WO2024254785A1 - Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique - Google Patents

Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique Download PDF

Info

Publication number
WO2024254785A1
WO2024254785A1 PCT/CN2023/100211 CN2023100211W WO2024254785A1 WO 2024254785 A1 WO2024254785 A1 WO 2024254785A1 CN 2023100211 W CN2023100211 W CN 2023100211W WO 2024254785 A1 WO2024254785 A1 WO 2024254785A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
silicon
composite structure
organosilicon
organic silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/100211
Other languages
English (en)
Chinese (zh)
Inventor
周博远
张宇宁
云全新
黎宇翔
董宇亮
章文蔚
徐讯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BGI Shenzhen Co Ltd
Original Assignee
BGI Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BGI Shenzhen Co Ltd filed Critical BGI Shenzhen Co Ltd
Priority to CN202380059441.6A priority Critical patent/CN119677632A/zh
Priority to PCT/CN2023/100211 priority patent/WO2024254785A1/fr
Publication of WO2024254785A1 publication Critical patent/WO2024254785A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/08—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor using a stream of discrete samples flowing along a tube system, e.g. flow injection analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N37/00—Details not covered by any other group of this subclass

Definitions

  • the invention relates to the field of microfluidic chip manufacturing, and in particular to an organic silicon composite structure, a preparation method and a microfluidic channel structure thereof.
  • Silicone materials represented by polydimethylsiloxane (PDMS) are widely used in microfluidic chip manufacturing and flexible device fields. Silicone films have good bonding strength with silicon substrates (such as glass, silicon wafers, and silicon dioxide). After plasma treatment or chemical treatment, hot pressing and other methods can form Si-O-Si chemical bonds between silicone films and silicon substrates, thereby forming a reliable bond between the film and the substrate.
  • silicon substrates such as glass, silicon wafers, and silicon dioxide
  • hot pressing and other methods can form Si-O-Si chemical bonds between silicone films and silicon substrates, thereby forming a reliable bond between the film and the substrate.
  • silicone films and non-silicon polymer substrates such as polyimide (PI), polymethyl methacrylate (PMMA), and polycarbonate (PC)] are difficult to bond, which limits the application of silicone films in the field of microfluidics and flexible devices.
  • the non-silicon substrate is usually first treated with oxygen plasma hydrophilicity, and then immersed in an organic reagent containing a C- NH2 bond [such as 3-aminopropyltriethoxysilane (APTES)] for heat treatment, and then both the non-silicon substrate and the organic silicon film are treated with oxygen plasma, followed by high-temperature hot pressing bonding.
  • an organic reagent containing a C- NH2 bond such as 3-aminopropyltriethoxysilane (APTES)
  • the organic reagent containing C- NH2 bond is toxic and volatile. Moreover, immersing the non-silicon substrate in the high-temperature organic reagent is likely to affect the mechanical properties of the non-silicon substrate and the stability of the surface of the material.
  • the present application provides an organic silicon composite structure, a preparation method of the organic silicon composite structure and a microstructure thereof.
  • the flow channel structure is used to solve the technical problem in the prior art that when bonding the organic silicon film and the non-silicon polymer substrate, toxic and volatile organic reagents are used, and when the non-silicon substrate is immersed in the high-temperature organic reagent for treatment, the material mechanical properties and surface property stability of the non-silicon substrate are affected.
  • a silicone composite structure comprising a non-silicon base layer, an intermediate layer and an silicone layer; the two surfaces of the intermediate layer are bonded to the non-silicon base layer and the silicone layer respectively; the intermediate layer comprises an inorganic silicone layer.
  • the inorganic silicon layer includes at least one of silicon dioxide, polysilicon and silicon nitride.
  • the thickness of the inorganic silicon layer is 20nm-1 ⁇ m, for example, it can be 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, etc.
  • the inorganic silicon layer is a two-layer, three-layer or multi-layer structure.
  • the middle layer also includes a PDMS layer bonded to the inorganic silicon layer.
  • the other surface of the PDMS layer is bonded to the organic silicon layer.
  • the organic silicon layer is a two-layer, three-layer or multi-layer structure.
  • the thickness of the PDMS layer is less than 10 ⁇ m, preferably greater than or equal to 5 ⁇ m, for example, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m, etc.
