WO2024253095A1 - Matériau pour revêtir un élément semi-conducteur, et corps fritté pour revêtir un élément semi-conducteur - Google Patents

Matériau pour revêtir un élément semi-conducteur, et corps fritté pour revêtir un élément semi-conducteur Download PDF

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Publication number
WO2024253095A1
WO2024253095A1 PCT/JP2024/020387 JP2024020387W WO2024253095A1 WO 2024253095 A1 WO2024253095 A1 WO 2024253095A1 JP 2024020387 W JP2024020387 W JP 2024020387W WO 2024253095 A1 WO2024253095 A1 WO 2024253095A1
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Prior art keywords
semiconductor element
glass
sio
zno
coating
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PCT/JP2024/020387
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English (en)
Japanese (ja)
Inventor
将行 廣瀬
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Nippon Electric Glass Co Ltd
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Nippon Electric Glass Co Ltd
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Priority to JP2025526115A priority Critical patent/JPWO2024253095A1/ja
Publication of WO2024253095A1 publication Critical patent/WO2024253095A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Definitions

  • the present invention relates to a material for coating semiconductor elements and a sintered body for coating semiconductor elements.
  • the surfaces including the P-N junctions, are generally covered with glass. This stabilizes the surface of the semiconductor element and prevents deterioration of characteristics over time.
  • the properties required of a material for coating semiconductor elements include (1) having a thermal expansion coefficient that matches that of the semiconductor element so that cracks and the like do not occur due to differences in the thermal expansion coefficient with the semiconductor element, (2) being able to coat at low temperatures (e.g., below 900°C) to prevent deterioration of the characteristics of the semiconductor element, (3) being acid-resistant to the extent that it is not eroded in the acid treatment process after the coating layer is formed, and (4) being able to regulate the surface charge density within a certain range in order to optimize the electrical characteristics of the semiconductor element.
  • lead-based glasses such as PbO-SiO 2 -Al 2 O 3 -B 2 O 3 based glasses have been known as materials for covering semiconductor elements (for example, see Patent Document 1), but currently, from the viewpoint of avoiding the inclusion of environmentally hazardous substances, zinc-based glasses such as ZnO-B 2 O 3 -SiO 2 based glasses are being actively developed (for example, see Patent Document 2).
  • zinc-based glass has a problem in that it has low chemical durability and is easily corroded during the acid treatment process after the coating layer is formed. For this reason, it was necessary to form an additional protective film on the surface of the coating layer before carrying out the acid treatment.
  • the content of SiO2 in the glass composition is increased, the acid resistance and the reverse voltage of the semiconductor element are improved, but the reverse leakage current of the semiconductor element increases.
  • the above problem becomes apparent because suppressing the reverse leakage current and reducing the surface charge density are prioritized over improving the reverse voltage.
  • the softening point of the glass is significantly increased, so that when coating is performed at a low temperature firing (for example, 900°C or less), the softening fluidity of the glass is impaired, making it difficult to uniformly coat the surface of the semiconductor element.
  • the present invention has been made in consideration of the above circumstances, and its technical objective is to provide a material for coating semiconductor elements that is substantially free of environmentally hazardous substances, enables coating at a baking temperature of 900°C or less, has excellent acid resistance, and has a desired surface charge density.
  • the semiconductor element coating material of the present invention contains 75 to 99.95 mass% of glass powder and 0.05 to 25 mass% of ceramic powder, the glass powder contains, in mole percent, ZnO+SiO 2 40 to 75%, B 2 O 3 7 to 25%, Al 2 O 3 5 to 15%, and MgO 8 to 22% as a glass composition, and is substantially free of lead components, and the ceramic powder contains ZnO and/or MgO.
  • ZnO+SiO 2 refers to the total content of ZnO and SiO 2.
  • substantially free of means that the corresponding component is not intentionally added as a glass component, and does not mean that even impurities that are inevitably mixed in are completely excluded. Specifically, it means that the content of the relevant component, including impurities, is less than 0.1 mass %.
  • the glass powder preferably has a glass composition in which the molar ratio SiO 2 /ZnO is 0.5 to 2.
  • SiO 2 /ZnO is the value obtained by dividing the SiO 2 content by the ZnO content.
