ltd 熱処理装置及び熱処理方法
KR20150086831A (ko) * 2014-01-20 2015-07-29 주식회사 풍산 반도체 기판 처리용 챔버 개폐장치
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CN120917556A (zh) 2025-11-07
TW202447822A (zh) 2024-12-01
TWI890448B (zh) 2025-07-11
KR102614454B1 (ko) 2023-12-19

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