WO2025005461A1 - Module d'alimentation sans fil refroidi sur les deux surfaces et son procédé de fabrication - Google Patents

Module d'alimentation sans fil refroidi sur les deux surfaces et son procédé de fabrication Download PDF

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Publication number
WO2025005461A1
WO2025005461A1 PCT/KR2024/006535 KR2024006535W WO2025005461A1 WO 2025005461 A1 WO2025005461 A1 WO 2025005461A1 KR 2024006535 W KR2024006535 W KR 2024006535W WO 2025005461 A1 WO2025005461 A1 WO 2025005461A1
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Prior art keywords
copper
layer
copper layer
base
ceramic
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Ceased
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PCT/KR2024/006535
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English (en)
Korean (ko)
Inventor
김민수
배일석
서진원
김병길
육점국
이효종
문상환
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Rn2 Ceramics Co Ltd
Rn2 Technologies Co Ltd
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Rn2 Ceramics Co Ltd
Rn2 Technologies Co Ltd
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Priority claimed from KR1020240061413A external-priority patent/KR102935000B1/ko
Application filed by Rn2 Ceramics Co Ltd, Rn2 Technologies Co Ltd filed Critical Rn2 Ceramics Co Ltd
Publication of WO2025005461A1 publication Critical patent/WO2025005461A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the technical idea of the present invention relates to a power module, and more specifically, to a wireless double-sided cooling type power module and a method for manufacturing the same.
  • Power semiconductor devices which are widely used in mobile devices, home appliances, and automobiles, play a role in converting, processing, and controlling power. Since power semiconductor devices, to which high current and high voltage are applied for power supply, generate a large amount of heat, ceramic circuit boards made of ceramic materials such as Al 2 O 3 , AlN, Zirconia Toughened Alumina (ZTA), and Si 3 N 4 are used. Ceramics have high insulation, mechanical strength, and relatively high heat dissipation performance, and are therefore suitable as substrates for high-power power semiconductor devices.
  • the ceramic circuit board may include a conductive pattern made of aluminum (Al) or copper (Cu) with high thermal conductivity on the ceramic material.
  • a double-sided cooling type power module in which ceramic circuit boards are arranged on both sides of the power semiconductor device to enable cooling on both sides.
  • cooling fins are arranged on the outside of the ceramic circuit board, and heat can be transferred to a water cooler installed externally through the cooling fins.
  • the conventional technology for manufacturing such ceramic circuit boards forms a pattern of a conductive layer using an etching process, and therefore has limitations in the pattern shape.
  • the Mo-Cu alloy conductive spacer has low thermal conductivity, and has a limitation in that it requires an additional process of individually mounting small-sized spacers on a ceramic circuit board.
  • the technical problem to be achieved by the technical idea of the present invention is to provide a wireless double-sided cooling power module that uses a copper structure as wiring instead of a bonding wire, and a method for manufacturing the same.
  • a wireless double-sided cooling power module using a copper structure as wiring and a method for manufacturing the same are provided.
  • the wireless double-sided cooling power module may include a first ceramic substrate including a first ceramic layer and a first base copper layer disposed on a first surface of the first ceramic layer; a second ceramic substrate disposed to face the first ceramic substrate and including a second ceramic layer and a second base copper layer disposed on a third surface of the second ceramic layer; a semiconductor element mounted on the first ceramic substrate and including a first electrode, a second electrode, and a third electrode; and a copper structure plug disposed between the second ceramic substrate and the semiconductor element, electrically connected to the semiconductor element, and formed by printing, pressing, and sintering a copper-containing paste.
  • the copper structure plug may include a first copper structure plug electrically connecting the first electrode of the semiconductor element to the second base copper layer of the second ceramic substrate; and a second copper structure plug electrically connecting the second electrode of the semiconductor element to the second base copper layer of the second ceramic substrate.
  • the copper structure plug may further include a third copper structure plug disposed between the first base copper layer of the first ceramic substrate and the second base copper layer of the second ceramic substrate to electrically connect the first base copper layer and the second base copper layer.
  • the third electrode of the semiconductor element can be electrically connected to the first base copper layer of the first ceramic substrate.
  • the copper structure plug may include a region on the upper side having a differential porosity and having a lower porosity than the lower side that is relatively adjacent to the second base copper layer.
  • the copper structure plug may have a porosity that decreases from the lower side relatively adjacent to the second base copper layer toward the upper side.
  • the copper structure plug may have a pyramidal shape whose plane area decreases from the lower side relatively adjacent to the second base copper layer to the upper side.
  • the copper structure plug may include: a base portion; and a surface portion disposed on the base portion and having a lower porosity than the base portion.
  • the base portion may have a porosity in a range of more than 5 volume% and less than or equal to 20 volume%
  • the surface portion may have a porosity in a range of more than 0 volume% and less than or equal to 5 volume%.
  • the first ceramic substrate may further include a lead frame electrically connected to the first base copper layer.
  • a mold layer filling a space between the first ceramic substrate and the second ceramic substrate may be further included.
  • the first ceramic substrate may further include a first outer copper layer disposed on a second surface opposite to the first surface
  • the second ceramic substrate may further include a second outer copper layer disposed on a fourth surface opposite to the third surface
  • At least one of the first base copper layer and the second base copper layer may be formed of a TPC copper layer formed by printing, pressing, and sintering a copper-containing paste on the ceramic layer, a DBC copper layer formed by bonding copper foil on the ceramic layer by a high-temperature oxidation process, a DPC copper layer formed by forming a seed layer on the ceramic layer and then plating the seed layer with copper, or an AMB copper layer formed by bonding a copper foil using an active metal foil to the ceramic layer.
  • At least one of the first base copper layer and the second base copper layer may include at least one of a bonded copper layer, a laminated copper layer, and a surface copper layer.
  • the bonding copper layer may be formed using a copper-containing bonding paste including glass frit, inorganic particles, copper oxide particles, copper particles, a solvent and a binder
  • the laminated copper layer may be formed using a copper-containing laminated paste including inorganic particles, copper particles, a solvent and a binder
  • the surface copper layer may be formed using a copper-containing surface paste including copper oxide particles, copper particles, a solvent and a binder.
  • a method for manufacturing the wireless double-sided cooling power module may include the steps of: providing a first ceramic substrate including a first ceramic layer and a first base copper layer disposed on a first surface of the first ceramic layer; providing a second ceramic substrate disposed to face the first ceramic substrate and including a second ceramic layer and a second base copper layer disposed on a third surface of the second ceramic layer; mounting a semiconductor element on the first ceramic substrate; forming a copper structure plug by printing, pressing, and sintering at a temperature of 500° C. to 700° C. a copper-containing paste on the second base copper layer of the second ceramic substrate; and arranging the first ceramic substrate and the second ceramic substrate to face each other and bonding the semiconductor element and the copper structure plug.
  • the step of forming the copper structure plug may be performed such that the copper structure plug has a differential porosity and includes a region on the upper side having a lower porosity than a region on the lower side that is relatively adjacent to the second base copper layer.
