WO2024254574A3 - Structures de bande d'énergie pour dispositifs électroluminescents - Google Patents

Structures de bande d'énergie pour dispositifs électroluminescents Download PDF

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Publication number
WO2024254574A3
WO2024254574A3 PCT/US2024/033170 US2024033170W WO2024254574A3 WO 2024254574 A3 WO2024254574 A3 WO 2024254574A3 US 2024033170 W US2024033170 W US 2024033170W WO 2024254574 A3 WO2024254574 A3 WO 2024254574A3
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WO
WIPO (PCT)
Prior art keywords
mqw
quantum
structures
uniform
heterojunction interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2024/033170
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English (en)
Other versions
WO2024254574A2 (fr
Inventor
John Wasserbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microglass LLC
Original Assignee
Microglass LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US18/331,908 external-priority patent/US20240014345A1/en
Application filed by Microglass LLC filed Critical Microglass LLC
Priority to KR1020267000327A priority Critical patent/KR20260021714A/ko
Priority to EP24820210.3A priority patent/EP4714235A2/fr
Publication of WO2024254574A2 publication Critical patent/WO2024254574A2/fr
Publication of WO2024254574A3 publication Critical patent/WO2024254574A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Un appareil et un procédé de réduction de l'effet Stark confiné quantique et de la fuite d'électrons dans des régions de gain optique semi-conducteurs à composé polarisé sont divulgués. L'appareil comprend une structure de bande de puits quantiques multiples à gradient continu (MQW) dans laquelle les puits quantiques (QW) sont concaténés sans barrières quantiques (QB) entre eux, avec maximum une interface d'hétérojonction par puits. Une variante de structure de bande MQW équivalente comprend des QW à gradient continu séparés par des QB à gradient continu avec au maximum une interface à hétérojonction par puits. Dans les deux modes de réalisation, les structures de bande sont dépourvues de couches à bande interdite constante. Des structures MQW de plage de bande interdite non uniforme et de période non uniforme sont envisagées. Des structures MQW à rapport d'épaisseur QW/QB non uniforme sont également considérées. Des couches de barrière d'électrons (BLSE) à gradient lissé avec des bandes d'énergie tangentes sur le côté MQW avec maximum une interface d'hétérojonction sur le côté d'injection p peuvent être utilisées pour améliorer le confinement d'électrons et l'injection de trous.
PCT/US2024/033170 2023-06-08 2024-06-08 Structures de bande d'énergie pour dispositifs électroluminescents Ceased WO2024254574A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020267000327A KR20260021714A (ko) 2023-06-08 2024-06-08 발광 디바이스용 에너지 밴드 구조
EP24820210.3A EP4714235A2 (fr) 2023-06-08 2024-06-08 Structures de bande d'énergie pour dispositifs électroluminescents

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18/331,908 US20240014345A1 (en) 2019-12-31 2023-06-08 Multiple quantum well band structures for light emitting devices
US18/331,908 2023-06-08

Publications (2)

Publication Number Publication Date
WO2024254574A2 WO2024254574A2 (fr) 2024-12-12
WO2024254574A3 true WO2024254574A3 (fr) 2025-01-16

Family

ID=93796433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2024/033170 Ceased WO2024254574A2 (fr) 2023-06-08 2024-06-08 Structures de bande d'énergie pour dispositifs électroluminescents

Country Status (3)

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EP (1) EP4714235A2 (fr)
KR (1) KR20260021714A (fr)
WO (1) WO2024254574A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120728366B (zh) * 2025-08-15 2025-12-09 日照市艾锐光电科技有限公司 一种组合多量子阱有源区、发光器件及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416338A (en) * 1992-02-29 1995-05-16 Nippondenso Co., Ltd. Semiconductor device with quantum well resonance states
JP2923442B2 (ja) * 1994-01-05 1999-07-26 エイ・ティ・アンド・ティ・コーポレーション 半導体レーザ装置
US20120132887A1 (en) * 2007-08-20 2012-05-31 Kim Min-Ho Nitride semiconductor light emitting device
US9780254B1 (en) * 2012-01-06 2017-10-03 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US20210343893A1 (en) * 2014-11-18 2021-11-04 Creeled, Inc. Group iii nitride based led structures including multiple quantum wells with barrier-well unit interface layers
US20240014345A1 (en) * 2019-12-31 2024-01-11 John G Wasserbauer Multiple quantum well band structures for light emitting devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416338A (en) * 1992-02-29 1995-05-16 Nippondenso Co., Ltd. Semiconductor device with quantum well resonance states
JP2923442B2 (ja) * 1994-01-05 1999-07-26 エイ・ティ・アンド・ティ・コーポレーション 半導体レーザ装置
US20120132887A1 (en) * 2007-08-20 2012-05-31 Kim Min-Ho Nitride semiconductor light emitting device
US9780254B1 (en) * 2012-01-06 2017-10-03 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US20210343893A1 (en) * 2014-11-18 2021-11-04 Creeled, Inc. Group iii nitride based led structures including multiple quantum wells with barrier-well unit interface layers
US20240014345A1 (en) * 2019-12-31 2024-01-11 John G Wasserbauer Multiple quantum well band structures for light emitting devices

Also Published As

Publication number Publication date
EP4714235A2 (fr) 2026-03-25
WO2024254574A2 (fr) 2024-12-12
KR20260021714A (ko) 2026-02-13

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