  • the glass powder preferably has a glass composition with a molar ratio Al 2 O 3 /(ZnO+SiO 2 ) of 0.08 to 0.3, where "Al 2 O 3 /(ZnO+SiO 2 )" is the value obtained by dividing the content of Al 2 O 3 by the combined content of ZnO and SiO 2 .
  • the semiconductor element coating material of the present invention is preferably sintered to form a sintered body containing Zn 2 SiO 4 as the main crystal by sintering.
  • sintering refers to sintering at 800 to 1000° C. for 10 minutes or more.
  • the semiconductor element covering material of the present invention is preferably sintered to form a sintered body having a thermal expansion coefficient of 20 to 55 ⁇ 10 -7 /° C. in the temperature range of 30 to 300° C.
  • the "thermal expansion coefficient in the temperature range of 30 to 300° C.” refers to a value measured using a push rod type thermal expansion coefficient measuring device.
  • the sintered compact for covering a semiconductor element of the present invention is characterized in that it contains Zn 2 SiO 4 as the main crystal, and the volume ratio of Zn 2 SiO 4 is 5 to 40%.
  • the present invention provides a material for coating semiconductor elements that is substantially free of environmentally hazardous substances, enables coating at a baking temperature of 900°C or less, has excellent acid resistance, and has a desired surface charge density.
  • the semiconductor element coating material of the present invention contains 75 to 99.95 mass% of glass powder and 0.05 to 25 mass% of ceramic powder, preferably 80 to 99.9 mass% of glass powder and 0.1 to 20 mass% of ceramic powder, and particularly preferably 90 to 99.5 mass% of glass powder and 0.5 to 10 mass% of ceramic powder. If the content of glass powder is too small, the softening point is likely to be high. On the other hand, if the content of glass powder is too large, the thermal expansion coefficient is likely to be high. If the content of ceramic powder is too small, it becomes difficult for Zn 2 SiO 4 , which is a high acid resistance and low expansion crystal, to precipitate, the acid resistance is reduced, and the thermal expansion coefficient is likely to be high. On the other hand, if the content of ceramic powder is too large, the softening point is likely to be high.
  • the glass powder has a glass composition, in mole percent, of ZnO+SiO 2 40-75%, B 2 O 3 7-25%, Al 2 O 3 5-15%, and MgO 8-22%, and is characterized by being substantially free of lead components.
  • ZnO and SiO 2 are components that stabilize glass. They are also components of Zn 2 SiO 4.
  • ZnO+SiO 2 is 40-75%, preferably 45-70%, 50-68%, 53-65%, and particularly preferably 55-64%. If the amount of ZnO+SiO 2 is too small, vitrification becomes difficult during melting, and even if vitrification occurs, heterogeneous crystals (unintended crystals) precipitate during firing, inhibiting the softening and flow of glass, making it difficult to uniformly coat the semiconductor element surface. Furthermore, Zn 2 SiO 4 becomes difficult to precipitate, acid resistance decreases, and the thermal expansion coefficient tends to increase. On the other hand, if the amount of ZnO+SiO 2 is too large, the softening point of the glass increases significantly, inhibiting the softening and flow of glass at 900°C or less, making it difficult to uniformly coat the semiconductor element surface.
  • ZnO is a component that stabilizes glass.
  • the content of ZnO is preferably 20 to 40%, 22 to 38%, 24 to 36%, and particularly preferably 26 to 34%. If the content of ZnO is too low, the glass becomes more prone to devitrification during melting, making it difficult to obtain a homogeneous glass. Furthermore, Zn 2 SiO 4 is less likely to precipitate during firing, which reduces the acid resistance and tends to increase the thermal expansion coefficient. On the other hand, if the content of ZnO is too high, the acid resistance tends to decrease.
  • SiO 2 is a glass network forming component, and therefore is a component that stabilizes glass and enhances acid resistance.
  • the content of SiO 2 is preferably 20-40%, 22-38%, 24-36%, and particularly 26-34%. If the content of SiO 2 is too low, Zn 2 SiO 4 is difficult to precipitate, acid resistance is reduced, and the thermal expansion coefficient is likely to be high. On the other hand, if the content of SiO 2 is too high, the softening point of the glass increases significantly, the softening flow of the glass at 900°C or less is inhibited, and it becomes difficult to uniformly coat the surface of the semiconductor element.
  • B 2 O 3 is a component for forming a glass network and for enhancing the softening fluidity.
  • the content of B 2 O 3 is 7-25%, preferably 10-22%, particularly 12-18%. If the content of B 2 O 3 is too low, the crystallinity becomes strong, and the softening fluidity of the glass is impaired during firing, making it difficult to uniformly coat the surface of the semiconductor element. On the other hand, if the content of B 2 O 3 is too high, the thermal expansion coefficient tends to be unduly high and the acid resistance tends to be reduced.