  • the printing step and the pressing step are performed in one cycle to form one paste layer, and then the printing step and the pressing step are performed again to further form one subsequent paste layer on the previously formed paste layer, thereby forming a plurality of paste layers, and the plurality of paste layers are sintered together.
  • the application area of the copper paste is reduced from the lower side adjacent to the second base copper layer toward the upper side, thereby allowing the copper structure plug to have a pyramidal shape.
  • the first ceramic substrate may include a first active metal brazing layer interposed between the first ceramic layer and the first base copper layer
  • the second ceramic substrate may include a second active metal brazing layer interposed between the second ceramic layer and the second base copper layer.
  • the ceramic substrate according to the present invention has an advantage in that a three-dimensional pattern can be formed on the ceramic substrate using a copper structure plug formed by printing, pressing, and sintering so as to be able to respond to various types of semiconductor devices mounted on the substrate.
  • the wire bonding process is not required, the electrical conductivity and thermal conductivity are improved, and the durability against thermal cycles can be improved.
  • the bonding wire since the bonding wire is not used, the disadvantages such as heat loss, power loss, and reduced durability due to the bonding wire can be eliminated, and the process cost can be reduced and the defect rate can be reduced.
  • the above copper structure plug is a sintered material rather than a rolled material, there are differences in the microstructure, such as not having the directionality that appears in a rolled material, and there are differences in the degree of inclusion and distribution of pores.
  • the copper structure plug does not require a molybdenum/copper spacer to be formed and attached in a separate process, and is printed, pressed, and sintered at once using a 3D TPC method using a copper-containing paste, thereby providing excellent positional accuracy, minimizing thickness deviation of the spacer, and further preventing damage to semiconductor elements.
  • the copper structure plug according to the present invention includes a lower layer having a high porosity, thereby providing low thermal stress and improved resistance to thermal fatigue fracture, and further includes an upper layer having a low porosity, thereby preventing bonding defects in power semiconductor devices.
  • the method for manufacturing a wireless double-sided cooling power module according to the present invention can prevent the formation of defects due to heat by performing sintering of a copper structure plug at a temperature in the range of 500°C to 800°C.
  • surface blasting treatment copper oxide formed on the surface of the copper structure plug during sintering can be removed to provide a smooth surface, thereby stably ensuring electrical connection between the copper structure plug and the power semiconductor element.
  • FIGS. 1 and 2 are cross-sectional views illustrating a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIG. 3 is a schematic diagram illustrating a power semiconductor element included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIGS. 4 and 5 are cross-sectional views illustrating a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIG. 6 is a cross-sectional view illustrating a first base copper layer included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a copper structure plug included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIG. 8 is a photograph showing the microstructure of a copper structure plug included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIGS. 9A and 9B are cross-sectional views and photographs illustrating a pyramid-shaped copper structure of a ceramic circuit board according to one embodiment of the present invention.
  • FIG. 10 is a flow chart illustrating a method for manufacturing a wireless double-sided cooling power module according to one embodiment of the present invention.
  • FIG. 11 is a result of an ultrasonic inspection showing whether a defect occurs according to the sintering temperature of a ceramic substrate included in a wireless double-sided cooling power module according to an embodiment of the present invention.
  • FIG. 12 is a photograph showing the surface state of a ceramic substrate included in a wireless double-sided cooling power module according to one embodiment of the present invention before and after blasting treatment.
  • a layer formed "on" another layer may refer to a layer formed directly on the other layer, or may refer to a layer formed on an intermediate layer or intermediate layers formed on the other layer. It should be noted that the meanings of "upper” and “lower” in this specification are relative, and the direction upward from the ceramic substrate is described as “upper”, and the direction downward is described as “lower.”
  • power semiconductor devices are exemplary, and cases composed of other semiconductor devices are also included in the technical spirit of the present invention.
  • FIGS. 1 and 2 are cross-sectional views illustrating a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the wireless double-sided cooling power module (100) includes a first ceramic substrate (110), a second ceramic substrate (120), a power semiconductor element (130), a first copper structure plug (140), a second copper structure plug (150), a third copper structure plug (160), and a mold layer (170).
  • the wireless double-sided cooling power module (100) may further include a lead frame (180).
  • a wireless double-sided cooling power module (100a) includes a first ceramic substrate (110a), a second ceramic substrate (120a), a power semiconductor element (130), a first copper structure plug (140), a second copper structure plug (150), a third copper structure plug (160), and a mold layer (170).
  • the wireless double-sided cooling power module (100a) may further include a lead frame (180).
  • the first ceramic substrate (110) may include a first ceramic layer (112), a first base copper layer (114), and a first outer copper layer (116).
  • the second ceramic substrate (120) may include a second ceramic layer (122), a second base copper layer (124), and a second outer copper layer (126).
  • the first ceramic substrate (110) and the second ceramic substrate (120) may be disposed to face each other.
  • the first ceramic substrate (110a) may include a first ceramic layer (112), a first base copper layer (114), a first outer copper layer (116), and a first active metal brazing layer (118).
  • the second ceramic substrate (120a) may include a second ceramic layer (122), a second base copper layer (124), a second outer copper layer (126), and a second active metal brazing layer (128).
  • the first ceramic substrate (110a) and the second ceramic substrate (120a) may be disposed to face each other.
  • the first ceramic substrate (100a) of FIG. 2 has a difference in that it further includes a first active metal brazing layer (118), and the second ceramic substrate (200a) has a difference in that it further includes a second active metal brazing layer (128).
  • the first active metal brazing layer (118) may be interposed between the first ceramic layer (112) and the first base copper layer (114) and between the first ceramic layer (112) and the first outer copper layer (116).
  • the second active metal brazing layer (128) may be interposed between the second ceramic layer (122) and the second base copper layer (124) and between the second ceramic layer (122) and the second outer copper layer (126).
  • the first ceramic layer (112) may have a first surface (1121) and a second surface (1122) that face each other.
  • first surface (1121) is depicted as the upper surface
  • second surface (1122) is depicted as the lower surface with respect to the first ceramic layer (112).
  • the second ceramic layer (122) may have a third surface (121) and a fourth surface (1222) that face each other.
  • the third surface (1121) is depicted as the lower surface and the fourth surface (1122) is depicted as the lower surface with respect to the second ceramic layer (122).
  • the first ceramic layer (112) and the second ceramic layer (122) may have excellent thermal conductivity and electrical insulation.
  • the first ceramic layer (112) and the second ceramic layer (122) may be made of a ceramic material and may include, for example, at least one of Al 2 O 3 , AlN, Zirconia Toughened Alumina (ZTA), and Si 3 N 4 .
  • the first base copper layer (114) may be disposed on the first surface (1121) of the first ceramic layer (112).
  • the second base copper layer (124) may be disposed on the third surface (1121) of the second ceramic layer (122).
  • the first base copper layer (114) of the first ceramic substrate (110) and the second base copper layer (124) of the second ceramic substrate (120) may be disposed so as to face each other adjacent to each other.
