WO2024253313A1 - Dispositif de génération de plasma et procédé permettant de régler la position d'une région ecr - Google Patents

Dispositif de génération de plasma et procédé permettant de régler la position d'une région ecr Download PDF

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Publication number
WO2024253313A1
WO2024253313A1 PCT/KR2024/004876 KR2024004876W WO2024253313A1 WO 2024253313 A1 WO2024253313 A1 WO 2024253313A1 KR 2024004876 W KR2024004876 W KR 2024004876W WO 2024253313 A1 WO2024253313 A1 WO 2024253313A1
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magnetic field
chamber
plasma
coil
generated
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English (en)
Korean (ko)
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정영재
하우
정진욱
장이랑
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Industry University Cooperation Foundation IUCF HYU
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Industry University Cooperation Foundation IUCF HYU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Definitions

  • the present invention relates to a plasma generating device and method capable of controlling the position at which an ECR region is generated, and more specifically, to a technology for controlling the position of an ECR region inside a chamber by using a magnetic field generating module that generates an external magnetic field.
  • Plasma is an ionized gas composed of positive ions, negative ions, electrons, excited atoms, molecules, and chemically highly active radicals. It has electrical and thermal properties that are very different from those of ordinary gases, so it is also called the fourth state of matter. Since this plasma contains ionized gas, it is very useful in the semiconductor manufacturing process, such as accelerating it using electric or magnetic fields, or causing a chemical reaction to clean, etch, or deposit wafers or substrates.
  • An inductively coupled plasma (ICP) generator is a device that generates high-density plasma. It introduces a processing gas into a chamber where plasma is generated, and applies high-frequency power through a high-frequency antenna positioned near a dielectric window formed at the top of the chamber, thereby forming an induced electric field within the chamber via the dielectric window.
  • ICP inductively coupled plasma
  • the resulting induced electric field ionizes the process gas to generate plasma that is inductively coupled to the antenna.
  • This plasma cleans, etches, or deposits objects such as semiconductor wafers or substrates mounted on the lower electrode.
  • ICP generation devices since the magnetic field formed within the chamber is generated with a uniform size, there is a problem in that it is difficult to control the location where the ECR region is generated according to various situations because ECR cannot be generated only in a specific region.
  • a plasma generating device and method capable of controlling the position of an ECR region is an invention designed to solve the above-described problem, and its purpose is to control the ECR region inside a chamber using an RF power source and a magnetic field generating module.
  • the purpose is to effectively control the semiconductor process by locally controlling the ECR region to improve the plasma density and radical density of a specific region inside the chamber.
  • a plasma generating device may include a chamber forming a space where plasma is generated, an antenna disposed on one side of the chamber and connected to an RF power source to generate an induced electric field and a magnetic field and apply the generated induced electric field and magnetic field to the chamber, a magnetic field generating module including a coil disposed outside the chamber and applying an external magnetic field generated by a current flowing in the coil to the chamber, and a control unit applying a current to the coil to generate an ECR region within the chamber.
  • the above control unit can control the position where the ECR region is generated by controlling the size of the current applied to the coil.
  • the above control unit can control the size of the current applied to the coil so that the position at which the ECR region is generated varies along the axial direction of the chamber.
  • the external magnetic field generated by the magnetic field generating module may have a gradient vector.
  • the above magnetic field generating module includes a first magnetic field generating module disposed at an upper portion of the chamber and a second magnetic field generating module disposed at a lower portion of the chamber, and the control unit can control the size and phase of current applied to the first magnetic field generating module and the second magnetic field generating module, respectively.
  • the above control unit can control differently the size of the current applied to the first magnetic field generating module and the size of the current applied to the second magnetic field generating module.
  • the above control unit can control the position where the ECR region is generated by controlling the magnitude of the current applied to the first coil and the second coil so that the current applied to the first coil of the first magnetic field generating module is constant and the current applied to the second coil of the second magnetic field generating module is changed.
  • the above plasma generating device further includes a substrate placed inside the chamber, and the control unit can control a position at which the ECR region is generated based on a position of the substrate.
  • a plasma generating device may include a chamber forming a space where plasma is generated, an antenna disposed on one side of the chamber and connected to an RF power source to generate an induced electric field and a magnetic field and apply the generated induced electric field and magnetic field to the chamber, a magnetic field generating module disposed on the side of the chamber including a coil disposed outside the chamber and applying an external magnetic field generated by a current flowing in the coil to the chamber, and a control unit applying a current to the coil to generate an ECR region within the chamber.
