WO2024254785A1 - Organic silicon composite structure, preparation method, and microfluidic channel structure of organic silicon composite structure - Google Patents

Abstract

The present invention provides an organic silicon composite structure, a preparation method, and a microfluidic channel structure of the organic silicon composite structure. The organic silicon composite structure comprises a non-silicon substrate layer, an intermediate layer, and an organic silicon layer; two surfaces of the intermediate layer are respectively bonded with the non-silicon substrate layer and the organic silicon layer; and the intermediate layer is an inorganic silicon layer. The intermediate layer is respectively bonded with the non-silicon substrate layer and the organic silicon layer, so that bonding between the non-silicon substrate layer and the organic silicon layer is achieved; moreover, due to a high-temperature organic reagent being not used to soak the non-silicon substrate layer during bonding, the material mechanical properties and the stability of the surface properties of the non-silicon substrate layer are kept, and the added intermediate layer basically does not affect the material mechanical properties of a substrate. An apparatus used during manufacturing is a common apparatus in a clean room for producing a semiconductor device, the operation is simple and direct, and the success rate is high.

Description

An organic silicon composite structure, preparation method and microfluidic structure thereof Technical Field

The invention relates to the field of microfluidic chip manufacturing, and in particular to an organic silicon composite structure, a preparation method and a microfluidic channel structure thereof.

Background Art

Silicone materials represented by polydimethylsiloxane (PDMS) are widely used in microfluidic chip manufacturing and flexible device fields. Silicone films have good bonding strength with silicon substrates (such as glass, silicon wafers, and silicon dioxide). After plasma treatment or chemical treatment, hot pressing and other methods can form Si-O-Si chemical bonds between silicone films and silicon substrates, thereby forming a reliable bond between the film and the substrate. However, silicone films and non-silicon polymer substrates [such as polyimide (PI), polymethyl methacrylate (PMMA), and polycarbonate (PC)] are difficult to bond, which limits the application of silicone films in the field of microfluidics and flexible devices.

In the prior art, in order to solve the bonding problem between the organic silicon film and the non-silicon polymer substrate, the non-silicon substrate is usually first treated with oxygen plasma hydrophilicity, and then immersed in an organic reagent containing a C- _NH2 bond [such as 3-aminopropyltriethoxysilane (APTES)] for heat treatment, and then both the non-silicon substrate and the organic silicon film are treated with oxygen plasma, followed by high-temperature hot pressing bonding.

The organic reagent containing C- _NH2 bond is toxic and volatile. Moreover, immersing the non-silicon substrate in the high-temperature organic reagent is likely to affect the mechanical properties of the non-silicon substrate and the stability of the surface of the material.

Summary of the invention

The present application provides an organic silicon composite structure, a preparation method of the organic silicon composite structure and a microstructure thereof. The flow channel structure is used to solve the technical problem in the prior art that when bonding the organic silicon film and the non-silicon polymer substrate, toxic and volatile organic reagents are used, and when the non-silicon substrate is immersed in the high-temperature organic reagent for treatment, the material mechanical properties and surface property stability of the non-silicon substrate are affected.

According to the first aspect of the present application, a silicone composite structure is provided, comprising a non-silicon base layer, an intermediate layer and an silicone layer; the two surfaces of the intermediate layer are bonded to the non-silicon base layer and the silicone layer respectively; the intermediate layer comprises an inorganic silicone layer.

The inorganic silicon layer includes at least one of silicon dioxide, polysilicon and silicon nitride.

Among them, the thickness of the inorganic silicon layer is 20nm-1μm, for example, it can be 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, etc.

The inorganic silicon layer is a two-layer, three-layer or multi-layer structure.

The middle layer also includes a PDMS layer bonded to the inorganic silicon layer.

The other surface of the PDMS layer is bonded to the organic silicon layer.

The organic silicon layer is a two-layer, three-layer or multi-layer structure.