  • the first base copper layer (114) and the second base copper layer (124) can be formed using TPC technology, DBC technology, DPC technology, or AMB technology.
  • the first base copper layer (114) and the second base copper layer (124) can have a total thickness in a range of, for example, 100 ⁇ m to 1000 ⁇ m, and can have a total thickness of, for example, about 300 ⁇ m.
  • the first base copper layer (114) and the second base copper layer (124) may be formed as TPC (thick printed copper) copper layers using a TPC (thick printed copper) technology.
  • the TPC technology may refer to a technology of forming a copper layer having a predetermined thickness by printing, pressing, and sintering using a copper-containing paste.
  • the TPC copper layer may be formed by printing a copper-containing paste on one or both sides of a ceramic layer to form a paste layer, and pressing and sintering the paste layer. Since the TPC technology forms the TPC copper layer using a screen printing method, it does not require an additional etching process, and can freely implement various patterning shapes.
  • the TPC technology may allow one layer formed in one process cycle of printing, pressing, and sintering to have a very small thickness, and the one layer may have a thickness in the range of, for example, 10 ⁇ m to 100 ⁇ m.
  • the thickness of the TPC copper layer can be increased by repeatedly performing the above process cycle to form multiple layers, thickness control can be facilitated.
  • the TPC copper layer can secure uniformity in thickness, surface quality, etc. as a whole.
  • nickel (Ni), silver (Ag), gold (Au), etc. can be plated on the TPC copper layer.
  • the first base copper layer (114) and the second base copper layer (124) may be formed as DBC copper layers formed using a DBC (direct bonded copper) technology.
  • the DBC technology may refer to a technology of forming a copper layer by directly attaching a copper foil to a ceramic layer.
  • the DBC copper layer may be formed by placing a copper foil on one or both sides of a ceramic layer, performing a high-temperature oxidation process at a temperature in the range of 1000° C. to 1080° C., and bonding the copper foil to the ceramic layer using a copper-oxygen eutectic liquid. The bonding may be performed in a nitrogen atmosphere containing about 30 ppm of oxygen at a temperature of 1083° C.
  • the DBC copper layer may be patterned using an etching process. Additionally, nickel (Ni), silver (Ag), gold (Au), etc. can be plated on the DBC copper layer.
  • the first base copper layer (114) and the second base copper layer (124) may be formed as DPC copper layers formed using a DPC (direct plating copper) technology.
  • the DPC technology may refer to a technology of forming a copper layer by using a thin film process, an etching process, and a plating process.
  • the DPC copper layer may be formed by forming a seed layer of titanium (Ti), titanium-tungsten (TiW), or the like on one side or both sides of a ceramic layer, and then plating copper (Cu) on the seed layer.
  • a photoresist pattern may be formed on the seed layer, and then copper (Cu) may be plated on the photoresist pattern, and the photoresist pattern may be removed to form the DPC copper layer having a desired pattern. Then, if necessary, the DPC copper layer may be patterned using an etching process.
  • Cu copper
  • the first base copper layer (114) and the second base copper layer (124) may be formed of an AMB (active metal brazing) copper layer formed using an AMB technology.
  • the AMB technology may refer to a technology of bonding a ceramic layer and a copper layer using an active metal foil. An active metal foil and a copper foil are sequentially placed on one or both sides of a ceramic layer, and the active metal foil is melted by heating. As shown in FIG. 2, an active metal brazing layer is formed, thereby bonding the ceramic layer and the copper foil to each other. Accordingly, the active metal brazing layer may perform a role of bonding the ceramic layer and the first base copper layer and a role of bonding the ceramic layer and the second base copper layer. Subsequently, if necessary, the AMB copper layer may be patterned using an etching process.
  • the active metal brazing layer may include a metal or metal alloy having a lower melting point than copper constituting the copper foil, and may include, for example, an active metal alloy in which copper, aluminum, nickel, or silver is added to titanium, hafnium, nickel, molybdenum, or zirconium, which are active with respect to oxygen, to lower the melting point.
  • the active metal brazing layer may include, for example, an alloy including at least one of silver (Ag), copper (Cu), and titanium (Ti).
  • the active metal brazing layer may include at least one of aluminum (Al), titanium (Ti), nickel (Ni), niobium (Nb), and molybdenum (Mo).
  • the first outer copper layer (116) may be disposed on a second surface (1122) opposite to the first surface (1121) of the first ceramic layer (112).
  • the second outer copper layer (126) may be disposed on a fourth surface (1222) opposite to the third surface (1121) of the second ceramic layer (122).
  • the first outer copper layer (116) and the second outer copper layer (126) can function as a warpage prevention layer that prevents the ceramic layer (122) from warping during a sintering process for forming the first base copper layer (114) and the second base copper layer (124) and a sintering process for forming the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160).
  • the first outer copper layer (116) and the second outer copper layer (126) can provide a path for dissipating heat generated from the power semiconductor element to the outside.
  • a heat dissipation structure (not shown) can be attached to the first outer copper layer (116) and the second outer copper layer (126).
  • the first outer copper layer (116) and the second outer copper layer (126) can be formed as a single layer or as a plurality of layers.
  • the first outer copper layer (116) and the second outer copper layer (126) can be formed in the same manner as the first base copper layer (114) and the second base copper layer (124).
  • the first outer copper layer (116) and the second outer copper layer (126) can be formed using the above-described TPC technology, DBC technology, DPC technology, or AMB technology.
  • the first outer copper layer (116) and the second outer copper layer (126) can each include the same material as the first base copper layer (114) and the second base copper layer (124), and can be formed simultaneously.
  • the first active metal brazing layer (118) may be disposed on the first surface (1121) and the second surface (1122) of the first ceramic layer (112).
  • the first base copper layer (114) may be disposed on the first active metal brazing layer (118) of the first surface (1121).
  • the first active metal brazing layer (118) may be interposed between the first ceramic layer (112) and the first base copper layer (114), thereby bonding the first ceramic layer (112) and the first base copper layer (114) to each other.
  • the first outer copper layer (116) may be disposed on the first active metal brazing layer (118) of the second surface (1122).
  • a first active metal brazing layer (118) is interposed between the first ceramic layer (112) and the first outer copper layer (116), so that the first ceramic layer (112) and the first outer copper layer (116) can be joined to each other.
  • the second active metal brazing layer (128) may be disposed on the third side (1221) and the fourth side (1222) of the second ceramic layer (122).
  • the second base copper layer (124) may be disposed on the second active metal brazing layer (128) of the third side (1221).
  • the second active metal brazing layer (128) may be interposed between the second ceramic layer (122) and the second base copper layer (124), thereby bonding the second ceramic layer (122) and the second base copper layer (124) to each other.
  • the second outer copper layer (126) may be disposed on the second active metal brazing layer (128) of the fourth side (1222).
  • a second active metal brazing layer (128) is interposed between the second ceramic layer (122) and the second outer copper layer (126), so that the first ceramic layer (122) and the second outer copper layer (126) can be joined to each other.