  • a method for preparing any of the above-mentioned organic silicon composite structures is provided, a non-silicone base layer is prepared, an intermediate layer is deposited on the surface of the non-silicone base layer, the intermediate layer and the organic silicon layer are hot-pressed and bonded to form an organic silicon composite structure, and the intermediate layer includes an inorganic silicon layer.
  • the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer becomes hydrophilic.
  • the method of depositing the intermediate layer is physical vapor deposition or chemical vapor deposition.
  • the physical vapor deposition method is a magnetron sputtering physical vapor deposition method.
  • the surfaces of the intermediate layer and the organic silicon layer are treated with oxygen plasma.
  • a microfluidic channel structure comprising any one of the above-mentioned organic silicon composite structures, wherein a microfluidic channel is provided on the organic silicon layer.
  • a microfluidic chip comprising any one of the above-mentioned organic silicon composite structures.
  • the present invention provides an organosilicon composite structure, a preparation method and a microfluidic structure having the same, wherein the organosilicon composite structure comprises a non-silicon base layer, an intermediate layer and an organosilicon layer; the two surfaces of the intermediate layer are bonded to the non-silicon base layer and the organosilicon layer respectively; and the intermediate layer is an inorganic silicon layer.
  • the intermediate layer is bonded to the non-silicon base layer and the organosilicon layer respectively, thereby achieving bonding between the non-silicon base layer and the organosilicon layer, thereby avoiding the use of toxic and volatile organic reagents, and at the same time obtaining reliable bonding strength between the organosilicon and the substrate; further, since the bonding process does not use the above-mentioned high-temperature organic reagent to soak the non-silicon base layer, the stability of the material mechanical properties and surface properties of the non-silicon base layer is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate; and the equipment used in the production process are all commonly used equipment in the clean room of semiconductor device production, and the operation is simple and direct, with a high success rate.
  • FIG1 is one of the schematic diagrams of the organosilicon composite structure provided in the present application.
  • FIG2 is a second schematic diagram of the organosilicon composite structure provided by the present application.
  • FIG3 is a flow chart of the preparation of the microfluidic channel structure provided by the present application.
  • FIG. 4 is a schematic diagram of the structure of the microfluidic channel provided in the present application.
  • Non-silicon base layer 2. Inorganic silicon layer; 3. PDMS layer; 4. Organic silicon layer; 5. Microfluidic channel.
  • the present application provides an organic silicon composite structure, including a non-silicon base layer 1, an intermediate layer and an organic silicon layer 4; the two surfaces of the intermediate layer are bonded to the non-silicon base layer 1 and the organic silicon layer 4 respectively; the intermediate layer is an inorganic silicon layer 2.
  • the intermediate layer is bonded to the non-silicone base layer 1 and the organic silicon layer 4 respectively to realize the non-silicone base
  • the bonding between layer 1 and the silicone layer 4 avoids the use of toxic and volatile organic reagents, while also obtaining reliable bonding strength between the silicone and the substrate; further, since the bonding process does not use the high-temperature organic reagent to soak the non-silicone base layer 1, the stability of the material mechanical properties and surface properties of the non-silicone base layer 1 is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate.
  • the inorganic silicon layer 2 includes at least one of silicon dioxide, polysilicon, and silicon nitride.
  • the inorganic silicon layer is a two-layer, three-layer or multi-layer structure, wherein the multi-layer inorganic silicon layer structure of two or more layers can be preferably obtained by chemical or physical deposition methods, by layer-by-layer deposition and stacking.
  • the inorganic silicon layer 2 when the inorganic silicon layer 2 is a single layer, its material can be any one of silicon dioxide, polysilicon and silicon nitride; when the inorganic silicon layer 2 is two or more layers, the inorganic silicon layers can all use the same material or different materials.
  • the thickness of the inorganic silicon layer 2 is 20nm-1 ⁇ m; for example, it can be 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, etc.; it can be understood that the thickness of the inorganic silicon layer 2 is not limited to multiples of 20nm, and different coating parameters can be set according to the MEMS process within the aforementioned range of 20nm-1 ⁇ m to obtain an inorganic silicon layer of corresponding thickness.
  • two surfaces of the inorganic silicon layer 2 are bonded to the non-silicon base layer 1 and the PDMS layer 3 , respectively, and the PDMS layer 3 is bonded to the organic silicon layer 4 .