The thickness of the PDMS layer is less than 10 μm, preferably greater than or equal to 5 μm, for example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc.

The non-silicon base layer 1 includes at least one of polyimide, polycarbonate, acrylic and negative photoresist.

According to the second aspect of the present application, a method for preparing any of the above-mentioned organic silicon composite structures is provided, a non-silicone base layer is prepared, an intermediate layer is deposited on the surface of the non-silicone base layer, the intermediate layer and the organic silicon layer are hot-pressed and bonded to form an organic silicon composite structure, and the intermediate layer includes an inorganic silicon layer.

Before coating the intermediate layer on the non-silicon base layer, the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer becomes hydrophilic.

The method of depositing the intermediate layer is physical vapor deposition or chemical vapor deposition.

Among them, the physical vapor deposition method is a magnetron sputtering physical vapor deposition method.

The middle layer further comprises a PDMS layer coated on the inorganic silicon layer.

Before the intermediate layer and the organic silicon layer are bonded and formed by thermal compression, the surfaces of the intermediate layer and the organic silicon layer are treated with oxygen plasma.

According to a third aspect of the present application, there is provided a microfluidic channel structure comprising any one of the above-mentioned organic silicon composite structures, wherein a microfluidic channel is provided on the organic silicon layer.

According to a fourth aspect of the present invention, there is provided a microfluidic chip comprising any one of the above-mentioned organic silicon composite structures.

Compared with the prior art, this application has the following beneficial effects:

The present invention provides an organosilicon composite structure, a preparation method and a microfluidic structure having the same, wherein the organosilicon composite structure comprises a non-silicon base layer, an intermediate layer and an organosilicon layer; the two surfaces of the intermediate layer are bonded to the non-silicon base layer and the organosilicon layer respectively; and the intermediate layer is an inorganic silicon layer. The intermediate layer is bonded to the non-silicon base layer and the organosilicon layer respectively, thereby achieving bonding between the non-silicon base layer and the organosilicon layer, thereby avoiding the use of toxic and volatile organic reagents, and at the same time obtaining reliable bonding strength between the organosilicon and the substrate; further, since the bonding process does not use the above-mentioned high-temperature organic reagent to soak the non-silicon base layer, the stability of the material mechanical properties and surface properties of the non-silicon base layer is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate; and the equipment used in the production process are all commonly used equipment in the clean room of semiconductor device production, and the operation is simple and direct, with a high success rate.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the specific implementation of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the specific implementation or the description of the prior art. Obviously, the drawings described below are some implementations of the present invention, which are for ordinary technicians in the field. For personnel, other drawings can be obtained based on these drawings without any creative work.

FIG1 is one of the schematic diagrams of the organosilicon composite structure provided in the present application;

FIG2 is a second schematic diagram of the organosilicon composite structure provided by the present application;

FIG3 is a flow chart of the preparation of the microfluidic channel structure provided by the present application;

FIG. 4 is a schematic diagram of the structure of the microfluidic channel provided in the present application.

Description of reference numerals:

1. Non-silicon base layer; 2. Inorganic silicon layer; 3. PDMS layer; 4. Organic silicon layer; 5. Microfluidic channel.

DETAILED DESCRIPTION

In order to make the above and other features and advantages of the present application more clear, the present application is further described below in conjunction with the accompanying drawings. It should be understood that the specific embodiments given herein are for the purpose of explaining to those skilled in the art and are only exemplary and not restrictive.

In the following description, many specific details are set forth to provide a thorough understanding of the present application. However, it is apparent to those skilled in the art that specific details need not be adopted to practice the present application. In other cases, well-known steps or operations are not described in detail to avoid blurring the present application.

In the prior art, when bonding an organic silicon film and a non-silicon polymer substrate, it is necessary to use a toxic and volatile high-temperature organic reagent to soak the non-silicon polymer substrate, which is likely to affect the material mechanical properties and surface property stability of the non-silicon substrate.