  • the above control unit can adjust the size of the current applied to the coil so that the position at which the ECR region is generated varies along the horizontal direction of the chamber.
  • the above magnetic field generating module may include a first magnetic field generating module disposed on one side of the chamber and a second magnetic field generating module disposed on the other side of the chamber so as to face the first magnetic field generating module.
  • a plasma generation method may include a plasma generation step of generating an induced electric field and a magnetic field using RF power at one side of a chamber forming a space where plasma is generated and applying the induced electric field and magnetic field to the chamber, a plasma resonance step of generating an external magnetic field using a magnetic field generation module disposed outside the chamber and including a coil and applying the generated external magnetic field to the chamber, and an ECR region control step of controlling a size of a current applied to the coil of the magnetic field generation module by a control unit to control a position where an ECR region is generated within the chamber.
  • the above ECR region control step may include controlling the size of the current applied to the coil by the control unit so that the position at which the ECR region is generated varies along the axial direction of the chamber.
  • the above ECR region control step may include the control unit controlling the magnitude of the current applied to the first coil and the second coil so that the magnitude of the current applied to the first coil of the first magnetic field generating module disposed at the upper portion of the chamber is constant, and the magnitude of the current applied to the coil of the second magnetic field generating module disposed at the lower portion of the chamber is variable.
  • the above ECR region control step may include the control unit controlling the magnitude of the current applied to the first coil and the second coil so that the magnitude of the current applied to the first coil and the magnitude of the current applied to the second coil are different.
  • a plasma generation device and method capable of controlling the position of an ECR region has an advantage in that the position at which an ECR region is generated can be controlled by controlling the intensity of a magnetic field generated by a magnetic field generating module so as to have the same frequency as the driving frequency of an RF power source.
  • the plasma generation device and method capable of controlling the position of an ECR region can improve plasma density and radical density in a specific region by controlling the position where the ECR region is generated, so there is an advantage in that the plasma process can be precisely controlled.
  • the volume of the magnetic field generation module can be compactly formed and power consumption can be reduced by using RF power as a driving source for generating ECR plasma.
  • Figure 1 is a drawing illustrating the rotational motion of electrons under ECR conditions according to the prior art.
  • Figure 2 is a diagram illustrating the principle of electrons obtaining energy by an electric field under ECR conditions according to conventional technology.
  • FIG. 3 is a schematic diagram illustrating a plasma generating device capable of controlling the position of an ECR region according to one embodiment of the disclosed invention.
  • Fig. 4 is a cross-sectional view of a plasma generating device capable of controlling the position of the ECR region illustrated in Fig. 3.
  • FIG. 5 is a drawing illustrating some components of a plasma generating device capable of controlling the position of an ECR region according to one embodiment of the disclosed invention.
  • FIG. 6 is a flowchart of a plasma generation method capable of controlling the position of an ECR region according to one embodiment of the disclosed invention.
  • FIG. 7 is a schematic diagram illustrating a plasma generating device capable of controlling the position of an ECR region according to another embodiment of the disclosed invention.
  • Fig. 8 is a cross-sectional view of a plasma generating device capable of controlling the position of the ECR region illustrated in Fig. 7.
  • FIG. 9 is an experimental result showing that the location where an ECR region is generated changes by controlling the current flowing in the coil of a magnetic field generating module according to an embodiment of a plasma generating device and method according to the disclosed invention.
  • FIG. 10 is an experimental result showing that the electron temperature changes according to the location inside the chamber by controlling the current flowing in the coil of the magnetic field generating module according to one embodiment of the disclosed invention, a plasma generating device and method.
  • FIG. 11 is a distribution diagram showing the density of plasma ions according to the position inside the chamber when there is no magnetic field generating module of the plasma generating device according to one embodiment of the disclosed invention.
  • FIG. 12 is a distribution diagram showing the density of plasma ions according to the position inside the chamber when there is a magnetic field generating module of a plasma generating device according to one embodiment of the disclosed invention.
  • FIG. 13 is a photograph comparing the amount of light emitted by plasma depending on the presence or absence of a magnetic field generating module of a plasma generating device according to one embodiment of the disclosed invention.
  • the first component could be referred to as the second component, and similarly, the second component could also be referred to as the first component.
  • the term "and/or" includes any combination of a plurality of related listed items or any item among a plurality of related listed items.
  • Fig. 1 is a diagram illustrating the rotational motion of electrons under ECR conditions according to a prior art.
  • Fig. 2 is a diagram illustrating the principle by which electrons obtain energy by an electric field under ECR conditions according to a prior art.
  • a low-pressure gas is injected into a chamber (10) of a plasma generating device, and voltage is applied to an antenna (30) so that plasma can be generated inside the chamber (10) by induction heating.
  • Plasma is an ionized gas that can be composed of neutral elements, electrons, ions, excited neutral elements, radicals, and photons, and can also be defined as the fourth state of matter.
  • Plasma can have quasi-neutral properties, in which the density of electrons and the density of ions exist in a state in which they are nearly equal.
  • Plasma is neutral overall, but it can be conductive as the charge moves due to the presence of electrons and ions inside it, which are caused by an electric field.
  • the electrons of the plasma are subjected to the Lorentz force by the induced magnetic field and perform circular motion around the magnetic field lines.
  • the electrons can perform rotational motion as shown in Fig. 1.
  • ECR electron cyclotron resonance
  • gas molecules that have gained energy and collide with accelerated electrons can be ionized, and high-density plasma can be generated.
  • FIG. 3 is a schematic diagram illustrating a plasma generating device capable of adjusting the position of an ECR region according to one embodiment of the disclosed invention.
  • FIG. 4 is a cross-sectional diagram of the plasma generating device capable of adjusting the position of an ECR region illustrated in FIG. 3.
  • FIG. 5 is a diagram illustrating some components of the plasma generating device capable of adjusting the position of an ECR region according to one embodiment of the disclosed invention.
  • a plasma generating device (1) may include a chamber (10), which is a main body forming a space where plasma is generated, an RF power source (20), a plurality of antennas (30) arranged on one side of the chamber (10) to generate plasma, an impedance matching unit (40) connected to the antenna (30) to match the impedance of the antenna (30), a substrate (40) on which a plasma process is performed, a plasma state measuring unit (60) capable of measuring various variables of plasma within the chamber (10), a pumping system (70) configured to pump a source gas, etc. that is a source of plasma generation, and a magnetic field generating module (100) that generates an external magnetic field and applies the same to the chamber (10).
  • the plasma generating device (1) can process a substrate (40) placed inside a chamber (10) using plasma.
  • the plasma generating device (1) can perform an etching process, a deposition process, an etching process, an ion implantation process, etc. on the substrate (40) using plasma.
  • a device that generates plasma using a plurality of antennas (30) can be defined as an inductively coupled plasma (ICP) generating device. That is, the plasma generating device (1) according to the disclosed invention can be implemented as an inductively coupled plasma (ICP) using radio frequency (RF).
  • ICP inductively coupled plasma
  • RF radio frequency
  • the chamber (10) can provide a space where a substrate (40) is positioned and a process is performed.
  • the chamber (10) can be provided with a conductive material such as aluminum, stainless steel, etc.
  • the chamber (10) can be provided in a grounded state.
  • the chamber (10) can include a hole for supplying a gas to be used for the process treatment of the substrate (40) to the internal space.
  • an exhaust hole for discharging a gas, reaction by-products, etc. in the internal space can be formed in the chamber (10).
  • the disclosed invention includes content related to controlling the position where an ECR region is generated within a chamber (10) by using a magnetic field generation module (100) in an inductively coupled plasma generator (ICP).
  • ICP inductively coupled plasma generator
  • the plasma generating device (1) can control the position where the ECR region is generated along the axial direction. Details related to this will be described later.
  • the chamber (10) can be defined as a main body that forms a space in which a workpiece requiring plasma processing, such as a substrate (40), is provided and a space in which plasma is generated.
  • a plurality of antennas (30) for generating plasma may be installed at the upper part of the chamber (10), and the plurality of antennas (30) may be connected to an impedance matching unit (40).
  • the impedance matching unit (40) may be connected to an RF power source (20) that supplies power to the plasma generating device (1) and the chamber (10), respectively.
  • the antenna (30) is placed on one side of the chamber (10), and an RF power source (20) is connected so as to generate an induced electric field and a magnetic field, and the generated induced electric field and magnetic field can be applied to the chamber (10).
  • a pumping system (70) for pumping a source gas or the like that serves as a plasma generation source can be formed at the bottom of the chamber (10).
  • the plasma state measurement unit (60) can measure various variables of plasma generated inside the chamber (10). Variables as used herein mean various chemical and physical characteristics related to plasma.
  • variables refer to the density of plasma inside the chamber (10), the density of ions and electrons, the temperature of electrons, the energy probability distribution of electrons, etc.
  • the plasma state measuring unit (60) can measure these variables.
  • the plasma state measuring unit (60) illustrated in Fig. 4 is illustrated as penetrating one wall surface of the plasma generating device (1), but the shape of the plasma state measuring unit (60) is not limited thereto and may be configured as a device capable of wireless variable measurement.
  • the magnetic field generating module (100) may include a coil that is placed outside the chamber (10) and to which a current is applied. More specifically, an external magnetic field generated by a current flowing in the coil of the magnetic field generating module (100) may be applied to the chamber (10).
  • control unit (C) can control various components of the plasma generation device (1). Specifically, the control unit (C) can control the RF power source (20) that applies voltage to the plasma generation device (1), thereby controlling the size and phase of the voltage applied to the plasma generation device (1).
  • control unit (C) can generate an ECR region within the chamber (10) by applying current to the coil of the magnetic field generation module (100).
  • control unit (C) can control the amount or density of plasma generated by the plasma generating device (1) by adjusting the size of the impedance of the impedance matching unit (40).
  • control unit (C) may be implemented as a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), a programmable logic unit (PLU), a microprocessor, or a device capable of executing and responding to instructions.
  • ALU arithmetic logic unit
  • FPA field programmable array
  • PLU programmable logic unit
  • microprocessor or a device capable of executing and responding to instructions.
  • the size of the current applied to the coil of the magnetic field generation module (100) can be controlled by the control unit (C). Specifically, the control unit (C) can apply current to the coil to generate an ECR region within the chamber (10) and control the location where the ECR region is generated.
  • control unit (C) can control the size of the current applied to the coil so that the location where the ECR region is generated varies along the axial direction of the chamber (10).
  • the external magnetic field generated by the magnetic field generation module (100) may have a gradient vector.
  • control unit (C) can control the current applied to the coil so that the intensity of the external magnetic field generated by the magnetic field generating module (100) satisfies the ECR condition.
  • the intensity of the external magnetic field generated by the magnetic field generating module (100) can be formed differently depending on the location within the chamber (10). For example, the intensity of the external magnetic field generated by the magnetic field generating module (100) can become stronger as it goes toward the upper part of the chamber (10).
  • the external magnetic field generated by the magnetic field generating module (100) has a variable size along the axial direction of the chamber (10), and the rotational frequency of electrons rotating by the Lorenz force in a specific region of the chamber (10) becomes the same as the frequency of the magnetic field, so that resonance can occur. Accordingly, an ECR region having a magnetic field of a specific range can be generated at a specific location inside the chamber (10).
  • the plasma generating device (1) can control the size of an external magnetic field generated by the magnetic field generating module (100) by controlling the size of the current applied to the coil of the magnetic field generating module (100) by the control unit, and can adjust the position of the ECR region where resonance of the plasma inside the chamber (10) occurs.
  • control unit (C) can adjust the position where the ECR region is generated based on the position of the substrate (40). Accordingly, the plasma generating device (1) according to one embodiment of the disclosed invention can generate plasma with a high radical density in an area adjacent to the substrate (40) by adjusting the position where the ECR region is generated according to various situations, thereby providing a technical effect of obtaining a more improved plasma process result.
  • FIG. 6 is a flowchart of a plasma generation method capable of controlling the position of an ECR region according to one embodiment of the disclosed invention.
  • the plasma generation method according to the disclosed invention may include a plasma generation step (S110) of generating an induced electric field and a magnetic field using an RF power source (20).
  • the plasma generation step (S110) may include a step of generating an induced electric field and a magnetic field by an RF power source (20) on one side of a chamber (10) forming a space where plasma is generated and applying the generated electric field and magnetic field to the chamber (10).
  • the plasma generation method according to the disclosed invention may include a step (S120) of generating an external magnetic field by applying a current to a coil of a magnetic field generation module (100). This may be referred to as a plasma resonance step.
  • the plasma resonance step may include a step of applying an external magnetic field generated by a coil of a magnetic field generation module (100) to a chamber (10).
  • the plasma generation method according to the disclosed invention may include a step (S130) of controlling the size of the current applied to the coil of the magnetic field generation module (100). More specifically, the disclosed invention can control the size of the current applied to the coil of the magnetic field generation module (100) by the control unit (C) of the plasma generation device (1).
  • the plasma generation method according to the disclosed invention may include a step (S140) in which an external magnetic field is adjusted based on the size of the current.
  • the disclosed invention can adjust the strength of an external magnetic field of a magnetic field generation module (100) based on the size of the current applied to the coil by the control unit of the plasma generation device (1).
  • the plasma generation method according to the disclosed invention may include a step (S150) of controlling a position where an ECR region is generated within a chamber (10). Since the ECR region can be formed in a magnetic field having a specific strength, a position satisfying an ECR condition may vary within the chamber (10) depending on the strength of an external magnetic field generated by a magnetic field generation module (100).
  • the step of controlling the size of the current applied to the coil (S130), the step of controlling the strength of the external magnetic field based thereon (S140), and the step of controlling the position where the ECR region is generated (S150) can be performed continuously and can be collectively called the ECR region controlling step.
  • FIG. 7 is a schematic diagram illustrating a plasma generating device capable of adjusting the position of an ECR region according to another embodiment of the disclosed invention.
  • FIG. 8 is a cross-sectional diagram of the plasma generating device capable of adjusting the position of an ECR region illustrated in FIG. 7.
  • a plasma generating device (1a) may include a chamber (10a), which is a main body forming a space where plasma is generated, an RF power source (20a), a plurality of antennas (30a) arranged on one side of the chamber (10a) to generate plasma, an impedance matching unit (40a) connected to the antenna (30a) to match the impedance of the antenna (30a), a substrate (50a) on which a plasma process is performed, a plasma state measuring unit (60a) capable of measuring various variables of plasma within the chamber (10a), a pumping system (70a) configured to pump a source gas or the like that serves as a source of plasma generation, and a first magnetic field generating module (110a) and a second magnetic field generating module (120a) that generate an external magnetic field and apply the same to the chamber (10a).
  • a plasma generating device (1a) according to another embodiment of the disclosed invention may, unlike the plasma generating device (1) according to one embodiment of the disclosed invention, include two magnetic field generating modules respectively disposed at the upper and lower portions of the chamber (10a).
  • the plasma generating device (1a) can process a substrate (50a) placed inside a chamber (10a) using plasma.
  • the plasma generating device (1a) can perform an etching process, a deposition process, an etching process, an ion implantation process, etc. on the substrate (50a) using plasma.
  • a device that generates plasma using a plurality of antennas (30a) can be defined as an inductively coupled plasma (ICP) generating device. That is, the plasma generating device (1a) according to the disclosed invention can be implemented as an inductively coupled plasma (ICP) using radio frequency (RF).
  • ICP inductively coupled plasma
  • RF radio frequency
  • the chamber (10a) can provide a space where a substrate (50a) is positioned and a process is performed.
  • the chamber (10a) can be provided with a conductive material such as aluminum, stainless steel, etc.
  • the chamber (10a) can be provided in a grounded state.
  • the chamber (10a) can include a hole for supplying a gas to be used for the process treatment of the substrate (50a) to the internal space.
  • an exhaust hole for discharging a gas, reaction by-products, etc. in the internal space can be formed in the chamber (10a).
  • the disclosed invention includes content related to controlling the position where an ECR region is generated within a chamber (10a) by using a magnetic field generation module in an inductively coupled plasma generator (ICP).
  • ICP inductively coupled plasma generator
  • the plasma generating device (1a) can control the position where the ECR region is generated along the axial direction. Details related to this will be described later.
  • the chamber (10a) can be defined as a main body that forms a space in which a workpiece requiring plasma processing, such as a substrate (50a), is provided and a space in which plasma is generated.
  • a plurality of antennas (30a) for generating plasma may be installed at the upper portion of the chamber (10a), and the plurality of antennas (30a) may be connected to an impedance matching unit (40a).
  • the impedance matching unit (40a) may be connected to an RF power source (20A) that supplies power to the plasma generating device (1a) and the chamber (10a), respectively.
  • the antenna (30a) is placed on one side of the chamber (10a), and an RF power source is connected so that an induced electric field and a magnetic field can be generated, and the generated induced electric field and magnetic field can be applied to the chamber (10a).
  • a pumping system (70a) that pumps a source gas or the like that serves as a plasma generation source can be formed at the bottom of the chamber (10a).