  • the intermediate layer includes an inorganic silicon layer 2 and a PDMS layer 3.
  • the inorganic silicon layer 2 is combined with one surface of the PDMS layer 3, the other surface of the PDMS layer 3, as the other surface of the intermediate layer, is easier to combine with the organic silicon layer structure with a fine structure, thereby preventing the fine structure from being broken, and the bonding effect is better, which is conducive to the preparation of microchannel structures or microfluidic chips, etc.
  • the thickness of the PDMS layer 3 is less than 10 ⁇ m; preferably, greater than or equal to 5 ⁇ m, for example, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m, etc.
  • the thickness of the PDMS layer 3 is set to be much greater than the thickness of the inorganic silicon layer 2, so as to facilitate the bonding of the non-silicon base layer 1 and the organic silicon film and maintain the material mechanical properties of the PDMS layer 3. It should be noted that in the present application, the thickness of the PDMS layer 3 is between 5 and 10 microns and the thickness of the inorganic silicon layer 2 is between 20nm and 1 micron.
  • the minimum ratio is 5, that is, when the ratio of the thickness of the PDMS layer 3 to the thickness of the inorganic silicon layer 2 is above 5, it should be understood that the thickness of the PDMS layer 3 is much greater than the thickness of the inorganic silicon layer 2.
  • the ratio of the matrix to the hardener for preparing the PDMS layer 3 is 5:1 to 30:1, so as to maintain the material mechanical properties of the PDMS layer 3 .
  • the organic silicon layer 4 is a two-layer, three-layer or multi-layer structure.
  • the non-silicon base layer 1 includes at least one of polyimide, polycarbonate, acrylic, and negative photoresist.
  • the present application provides a method for preparing an organosilicon composite structure, preparing a non-silicone base layer 1, depositing an intermediate layer 2 on the surface of the non-silicone base layer 1, and hot-pressing bonding the intermediate layer 2 and the organosilicon layer 4 to obtain an organosilicon composite structure.
  • the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer 1 is hydrophilic, so as to facilitate bonding between the non-silicon base layer 1 and the intermediate layer 2 .
  • the method for depositing the intermediate layer is physical vapor deposition or chemical vapor deposition.
  • the physical vapor deposition method may be magnetron sputtering physical vapor deposition.
  • oxygen plasma may also be used to treat the surface of the intermediate layer and the surface of the organic silicon layer before the bonding molding.
  • a PDMS film 3 is coated on the intermediate layer 2, and the PDMS film 3 and the organic silicon layer 4 are heat-pressed and bonded to obtain an organic silicon composite structure.
  • the oxygen plasma treatment equipment uses a plasma cleaner or a reactive ion etcher
  • the deposition equipment uses a magnetron sputtering physical vapor deposition furnace
  • the other equipment are also commonly used equipment in the clean room of semiconductor device production.
  • Step a treating the surface of a polycarbonate PC substrate with oxygen plasma to make the surface of the polycarbonate substrate hydrophilic, thereby obtaining a non-silicon base layer 1.
  • Step b depositing a 20 nm thick layer of silicon dioxide on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.
  • Step c treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.
  • step d the pre-prepared organic silicon film and the inorganic silicon layer 2 are both subjected to oxygen plasma treatment, and then the two layers are quickly buckled together and formed by heat pressing to obtain an organic silicon composite structure.
  • the structure after forming is shown in FIG1 .
  • Step a treating the surface of the negative photoresist SU8 substrate with oxygen plasma to make the surface of the negative photoresist substrate hydrophilic, thereby obtaining a non-silicon base layer 1.
  • Step b depositing successively on the surface of the non-silicon base layer 1 which has been treated with oxygen plasma A 20 nm thick layer of silicon dioxide, a 40 nm thick layer of polysilicon and an 80 nm thick layer of silicon nitride are deposited to obtain an inorganic silicon layer 2.
  • Step c treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.
  • Step d subjecting the pre-prepared organic silicon film and the inorganic silicon layer 2 to oxygen plasma treatment, and then rapidly buckling the two layers together, and forming them by heat-pressing bonding to obtain an organic silicon composite structure.
  • step a the surface of the acrylic PMMA substrate is treated with oxygen plasma to make the surface of the acrylic substrate hydrophilic, thereby obtaining a non-silicon base layer 1 .
  • Step b depositing a 20 nm thick layer of polysilicon and a 40 nm thick layer of silicon nitride on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.