  • Al 2 O 3 is a component that improves acid resistance and adjusts surface charge density.
  • the content of Al 2 O 3 is 5 to 15%, preferably 7 to 14%, 9 to 13%, and particularly preferably 10 to 12%. If the content of Al 2 O 3 is too low, the glass is prone to devitrification and the acid resistance is reduced. On the other hand, if the content of Al 2 O 3 is too high, there is a risk that the surface charge density becomes too large, and there is a risk that the glass is devitrified during melting, making it difficult to melt.
  • MgO is a component that reduces the viscosity of glass.
  • the content of MgO is 8-22%, preferably 9-20%, 10-19%, 11-18%, and especially 12-17%. If there is too little MgO, the firing temperature of the glass tends to increase. On the other hand, if there is too much MgO, the thermal expansion coefficient may become too high, the acid resistance may decrease, and the insulating properties may decrease.
  • the molar ratio of SiO 2 /ZnO in the glass composition is preferably 0.5 to 2, 0.6 to 1.8, 0.8 to 1.6, and particularly preferably 1 to 1.4. If the SiO 2 /ZnO ratio is too small, the acid resistance decreases. On the other hand, if the SiO 2 / ZnO ratio is too large, the softening point of the glass increases significantly, inhibiting the softening and flow of the glass at temperatures of 900° C. or less, making it difficult to uniformly coat the semiconductor element surface.
  • the molar ratio of Al 2 O 3 /(ZnO+SiO 2 ) in the glass composition is preferably 0.08 to 0.3, 0.1 to 0.25, 0.12 to 0.2, and particularly preferably 0.14 to 0.18. If Al 2 O 3 /(ZnO+SiO 2 ) is too small, it is easy for the glass to be difficult to melt. On the other hand, if Al 2 O 3 /(ZnO + SiO 2 ) is too large, the glass stability and acid resistance are easy to decrease.
  • other components e.g., CaO, SrO, BaO, MnO2 , Ta2O5 , Nb2O5 , CeO2 , Sb2O3 , etc.
  • other components e.g., CaO, SrO, BaO, MnO2 , Ta2O5 , Nb2O5 , CeO2 , Sb2O3 , etc.
  • the material contains substantially no lead components (e.g., PbO, etc.) and substantially no Bi2O3 , F, or Cl. It is also preferable that the material contains substantially no alkaline components ( Li2O , Na2O , and K2O ) that adversely affect the surface of semiconductor elements.
  • the average particle diameter D50 of the glass powder is preferably 25 ⁇ m or less, particularly 15 ⁇ m or less. If the average particle diameter D50 of the glass powder is too large, it becomes difficult to make a paste. In addition, powder adhesion by electrophoresis also becomes difficult.
  • the lower limit of the average particle diameter D50 of the glass powder is not particularly limited, but in reality it is 0.1 ⁇ m or more.
  • the "average particle diameter D50" is a value measured on a volume basis, and refers to a value measured by a laser diffraction method.
  • the ceramic powder contains ZnO and/or MgO.
  • ZnO and/or MgO act as nucleating agents, which facilitates precipitation of Zn 2 SiO 4 from the glass powder during firing. Ceramic powders other than ZnO and MgO may also be included.
  • the average particle diameter D50 of the ceramic powder is preferably 25 ⁇ m or less, particularly 15 ⁇ m or less. If the average particle diameter D50 of the ceramic powder is too large, it becomes difficult to make a paste. In addition, powder adhesion by electrophoresis also becomes difficult.
  • the lower limit of the average particle diameter D50 of the ceramic powder is not particularly limited, but in reality it is 0.1 ⁇ m or more.
  • the "average particle diameter D50" is a value measured on a volume basis, and refers to a value measured by a laser diffraction method.
  • the semiconductor element coating material of the present invention is preferably sintered to contain Zn2SiO4 as the main crystal by sintering.
  • Zn2SiO4 has excellent acid resistance, which makes it possible to improve the acid resistance of the semiconductor element coating material.
  • it has a thermal expansion coefficient very close to that of the silicon to be coated, and plays a role in significantly suppressing the occurrence of warping during sintering after coating.
  • crystals such as ZnAl2O4 may be simultaneously contained.
  • the volume ratio of Zn 2 SiO 4 is preferably 5 to 40%, 10 to 38%, 12 to 35%, and particularly preferably 15 to 30%. If the volume ratio of Zn 2 SiO 4 is too small, the acid resistance is likely to decrease. Also, the thermal expansion coefficient becomes too high, and the warping of the sintered body becomes large. On the other hand, if the volume ratio of Zn 2 SiO 4 is too large, the viscosity of the glass increases rapidly above the softening point, and defects such as bubbles tend to be included.
  • the "volume ratio of Zn 2 SiO 4" refers to a value measured by the method described in the Examples section below.