  • an additional etching process may be required when applying the DBC technology, the DPC technology, or the AMB technology. Therefore, when using this etching process, there is a limitation in that there is a limitation on the pattern shape, and it may be difficult to form a difference in thickness between patterns or to form a second pattern and a third pattern on the pattern in order to respond to various types of semiconductor devices.
  • the pattern when applying the TPC technology to form the first base copper layer (114) or the second base copper layer (124), the pattern can be easily formed during printing, and an additional etching process may not be required.
  • an additional etching process may be required when applying the DBC technology, the DPC technology, or the AMB technology. Therefore, when using this etching process, there is a limitation in that there is a limitation on the pattern shape, and it may be difficult to form a difference in thickness between patterns or to form a second pattern and a third pattern on the pattern in order to respond to various types of semiconductor devices.
  • the pattern when applying the TPC technology to form the first base copper layer (114) and the second base copper layer (124), the pattern can be easily formed during printing, and an additional etching process may not be required.
  • At least one power semiconductor element (130) may be placed between a first ceramic substrate (110) and a second ceramic substrate (120).
  • the first ceramic substrate (110) and the second ceramic substrate (120) may perform a function of dissipating heat generated from the power semiconductor element (130) to the outside.
  • a heat dissipation structure (not shown) may be placed on an outer surface of at least one of the first ceramic substrate (110) and the second ceramic substrate (120).
  • the power semiconductor element (130) may be attached to the first base copper layer (114) of the first ceramic substrate (110) using various attachment layers and attachment methods, such as a conductive adhesive layer and a conductive solder layer, which are exemplary and the technical idea of the present invention is not limited thereto.
  • the power semiconductor element (130) may be, for example, a GTO (gate turn-off thyristor) semiconductor element or an IGBT (insulated gate bipolar mode transistor) semiconductor element, and may perform an operation of converting power supplied from a power supply unit such as a battery into power for driving a motor through a switching operation and supplying the converted power.
  • a power supply unit such as a battery into power for driving a motor through a switching operation and supplying the converted power.
  • the case where the power semiconductor element (130) is another semiconductor element is also included in the technical idea of the present invention.
  • the power semiconductor element (130) may include electrode members formed on the upper and lower portions. This will be described with reference to FIG. 3.
  • FIG. 3 is a schematic diagram illustrating a power semiconductor element included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the power semiconductor element (130) may include a first electrode (131) and a second electrode (132) on a first side (138), and a third electrode (133) on a second side (139) opposite to the first side (138).
  • the first electrode (131) may be referred to as an emitter electrode
  • the second electrode (132) may be referred to as a gate electrode or a collector electrode
  • the third electrode (133) may be referred to as a base electrode.
  • the first electrode (131) and the second electrode (132) may be separated from each other for insulation and disposed on the first side (138).
  • the second electrode (132) may have a smaller area than the first electrode (131).
  • the arrangement of these electrodes is exemplary, and the technical idea of the present invention is not limited thereto.
  • the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) can be formed using the above-described TPC technique of forming copper layers by printing, pressing, and sintering.
  • the first copper structure plug (140) is positioned between the second ceramic substrate (120) and the power semiconductor element (130) to electrically connect the first electrode (131) of the power semiconductor element (130) to the second base copper layer (124) of the second ceramic substrate (120).
  • the second copper structure plug (150) is positioned between the second ceramic substrate (120) and the power semiconductor element (130) to electrically connect the second electrode (132) of the power semiconductor element (130) to the second base copper layer (124) of the second ceramic substrate (120).
  • the third copper structure plug (160) is positioned between the first ceramic substrate (110) and the second ceramic substrate (120) to electrically connect the first base copper layer (114) of the first ceramic substrate (110) and the second base copper layer (124) of the second ceramic substrate (120).
  • the third electrode (133) of the power semiconductor element (130) can be electrically connected to the first base copper layer (114) of the first ceramic substrate (110).
  • At least one of the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) can allow a high current to flow from the power semiconductor element (130).
  • the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) can perform the function of a spacer in addition to the electrical connection described above.
  • the mold layer (170) can fill the space between the first ceramic substrate (110) and the second ceramic substrate (120).
  • the mold layer (170) can surround the power semiconductor element (130), the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) and insulate them from each other.
  • the mold layer (170) can be composed of, for example, EMC (epoxy molding compound).
  • the lead frame (180) can be electrically connected to the first base copper layer (114) of the first ceramic substrate (110) and can provide an electrical connection with the outside.
  • the case where the lead frame (180) can be electrically connected to the second base copper layer (124) of the second ceramic substrate (120) and provides an electrical connection with the outside is also included in the technical idea of the present invention.
  • a part of the lead frame (180) can be covered by the mold layer (170).
  • the lead frame (180) can include a conductive material, for example, can include a metal.
  • the first electrode (131) of the power semiconductor element (130) can be electrically connected to the outside through an electrical path composed of a first copper structure plug (140), a second base copper layer (124), a third copper structure plug (160), a first base copper layer (114), and a lead frame (180).
  • the second electrode (132) of the power semiconductor element (130) can be electrically connected to the outside through an electrical path composed of a second copper structure plug (150), a second base copper layer (124), a third copper structure plug (160), a first base copper layer (114), and a lead frame (180).
  • the third electrode (133) of the power semiconductor element (130) can be electrically connected to the outside through an electrical path composed of the first base copper layer (114) and the lead frame (180).
  • the first electrode (131), the second electrode (132), and the third electrode (133) of the power semiconductor element (130) can be electrically insulated from each other within the wireless double-sided cooling power module (100).
  • the first base copper layer (114), the second base copper layer (124), and the lead frame (180) may have an appropriate pattern shape to provide the electrical path described above.
  • FIGS. 4 and 5 are cross-sectional views illustrating a wireless double-sided cooling power module according to one embodiment of the present invention.
  • a wireless double-sided cooling power module (100b) includes a first ceramic substrate (110a) including a first active metal brazing layer (118) and a second ceramic substrate (120) not including an active metal brazing layer. Descriptions of components identical or similar to those in the above-described embodiment will be omitted.
  • a wireless double-sided cooling power module (100c) includes a first ceramic substrate (110) that does not include an active metal brazing layer and a second ceramic substrate (120a) that includes a second active metal brazing layer (128). Descriptions of components identical or similar to those in the above-described embodiment will be omitted.
  • the first base copper layer (114) and the second base copper layer (124) may be copper foil formed by DBC technology or AMB technology, or may be a copper plating layer formed by DPC technology.
  • the first base copper layer (114) and the second base copper layer (124) may be a sintered body of a copper-containing paste formed by TPC technology.
  • first base copper layer (114) and the second base copper layer (124) formed using TPC (thick printed copper) technology will be described in detail.
  • FIG. 6 is a cross-sectional view illustrating a first base copper layer included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the first base copper layer (114) can be formed by printing a copper-containing paste to form a paste layer and pressing and sintering the paste layer.
  • the first base copper layer (114) may be disposed on a portion of the first ceramic layer (112).
  • the first base copper layer (114) may be formed using the TPC technique described above.