  • Step c treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.
  • Step d spin-coating a 10 ⁇ m thick polydimethylsiloxane PDMS layer 3 on the inorganic silicon layer 2 that has been treated with oxygen plasma, wherein the ratio of the matrix to the hardener of the PDMS layer 3 is 10:1.
  • Step e subjecting the pre-prepared organic silicon film and PDMS layer 3 to oxygen plasma treatment, and then rapidly buckling the two layers together and bonding them by heat pressing to obtain an organic silicon composite structure.
  • Thermosetting polyimide PI liquid (PI 2611, HD Microsystems) was dripped onto a 3cm*3cm glass sheet, and spin-coated at a speed of 1000rpm/min for 1min using a glue spreader, and then placed on a hot plate for curing.
  • the hot plate was programmed to control the temperature, baked at 90°C for 2 minutes, then heated to 300°C, baked for ten minutes, then slowly cooled to 90°C, and then the hot plate was set to cool to 30°C at a speed of 1°C/min, and then the glass sheet was removed from the hot plate to obtain a PI substrate (i.e., non-silicon substrate layer 1).
  • a microfluidic 5-layer pressure bearing test is also set up in this application.
  • the specific operation is: punch a hole at the end of the microfluidic channel 5, connect a section of the pipeline with epoxy UV glue Panacol 6684, and connect the other end of the pipeline to the microfluidic pressure control system (fluigent).
  • Example 1 those skilled in the art replace the inorganic silicon layer of silicon dioxide with an inorganic silicon layer of polycrystalline silicon or silicon nitride, or change the inorganic silicon layer of silicon dioxide to 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm and 1 ⁇ m, etc., which should all be within the scope of the technical solution of the present application; for example, in Example 2, those skilled in the art replace the inorganic silicon layer composed of silicon dioxide, polycrystalline silicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polycrystalline silicon, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride.
  • Replacing with an inorganic silicon layer composed of polycrystalline silicon and silicon nitride, and adaptive adjustment of the size of each inorganic silicon layer should also be within the scope of the technical solution of the present application; for example, in Example 3, the technicians in this field replaced the inorganic silicon layer composed of polycrystalline silicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polycrystalline silicon, or replaced it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replaced it with an inorganic silicon layer composed of silicon dioxide, polycrystalline silicon and silicon nitride.
  • the adjustment of the size of each inorganic silicon layer and the size of the PDMS layer should also be within the scope of the technical solution of the present application, wherein the size of the PDMS layer can be adjusted to 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m and 10 ⁇ m, etc., to ensure that the size of the PDMS layer is much larger than the size of the inorganic silicon layer.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention concerne une structure composite de silicium organique, un procédé de préparation et une structure de canal microfluidique de la structure composite de silicium organique. La structure composite de silicium organique comprend une couche de substrat non-silicium, une couche intermédiaire et une couche de silicium organique ; deux surfaces de la couche intermédiaire sont respectivement liées à la couche de substrat non-silicium et à la couche de silicium organique ; et la couche intermédiaire est une couche de silicium inorganique. La couche intermédiaire est respectivement liée à la couche de substrat non-silicium et à la couche de silicium organique, de telle sorte que la liaison entre la couche de substrat non-silicium et la couche de silicium organique est obtenue ; de plus, en raison du fait qu'un réactif organique à haute température n'est pas utilisé pour tremper la couche de substrat non-silicium pendant la liaison, les propriétés mécaniques de matériau et la stabilité des propriétés de surface de la couche de substrat non-silicium sont maintenues, et la couche intermédiaire ajoutée n'affecte fondamentalement pas les propriétés mécaniques de matériau d'un substrat. Un appareil utilisé pendant la fabrication est un appareil commun dans une salle blanche pour produire un dispositif à semi-conducteur, le fonctionnement est simple et direct, et le taux de réussite est élevé.
PCT/CN2023/100211 2023-06-14 2023-06-14 Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique Ceased WO2024254785A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202380059441.6A CN119677632A (zh) 2023-06-14 2023-06-14 一种有机硅复合结构、制备方法及其微流道结构
PCT/CN2023/100211 WO2024254785A1 (fr) 2023-06-14 2023-06-14 Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2023/100211 WO2024254785A1 (fr) 2023-06-14 2023-06-14 Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique

Publications (1)

Publication Number Publication Date
WO2024254785A1 true WO2024254785A1 (fr) 2024-12-19

Family

ID=93851109

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/100211 Ceased WO2024254785A1 (fr) 2023-06-14 2023-06-14 Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique

Country Status (2)

Country Link
CN (1) CN119677632A (fr)
WO (1) WO2024254785A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103055981A (zh) * 2012-12-31 2013-04-24 苏州汶颢芯片科技有限公司 一种聚二甲基硅氧烷微流控芯片及其制备方法
CN104412110A (zh) * 2012-07-09 2015-03-11 索尼公司 微芯片和用于制造微芯片的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104412110A (zh) * 2012-07-09 2015-03-11 索尼公司 微芯片和用于制造微芯片的方法
CN103055981A (zh) * 2012-12-31 2013-04-24 苏州汶颢芯片科技有限公司 一种聚二甲基硅氧烷微流控芯片及其制备方法

Also Published As

Publication number Publication date
CN119677632A (zh) 2025-03-21

Similar Documents

Publication Publication Date Title
CN105233888B (zh) 玻璃‑pdms薄膜‑玻璃夹心微流控芯片的制作方法
US6787339B1 (en) Microfluidic devices having embedded metal conductors and methods of fabricating said devices
WO2008032128A1 (fr) Technique d'assemblage
CN110618488B (zh) 一种带氮化硅层的单晶薄膜及其制备方法
CN101779280B (zh) 多层互连的波纹界面
JP7063682B2 (ja) 流体デバイス用複合部材およびその製造方法
WO2024254785A1 (fr) Structure composite de silicium organique, procédé de préparation et structure de canal microfluidique de structure composite de silicium organique
CN108539009B (zh) 纳米级单晶薄膜
CN105396631A (zh) 一种立体的微流控芯片及其制备方法
JP2009500819A (ja) 酸化物もしくは窒化物の薄い結合層を堆積することによる基板の組み立て方法
CN114227525A (zh) 一种抛光改善晶圆厚度均匀性的方法
CN108828863B (zh) 一种柔性液晶面板的tft阵列基板及其制作方法
CN118824959A (zh) 一种两面临时键合的晶圆及其加工工艺方法和应用
CN1683443A (zh) 一种以聚二甲基硅氧烷为基材的芯片简易不可逆键合方法
US20070148588A1 (en) Methods of releasing photoresist film from substrate and bonding photoresist film with second substrate
US20090297867A1 (en) Semiconductor thin film-attached substrate and production method thereof
CN116761494A (zh) 一种复合压电衬底及其制备方法
KR102871964B1 (ko) 반도체 적층 방법 및 3차원 다중-칩 반도체 소자
JP2007513512A (ja) ポリマー膜上にエレクトロニクス構成部品を分子架橋する方法
CN114749220A (zh) 一种超高品质因子的纳米光流控芯片、制备方法、及应用
CN100420622C (zh) 基于聚二甲基硅氧烷微小元器件的二次模板复制加工方法
CN111167529A (zh) 一种基于溶液辅助蒸发制作自封闭微纳米流控系统的方法
JP7632907B1 (ja) シリカ微粒子が分散されたメチルヒドロシロキサン組成膜、又は、メチルヒドロシロキサザン組成膜を備えることを特徴とする基板及びその製造方法
CN118290804A (zh) 一种柔性高阻隔封装膜及其制备方法
CN119608553A (zh) 分组分涂覆、键合方法及其应用

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23941022

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 202380059441.6

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 202380059441.6

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE