WO2024254574A3 - Energy band structures for light emitting devices - Google Patents

Energy band structures for light emitting devices Download PDF

Info

Publication number
WO2024254574A3
WO2024254574A3 PCT/US2024/033170 US2024033170W WO2024254574A3 WO 2024254574 A3 WO2024254574 A3 WO 2024254574A3 US 2024033170 W US2024033170 W US 2024033170W WO 2024254574 A3 WO2024254574 A3 WO 2024254574A3
Authority
WO
WIPO (PCT)
Prior art keywords
mqw
quantum
structures
uniform
heterojunction interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2024/033170
Other languages
French (fr)
Other versions
WO2024254574A2 (en
Inventor
John Wasserbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microglass LLC
Original Assignee
Microglass LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US18/331,908 external-priority patent/US20240014345A1/en
Application filed by Microglass LLC filed Critical Microglass LLC
Priority to KR1020267000327A priority Critical patent/KR20260021714A/en
Priority to EP24820210.3A priority patent/EP4714235A2/en
Publication of WO2024254574A2 publication Critical patent/WO2024254574A2/en
Publication of WO2024254574A3 publication Critical patent/WO2024254574A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

An apparatus and method for reducing the quantum confined Stark effect and electron leakage in polarized compound semiconductors optical gain regions is disclosed. The apparatus comprises a continuously graded multi-quantum well (MQW) band structure wherein the quantum wells (QWs) are concatenated with no quantum barriers (QBs) in between and no more than one heterojunction interface per well. An alternative, equivalent MQW band structure comprises continuously graded QWs separated by continuously graded QBs with no more than one heterojunction interface per well. In both embodiments the band structures are devoid of constant bandgap layers. Non-uniform period and non-uniform bandgap range MQW structures are contemplated. Non-uniform QW/QB thickness ratio MQW structures are also considered. Smoothly graded electron barrier layers (EBLs) with tangent energy bands on the MQW side and no more than one heterojunction interface on the p-injection side may be used to improve electron confinement and hole injection.
PCT/US2024/033170 2023-06-08 2024-06-08 Energy band structures for light emitting devices Ceased WO2024254574A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020267000327A KR20260021714A (en) 2023-06-08 2024-06-08 Energy band structure for light-emitting devices
EP24820210.3A EP4714235A2 (en) 2023-06-08 2024-06-08 Energy band structures for light emitting devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18/331,908 US20240014345A1 (en) 2019-12-31 2023-06-08 Multiple quantum well band structures for light emitting devices
US18/331,908 2023-06-08

Publications (2)

Publication Number Publication Date
WO2024254574A2 WO2024254574A2 (en) 2024-12-12
WO2024254574A3 true WO2024254574A3 (en) 2025-01-16

Family

ID=93796433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2024/033170 Ceased WO2024254574A2 (en) 2023-06-08 2024-06-08 Energy band structures for light emitting devices

Country Status (3)

Country Link
EP (1) EP4714235A2 (en)
KR (1) KR20260021714A (en)
WO (1) WO2024254574A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120728366B (en) * 2025-08-15 2025-12-09 日照市艾锐光电科技有限公司 Combined multi-quantum well active region, light-emitting device and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416338A (en) * 1992-02-29 1995-05-16 Nippondenso Co., Ltd. Semiconductor device with quantum well resonance states
JP2923442B2 (en) * 1994-01-05 1999-07-26 エイ・ティ・アンド・ティ・コーポレーション Semiconductor laser device
US20120132887A1 (en) * 2007-08-20 2012-05-31 Kim Min-Ho Nitride semiconductor light emitting device
US9780254B1 (en) * 2012-01-06 2017-10-03 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US20210343893A1 (en) * 2014-11-18 2021-11-04 Creeled, Inc. Group iii nitride based led structures including multiple quantum wells with barrier-well unit interface layers
US20240014345A1 (en) * 2019-12-31 2024-01-11 John G Wasserbauer Multiple quantum well band structures for light emitting devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416338A (en) * 1992-02-29 1995-05-16 Nippondenso Co., Ltd. Semiconductor device with quantum well resonance states
JP2923442B2 (en) * 1994-01-05 1999-07-26 エイ・ティ・アンド・ティ・コーポレーション Semiconductor laser device
US20120132887A1 (en) * 2007-08-20 2012-05-31 Kim Min-Ho Nitride semiconductor light emitting device
US9780254B1 (en) * 2012-01-06 2017-10-03 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US20210343893A1 (en) * 2014-11-18 2021-11-04 Creeled, Inc. Group iii nitride based led structures including multiple quantum wells with barrier-well unit interface layers
US20240014345A1 (en) * 2019-12-31 2024-01-11 John G Wasserbauer Multiple quantum well band structures for light emitting devices