  • the first base copper layer (114) may be composed of a plurality of layers.
  • the first base copper layer (114) may include, for example, at least one of a bonding copper layer (1141), a laminated copper layer (1142), and a surface copper layer (1143).
  • the thickness of the first base copper layer (114) can be varied by controlling the thickness of the relatively thick laminated copper layer (1142).
  • the laminated copper layer (1142) can have a greater thickness than the bonded copper layer (1141) and the surface copper layer (1143).
  • the bonded copper layer (1141) and the surface copper layer (1143) can have the same thickness or different thicknesses.
  • the bonded copper layer (1141) can have a thickness of, for example, 1 ⁇ m to 100 ⁇ m, for example, about 20 ⁇ m.
  • the laminated copper layer (1142) can have a thickness of, for example, 100 ⁇ m to 1000 ⁇ m.
  • the surface copper layer (1143) can have a thickness of, for example, 1 ⁇ m to 100 ⁇ m, for example, about 30 ⁇ m.
  • the bonding copper layer (1141) may be disposed on at least a portion of the first ceramic layer (112).
  • the laminated copper layer (1142) may be disposed on the bonding copper layer (1141).
  • the surface copper layer (1143) may be disposed on the laminated copper layer (1142).
  • this is exemplary and the technical idea of the present invention is not limited thereto.
  • the first base copper layer (114) may be configured to include the bonding copper layer (1141) and the surface copper layer (1143), excluding the laminated copper layer (1142).
  • the first base copper layer (114) may be configured to include a bonding copper layer (1141) and a laminated copper layer (1142), excluding the surface copper layer (1143).
  • the bonding copper layer (1141) can be formed by printing a copper-containing bonding paste on the first ceramic layer (112) using a screen printing method or the like to form a bonding paste layer, drying to remove the solvent, pressing the dried bonding paste layer, and then heating to sinter it.
  • the laminated copper layer (1142) can be formed by printing a copper-containing laminated paste on the bonded copper layer (1141) using a screen printing method or the like to form a laminated paste layer, then drying to remove the solvent, pressing the dried laminated paste layer, and then heating to sinter it.
  • the surface copper layer (1143) can be formed by printing a copper-containing surface paste on the laminated copper layer (1142) using a screen printing method or the like to form a surface paste layer, then drying to remove the solvent, pressing the dried surface paste layer, and then heating to sinter it.
  • the internal pores of the bonding paste layer, the laminated paste layer, and the surface paste layer can be reduced and the uniformity of height can be secured.
  • the above-described printing, pressing, and sintering steps can be performed repeatedly. For example, after forming one paste layer in one cycle of the printing and pressing, the printing and pressing can be performed again to further form one subsequent paste layer on the previously formed paste layer, and this can be repeated to form a plurality of paste layers.
  • the plurality of paste layers can be sintered together.
  • the copper layer can be formed. That is, sintering can be performed once or more for one copper layer constituting the first base copper layer (114). The number of times of the printing, pressing, and sintering can be varied.
  • the above copper-containing bonding paste may include, for example, copper particles, glass frit, inorganic particles, copper oxide particles, a solvent and a binder.
  • the copper-containing laminate paste may include, for example, copper particles, inorganic particles, a solvent, and a binder. Compared to the copper-containing bonding paste, the copper-containing laminate paste may not include glass frit and copper oxide particles.
  • the copper-containing surface paste may include copper particles, copper oxide particles, a solvent, and a binder. Compared to the copper-containing bonding paste, the copper-containing surface paste may not include glass frit and inorganic particles.
  • the above glass frit is a sintering aid that helps sintering of copper (Cu) particles and can provide better bonding between the first ceramic layer (112) and the bonding copper layer (1141).
  • the above inorganic particles may include at least one powder of Al 2 O 3 , CaO, and ZrO 2 .
  • the above inorganic particles may perform a function of reducing the shrinkage rate of the paste.
  • the shrinkage rate may be measured by printing the paste in a disk shape, drying and sintering it, and comparing the diameter of the disk after drying and after sintering.
  • the above copper oxide particles may include at least one of CuO and Cu 2 O, and may perform a function of improving bonding properties with a component to be bonded.
  • the above copper oxide particles may form a process liquid phase during the sintering process.
  • the first ceramic layer (112) includes alumina (Al 2 O 3 )
  • the copper oxide may react with alumina to form CuAlO 2 , CuAl 2 O 4 , etc., thereby improving bonding properties.
  • the above copper particles may be composed of copper and may be a main component constituting the first base copper layer (114).
  • the above copper particles may include fine copper particles having an average particle diameter ranging from 1 ⁇ m to 10 ⁇ m and may be included in an amount of 60 wt% to 95 wt% of the paste.
  • the shrinkage ratio of the copper-containing laminate paste may be higher than the shrinkage ratio of the copper-containing bonding paste.
  • the shrinkage ratio of the copper-containing surface paste may be higher than the shrinkage ratio of the copper-containing bonding paste and the shrinkage ratio of the copper-containing bonding paste.
  • the shrinkage ratio of the copper-containing bonding paste may be, for example, 0% to 3%.
  • the shrinkage ratio of the copper-containing laminate paste may be, for example, 3% to 9%.
  • the shrinkage ratio of the copper-containing surface paste may be, for example, 10% to 15%.
  • the copper-containing bonding paste, the copper-containing laminate paste, and the copper-containing surface paste can change the types and contents of glass frit, inorganic particles, copper oxide particles, copper particles, solvent, and binder in order to implement a desired thermal expansion coefficient and shrinkage ratio.
  • the description of the composition and paste for the first base copper layer (114) described above can be applied equally to the second base copper layer (124).
  • the second base copper layer (124) can include a bonding copper layer, a laminated copper layer, and a surface copper layer, similarly to the first base copper layer (114) described above.
  • first copper structure plug (140), a second copper structure plug (150), and a third copper structure plug (160) formed using TPC (thick printed copper) technology will be described in detail.
  • the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) may be sintered bodies of a copper-containing paste formed using TPC technology.
  • FIG. 7 is a cross-sectional view illustrating a copper structure plug included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) can be formed by commonly printing and drying a copper-containing paste to form a paste layer, and pressing and sintering the paste layer.
  • the first copper structure plug (140), the second copper structure plug (150), and the third copper structure plug (160) can be formed using the TPC technology described above.
  • the first copper structure plug (140) may have a thermal expansion coefficient in the range of, for example, 5 x 10 -6 /°C to 20 x 10 -6 /°C in order to reduce the difference in thermal expansion coefficient with the power semiconductor element.
  • the first copper structure plug (140) may be a porous porous structure having pores therein.
  • the first copper structure plug (140) may have a differential porosity. This means that the first copper structure plug (140) includes a region on the upper side having a lower porosity than the lower side that is relatively adjacent to the second base copper layer (124).
  • the porosity of the first copper structure plug (140) may decrease from the lower side relatively adjacent to the first base copper layer (114) toward the upper side.
  • the first copper structure plug (140) may be composed of a plurality of layers and may include a first base portion (141) and a first surface portion (142) that is disposed on the first base portion (141) and has a lower porosity than the first base portion (141).
