WO2025243714A1 - Élément condensateur - Google Patents

Élément condensateur

Info

Publication number
WO2025243714A1
WO2025243714A1 PCT/JP2025/013989 JP2025013989W WO2025243714A1 WO 2025243714 A1 WO2025243714 A1 WO 2025243714A1 JP 2025013989 W JP2025013989 W JP 2025013989W WO 2025243714 A1 WO2025243714 A1 WO 2025243714A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
capacitor
cathode
capacitor element
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/013989
Other languages
English (en)
Japanese (ja)
Inventor
貴久 日合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of WO2025243714A1 publication Critical patent/WO2025243714A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H01G9/012—Terminals specially adapted for solid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/28—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices with other electric components not covered by this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

Definitions

  • the present invention relates to a capacitor element.
  • Patent Document 1 discloses a capacitor array comprising a plurality of solid electrolytic capacitor elements formed by dividing a single solid electrolytic capacitor sheet, a sheet-like first sealing layer, and a sheet-like second sealing layer.
  • the solid electrolytic capacitor sheet comprises an anode plate made of a valve metal, a porous layer provided on at least one main surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, and has first and second main surfaces opposing each other in the thickness direction.
  • the first main surface side of each of the plurality of solid electrolytic capacitor elements is disposed on the first sealing layer.
  • the second sealing layer is disposed so as to cover the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side.
  • the solid electrolytic capacitor elements are separated by slit-shaped sheet removal portions.
  • Patent Document 1 describes how a capacitor array can be placed in a cavity provided in advance in a substrate, embedded with resin, and then a circuit layer can be formed on top of the resin.
  • the outer insulating layer such as resin
  • the above problem is not limited to capacitor arrays in which multiple capacitor elements are covered with a sealing layer, but is a common problem with capacitor elements in which at least one capacitor section is covered with a sealing layer.
  • the present invention was made to solve the above problems, and aims to provide a capacitor element that has high adhesion strength with the outer insulating layer and can suppress delamination.
  • the capacitor element of the present invention comprises a capacitor section including an anode plate having a porous section on at least one main surface of a core section, a dielectric layer provided on the surface of the porous section, and a cathode layer provided on the surface of the dielectric layer, and a sealing layer provided so as to cover at least one main surface of the capacitor section.
  • the surface roughness R1 of a first portion of a first side surface of the porous section exposed at a side edge of the capacitor section is greater than the surface roughness R2 of a second portion of a second side surface of the porous section exposed in a recess provided in the main surface of the capacitor section.
  • the present invention provides a capacitor element that has high adhesion strength with the outer insulating layer and can suppress delamination.
  • FIG. 1 is a cross-sectional view schematically showing an example of a capacitor element of the present invention.
  • FIG. 2 is a cross-sectional view of the capacitor element shown in FIG. 1 taken along line II-II.
  • FIG. 3 is a cross-sectional view schematically showing an example of a state in which an outer insulating layer is provided around the periphery of the capacitor element shown in FIG. 4A and 4B are schematic diagrams illustrating a method for measuring the length along the surface of a target portion.
  • terms indicating the relationship between elements are not expressions that only convey a strict meaning, but are expressions that mean that a range of substantial equivalence is included, for example, differences of a few percent.
  • “equivalent” or “constant” is not an expression that means only complete equivalence or constant, but is an expression that means that a range of substantial equivalence or constant is included, for example, differences of a few percent.
  • Figure 1 is a cross-sectional view schematically showing an example of a capacitor element of the present invention.
  • Figure 2 is a cross-sectional view taken along line II-II of the capacitor element shown in Figure 1.
  • the capacitor element 1 shown in Figure 1 includes a capacitor section 10 and a sealing layer 20 provided to cover at least one main surface of the capacitor section 10.
  • the capacitor section 10 includes an anode plate 11 having a porous section 11B on at least one main surface of a core section 11A, a dielectric layer 13 provided on the surface of the porous section 11B, and a cathode layer 12 provided on the surface of the dielectric layer 13. This makes up the capacitor section 10 an electrolytic capacitor.
  • the anode plate 11 has porous sections 11B on both main surfaces of the core section 11A, but it may also have porous sections 11B on only one of the main surfaces of the core section 11A.
  • the cathode layer 12 includes, for example, a solid electrolyte layer 12A provided on the surface of the dielectric layer 13.