  • the material is sintered to have a thermal expansion coefficient of 20 to 55 ⁇ 10 ⁇ 7 /° C., particularly 30 to 50 ⁇ 10 ⁇ 7 /° C., in the temperature range of 30 to 300° C. If the thermal expansion coefficient is outside the above range, cracks, warping, etc. are likely to occur due to the difference in thermal expansion coefficient with the semiconductor element.
  • the surface charge density of the sintered body is 12 ⁇ 10 11 /cm 2 or less, particularly 10 ⁇ 10 11 /cm 2 or less. If the surface charge density is too high, the withstand voltage increases, but at the same time, the leakage current also tends to increase.
  • the "surface charge density” refers to a value measured by the method described in the Examples section below.
  • raw material powders mixed to obtain the desired glass composition are melted at 1300-1550°C for 1-2 hours until a homogeneous glass is obtained.
  • the resulting molten glass is then formed into a film or other shape, which is then crushed and classified to produce glass powder.
  • Ceramic powder is then added to and mixed with the glass powder to produce a material for coating semiconductor elements.
  • the semiconductor element covering material is covered on the surface of the semiconductor element by, for example, a paste method, an electrophoretic coating method, etc. Then, by performing sintering, the semiconductor element covering material covering the surface of the semiconductor element becomes a sintered body for covering a semiconductor element, which contains Zn 2 SiO 4 as the main crystal and has a volume ratio of Zn 2 SiO 4 of 5 to 40%.
  • the sintered body for covering a semiconductor element preferably has the same composition range as the glass composition of the glass powder in the semiconductor element covering material.
  • Table 1 shows examples of the present invention (samples No. 1 to 4) and a comparative example (sample No. 5).
  • Each sample was prepared as follows: First, raw material powders were mixed to obtain the glass composition shown in the table, and the mixture was melted at 1500° C. for 1 hour to vitrify the glass. The molten glass was then formed into a film, which was then pulverized in a ball mill and classified using a 350 mesh sieve to obtain a glass powder with an average particle size D50 of 12 ⁇ m.
  • the obtained glass powder and ceramic powder were mixed as shown in the table to obtain a material for coating a semiconductor element.
  • the average particle diameter D50 of the ZnO powder and the MgO powder was 12 ⁇ m.
  • the sintered bodies prepared by firing each sample at the firing temperature in the table were evaluated for the volume ratio of Zn 2 SiO 4 , the thermal expansion coefficient, the surface charge density, and the acid resistance. The results are shown in Table 1.
  • the volume ratio of Zn2SiO4 was measured as follows: Each sample was molded into a button shape, fired at the firing temperature in the table (retention time 10 minutes), and crushed in a mortar, and diffraction peaks were obtained using an X-ray diffractometer. After background removal, the integrated intensity of the peaks attributable to Zn2SiO4 was divided by the total integrated intensity of the peaks attributable to crystals and the peaks attributable to glass.
  • the thermal expansion coefficient was measured using samples fired at the firing temperatures in the table (holding time 10 minutes) and using a push rod type thermal expansion coefficient measuring device to measure the value in the temperature range of 30 to 300°C.
  • the surface charge density was measured as follows. First, each sample was dispersed in an organic solvent and attached to the surface of a silicon substrate by electrophoresis to a constant film thickness, and then sintered at the sintering temperature in the table (holding time 10 minutes) to form a sintered body for coating semiconductor elements. Next, an aluminum electrode was formed on the surface of the sintered body for coating semiconductor elements, and the change in electrical capacitance in the sintered body for coating semiconductor elements was measured using a C-V meter to calculate the surface charge density.
  • the acid resistance was evaluated as follows. Each sample was press molded to a size of about 20 mm in diameter and 4 mm in thickness, and then fired at the firing temperature in the table (retention time 10 minutes) to prepare a pellet-shaped sample. The sample was immersed in 30% nitric acid at 25°C for 1 minute, and the mass change per unit area was calculated from the mass loss, which was used as an index of acid resistance. A mass change per unit area of less than 1.0 mg/ cm2 was judged as " ⁇ ", and a mass change of 1.0 mg/cm2 or more was judged as " ⁇ ".
  • Samples No. 1 to 4 had a surface charge density of 7 ⁇ 10 11 /cm 2 or less, and were also evaluated as having good acid resistance. Therefore, Samples No. 1 to 4 are considered to be suitable as semiconductor element coating materials used to coat low-voltage semiconductor elements.
  • sample No. 5 did not contain ceramic powder and Zn 2 SiO 4 did not precipitate, so its acid resistance was low.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

L'invention concerne un matériau pour revêtir un élément semi-conducteur qui est sensiblement exempt de substances présentant un impact environnemental et a une excellente résistance aux acides et une densité de charge de surface souhaitée tout en permettant un dépôt à une température de cuisson de 900 °C ou moins.　Le matériau pour revêtir un élément semi-conducteur selon la présente invention est caractérisé en ce qu'il contient 75 à 99,95 % en masse de poudre de verre et 0,05 à 25 % en masse de poudre céramique, la poudre de verre contenant, en tant que composition de verre, en % en moles, 40 à 75 % de ZnO+SiO2, 7 à 25 % de B2O3, 5 à 15 % d'Al2O3, et 8 à 22 % de MgO et étant sensiblement exempte de composants de plomb, et la poudre céramique contenant du ZnO et/ou du MgO.
PCT/JP2024/020387 2023-06-08 2024-06-04 Matériau pour revêtir un élément semi-conducteur, et corps fritté pour revêtir un élément semi-conducteur Pending WO2024253095A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025526115A JPWO2024253095A1 (fr) 2023-06-08 2024-06-04

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-094621 2023-06-08
JP2023094621 2023-06-08

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WO2024253095A1 true WO2024253095A1 (fr) 2024-12-12

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JP (1) JPWO2024253095A1 (fr)
TW (1) TW202448819A (fr)
WO (1) WO2024253095A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060944A (ja) * 1983-09-08 1985-04-08 Nippon Electric Glass Co Ltd 半導体被覆用ガラス
JPH03153545A (ja) * 1989-11-13 1991-07-01 Nippon Electric Glass Co Ltd 半導体被覆用ガラス
WO2012133217A1 (fr) * 2011-03-25 2012-10-04 日本山村硝子株式会社 Composition de verre pour scellement, et matériau d'étanchéité
WO2020158187A1 (fr) * 2019-01-29 2020-08-06 日本電気硝子株式会社 Verre pour revêtement d'élément semi-conducteur et matériau pour revêtement semi-conducteur l'utilisant
WO2021149633A1 (fr) * 2020-01-21 2021-07-29 日本山村硝子株式会社 Verre d'étanchéité/revêtement à faible capacité de dilatation thermique
WO2024004711A1 (fr) * 2022-06-29 2024-01-04 日本電気硝子株式会社 Verre pour recouvrir un élément semi-conducteur, matériau pour recouvrir un élément semi-conducteur, et corps fritté pour recouvrir un élément semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060944A (ja) * 1983-09-08 1985-04-08 Nippon Electric Glass Co Ltd 半導体被覆用ガラス
JPH03153545A (ja) * 1989-11-13 1991-07-01 Nippon Electric Glass Co Ltd 半導体被覆用ガラス
WO2012133217A1 (fr) * 2011-03-25 2012-10-04 日本山村硝子株式会社 Composition de verre pour scellement, et matériau d'étanchéité
WO2020158187A1 (fr) * 2019-01-29 2020-08-06 日本電気硝子株式会社 Verre pour revêtement d'élément semi-conducteur et matériau pour revêtement semi-conducteur l'utilisant
WO2021149633A1 (fr) * 2020-01-21 2021-07-29 日本山村硝子株式会社 Verre d'étanchéité/revêtement à faible capacité de dilatation thermique
WO2024004711A1 (fr) * 2022-06-29 2024-01-04 日本電気硝子株式会社 Verre pour recouvrir un élément semi-conducteur, matériau pour recouvrir un élément semi-conducteur, et corps fritté pour recouvrir un élément semi-conducteur

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TW202448819A (zh) 2024-12-16

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