  • the first base portion (141) may have a porosity in a range of, for example, more than 5 vol% and less than or equal to 20 vol%.
  • the first surface portion (142) may have a porosity in a range of, for example, more than 0 vol% and less than or equal to 5 vol%.
  • the pores perform a buffer function against thermal shock, thereby reducing thermal stress and increasing resistance to thermal fatigue destruction due to thermal stress under repeated thermal history.
  • the first surface portion (142) since the first surface portion (142) has a relatively low porosity, it can have a smooth surface, and thus the bonding of the power semiconductor elements in contact can be improved. If the first surface portion (142) has a high porosity, void defects may remain on the bonding surface due to the pores, and the bonding of the power semiconductor elements may become poor. Therefore, it is desirable to control the first surface portion (142) so that there are no pores or the porosity is low.
  • the particle size and fraction of the copper particles included in the paste can be controlled. If the particle size of the copper particles is large or the fraction is low, the porosity can increase, and if the particle size of the copper particles is small or the fraction is large, the porosity can decrease.
  • the first paste forming the first base portion (141) may include copper particles having an average particle diameter in a range of more than 3 ⁇ m and less than or equal to 10 ⁇ m.
  • the second paste forming the first surface portion (142) may include copper particles having an average particle diameter in a range of 100 nm to 3 ⁇ m. That is, the average particle diameter of the copper particles included in the second paste may be smaller than the average particle diameter of the copper particles included in the first paste. Due to this difference in the average particle diameters of the copper particles, the first surface portion (142) may have a denser microstructure and a lower porosity than the first base portion (141).
  • the first copper structure plug (140) can be varied in thickness for electrical connection.
  • the first base portion (141) can have a greater thickness than the first surface portion (142).
  • the first surface portion (142) can have a thickness in the range of, for example, 1 ⁇ m to 100 ⁇ m, for example, about 20 ⁇ m.
  • the first copper structure plug (140) can be formed using the TPC technology described above.
  • the first copper structure plug (140) can be formed using a copper-containing paste including copper particles, inorganic particles, a solvent, and a binder.
  • the copper-containing paste may further include copper oxide particles.
  • the first copper structure plug (140) can be formed by printing the copper-containing paste using a screen printing method or the like to form a paste layer, drying to remove the solvent, pressing the dried paste layer, and then heating to sinter it.
  • the above-described printing, pressing, and sintering steps can be performed repeatedly. For example, after forming one paste layer in one cycle of the printing and pressing, the printing and pressing can be performed again to further form one subsequent paste layer on the previously formed paste layer, and this can be repeated a plurality of times to form a plurality of paste layers.
  • the plurality of paste layers can be sintered together.
  • the copper layer can be formed. That is, sintering can be performed one or more times for one copper layer constituting the first copper structure plug (140). The number of times of the printing, pressing, and sintering can be varied.
  • the first copper structure plug (140) may have a surface from which oxides have been removed by blasting treatment.
  • the description of the configuration and paste for the first copper structure plug (140) described above can be equally applied to the second copper structure plug (150) and the third copper structure plug (160).
  • the second copper structure plug (150) can include a second base portion (151) and a second surface portion (152), which correspond to the first base portion (141) and the first surface portion (142), respectively.
  • the third copper structure plug (160) can include a third base portion (161) and a third surface portion (162), which correspond to the first base portion (141) and the first surface portion (142), respectively.
  • the second copper structure plug (150) and the third copper structure plug (160) may be porous porous structures having pores therein.
  • the second copper structure plug (150) and the third copper structure plug (160) may have differential porosity. This means that the second copper structure plug (150) and the third copper structure plug (160) include a region on the upper side having a lower porosity than the lower side that is relatively adjacent to the second base copper layer (124).
  • the second copper structure plug (150) and the third copper structure plug (160) may have a porosity that decreases from the lower side that is relatively adjacent to the second base copper layer (124) toward the upper side.
  • FIG. 8 is a photograph showing the microstructure of a copper structure plug included in a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the internal pores of the first base portion (141) and the first surface portion (142) of the first copper structure plug (140) are shown.
  • the first surface portion (142) has a low porosity, and the size of each pore is also small. That is, the first surface portion (142) has a dense microstructure.
  • the Mo-Cu spacer according to the prior art is a metalworking material that substantially does not include pores inside and has a porosity of about 0%, so it has high thermal stress and low thermal fatigue fracture characteristics.
  • the copper structure plug according to the present invention includes a lower layer having a high porosity, thereby providing low thermal stress and improved resistance to thermal fatigue fracture, and further includes an upper layer having a low porosity, thereby preventing bonding defects in power semiconductor devices.
  • microstructural description for the first copper structure plug (140) can be equally applied to the second copper structure plug (150) and the third copper structure plug (160).
  • FIGS. 9A and 9B are cross-sectional views illustrating a pyramidal copper structure plug of a ceramic circuit board according to one embodiment of the present invention.
  • the first copper structure plug (140) may have a truncated pyramid shape in which the planar area is smaller at the top than at the bottom as the planar area decreases from the bottom side relatively adjacent to the second base copper layer (124). That is, the first copper structure plug (140) may have a trapezoidal vertical cross-sectional shape.
  • the first copper structure plug (140) may have a polygonal shape such as a triangle, a square, a pentagon, or a hexagon in the shape of a horizontal cross-section, or a circle such as a square, an oval, or a semicircle.
  • the first copper structure plug (140) Since the first copper structure plug (140) has a pyramidal shape, it can be stably joined to a power semiconductor element. In addition, it can prevent an undercut phenomenon formed by etching.
  • pyramidal shapes can be formed as follows.
  • the first layer (151_1) of the first base portion (141) After printing and pressing the first layer (151_1) of the first base portion (141) and then sintering, it can naturally shrink due to volume reduction caused by evaporation of the solvent and sintering of the copper particles. At this time, the lower side of the first layer (151_1) is attached to the second base copper layer (124), so that shrinkage occurs little, while the upper side shrinks greatly. Then, when the second layer (151_2) is printed, the area of the upper side that has shrunk corresponds to the area, so that the lower area of the second layer (150_2) is reduced. When the second layer (151_2) is sintered, the upper side shrinks more than the lower side, similar to the first layer (150_1).
  • a plurality of layers having an upper side having a smaller area than the lower side are formed.
  • a first surface portion (142) having an upper side having a smaller area than a lower side is formed on the nth layer (150_n). Accordingly, a first copper structure plug (140) having a pyramidal shape can be formed.
  • the application area of the paste applied during printing can be reduced from the bottom to the top using TPC technology to implement the pyramidal shape.
  • the application area can be reduced to 1 area% to 10 area%, for example, 3 area% to 5 area%.
  • the second copper structure plug (150) and the third copper structure plug (160) may have a pyramidal shape whose planar area decreases from the lower side relatively adjacent to the second base copper layer (124) toward the upper side.
  • FIG. 9b photographs of an actual implementation of such a pyramid-shaped copper structure are shown.