  • the cathode layer 12 further includes a conductor layer 12B provided on the surface of the solid electrolyte layer 12A.
  • the capacitor section 10 constitutes a solid electrolytic capacitor.
  • the sealing layer 20 may consist of only one layer, or two or more layers. If the sealing layer 20 consists of two or more layers, the materials constituting each layer may be the same or different.
  • the sealing layer 20 is preferably provided on both principal surfaces (top and bottom surfaces in Figure 1) that face each other in the thickness direction of the capacitor section 10 (Z direction in Figure 1).
  • the sealing layer 20 protects the capacitor section 10.
  • the sealing layer 20 is formed to seal the capacitor section 10, for example, by thermocompressing an insulating resin sheet or by applying an insulating resin paste and then thermally curing it.
  • the capacitor section 10 may further include an insulating mask layer 25 on at least one main surface of the anode plate 11.
  • the insulating mask layer 25 is preferably provided in an area of at least one main surface of the anode plate 11 where the cathode layer 12 is not formed.
  • the capacitor element 1 at least a portion of the side surface of the anode plate 11 (the left and right surfaces in Figure 1) is not covered with the sealing layer 20. In other words, at least a portion of the side surface of the anode plate 11 is exposed at the side edge of the capacitor section 10. As shown in Figures 1 and 2, it is preferable that the entire side surface of the anode plate 11 is not covered with the sealing layer 20. In other words, it is preferable that the entire side surface of the anode plate 11 is exposed at the side edge of the capacitor section 10.
  • the through conductor 30 may include a cathode through conductor 30A electrically connected to the cathode layer 12.
  • the cathode through conductor 30A is preferably provided around the entire periphery of the through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.
  • a first resin filling portion 35A filled with a resin material may be provided inside the cathode through conductor 30A.
  • the first resin filling portion 35A is provided in the space surrounded by the cathode through conductor 30A within a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.
  • the provision of the first resin filling portion 35A eliminates the space within the through hole, thereby suppressing delamination of the cathode through conductor 30A.
  • the first resin filling portion 35A may be a conductor or an insulator.
  • the cathode through-conductor 30A is provided inside the cathode through-hole 41 that penetrates the capacitor section 10 in the thickness direction.
  • an insulating material such as a sealing layer 20 be filled between the side wall surface of the anode plate 11 exposed in the cathode through-hole 41 and the cathode penetrating conductor 30A.
  • the sealing layer 20 is inserted between the side wall surface of the anode plate 11 exposed in the cathode through-hole 41 and the cathode penetrating conductor 30A.
  • the through conductor 30 may include an anode through conductor 30B electrically connected to the anode plate 11.
  • the anode penetrating conductor 30B when viewed in the thickness direction, is preferably provided around the entire periphery of a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.
  • the material that constitutes the anode penetrating conductor 30B may be the same as or different from the material that constitutes the cathode penetrating conductor 30A.
  • a second resin filling portion 35B filled with a resin material may be provided inside the anode penetrating conductor 30B.
  • the second resin filling portion 35B is provided in the space surrounded by the anode penetrating conductor 30B within the through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.
  • the second resin filling portion 35B may be a conductor or an insulator.
  • the anode through-conductor 30B is provided inside the anode through-hole 43 that penetrates the capacitor section 10 in the thickness direction.
  • no insulating material such as a sealing layer 20 is filled between the side wall surface of the anode plate 11 exposed in the anode through-hole 43 and the anode through-conductor 30B.
  • the anode penetrating conductor 30B is preferably electrically connected to the side wall surface of the anode plate 11 exposed in the anode through-hole 43.
  • the anode penetrating conductor 30B is preferably electrically connected to the anode plate 11 on the inner wall surface of the anode through-hole 43.
  • the anode through conductor 30B may be electrically connected to the wall surface of the anode plate 11 via the anode connection layer 33.
  • the anode connection layer 33 functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B.
  • the anode connection layer 33 functions as a barrier layer for the anode plate 11
  • dissolution of the anode plate 11 that occurs during chemical treatment to form the wiring layer described below is suppressed, and therefore the penetration of chemicals into the capacitor portion 10 is suppressed, which tends to improve reliability.
  • the anode connection layer 33 preferably includes a metal layer whose main component is nickel. In this case, damage to the metal (e.g., aluminum) that constitutes the anode plate 11 is reduced, which makes it easier to improve the barrier properties of the anode connection layer 33 against the anode plate 11.
