ZA908488B - Process for producing ohmic electrode for p-type cubic system boron nitride - Google Patents

Process for producing ohmic electrode for p-type cubic system boron nitride

Info

Publication number
ZA908488B
ZA908488B ZA908488A ZA908488A ZA908488B ZA 908488 B ZA908488 B ZA 908488B ZA 908488 A ZA908488 A ZA 908488A ZA 908488 A ZA908488 A ZA 908488A ZA 908488 B ZA908488 B ZA 908488B
Authority
ZA
South Africa
Prior art keywords
boron nitride
ohmic electrode
cubic system
type cubic
system boron
Prior art date
Application number
ZA908488A
Other languages
English (en)
Inventor
Katsuhito Yoshida
Yoshida Katsuhito
Kazuwo Tsuji
Tsuji Kazuwo
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of ZA908488B publication Critical patent/ZA908488B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor
ZA908488A 1989-10-23 1990-10-23 Process for producing ohmic electrode for p-type cubic system boron nitride ZA908488B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1276346A JPH03137081A (ja) 1989-10-23 1989-10-23 ｐ型ｃＢＮのオーム性電極形成方法

Publications (1)

Publication Number Publication Date
ZA908488B true ZA908488B (en) 1991-10-30

Family

ID=17568156

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA908488A ZA908488B (en) 1989-10-23 1990-10-23 Process for producing ohmic electrode for p-type cubic system boron nitride

Country Status (6)

Country Link
US (1) US5057454A (fr)
EP (1) EP0424857B1 (fr)
JP (1) JPH03137081A (fr)
DE (1) DE69022531T2 (fr)
IE (1) IE903774A1 (fr)
ZA (1) ZA908488B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
EP0458353B1 (fr) * 1990-05-24 1996-09-18 Sumitomo Electric Industries, Ltd. Electrodes de contact ohmiques pour nitrure de bore cubique semi-conducteur de type n
US5266522A (en) * 1991-04-10 1993-11-30 International Business Machines Corporation Structure and method for corrosion and stress-resistant interconnecting metallurgy
JPH0582519A (ja) * 1991-09-19 1993-04-02 Nec Corp 半導体装置の配線及びその製造方法
JPH0697690B2 (ja) * 1992-09-28 1994-11-30 科学技術庁無機材質研究所長 オーム性電極を備えたｃＢＮ半導体装置とその製造方法
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
JP2942452B2 (ja) * 1993-10-21 1999-08-30 財団法人地球環境産業技術研究機構 ｎ型半導体立方晶窒化ホウ素のオ−ミック電極およびその形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769694A (en) * 1970-12-28 1973-11-06 Gen Electric Ohmic contact for group iii-v p-type semiconductors
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
JPS5629381A (en) * 1979-08-17 1981-03-24 Toshiba Corp Compound-semiconductor light emitting element containing garium and manufacture thereof
US4366186A (en) * 1979-09-27 1982-12-28 Bell Telephone Laboratories, Incorporated Ohmic contact to p-type InP
US4875967A (en) * 1987-05-01 1989-10-24 National Institute For Research In Inorganic Materials Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element

Also Published As

Publication number Publication date
US5057454A (en) 1991-10-15
DE69022531T2 (de) 1996-02-01
JPH03137081A (ja) 1991-06-11
EP0424857B1 (fr) 1995-09-20
EP0424857A2 (fr) 1991-05-02
EP0424857A3 (en) 1993-06-30
IE903774A1 (en) 1991-04-24
DE69022531D1 (de) 1995-10-26

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