  • the plasma state measurement unit (60a) can measure various variables of plasma generated inside the chamber (10a). Variables as used herein mean various chemical and physical characteristics related to plasma.
  • variables refer to the density of plasma inside the chamber (10a), the density of ions and electrons, the temperature of electrons, the energy probability distribution of electrons, etc.
  • the plasma state measuring unit (60a) can measure these variables.
  • the plasma state measuring unit (60a) illustrated in Fig. 4 is illustrated as penetrating one wall surface of the plasma generating device (1a), but the shape of the plasma state measuring unit (60a) is not limited thereto and may be configured as a device capable of wireless variable measurement.
  • a first magnetic field generating module (110a) may be disposed outside the chamber (10a) and may include a first coil to which a current is applied.
  • a second magnetic field generating module (120a) may be disposed outside the chamber (10a) and may include a second coil to which a current is applied.
  • the first magnetic field generating module (110a) can be placed at the upper part of the chamber (10a), and the second magnetic field generating module (120a) can be placed at the lower part of the chamber (10a).
  • an external magnetic field generated by current flowing through the first coil and the second coil of the first magnetic field generating module (110a) and the second magnetic field generating module (120a) can be applied to the chamber (10a), respectively.
  • the control unit (C) controls the RF power source (20a) that applies voltage to the plasma generating device (1a), thereby controlling the size and phase of the voltage applied to the plasma generating device (1a).
  • the plasma generating device (1a) can control the position where the ECR region is generated within the chamber (10a) depending on the distance between the first magnetic field generating module (110a) and the second magnetic field generating module (120a).
  • control unit (C) can generate an ECR region within the chamber (10a) by applying current to the first coil of the first magnetic field generating module (110a) and the second coil of the second magnetic field generating module (120a).
  • the size of the current applied to the coil of the magnetic field generating module can be controlled by the control unit (C). Specifically, the control unit (C) can control the size and phase of the current applied to the first magnetic field generating module (110a) and the second magnetic field generating module (120a), respectively.
  • control unit (C) can generate an ECR region within the chamber (10a) by applying different currents to the first coil and the second coil, and can control the position at which the ECR region is generated. More specifically, the control unit (C) can control the size of the current applied to the first magnetic field generating module (110a) and the size of the current applied to the second magnetic field generating module (120a) differently.
  • control unit (C) can control the position where the ECR region is generated by controlling the size of the current applied to the first coil and the second coil so that the current applied to the first coil of the first magnetic field generating module (110a) is kept constant and the current applied to the second coil of the second magnetic field generating module (120a) is varied.
  • the size of the current applied to the first coil can always be formed to be larger than the size of the current applied to the second coil.
  • the current size control method by the control unit (C) is not limited to this, and conversely, the current applied to the second coil of the second magnetic field generating module (120a) is maintained constant, and the current applied to the first coil of the first magnetic field generating module (110a) is varied, thereby controlling the size of the current applied to the first coil and the second coil, thereby controlling the position where the ECR region is generated.
  • control unit (C) can control the size of the current applied to the coil so that the location where the ECR region is generated can vary along the axial direction of the chamber (10a), and the external magnetic field generated by the magnetic field generation module can have a gradient vector.
  • control unit (C) can control the current applied to the first coil and the second coil so that the strength of the summed external magnetic field generated by the first magnetic field generating module (110a) and the second magnetic field generating module (120a) satisfies the ECR condition.
  • the strength of the summed external magnetic field generated by the first magnetic field generating module (110a) and the second magnetic field generating module (120a) can be formed differently depending on the location within the chamber (10a). For example, the strength of the summed external magnetic field generated by the first magnetic field generating module (110a) and the second magnetic field generating module (120a) can become stronger as it goes toward the upper part of the chamber (10a).
  • the combined external magnetic field generated by the plurality of magnetic field generating modules varies in size along the axial direction of the chamber (10a), and the rotational frequency of the electrons rotating by the Lorenz force in a specific region of the chamber (10a) becomes the same as the frequency of the magnetic field, so that resonance can occur. Accordingly, an ECR region having a magnetic field in a specific range can be generated at a specific location inside the chamber (10a).
  • the plasma generating device (1a) can control the size of the combined external magnetic field generated by the plurality of magnetic field generating modules by controlling the size of the current applied to the first coil and the second coil of the first magnetic field generating module (110a) and the second magnetic field generating module (120a) by the control unit (C), and can adjust the position of the ECR region where the resonance of the plasma inside the chamber (10a) occurs.