  • a metal layer whose main component is nickel. In this case, damage to the metal (e.g., aluminum) that constitutes the anode plate 11 is reduced, which makes it easier to improve the barrier properties of the anode connection layer 33 against the anode plate 11.
  • the anode connection layer 33 including a metal layer primarily composed of nickel can be formed by performing a zincate treatment on the wall surface of an anode plate 11 made of aluminum or an aluminum alloy, followed by electroless nickel plating.
  • the anode connection layer 33 may include, in order from the anode plate 11, a metal layer primarily composed of zinc and a metal layer primarily composed of nickel.
  • the dimensions of the anode connection layer 33 in the thickness direction of the anode plate 11 may be equal to the dimensions of the anode plate 11 in the thickness direction, may be smaller than the dimensions of the anode plate 11 in the thickness direction, or may be larger than the dimensions of the anode plate 11 in the thickness direction.
  • the anode through conductor 30B may be connected directly to the side wall surface of the anode plate 11 without going through the anode connection layer 33.
  • the planar shape of the cathode penetrating conductor 30A (e.g., the cross-sectional shape perpendicular to the thickness direction of the anode plate 11) is not particularly limited and may be, for example, circular.
  • the planar shape of the anode penetrating conductor 30B is not particularly limited and may be, for example, circular.
  • the planar shape of the cathode penetrating conductor 30A may be the same as or different from the planar shape of the anode penetrating conductor 30B.
  • the cathode penetrating conductor 30A exists within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the anode penetrating conductor 30B exists within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the number of cathode through conductors 30A may be the same as the number of anode through conductors 30B, may be less than the number of anode through conductors 30B, or may be greater than the number of anode through conductors 30B.
  • the diameter of the cathode penetrating conductor 30A may be equal to the diameter of the anode penetrating conductor 30B, may be smaller than the diameter of the anode penetrating conductor 30B, or may be larger than the diameter of the anode penetrating conductor 30B.
  • the diameter of a through hole refers to the diameter when the planar shape is circular, and refers to the equivalent circular diameter when the planar shape is other than circular.
  • the diameter of the cathode penetrating conductor 30A may be constant or may vary in the thickness direction.
  • the diameter of the anode penetrating conductor 30B may be constant or may vary in the thickness direction.
  • the capacitor element 1 may further include a through conductor 30 that is not electrically connected to either the anode plate 11 or the cathode layer 12.
  • the capacitor element 1 may be provided with a through groove 45 that penetrates the capacitor section 10 in the thickness direction.
  • the through groove 45 divides the anode plate 11.
  • the through groove 45 is preferably filled with an insulating material such as a sealing layer 20.
  • a sealing layer 20 penetrates into the through groove 45.
  • the direction in which the through grooves 45 extend is not particularly limited.
  • the through grooves 45 may extend in the X direction in Figures 1 and 2, or in the Y direction, or in a direction intersecting the X direction or the Y direction.
  • the number of through grooves 45 is not particularly limited, and may be one, or two or more.
  • the through grooves 45 may be linear, curved, or bent.
  • the width of the through groove 45 may be constant or may vary in the thickness direction.
  • the through groove 45 may be arranged so as to cross the anode plate 11, or may be arranged so as not to cross the anode plate 11.
  • a wiring layer 50 may be provided on at least one main surface of the sealing layer 20.
  • the wiring layer 50 is provided on both main surfaces of the sealing layer 20 (top and bottom surfaces in FIG. 1), but it may also be provided on either main surface of the sealing layer 20 (top or bottom surface in FIG. 1).
  • the wiring layer 50 may include a first wiring layer 50A electrically connected to the cathode through conductor 30A.
  • the first wiring layer 50A is electrically connected to the cathode layer 12 through a via conductor 55 that penetrates the sealing layer 20.
  • the wiring layer 50 may include a second wiring layer 50B electrically connected to the anode penetrating conductor 30B.
  • the second wiring layer 50B is electrically connected to the anode plate 11 via the anode penetrating conductor 30B.
  • Figure 3 is a cross-sectional view showing a schematic example of the capacitor element shown in Figure 1 with an outer insulating layer provided around it.
  • an outer insulating layer 60 is provided around the capacitor element 1, as shown in Figure 3.
  • the outer insulating layer 60 is provided to cover the capacitor section 10 and sealing layer 20 of the capacitor element 1. If a wiring layer 50 is provided on at least one main surface of the sealing layer 20, the outer insulating layer 60 is provided to cover the capacitor section 10, sealing layer 20, and wiring layer 50.
  • the outer insulating layer 60 is made of an insulating material.
  • the outer insulating layer 60 is formed, for example, by placing the capacitor element 1 in a cavity pre-formed in the substrate and embedding it with insulating resin.
  • the outer insulating layer 60 may be formed, for example, by attaching a cured prepreg to the capacitor element 1 via an adhesive layer.
  • the outer insulating layer 60 may consist of only one layer, or two or more layers. If the outer insulating layer 60 consists of two or more layers, the materials constituting each layer may be the same or different.
  • the outer insulating layer 60 may be provided on only one side of the capacitor element 1 in the thickness direction, or on both sides.
  • An external circuit layer 65 may be provided inside the outer insulating layer 60.
  • the capacitor element 1 shown in Figures 1 to 3 is characterized in that the surface roughness R1 of a first portion of the first side surface of the porous portion 11B exposed at the side edge of the capacitor portion 10 is greater than the surface roughness R2 of a second portion of the second side surface of the porous portion 11B exposed in a recess provided in the main surface of the capacitor portion 10.
  • the recess provided on the main surface of the capacitor section 10 may be a portion that does not penetrate the capacitor section 10 in the thickness direction, or may be a portion that penetrates the capacitor section 10 in the thickness direction.
  • the recess is preferably a cathode through-hole 41 or a through-groove 45. Meanwhile, in this specification, the anode through-hole 43 is not included in the recess.
  • the first portion on the first side surface of the porous portion 11B is, for example, the portion indicated by A in Figure 3.
  • the first portion does not have to be the entire first side surface of the porous portion 11B exposed at the side edge of the capacitor portion 10; it can be just a portion. There are no particular restrictions on the position or size of the first portion.
  • the second portion on the second side surface of the porous portion 11B is, for example, the portion indicated by B or C in Figure 3.
  • the second portion does not have to be the entire second side surface of the porous portion 11B exposed in the recess provided in the main surface of the capacitor portion 10; it can be only a portion. There are no particular restrictions on the position or size of the second portion.
  • the surface roughness R1 of the first portion of the first side surface of the porous section 11B exposed at the side edge of the capacitor section 10 is made greater than the surface roughness R2 of the second portion of the second side surface of the porous section 11B exposed in a recess provided in the main surface of the capacitor section 10. This increases the adhesion strength between the anode plate 11 and the outer insulating layer 60, thereby suppressing delamination between the capacitor section 10 and the outer insulating layer 60.
  • the surface roughness R1 of the first portion of the first side surface of the porous portion 11B exposed at the side edge of the capacitor portion 10 may be greater than the surface roughness R2 of the second portion of the porous portion 11B exposed at the cathode through-hole 41 of the capacitor portion 10, and may also be greater than the surface roughness R2 of the second portion of the porous portion 11B exposed at the through-groove 45 of the capacitor portion 10.
  • the surface roughness R1 of the first portion of the first side surface of the porous portion 11B exposed at the side edge of the capacitor portion 10 may be greater than the surface roughness R2 of the second portion of the porous portion 11B exposed at the cathode through-hole 41 of the capacitor portion 10, and may also be greater than the surface roughness R2 of the second portion of the porous portion 11B exposed at the through-groove 45 of the capacitor portion 10.
  • a wiring layer 50 is provided on at least one main surface of the sealing layer 20, it is preferable that the surface roughness R3 of the third portion on the surface of the wiring layer 50 be greater than the surface roughness R2 of the second portion on the second side surface of the porous portion 11B.
  • the third portion on the surface of the wiring layer 50 is, for example, the portion indicated by D in Figure 3.
  • the third portion does not have to be the entire surface of the wiring layer 50; it can be just a portion. There are no particular limitations on the position or size of the third portion.
  • the bonding strength between the metal that makes up the wiring layer 50 and the resin that makes up the outer insulating layer 60 is low, so when force is applied to the outer insulating layer 60, delamination is likely to occur between the wiring layer 50 and the outer insulating layer 60.
  • the surface roughness R3 of the third portion on the surface of the first wiring layer 50A may be greater than the surface roughness R2 of the second portion on the second side surface of the porous portion 11B
  • the surface roughness R3 of the third portion on the surface of the second wiring layer 50B may be greater than the surface roughness R2 of the second portion on the second side surface of the porous portion 11B.
  • the surface roughness R3 of the third portion on the surface of the first wiring layer 50A may be greater than the surface roughness R2 of the second portion on the second side surface of the porous portion 11B, and the surface roughness R3 of the third portion on the surface of the second wiring layer 50B may be greater than the surface roughness R2 of the second portion on the second side surface of the porous portion 11B.
  • a wiring layer 50 is provided on at least one main surface of the sealing layer 20, it is more preferable that the surface roughness R3 of the third portion on the surface of the wiring layer 50 be greater than the surface roughness R1 of the first portion on the first side surface of the porous portion 11B. In this case, the adhesion strength between the wiring layer 50 and the outer insulating layer 60 can be further increased.
  • the surface roughness R3 of the third portion on the surface of the first wiring layer 50A may be greater than the surface roughness R1 of the first portion on the first side surface of the porous portion 11B
  • the surface roughness R3 of the third portion on the surface of the second wiring layer 50B may be greater than the surface roughness R1 of the first portion on the first side surface of the porous portion 11B.
  • the surface roughness R3 of the third portion on the surface of the first wiring layer 50A may be greater than the surface roughness R1 of the first portion on the first side surface of the porous portion 11B, and the surface roughness R3 of the third portion on the surface of the second wiring layer 50B may be greater than the surface roughness R1 of the first portion on the first side surface of the porous portion 11B.
  • the roughened portions of the side surface of the anode plate 11 and the surface of the wiring layer 50 are indicated by dashed lines. As indicated by dashed lines in Figure 3, it is preferable that the entire portion of the side surface of the anode plate 11 and the surface of the wiring layer 50 that comes into contact with the outer insulating layer 60 be roughened, but it is also acceptable for some of the portions that come into contact with the outer insulating layer 60 not to be roughened.
  • the method for roughening the side surface of the anode plate 11 and the surface of the wiring layer 50 is not particularly limited, and examples include a method in which the Brown treatment performed when forming the wiring layer 50 is performed not only on the surface of the wiring layer 50 but also on the side surface of the anode plate 11.
  • the third portion of the surface of the wiring layer 50 is a portion of the surface of the wiring layer 50 that is not connected to the external circuit layer 65.
  • the surface roughness of the portion of the surface of the wiring layer 50 that is connected to the external circuit layer 65 is smaller than the surface roughness of the portion that is not connected to the external circuit layer 65 (for example, the portion indicated by D in Figure 3).
  • the connectivity between the via conductors that make up the external circuit layer 65 and the wiring layer 50 is improved. Note that there are no particular limitations on the position or size of the portions whose surface roughnesses are compared.
  • At least one of the main surfaces of the sealing layer 20 may be roughened.
  • the surface roughness of the main surface of the sealing layer 20 e.g., the portion indicated by F in Figure 3
  • the surface roughness of the side surface of the sealing layer 20 e.g., the portion indicated by G in Figure 3. Note that there are no particular limitations on the position or size of the portions for which the surface roughness is compared.
  • the length along the surface of each part (also called the rough surface length) measured from images taken under the following conditions can be used.
  • a scanning electron microscope (SEM) is used to photograph a cross section of the target area along its thickness direction.
  • the accelerating voltage is 2.5 kV (1 to 3 kV is preferable) and the magnification is 25,000x.
  • the length along the surface of the target area is measured using image processing software for the resulting SEM image. Furthermore, the length of the reference line RL (Reference Line) perpendicular to the thickness direction of the capacitor section is measured in the resulting SEM image.
  • ImageJ for example, can be used as the image processing software.
  • the length L1 along the surface of the first portion is preferably at least 2 times and at most 2.5 times the length L0 of the reference line RL.
  • the length L1 along the surface of the first portion is preferably at least 6 ⁇ m and at most 8.5 ⁇ m.
  • the length L2 along the surface of the second portion be 1.8 times or less the length L0 of the reference line RL.
  • the length L2 along the surface of the second portion may be 1 time or more the length L0 of the reference line RL, and is preferably greater than 1 time. It is preferable that the length L2 along the surface of the second portion be 5 ⁇ m or less. On the other hand, it is preferable that the length L2 along the surface of the second portion be 3.6 ⁇ m or more.
  • the length L3 along the surface of the third portion is preferably 2.7 times or more the length L0 of the reference line RL.
  • the length L3 along the surface of the third portion is preferably 3.5 times or less the length L0 of the reference line RL.
  • the length L3 along the surface of the third portion is preferably 10 ⁇ m or more and 30 ⁇ m or less.
  • the surface of the metal coating layer may be roughened.
  • the surface roughness of the metal coating layer may be equal to the surface roughness R1 of the first portion of the first side of the porous portion 11B, or it may be smaller than the surface roughness R1, or it may be larger than the surface roughness R1.
  • a metal coating layer primarily composed of nickel can be formed by performing a zincate treatment on the side of an anode plate 11 made of aluminum or an aluminum alloy, followed by electroless nickel plating.
  • the metal coating layer may include, in order from the anode plate 11, a layer primarily composed of zinc and a layer primarily composed of nickel.
  • One capacitor section 10 may be disposed inside the sealing layer 20, or multiple capacitor sections 10 may be disposed inside.
  • adjacent capacitor sections 10 are preferably separated by a through groove 45 that penetrates the capacitor section 10 in the thickness direction.
  • the through groove 45 is preferably filled with an insulating material such as the sealing layer 20.
  • the anode plate 11 is preferably made of a valve metal that exhibits so-called valve action.
  • valve metals include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, as well as alloys containing at least one of these metals. Of these, aluminum or aluminum alloys are preferred.
  • the anode plate 11 only needs to have a porous portion 11B on at least one main surface of the core portion 11A.
  • the anode plate 11 may have a porous portion 11B on only one main surface of the core portion 11A, or may have a porous portion 11B on both main surfaces of the core portion 11A.
  • the porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etched layer.
  • the thickness of the anode plate 11 before the etching process is preferably 60 ⁇ m or more and 200 ⁇ m or less.
  • the thickness of the unetched core portion 11A after the etching process is preferably 15 ⁇ m or more and 70 ⁇ m or less.
  • the thickness of the porous portion 11B is designed according to the required withstand voltage and capacitance, but it is preferable that the combined thickness of the porous portions 11B on both sides of the core portion 11A be 10 ⁇ m or more and 180 ⁇ m or less.
  • the pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less.
  • the pore diameter of the porous portion 11B refers to the median diameter D50 measured with a mercury porosimeter.
  • the pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.
  • the dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape.
  • the dielectric layer 13 is preferably made of an oxide film of the valve metal mentioned above.
  • the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also known as chemical conversion treatment).
  • the thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.
  • the cathode layer 12 includes a solid electrolyte layer 12A
  • examples of materials constituting the solid electrolyte layer 12A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred.
  • the conductive polymer may also contain a dopant such as polystyrene sulfonate (PSS).
  • PSS polystyrene sulfonate
  • the solid electrolyte layer 12A preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13, and an outer layer that covers the dielectric layer 13.
  • the thickness of the solid electrolyte layer 12A from the surface of the porous portion 11B is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the solid electrolyte layer 12A is formed, for example, by using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene to form a polymer film such as poly(3,4-ethylenedioxythiophene) on the surface of the dielectric layer 13, or by applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.
  • a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene to form a polymer film such as poly(3,4-ethylenedioxythiophene) on the surface of the dielectric layer 13, or by applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.
  • the solid electrolyte layer 12A can be formed in a predetermined area by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 using methods such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • the conductor layer 12B includes at least one of a conductive resin layer and a metal layer.
  • the conductor layer 12B may consist solely of a conductive resin layer, or may consist solely of a metal layer. It is preferable that the conductor layer 12B cover the entire surface of the solid electrolyte layer 12A.
  • the conductive resin layer examples include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.
  • the metal layer examples include metal plating films and metal foils.
  • the metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main component. Note that "main component” refers to the elemental component with the largest weight percentage.
  • the conductive layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.
  • the copper layer can be formed in a specified area by applying copper paste to the surface of the carbon layer using methods such as sponge transfer, screen printing, spray coating, dispenser coating, or inkjet printing.