  • FIG. 10 is a flow chart illustrating a method for manufacturing a wireless double-sided cooling power module according to one embodiment of the present invention.
  • the method for manufacturing the wireless double-sided cooling power module includes the steps of providing a first ceramic substrate (S110); providing a second ceramic substrate (S120); mounting a power semiconductor element on the first ceramic substrate (S130); forming a copper structure plug on the second ceramic substrate (S140); connecting a lead frame to the first ceramic substrate (S150); bonding the power semiconductor element and the copper structure plug (S160); and forming a mold layer filling a space between the first ceramic substrate and the second ceramic substrate (S170).
  • the step (S110) of providing the first ceramic substrate may be performed by providing a first ceramic substrate including a first ceramic layer, a first base copper layer disposed on a first surface of the first ceramic layer, and a first outer copper layer disposed on a second surface of the first ceramic layer opposite to the first surface.
  • the first base copper layer may be a TPC copper layer, a DBC copper layer, a DPC copper layer, or an AMB copper layer.
  • the first outer copper layer may be formed by the same method as the method of forming the first base copper layer as described above, and may be formed simultaneously with the first base copper layer.
  • the step (S120) of providing the second ceramic substrate may be accomplished by providing a second ceramic substrate, which is disposed facing the first ceramic substrate and includes a second ceramic layer, a second base copper layer disposed on a third surface of the second ceramic layer, and a second outer copper layer disposed on a fourth surface of the second ceramic layer opposite to the third surface.
  • the second base copper layer may be a TPC copper layer, a DBC copper layer, a DPC copper layer, or an AMB copper layer.
  • the second outer copper layer may be formed by the same method as the method of forming the second base copper layer described above, and may be formed simultaneously with the second base copper layer.
  • the step (S130) of mounting the power semiconductor element may be performed by mounting a power semiconductor element including a first electrode, a second electrode, and a third electrode on the first base copper layer of the first ceramic substrate.
  • the power semiconductor element may be mounted by attaching it to the first ceramic substrate using a conductive adhesive, a conductive solder layer, or the like.
  • the step (S140) of forming the copper structure plug may be performed by forming the copper structure plug by printing, pressing, and sintering a copper-containing paste on the second base copper layer of the second ceramic substrate, so as to be disposed between the second ceramic substrate and the power semiconductor element and electrically connected to the power semiconductor element.
  • the step (S140) of forming the copper structure plug may include a printing step of printing a copper-containing paste on a portion of the second base copper layer to form a paste layer; a pressing step of pressing the paste layer; and a sintering step of sintering the paste layer to form the copper structure plug.
  • a copper-containing paste may be formed on the second base copper layer by screen printing.
  • the printing step may include an intentional drying step in which all or part of the solvent contained in the paste layer is removed by maintaining the temperature in the range of 10° C. to 100° C. in the air. Alternatively, the drying may be performed unintentionally by natural drying.
  • the paste layer can be pressed to form a uniform thickness.
  • the boundary of the paste layer can have a higher viscosity than the center because the flow speed of the copper-containing paste is reduced, and can be formed to a thick thickness. By pressing the paste layer, such thickness deviation can be reduced. In addition, the internal pores of the paste layer can be removed or reduced.
  • the copper particles contained in the paste layer can be sintered.
  • the sintering step can be performed in an inert atmosphere, such as a nitrogen atmosphere, an argon atmosphere, or the like, or can be performed in an air atmosphere.
  • the sintering step can be performed in a continuous heat treatment furnace, such as a muffle type heat treatment furnace, or in a batch type heat treatment furnace, such as a box oven.
  • the above sintering step can be performed at a temperature of, for example, less than 900°C, and can be performed at a temperature in the range of, for example, 500°C to 800°C for 10 minutes to 120 minutes.
  • the sintering temperature is preferably lower than the melting temperature of the active metal brazing layer, and is preferably lower, for example, in the range of 50°C to 100°C.
  • the sintering may be performed by including a bake out step at a temperature ranging from 300° C. to 500° C. by supplying a small amount of water vapor or oxygen to a nitrogen atmosphere to remove the binder contained in the paste layer, and a liquid-phase sintering step of the copper particles contained in the paste layer.
  • a bake out step at a temperature ranging from 300° C. to 500° C. by supplying a small amount of water vapor or oxygen to a nitrogen atmosphere to remove the binder contained in the paste layer, and a liquid-phase sintering step of the copper particles contained in the paste layer.
  • this is exemplary and the technical idea of the present invention is not limited thereto, and the bake out step may be omitted.
  • the step (S140) of forming the copper structure plug may be performed so that the copper structure plug has a differential porosity.
  • the copper structure plug may include a region on the upper side having a lower porosity than a region on the lower side that is relatively adjacent to the second base copper layer.
  • the step (S140) of forming the copper structure plug may include: a step of forming a base portion; and a step of forming a surface portion on the base portion having a lower porosity than the base portion.
  • the step of forming the base portion may be performed using a paste including copper particles having an average particle diameter in a range of more than 3 ⁇ m and less than or equal to 10 ⁇ m.
  • the step of forming the surface portion may be performed using a paste including copper particles having an average particle diameter in a range of 100 nm to 3 ⁇ m on the base portion.
  • the base portion may have a porosity in a range of more than 5 vol% and less than or equal to 20 vol%.
  • the surface portion may have a porosity in a range of more than 0 vol% and less than or equal to 5 vol%.
  • the printing step, the pressing step, and the sintering step for forming the copper structure plug may be performed repeatedly. For example, after the printing step and the pressing step are performed in one cycle to form one paste layer, the printing step and the pressing step are performed again to further form one subsequent paste layer on the previously formed paste layer, thereby forming a plurality of paste layers.
  • the plurality of paste layers may be sintered together.
  • the sintering step by repeatedly performing the sintering step, the copper structure plug can be formed. That is, the sintering step may be performed once or more for one copper layer constituting the copper structure plug.
  • the number of times of the printing step, the pressing step, and the sintering step may be variously changed.
  • the ceramic layer may warp during sintering.
  • paste layers may be formed on both sides of the ceramic layer and sintered together to form the first base copper layer and the first outer copper layer at the same time.
  • the second base copper layer and the second outer copper layer may be formed at the same time in the same manner.
  • the copper structure plug may be additionally formed at the same time as the second base copper layer and the second outer copper layer. It is preferable that the paste layers formed on both sides and sintered at the same time based on the ceramic layer have the same volume, or the volume ratio may be, for example, 90% to 100%.
  • the volume ratio may be a percentage obtained by dividing the volume of the paste layer having a small volume by the volume of the paste layer having a large volume. In addition, the volume may be calculated from the weight of the paste layer.
  • the application area of the copper-containing paste is reduced from the lower side relatively adjacent to the second base copper layer toward the upper side, thereby allowing the copper structure plug to have a pyramidal shape.
  • the above copper structure plug may include a first copper structure plug, a second copper structure plug, and a third copper structure plug.