Referring to Figure 1, the present application provides an organic silicon composite structure, including a non-silicon base layer 1, an intermediate layer and an organic silicon layer 4; the two surfaces of the intermediate layer are bonded to the non-silicon base layer 1 and the organic silicon layer 4 respectively; the intermediate layer is an inorganic silicon layer 2.

The intermediate layer is bonded to the non-silicone base layer 1 and the organic silicon layer 4 respectively to realize the non-silicone base The bonding between layer 1 and the silicone layer 4 avoids the use of toxic and volatile organic reagents, while also obtaining reliable bonding strength between the silicone and the substrate; further, since the bonding process does not use the high-temperature organic reagent to soak the non-silicone base layer 1, the stability of the material mechanical properties and surface properties of the non-silicone base layer 1 is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate.

In some embodiments, the inorganic silicon layer 2 includes at least one of silicon dioxide, polysilicon, and silicon nitride.

In some embodiments, the inorganic silicon layer is a two-layer, three-layer or multi-layer structure, wherein the multi-layer inorganic silicon layer structure of two or more layers can be preferably obtained by chemical or physical deposition methods, by layer-by-layer deposition and stacking.

It should be understood that when the inorganic silicon layer 2 is a single layer, its material can be any one of silicon dioxide, polysilicon and silicon nitride; when the inorganic silicon layer 2 is two or more layers, the inorganic silicon layers can all use the same material or different materials.

In some embodiments, the thickness of the inorganic silicon layer 2 is 20nm-1μm; for example, it can be 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, etc.; it can be understood that the thickness of the inorganic silicon layer 2 is not limited to multiples of 20nm, and different coating parameters can be set according to the MEMS process within the aforementioned range of 20nm-1μm to obtain an inorganic silicon layer of corresponding thickness.

2 , in some embodiments, two surfaces of the inorganic silicon layer 2 are bonded to the non-silicon base layer 1 and the PDMS layer 3 , respectively, and the PDMS layer 3 is bonded to the organic silicon layer 4 .

In this embodiment, the intermediate layer includes an inorganic silicon layer 2 and a PDMS layer 3. After the inorganic silicon layer 2 is combined with one surface of the PDMS layer 3, the other surface of the PDMS layer 3, as the other surface of the intermediate layer, is easier to combine with the organic silicon layer structure with a fine structure, thereby preventing the fine structure from being broken, and the bonding effect is better, which is conducive to the preparation of microchannel structures or microfluidic chips, etc.

In some embodiments, the thickness of the PDMS layer 3 is less than 10 μm; preferably, greater than or equal to 5 μm, for example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc.

The thickness of the PDMS layer 3 is set to be much greater than the thickness of the inorganic silicon layer 2, so as to facilitate the bonding of the non-silicon base layer 1 and the organic silicon film and maintain the material mechanical properties of the PDMS layer 3. It should be noted that in the present application, the thickness of the PDMS layer 3 is between 5 and 10 microns and the thickness of the inorganic silicon layer 2 is between 20nm and 1 micron. When the thickness of the PDMS layer 3 is 5 microns and the thickness of the inorganic silicon layer 2 is 1 micron, the minimum ratio is 5, that is, when the ratio of the thickness of the PDMS layer 3 to the thickness of the inorganic silicon layer 2 is above 5, it should be understood that the thickness of the PDMS layer 3 is much greater than the thickness of the inorganic silicon layer 2.

In some embodiments, the ratio of the matrix to the hardener for preparing the PDMS layer 3 is 5:1 to 30:1, so as to maintain the material mechanical properties of the PDMS layer 3 .

In some embodiments, the organic silicon layer 4 is a two-layer, three-layer or multi-layer structure.

In some embodiments, the non-silicon base layer 1 includes at least one of polyimide, polycarbonate, acrylic, and negative photoresist.