  • the thickness of the copper layer is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the cathode through-hole 30A is formed, for example, as follows. First, a cathode through-hole 41 is formed by drilling, laser processing, or other processing, penetrating the capacitor section 10 in the thickness direction. Next, an insulating material such as a sealing layer 20 is filled into the cathode through-hole 41. The portion filled with the insulating material is then processed by drilling, laser processing, or other processing to form a through-hole. By forming a through-hole with a smaller diameter than the cathode through-hole 41 filled with the insulating material, an insulating material is created between the inner wall surface of the subsequently formed through-hole and the inner wall surface of the cathode through-hole 41 in the planar direction.
  • the inner wall surface of the through-hole formed after the cathode through-hole 41 is then metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the cathode through-hole 30A.
  • a metal material containing a low-resistance metal such as copper, gold, or silver
  • metallizing the inner wall surface of the through-hole with a process such as electroless copper plating or electrolytic copper plating facilitates processing.
  • the method of forming the cathode through conductor 30A may involve filling the through hole with a metal material, a composite material of metal and resin, or the like, in addition to metallizing the inner wall surface of the through hole.
  • the anode through-conductor 30B is formed, for example, as follows. First, an anode through-hole 43 is formed by drilling, laser processing, or other processing, penetrating the sealing layer 20 and the capacitor section 10 in the thickness direction. The inner wall surface of the through-hole is then metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, to form the anode through-conductor 30B. When forming the anode through-conductor 30B, metallizing the inner wall surface of the through-hole with a process such as electroless copper plating or electrolytic copper plating makes processing easier. Note that the anode through-conductor 30B can be formed not only by metallizing the inner wall surface of the through-hole, but also by filling the through-hole with a metal material, a composite material of metal and resin, or the like.
  • the sealing layer 20 is made of an insulating material. In this case, it is preferable that the sealing layer 20 contains an insulating resin.
  • Examples of insulating resins contained in the sealing layer 20 include epoxy resins, phenolic resins, etc.
  • the sealing layer 20 further contains a filler.
  • the insulating mask layer 25 can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of the porous portion 11B using methods such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • a mask material such as a composition containing an insulating resin
  • the first wiring layer 50A may be made of a composite material of a resin and at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.
  • the second wiring layer 50B may be made of a metal material containing a low-resistance metal such as silver, gold, or copper.
  • the second wiring layer 50B is formed, for example, by plating the surface of the anode through conductor 30B.
  • the second wiring layer 50B may be made of a composite material of a resin and at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.
  • the constituent materials of the first wiring layer 50A and the second wiring layer 50B are preferably the same at least in terms of type, but may be different.
  • each capacitor unit 10 When multiple capacitor units 10 are arranged inside the sealing layer 20, each capacitor unit 10 may be provided with a first wiring layer 50A electrically connected to the cathode layer 12 and a second wiring layer 50B electrically connected to the anode plate 11, or at least one of the first wiring layer 50A and the second wiring layer 50B may be provided in common among multiple capacitor units 10.
  • Examples of materials that can be used to form the via conductors 55 include metal materials containing low-resistivity metals such as silver, gold, and copper.
  • the via conductors 55 are formed, for example, by plating the inner wall surfaces of through holes that penetrate the sealing layer 20 in the thickness direction with the metal material described above, or by filling them with a conductive paste and then performing a heat treatment.
  • the capacitor element of the present invention is not limited to the above embodiment, and various applications and modifications can be made within the scope of the present invention regarding the configuration of the capacitor element, the manufacturing conditions of the capacitor element, etc.
  • the capacitor element of the present invention can be suitably used as a constituent material for a composite electronic component.
  • a composite electronic component comprises, for example, the capacitor element of the present invention, external electrodes provided on the outside of the sealing layer of the capacitor element and electrically connected to the anode plate and cathode layer of the capacitor element, respectively, and an electronic component connected to the external electrodes.
  • the electronic component connected to the external electrode may be a passive element or an active element. Both a passive element and an active element may be connected to the external electrode, or either a passive element or an active element may be connected to the external electrode. Also, a composite of a passive element and an active element may be connected to the external electrode.
  • the capacitor element of the present invention has an overall sheet-like shape. Therefore, in a composite electronic component, the capacitor element can be treated like a mounting substrate, and electronic components can be mounted on the capacitor element. Furthermore, by making the electronic components mounted on the capacitor element sheet-like, it is also possible to connect the capacitor element and electronic components in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, active and passive elements can be configured like a single module.
  • a switching regulator can be formed by electrically connecting the capacitor element of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.