  • the first copper structure plug, the second copper structure plug, and the third copper structure plug may be formed simultaneously in the same process.
  • the third copper structure plug may have a longer length than the first copper structure plug and the second copper structure plug, and for this purpose, printing, drying, and pressing steps for forming the third copper structure plug may be further performed.
  • the sintering steps of the first copper structure plug, the second copper structure plug, and the third copper structure plug may be performed simultaneously.
  • the above first copper structure plug can be formed to electrically connect the second base copper layer of the second ceramic substrate and the first electrode of the power semiconductor element.
  • the second copper structure plug may be formed to electrically connect the second base copper layer of the second ceramic substrate and the second electrode of the power semiconductor element.
  • the third copper structure plug may be formed to electrically connect the first base copper layer of the first ceramic substrate and the second base copper layer of the second ceramic substrate.
  • a blasting treatment may further be performed by blasting the surface of at least one of the base copper layer, the outer copper layer, and the copper structure plug with ceramic particles such as sand.
  • Solder is applied on the base copper layer and a power semiconductor device is mounted.
  • the copper structure plug is electrically connected to the power semiconductor device.
  • the process of sintering the base copper layer and the copper structure plug is heat-treated at a high temperature in the air, so that a copper oxide layer may be formed on the surface.
  • oxidation by oxygen may occur.
  • the copper oxide layer may reduce the adhesion of the power semiconductor device to the base copper layer and deteriorate the electrical connection of the power semiconductor device to the copper structure plug.
  • the copper oxide layer may be removed by blasting fine ceramic particles onto the surfaces of each of the base copper layer, the outer copper layer, and the copper structure plug.
  • the blasting may be referred to as sand blasting.
  • the step (S150) of connecting the lead frame to the first ceramic substrate can be accomplished by connecting the first base copper layer of the first ceramic substrate and the lead frame.
  • the connection can be accomplished using a conductive adhesive, a conductive solder layer, or the like.
  • the step (S150) of connecting the lead frame is optional and can be omitted.
  • the step (S160) of bonding the power semiconductor element and the copper structure plug is to place the first ceramic substrate and the second ceramic substrate so as to face each other, and bond the power semiconductor element and the copper structure plug.
  • the first copper structure plug and the first electrode of the power semiconductor element can be bonded.
  • the second copper structure plug and the second electrode of the power semiconductor element can be bonded.
  • the third copper structure plug and the first base copper layer of the first ceramic substrate can be bonded.
  • the bonding can be performed using a conductive adhesive, a conductive solder layer, or the like.
  • the step of forming the mold layer (S170) can be performed by forming a mold layer that fills the space by injecting a mold material into the space between the first ceramic substrate and the second ceramic substrate and solidifying the mold material.
  • the power semiconductor element can be covered by the mold layer.
  • FIG. 11 is a result of an ultrasonic inspection showing whether a defect occurs according to the sintering temperature of a ceramic substrate included in a wireless double-sided cooling power module according to an embodiment of the present invention.
  • the sintering temperature of the base copper layer and the copper structure plug is preferably lower than 900°C, and for example, a temperature in the range of 500°C to 800°C is preferable.
  • FIG. 12 is a photograph showing the surface state of a ceramic substrate included in a wireless double-sided cooling power module according to one embodiment of the present invention before and after blasting treatment.
  • FIG. 12 the surface state of the base copper layer before and after blasting treatment is shown.
  • blasting treatment is not performed, it can be seen that copper oxide exists on the surface of the base copper layer and the surface is rough.
  • the copper oxide is removed by blasting treatment, resulting in a smooth surface, and that the surface becomes smoother as the number of blasting cycles increases. Therefore, after blasting treatment, the power semiconductor device mounted on the base copper layer can be more stably bonded.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un module d'alimentation sans fil refroidi sur les deux surfaces, qui utilise une structure de cuivre pour câblage au lieu d'un fil de liaison, et son procédé de fabrication. Le module d'alimentation sans fil refroidi sur les deux surfaces, selon un mode de réalisation de la présente invention, comprend : un premier substrat céramique qui comprend une première couche céramique et une première couche de cuivre de base disposée sur une première surface de la première couche céramique ; un second substrat céramique qui est disposé de façon à faire face au premier substrat céramique et comprend une seconde couche céramique et une seconde couche de cuivre de base disposée sur une troisième surface de la seconde couche céramique ; un dispositif à semi-conducteur qui est monté sur le premier substrat en céramique et comprend une première électrode, une seconde électrode et une troisième électrode ; et une structure de fiche en cuivre qui est disposée entre le second substrat en céramique et le dispositif à semi-conducteur, connectée électriquement au dispositif à semi-conducteur, et formée par impression, compression et frittage d'une pâte contenant du cuivre.
PCT/KR2024/006535 2023-06-29 2024-05-14 Module d'alimentation sans fil refroidi sur les deux surfaces et son procédé de fabrication Ceased WO2025005461A1 (fr)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
KR10-2023-0084315 2023-06-29
KR10-2023-0084314 2023-06-29
KR10-2023-0084313 2023-06-29
KR20230084313 2023-06-29
KR20230084314 2023-06-29
KR20230084315 2023-06-29
KR10-2023-0114523 2023-08-30
KR20230114523 2023-08-30
KR20230137870 2023-10-16
KR10-2023-0137870 2023-10-16
KR1020240061413A KR102935000B1 (ko) 2023-06-29 2024-05-09 와이어리스 양면 냉각형 파워 모듈 및 그 제조방법
KR10-2024-0061413 2024-05-09

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WO2025005461A1 true WO2025005461A1 (fr) 2025-01-02

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018116994A (ja) * 2017-01-17 2018-07-26 三菱マテリアル株式会社 パワーモジュール
KR102293181B1 (ko) * 2020-08-27 2021-08-25 주식회사 코멧네트워크 양면 냉각형 파워 모듈용 세라믹 회로 기판, 그 제조방법 및 이를 구비한 양면 냉각형 파워 모듈
US20210265235A1 (en) * 2020-02-25 2021-08-26 Hyundai Motor Company Double-sided cooling type power module
KR20220015220A (ko) * 2020-07-30 2022-02-08 주식회사 아모센스 파워모듈 및 그 제조방법
KR20220148652A (ko) * 2021-04-29 2022-11-07 현대모비스 주식회사 파워 모듈 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018116994A (ja) * 2017-01-17 2018-07-26 三菱マテリアル株式会社 パワーモジュール
US20210265235A1 (en) * 2020-02-25 2021-08-26 Hyundai Motor Company Double-sided cooling type power module
KR20220015220A (ko) * 2020-07-30 2022-02-08 주식회사 아모센스 파워모듈 및 그 제조방법
KR102293181B1 (ko) * 2020-08-27 2021-08-25 주식회사 코멧네트워크 양면 냉각형 파워 모듈용 세라믹 회로 기판, 그 제조방법 및 이를 구비한 양면 냉각형 파워 모듈
KR20220148652A (ko) * 2021-04-29 2022-11-07 현대모비스 주식회사 파워 모듈 및 그 제조 방법

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