Also Published As

Publication number Publication date
EP4714235A2 (en) 2026-03-25
WO2024254574A2 (en) 2024-12-12
KR20260021714A (en) 2026-02-13

Similar Documents

Publication Publication Date Title
US8000366B2 (en) Laser diode with high indium active layer and lattice matched cladding layer
US5661742A (en) Light emitting diode structure
EP1721341B1 (en) Iii-nitride compound semiconductor light emitting device
KR20110106879A (en) MB laser structure comprising a plurality of MB regions
WO2024254574A3 (en) Energy band structures for light emitting devices
DE10138090A1 (en) LED with multiple quantum well layer and lower reflective layer, optimizes number of layers for maximum external quantum efficiency
KR950007490B1 (en) Semiconductor laser
KR20200140978A (en) INFRARED EMITTING DIODE WITH AlGaAs-GaInP COMPENSATION LAYER
US7269196B2 (en) Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
Zhukov et al. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
CN119362155B (en) A gallium-free antimonide semiconductor infrared laser
TWI411017B (en) Deep quantum well electro-absorption modulator
DE20108607U1 (en) Semiconductor laser
US7579630B2 (en) Semiconductor optical device
US7358523B2 (en) Method and structure for deep well structures for long wavelength active regions
CN118249207A (en) Deep ultraviolet GaN quantum well device and preparation method thereof
CN1182595C (en) Semiconductor light emitting diode on beveled substrate
WO2003023912A3 (en) Type ii mid-infrared quantum well laser
JPH07235730A (en) Strained multiple quantum well structure, manufacturing method thereof, and semiconductor laser
Kito et al. Enhanced relaxation oscillation frequency of 1.3 μm strained-layer multiquantum well lasers
US7428256B2 (en) Semiconductor laser device
Hayakawa et al. High quality In0. 2Ga0. 8As/Al x Ga1− x As (x= 0− 0.32) strained single quantum wells grown by molecular beam epitaxy
Zhao et al. Monolithic integration of an InGaAsP–InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD
Lal et al. GJ study for GRIN InGaAlAs/InP lasing nano-heterostructures
JPH02119271A (en) Avalanche photodiode

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24820210

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2024820210

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 1020267000327

Country of ref document: KR

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A15-NAP-PA0105 (AS PROVIDED BY THE NATIONAL OFFICE)

WWE Wipo information: entry into national phase

Ref document number: 1020267000327

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2024820210

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2024820210

Country of ref document: EP

Effective date: 20260108

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24820210

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2024820210

Country of ref document: EP

Effective date: 20251212

WWE Wipo information: entry into national phase

Ref document number: 11202508283U

Country of ref document: SG

WWP Wipo information: published in national office

Ref document number: 11202508283U

Country of ref document: SG

ENP Entry into the national phase

Ref document number: 2024820210

Country of ref document: EP

Effective date: 20251212

ENP Entry into the national phase

Ref document number: 2024820210

Country of ref document: EP

Effective date: 20251212

WWP Wipo information: published in national office

Ref document number: 1020267000327

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2024820210

Country of ref document: EP