The present application provides a method for preparing an organosilicon composite structure, preparing a non-silicone base layer 1, depositing an intermediate layer 2 on the surface of the non-silicone base layer 1, and hot-pressing bonding the intermediate layer 2 and the organosilicon layer 4 to obtain an organosilicon composite structure.

In some embodiments, before depositing the intermediate layer 2 on the non-silicon base layer 1 , the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer 1 is hydrophilic, so as to facilitate bonding between the non-silicon base layer 1 and the intermediate layer 2 .

The method for depositing the intermediate layer is physical vapor deposition or chemical vapor deposition. The physical vapor deposition method may be magnetron sputtering physical vapor deposition.

Furthermore, in order to facilitate the thermocompression bonding between the intermediate layer 2 and the organic silicon layer 4, oxygen plasma may also be used to treat the surface of the intermediate layer and the surface of the organic silicon layer before the bonding molding.

In some embodiments, after the intermediate layer 2 is deposited on the surface of the non-silicon base layer 1, a PDMS film 3 is coated on the intermediate layer 2, and the PDMS film 3 and the organic silicon layer 4 are heat-pressed and bonded to obtain an organic silicon composite structure.

Those skilled in the art will appreciate that the various technical features described above can be combined arbitrarily. Although all possible combinations of these technical features are not described, any combination of these technical features should be considered to be covered by this specification, as long as there is no contradiction in such combination.

In order to facilitate understanding of the concept of the present application, the following is an explanation in conjunction with specific embodiments:

Among them, the oxygen plasma treatment equipment uses a plasma cleaner or a reactive ion etcher, the deposition equipment uses a magnetron sputtering physical vapor deposition furnace, and the other equipment are also commonly used equipment in the clean room of semiconductor device production.

Embodiment 1,

Step a: treating the surface of a polycarbonate PC substrate with oxygen plasma to make the surface of the polycarbonate substrate hydrophilic, thereby obtaining a non-silicon base layer 1.

Step b: depositing a 20 nm thick layer of silicon dioxide on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.

Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

In step d, the pre-prepared organic silicon film and the inorganic silicon layer 2 are both subjected to oxygen plasma treatment, and then the two layers are quickly buckled together and formed by heat pressing to obtain an organic silicon composite structure. The structure after forming is shown in FIG1 .

Example 2

Step a: treating the surface of the negative photoresist SU8 substrate with oxygen plasma to make the surface of the negative photoresist substrate hydrophilic, thereby obtaining a non-silicon base layer 1.

Step b, depositing successively on the surface of the non-silicon base layer 1 which has been treated with oxygen plasma A 20 nm thick layer of silicon dioxide, a 40 nm thick layer of polysilicon and an 80 nm thick layer of silicon nitride are deposited to obtain an inorganic silicon layer 2.

Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

Step d: subjecting the pre-prepared organic silicon film and the inorganic silicon layer 2 to oxygen plasma treatment, and then rapidly buckling the two layers together, and forming them by heat-pressing bonding to obtain an organic silicon composite structure.

Example 3

Referring to FIG. 2 , in step a, the surface of the acrylic PMMA substrate is treated with oxygen plasma to make the surface of the acrylic substrate hydrophilic, thereby obtaining a non-silicon base layer 1 .

Step b: depositing a 20 nm thick layer of polysilicon and a 40 nm thick layer of silicon nitride on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.

Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

Step d: spin-coating a 10 μm thick polydimethylsiloxane PDMS layer 3 on the inorganic silicon layer 2 that has been treated with oxygen plasma, wherein the ratio of the matrix to the hardener of the PDMS layer 3 is 10:1.

Step e: subjecting the pre-prepared organic silicon film and PDMS layer 3 to oxygen plasma treatment, and then rapidly buckling the two layers together and bonding them by heat pressing to obtain an organic silicon composite structure.

Example 4

See Figures 3 and 4, S1. Thermosetting polyimide PI liquid (PI 2611, HD Microsystems) was dripped onto a 3cm*3cm glass sheet, and spin-coated at a speed of 1000rpm/min for 1min using a glue spreader, and then placed on a hot plate for curing. The hot plate was programmed to control the temperature, baked at 90°C for 2 minutes, then heated to 300°C, baked for ten minutes, then slowly cooled to 90°C, and then the hot plate was set to cool to 30°C at a speed of 1°C/min, and then the glass sheet was removed from the hot plate to obtain a PI substrate (i.e., non-silicon substrate layer 1).

S2. Place the PI substrate in a reactive ion etcher (Oxford Instruments) and treat it with oxygen plasma with the following parameters: pressure 80 mtorr, oxygen flow rate 20 sccm, power 80 W, and treatment time 90 s. Then, suspend the PI substrate upside down in a magnetic sputtering coating machine (semicore) to deposit a 20 nm thick silicon dioxide layer on the surface of the PI substrate.

S3. Take out the PI substrate and put it into the reactive ion etcher again. Use oxygen plasma treatment with the following parameters: pressure 80mtorr, oxygen flow rate 20sccm, power 60W, and treatment time 60s. Drop PDMS on the surface of the substrate and spin coat it. The spin coating parameters are: 5000rpm/min, 1min, and then heat it to 80℃ on a hot plate. After 2min, a 5μm thick PDMS layer is obtained. 3. After natural cooling, remove the substrate to complete the treatment of the PI layer.

S4. Manufacturing of organic silicon film: The 3cm*3cm silicon wafer with microfluidic channel 5 pattern is treated with silanization, and silane is selected from FOTS (sigma) to make the silicon wafer surface hydrophobic. Then, the matrix of PDMS (DOW) and the hardener are mixed evenly in a ratio of 10:1 and vacuumed to obtain a bubble-free mixture. PDMS is dropped on the surface of the silicon wafer with microfluidic channel 5 pattern and spin-coated. The spin-coating parameters are: 1000rpm/min, 1min, and then placed on a hot plate and heated at 120℃ for 5min; after natural cooling, the organic silicon film with microfluidic channel 5 pattern is peeled off for use. It should be noted that this step has no order of precedence with step s1.

S5. Place the PI substrate and the silicone film in a reactive ion etcher and use oxygen plasma treatment with the following parameters: pressure 700mtorr, oxygen flow 45sccm, power 60W, and treatment time 20s. After the treatment, the two layers are pasted together and quickly hot-pressed in a hot press (microtech) for 30s with the following parameters: 1Mpa, 65°C. After being placed at room temperature, it is peeled off from the glass sheet to obtain a PI-PDMS composite microfluidic structure, as shown in Figure 4.

Furthermore, in order to verify the pressure bearing capacity of the PI-PDMS composite microfluidic channel structure prepared by the above method, a microfluidic 5-layer pressure bearing test is also set up in this application. The specific operation is: punch a hole at the end of the microfluidic channel 5, connect a section of the pipeline with epoxy UV glue Panacol 6684, and connect the other end of the pipeline to the microfluidic pressure control system (fluigent). Set the air pressure to 10kpa-120kpa to observe whether there is structural stratification or The results showed that at 120 kPa, the PI layer and the silicone film still maintained good bonding strength.