  • the plasma generating device (1a) according to another embodiment of the disclosed invention has an advantage of enabling more detailed magnetic field control than the plasma generating device (1) according to one embodiment of the disclosed invention by controlling the intensity of the magnetic field using the plurality of magnetic field generating modules.
  • FIG. 9 is an experimental result showing that the location where an ECR region is generated changes by controlling the current flowing in the coil of a magnetic field generating module according to one embodiment of a plasma generating device and method according to the disclosed invention.
  • the magnitude of the current flowing in the first coil of the first magnetic field generating module (110a) is controlled to be constant, and the magnitude of the current flowing in the second coil of the second magnetic field generating module (120a) is controlled to 0.6 A, 0.8 A, 1.0 A, 1.2 A, and 1.4 A, respectively, so that it can be confirmed that the strength of the magnetic field changes from the substrate to the upper part of the chamber.
  • the magnitude of the current flowing in the first coil is 7.6 A.
  • a magnetic field strength satisfying the ECR condition can be formed at a height of approximately 65 mm from the substrate.
  • an ECR region can be generated at a height of 65 mm from the substrate.
  • a magnetic field strength satisfying the ECR condition can be formed at a height of 25 mm from the substrate.
  • an ECR region can be generated at a height of 25 mm from the substrate.
  • the plasma generating device can adjust the position so that an ECR region is generated at a specific position inside the chamber by controlling the size of the current flowing in the coil of the magnetic field generating module.
  • FIG. 10 is an experimental result showing that the electron temperature changes according to the location inside the chamber by controlling the current flowing in the coil of the magnetic field generating module according to one embodiment of the plasma generating device and method of the disclosed invention.
  • the electron temperature changes based on the size of the current applied to the second coil according to each distance in the axial direction from the substrate under the same conditions as the experiment of Fig. 10.
  • the electron temperature is a measure of the activity of the plasma and is an indicator related to the generation of the ECR region.
  • the electron temperature can be measured to be maximum when the size of the current applied to the second coil is 1.4 A.
  • the size of the current applied to the first coil is set to 7.6 A and the size of the current applied to the second coil is set to 1.4 A, it can be interpreted that the ECR region is generated at a height of 5 mm in the axial direction from the substrate.
  • FIG. 11 is a distribution diagram showing the density of plasma ions according to the position inside the chamber when there is no magnetic field generating module of the plasma generating device according to one embodiment of the disclosed invention.
  • FIG. 12 is a distribution diagram showing the density of plasma ions according to the position inside the chamber when there is a magnetic field generating module of the plasma generating device according to one embodiment of the disclosed invention.
  • plasma ions are formed with a uniform density inside the chamber, but it can be confirmed that the plasma with the highest density is very small and distributed in one area of the chamber.
  • a high-density plasma can be formed in a specific area inside a chamber through a plasma generating device and method according to an embodiment of the disclosed invention.
  • FIG. 13 is a photograph comparing the amount of light emitted by plasma depending on the presence or absence of a magnetic field generating module of a plasma generating device according to one embodiment of the disclosed invention.
  • the electron temperature and density may increase in a specific region, thereby increasing the amount of light. That is, it can be confirmed through Fig. 14 that the intensity of light of plasma generated by the plasma generating device according to the disclosed invention is increased, thereby generating a higher density and higher activity plasma than before.
  • the plasma generating device can achieve ECR conditions even with a magnetic field strength of about several tens of Gauss by using RF power, so there is a technical effect that can minimize the volume of the magnetic field generating module and achieve the purpose of power reduction accordingly.
  • a plasma generation device and method capable of controlling the position of an ECR region has an advantage in that the position at which an ECR region is generated can be controlled by controlling the intensity of a magnetic field generated by a magnetic field generating module so as to have the same frequency as the driving frequency of an RF power source.
  • the plasma generation device and method capable of controlling the position of an ECR region can improve plasma density and radical density in a specific region by controlling the position where the ECR region is generated, so there is an advantage in that the plasma process can be precisely controlled.
  • the volume of the magnetic field generation module can be formed compactly and power consumption can be reduced by using RF power as a driving source for generating ECR plasma.
  • the devices described above may be implemented using hardware components, software components, and/or a combination of hardware components and software components.