  • the capacitor element of the present invention may be placed in a cavity already provided in a substrate, embedded in resin, and then a circuit layer may be formed on top of the resin.
  • Another electronic component passive element or active element
  • a capacitor section including an anode plate having a porous portion on at least one main surface of a core portion, a dielectric layer provided on the surface of the porous portion, and a cathode layer provided on the surface of the dielectric layer; a sealing layer provided so as to cover at least one main surface of the capacitor portion, A capacitor element in which the surface roughness R1 of a first portion of a first side surface of the porous portion exposed at a side edge of the capacitor portion is greater than the surface roughness R2 of a second portion of a second side surface of the porous portion exposed at a recess provided on the main surface of the capacitor portion.
  • ⁇ 3> The capacitor element according to ⁇ 2>, wherein the length L1 along the surface of the first portion is 6 ⁇ m or more and 8.5 ⁇ m or less.
  • a cathode through conductor provided to penetrate the capacitor portion and the sealing layer in a thickness direction and electrically connected to the cathode layer, the recess is a cathode through-hole that penetrates the capacitor section in the thickness direction, the cathode through conductor is provided inside the cathode through hole, ⁇ 1> ⁇ 9>
  • the capacitor element according to any one of ⁇ 1> to ⁇ 9>, wherein an insulating material is filled between the side wall surface of the anode plate exposed in the cathode through hole and the cathode through conductor.
  • ⁇ 12> an anode through conductor provided to penetrate the capacitor portion and the sealing layer in a thickness direction and electrically connected to the anode plate;
  • the capacitor element according to any one of ⁇ 1> to ⁇ 11>, wherein the anode through conductor is electrically connected to a side wall surface of the anode plate.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne un élément condensateur 1 comprenant : une partie condensateur 10 qui comprend une plaque d'électrode positive 11 présentant une partie poreuse 11B sur au moins une surface principale d'une partie noyau 11A, une couche diélectrique 13 qui est disposée sur la surface de la partie poreuse 11B, et une couche d'électrode négative 12 qui est disposée sur la surface de la couche diélectrique 13 ; et une couche d'étanchéité 20 qui est disposée de façon à recouvrir au moins une surface principale de la partie condensateur 10. La rugosité de surface R1 d'une première partie sur une première surface latérale de la partie poreuse 11B exposée au niveau d'une extrémité de bord latéral de la partie condensateur 10 est supérieure à la rugosité de surface R2 d'une seconde partie sur une seconde surface latérale de la partie poreuse 11B exposée dans un évidement qui est disposé sur une surface principale de la partie condensateur 10.
PCT/JP2025/013989 2024-05-24 2025-04-08 Élément condensateur Pending WO2025243714A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024084821 2024-05-24
JP2024-084821 2024-05-24

Publications (1)

Publication Number Publication Date
WO2025243714A1 true WO2025243714A1 (fr) 2025-11-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/013989 Pending WO2025243714A1 (fr) 2024-05-24 2025-04-08 Élément condensateur

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Country Link
WO (1) WO2025243714A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077483A (ja) * 1999-07-06 2001-03-23 Ngk Spark Plug Co Ltd 配線基板およびその製造方法
JP2001332437A (ja) * 2000-05-19 2001-11-30 Ibiden Co Ltd コンデンサおよび多層プリント配線板
JP6338232B1 (ja) * 2017-09-22 2018-06-06 メック株式会社 銅表面の粗化方法および配線基板の製造方法
CN114286494A (zh) * 2020-09-27 2022-04-05 华为技术有限公司 一种pcb结构及其制作方法，以及一种电子设备
WO2024070531A1 (fr) * 2022-09-30 2024-04-04 株式会社村田製作所 Élément de condensateur

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077483A (ja) * 1999-07-06 2001-03-23 Ngk Spark Plug Co Ltd 配線基板およびその製造方法
JP2001332437A (ja) * 2000-05-19 2001-11-30 Ibiden Co Ltd コンデンサおよび多層プリント配線板
JP6338232B1 (ja) * 2017-09-22 2018-06-06 メック株式会社 銅表面の粗化方法および配線基板の製造方法
CN114286494A (zh) * 2020-09-27 2022-04-05 华为技术有限公司 一种pcb结构及其制作方法，以及一种电子设备
WO2024070531A1 (fr) * 2022-09-30 2024-04-04 株式会社村田製作所 Élément de condensateur

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