It should be noted that the specific numerical values in the above embodiments should not be understood as limiting the present application. It should be understood that modifications to the specific numerical values in the above embodiments made by those skilled in the art in accordance with the concept of the present application should also be within the scope of the technical solution of the present application. For example, in Example 1, those skilled in the art replace the inorganic silicon layer of silicon dioxide with an inorganic silicon layer of polycrystalline silicon or silicon nitride, or change the inorganic silicon layer of silicon dioxide to 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm and 1μm, etc., which should all be within the scope of the technical solution of the present application; for example, in Example 2, those skilled in the art replace the inorganic silicon layer composed of silicon dioxide, polycrystalline silicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polycrystalline silicon, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride. Replacing with an inorganic silicon layer composed of polycrystalline silicon and silicon nitride, and adaptive adjustment of the size of each inorganic silicon layer should also be within the scope of the technical solution of the present application; for example, in Example 3, the technicians in this field replaced the inorganic silicon layer composed of polycrystalline silicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polycrystalline silicon, or replaced it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replaced it with an inorganic silicon layer composed of silicon dioxide, polycrystalline silicon and silicon nitride. In addition, the adjustment of the size of each inorganic silicon layer and the size of the PDMS layer should also be within the scope of the technical solution of the present application, wherein the size of the PDMS layer can be adjusted to 5μm, 6μm, 7μm, 8μm, 9μm and 10μm, etc., to ensure that the size of the PDMS layer is much larger than the size of the inorganic silicon layer.

Finally, it should be understood that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims (17)

A silicone composite structure, characterized in that it comprises a non-silicon base layer (1), an intermediate layer and an silicone layer (4); two surfaces of the intermediate layer are bonded to the non-silicon base layer (1) and the silicone layer (4) respectively; and the intermediate layer comprises an inorganic silicone layer (2). The organic silicon composite structure according to claim 1, characterized in that the inorganic silicon layer (2) comprises at least one of silicon dioxide, polycrystalline silicon and silicon nitride. The organic silicon composite structure according to claim 1, characterized in that the thickness of the inorganic silicon layer (2) is 20 nm-1 μm. The organic silicon composite structure according to claim 1 is characterized in that the inorganic silicon layer is a two-layer, three-layer or multi-layer structure. The organic silicon composite structure according to claim 1, characterized in that the intermediate layer further comprises a PDMS layer (3) bonded to the inorganic silicon layer (2). The organosilicon composite according to claim 5, characterized in that another surface of the PDMS layer (3) is bonded to the organosilicon layer (4). The organosilicon composite according to claim 1 or 6, characterized in that the organosilicon layer (4) is a two-layer, three-layer or multi-layer structure. The organic silicon composite structure according to claim 5 or 6, characterized in that the thickness of the PDMS layer (3) is less than 10 μm. The organosilicon composite structure according to claim 1, characterized in that the non-silicon base layer (1) comprises at least one of polyimide, polycarbonate, acrylic and negative photoresist. A method for preparing an organosilicon composite structure as described in any one of claims 1 to 9, characterized in that a non-silicone base layer is prepared, an intermediate layer is deposited on the surface of the non-silicone base layer, and the intermediate layer and the organosilicon layer are hot-pressed and bonded to obtain the organosilicon composite structure, wherein the intermediate layer includes an inorganic silicon layer. The method for preparing an organosilicon composite structure according to claim 10, characterized in that: Before depositing the intermediate layer on the non-silicon base layer, the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer becomes hydrophilic. The method for preparing an organosilicon composite structure according to claim 10, characterized in that the method of depositing the intermediate layer is physical vapor deposition or chemical vapor deposition. The method for preparing an organosilicon composite structure according to claim 12, characterized in that the physical vapor deposition method is a magnetron sputtering physical vapor deposition method. The method for preparing an organosilicon composite structure according to claim 10, characterized in that the intermediate layer further comprises a PDMS layer coated on the inorganic silicon layer. The method for preparing an organosilicon composite structure according to claim 10 is characterized in that before the intermediate layer and the organosilicon layer are hot-pressed and bonded to form a mold, the surface of the intermediate layer and the surface of the organosilicon layer are treated with oxygen plasma. A microfluidic channel structure comprising the organic silicon composite structure as claimed in any one of claims 1 to 9, characterized in that a microfluidic channel is provided on the organic silicon layer. A microfluidic chip, characterized in that it comprises the organic silicon composite structure as described in any one of claims 1 to 9.