  • the devices and components described in the embodiments may be implemented using one or more general-purpose computers or special-purpose computers, such as, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), a programmable logic unit (PLU), a microprocessor, or any other device capable of executing instructions and responding.
  • ALU arithmetic logic unit
  • FPA field programmable array
  • PLU programmable logic unit
  • the processing device can execute an operating system (OS) and one or more software applications running on the OS.
  • OS operating system
  • the processing device can access, store, manipulate, process, and generate data in response to the execution of the software.
  • the processing device is sometimes described as being used alone, but those skilled in the art will recognize that the processing device can include multiple processing elements and/or multiple types of processing elements.
  • the processing device can include multiple processors, or a processor and a controller. Additionally, other processing configurations, such as parallel processors, are also possible.
  • the software may include a computer program, code, instructions, or a combination of one or more of these, which may configure a processing device to perform a desired operation or may independently or collectively command the processing device.
  • the software and/or data may be embodied in any type of machine, component, physical device, virtual equipment, computer storage medium, or device for interpretation by the processing device or for providing instructions or data to the processing device.
  • the software may be distributed over network-connected computer systems and stored or executed in a distributed manner.
  • the software and data may be stored on one or more computer-readable recording media.
  • the method according to the embodiment may be implemented in the form of program commands that can be executed through various computer means and recorded on a computer-readable medium.
  • the computer-readable medium may include program commands, data files, data structures, etc., alone or in combination.
  • the program commands recorded on the medium may be those specially designed and configured for the embodiment or may be those known to and available to those skilled in the art of computer software.
  • Examples of the computer-readable recording medium include magnetic media such as hard disks, floppy disks, and magnetic tapes, optical media such as CD-ROMs and DVDs, magneto-optical media such as floptical disks, and hardware devices specially configured to store and execute program commands such as ROMs, RAMs, and flash memories.
  • Examples of the program commands include not only machine language codes generated by a compiler, but also high-level language codes that can be executed by a computer using an interpreter, etc.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

Un dispositif de génération de plasma selon un mode de réalisation de l'invention divulguée comprend : une chambre ayant un espace dans lequel un plasma est généré ; une antenne, qui est agencée sur un côté de la chambre, est connectée à une source de puissance RF pour générer des champs électriques et magnétiques induits et applique les champs électriques et magnétiques induits générés à la chambre ; une bobine agencée à l'extérieur de la chambre ; un module de génération magnétique pour appliquer, à la chambre, le champ magnétique externe généré par le courant circulant dans la bobine ; et une unité de commande, qui applique le courant à la bobine de façon à générer la région ECR à l'intérieur de la chambre.
PCT/KR2024/004876 2023-06-07 2024-04-11 Dispositif de génération de plasma et procédé permettant de régler la position d'une région ecr Ceased WO2024253313A1 (fr)

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KR10-2023-0072998 2023-06-07
KR1020230072998A KR102886652B1 (ko) 2023-06-07 2023-06-07 Ecr 영역의 위치 조절이 가능한 플라즈마 발생 장치 및 방법

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199863A (ja) * 1997-01-14 1998-07-31 Sumitomo Metal Ind Ltd プラズマ処理方法、プラズマ処理装置及び半導体装置の製造方法
JP2006089833A (ja) * 2004-09-27 2006-04-06 Shimadzu Corp Ｅｃｒスパッタ装置
KR101088110B1 (ko) * 2010-08-30 2011-12-02 한국수력원자력 주식회사 다가 이온빔 인출을 위한 강자장 ｅｃｒ 이온원 시스템
KR20130058352A (ko) * 2011-11-25 2013-06-04 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 이의 인출 전류를 증가시키는 방법
KR20230005109A (ko) * 2021-06-28 2023-01-09 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199863A (ja) * 1997-01-14 1998-07-31 Sumitomo Metal Ind Ltd プラズマ処理方法、プラズマ処理装置及び半導体装置の製造方法
JP2006089833A (ja) * 2004-09-27 2006-04-06 Shimadzu Corp Ｅｃｒスパッタ装置
KR101088110B1 (ko) * 2010-08-30 2011-12-02 한국수력원자력 주식회사 다가 이온빔 인출을 위한 강자장 ｅｃｒ 이온원 시스템
KR20130058352A (ko) * 2011-11-25 2013-06-04 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 이의 인출 전류를 증가시키는 방법
KR20230005109A (ko) * 2021-06-28 2023-01-09 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법

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