ZA783044B - A semiconductive field sensor device - Google Patents

A semiconductive field sensor device

Info

Publication number
ZA783044B
ZA783044B ZA783044A ZA783044A ZA783044B ZA 783044 B ZA783044 B ZA 783044B ZA 783044 A ZA783044 A ZA 783044A ZA 783044 A ZA783044 A ZA 783044A ZA 783044 B ZA783044 B ZA 783044B
Authority
ZA
South Africa
Prior art keywords
sensor device
field sensor
semiconductive
semiconductive field
sensor
Prior art date
Application number
ZA783044A
Other languages
English (en)
Inventor
A Vinal
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of ZA783044B publication Critical patent/ZA783044B/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
ZA783044A 1977-07-01 1978-05-26 A semiconductive field sensor device ZA783044B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/812,298 US4129880A (en) 1977-07-01 1977-07-01 Channel depletion boundary modulation magnetic field sensor

Publications (1)

Publication Number Publication Date
ZA783044B true ZA783044B (en) 1980-01-30

Family

ID=25209147

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA783044A ZA783044B (en) 1977-07-01 1978-05-26 A semiconductive field sensor device

Country Status (11)

Country Link
US (1) US4129880A (it)
EP (1) EP0000318B1 (it)
JP (1) JPS597232B2 (it)
AU (1) AU517615B2 (it)
CA (1) CA1100234A (it)
DE (1) DE2860402D1 (it)
ES (1) ES471288A1 (it)
IE (1) IE46921B1 (it)
IN (1) IN149637B (it)
IT (1) IT1108954B (it)
ZA (1) ZA783044B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
DE2852621C4 (de) * 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
DE3047872A1 (de) * 1980-04-18 1982-07-01 Rockwell International Corp Magnetotransistor-Detektor
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
JPS5738375A (en) * 1980-08-12 1982-03-03 Toshiba Ceramics Co Continuous casting nozzle
FR2498815A1 (fr) * 1981-01-27 1982-07-30 Thomson Csf Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif
US4520413A (en) * 1982-04-13 1985-05-28 Minnesota Mining And Manufacturing Company Integrated magnetostrictive-piezoelectric-metal oxide semiconductor magnetic playback head
US4499515A (en) * 1982-07-14 1985-02-12 Minnesota Mining And Manufacturing Company Integrated magnetostrictive-piezoresistive magnetic recording playback head
US4516144A (en) * 1982-09-23 1985-05-07 Eaton Corporation Columnated and trimmed magnetically sensitive semiconductor
US4472727A (en) * 1983-08-12 1984-09-18 At&T Bell Laboratories Carrier freezeout field-effect device
EP0158941B2 (en) * 1984-04-06 1997-12-17 Fuji Photo Film Co., Ltd. Aluminium alloy material plate for printing
CH668147A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JPS61277825A (ja) * 1985-06-01 1986-12-08 Yanmar Diesel Engine Co Ltd 横形内燃機関
US5667289A (en) * 1989-05-18 1997-09-16 Seiko Epson Corporation Background lighting apparatus for liquid crystal display
US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US5136534A (en) * 1989-06-30 1992-08-04 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
US5208477A (en) * 1990-12-31 1993-05-04 The United States Of America As Represented By The Secretary Of The Navy Resistive gate magnetic field sensor
US5237529A (en) * 1991-02-01 1993-08-17 Richard Spitzer Microstructure array and activation system therefor
EP0798507B1 (en) * 1992-07-13 2004-03-03 Seiko Epson Corporation Surface-type illumination device and liquid crystal display
DK94995A (da) * 1995-08-24 1997-02-25 Microtronic As Magnetfeltsensor
JP3931686B2 (ja) * 2002-02-28 2007-06-20 株式会社デンソー 半導体磁気センサ
US7440227B2 (en) * 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
WO2016090047A1 (en) 2014-12-02 2016-06-09 Invuity, Inc. Methods and apparatus for coupling an optical input to an illumination device
FR3087959B1 (fr) * 2018-10-25 2020-11-20 Nexans Jonction de cable avec detecteur de charge d'espace integre

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1304899A (it) * 1969-05-19 1973-01-31
DE2338388C2 (de) * 1973-07-28 1982-04-15 Ibm Deutschland Gmbh, 7000 Stuttgart Feldeffekt-Halbleiteranordnung
US3994010A (en) * 1975-03-27 1976-11-23 Honeywell Inc. Hall effect elements
US3997909A (en) * 1975-05-14 1976-12-14 International Business Machines Corporation High carrier velocity magnetic sensor
US4048648A (en) * 1976-06-30 1977-09-13 International Business Machines Corporation High carrier velocity fet magnetic sensor

Also Published As

Publication number Publication date
ES471288A1 (es) 1979-01-16
IE46921B1 (en) 1983-11-02
IT1108954B (it) 1985-12-16
AU517615B2 (en) 1981-08-13
IT7824894A0 (it) 1978-06-23
IE781026L (en) 1979-01-01
AU3630278A (en) 1979-11-22
JPS5440087A (en) 1979-03-28
DE2860402D1 (en) 1981-02-26
EP0000318A1 (fr) 1979-01-10
US4129880A (en) 1978-12-12
JPS597232B2 (ja) 1984-02-17
IN149637B (it) 1982-02-27
CA1100234A (en) 1981-04-28
EP0000318B1 (fr) 1981-01-07

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