AT16977U3 - Verfahren zum Behandeln von Substraten mit Chemikalien - Google Patents

Verfahren zum Behandeln von Substraten mit Chemikalien Download PDF

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Publication number
AT16977U3
AT16977U3 ATGM21/2020U AT212020U AT16977U3 AT 16977 U3 AT16977 U3 AT 16977U3 AT 212020 U AT212020 U AT 212020U AT 16977 U3 AT16977 U3 AT 16977U3
Authority
AT
Austria
Prior art keywords
treatment
chemicals
substrate
treating substrates
treatment medium
Prior art date
Application number
ATGM21/2020U
Other languages
English (en)
Other versions
AT16977U2 (de
Inventor
Okorn-Schmidt Dipl Ing Dr Harald
Linder Manuel
Hofer-Moser Ing Bsc Jörg
Tobias Engesser Philipp
Smoliner Dipl Ing Klaus (Fh)
Original Assignee
4Tex Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 4Tex Gmbh filed Critical 4Tex Gmbh
Priority to ATGM21/2020U priority Critical patent/AT16977U3/de
Publication of AT16977U2 publication Critical patent/AT16977U2/de
Priority to EP21707631.4A priority patent/EP4122006A1/de
Priority to JP2022549907A priority patent/JP7636425B2/ja
Priority to PCT/EP2021/053867 priority patent/WO2021165308A1/de
Publication of AT16977U3 publication Critical patent/AT16977U3/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04K—SECRET COMMUNICATION; JAMMING OF COMMUNICATION
    • H04K1/00—Secret communication
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L63/00—Network architectures or network communication protocols for network security
    • H04L63/18—Network architectures or network communication protocols for network security using different networks or channels, e.g. using out of band channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04K—SECRET COMMUNICATION; JAMMING OF COMMUNICATION
    • H04K1/00—Secret communication
    • H04K1/003—Secret communication by varying carrier frequency at or within predetermined or random intervals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04K—SECRET COMMUNICATION; JAMMING OF COMMUNICATION
    • H04K1/00—Secret communication
    • H04K1/006—Secret communication by varying or inverting the phase, at periodic or random intervals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04K—SECRET COMMUNICATION; JAMMING OF COMMUNICATION
    • H04K1/00—Secret communication
    • H04K1/08—Secret communication by varying the polarisation of transmitted waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L1/00—Arrangements for detecting or preventing errors in the information received
    • H04L1/0001—Systems modifying transmission characteristics according to link quality, e.g. power backoff
    • H04L1/0023—Systems modifying transmission characteristics according to link quality, e.g. power backoff characterised by the signalling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Beim Behandeln von Substraten mit einem Behandlungsmedium, das wenigstens eine für das Behandeln wirksame Chemikalie enthält, beispielsweise beim Entfernen einer Maskierungsschicht (101) von einem Halbleitersubstrat (110) durch Ätzen, wird das Behandlungsmedium erst unmittelbar vor dem Aufbringen auf das Substrat (110) auf eine für das Behandeln wirksame Temperatur erwärmt, wobei das Behandlungsmedium die für das Behandeln optimale Temperatur hat, wenn es auf das Substrat trifft. So werden eine kurze Behandlungsdauer, geringe, thermisch bedingte Zersetzungsverluste an Chemikalie und ein Einsparen an Behandlungsmedium erreicht.
ATGM21/2020U 2020-02-20 2020-02-20 Verfahren zum Behandeln von Substraten mit Chemikalien AT16977U3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ATGM21/2020U AT16977U3 (de) 2020-02-20 2020-02-20 Verfahren zum Behandeln von Substraten mit Chemikalien
EP21707631.4A EP4122006A1 (de) 2020-02-20 2021-02-17 Verfahren zum behandeln von substraten mit chemikalien
JP2022549907A JP7636425B2 (ja) 2020-02-20 2021-02-17 化学物質を用いた基板処理方法
PCT/EP2021/053867 WO2021165308A1 (de) 2020-02-20 2021-02-17 Verfahren zum behandeln von substraten mit chemikalien

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ATGM21/2020U AT16977U3 (de) 2020-02-20 2020-02-20 Verfahren zum Behandeln von Substraten mit Chemikalien

Publications (2)

Publication Number Publication Date
AT16977U2 AT16977U2 (de) 2021-01-15
AT16977U3 true AT16977U3 (de) 2021-03-15

Family

ID=74125756

Family Applications (1)

Application Number Title Priority Date Filing Date
ATGM21/2020U AT16977U3 (de) 2020-02-20 2020-02-20 Verfahren zum Behandeln von Substraten mit Chemikalien

Country Status (4)

Country Link
EP (1) EP4122006A1 (de)
JP (1) JP7636425B2 (de)
AT (1) AT16977U3 (de)
WO (1) WO2021165308A1 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6558879B1 (en) * 2000-09-25 2003-05-06 Ashland Inc. Photoresist stripper/cleaner compositions containing aromatic acid inhibitors
US20120276749A1 (en) * 2009-12-23 2012-11-01 Gebr Schmid GmbH Method and Device for Treating Silicon Substrates
US20150371872A1 (en) * 2014-06-24 2015-12-24 Intermolecular Inc. Solution Based Etching of Titanium Carbide and Titanium Nitride Structures
WO2019145485A1 (de) * 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und vorrichtung zur behandlung von geätzten oberflächen eines halbleitersubstrats unter verwendung von ozonhaltigem medium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
US9330937B2 (en) * 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
AT515147B1 (de) 2013-12-09 2016-10-15 4Tex Gmbh Verfahren und Vorrichtung zum Behandeln von Gegenständen mit einer Flüssigkeit
US10283384B2 (en) * 2015-04-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer and wafer etching apparatus
US10190913B2 (en) * 2015-08-27 2019-01-29 Zeus Co., Ltd. Substrate processing apparatus and method
US10748781B2 (en) 2016-09-23 2020-08-18 The Board Of Trustees Of The University Of Illinois Catalyst-assisted chemical etching with a vapor-phase etchant
JP7142461B2 (ja) 2018-05-14 2022-09-27 東京エレクトロン株式会社 基板処理方法、基板処理装置および基板処理システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6558879B1 (en) * 2000-09-25 2003-05-06 Ashland Inc. Photoresist stripper/cleaner compositions containing aromatic acid inhibitors
US20120276749A1 (en) * 2009-12-23 2012-11-01 Gebr Schmid GmbH Method and Device for Treating Silicon Substrates
US20150371872A1 (en) * 2014-06-24 2015-12-24 Intermolecular Inc. Solution Based Etching of Titanium Carbide and Titanium Nitride Structures
WO2019145485A1 (de) * 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und vorrichtung zur behandlung von geätzten oberflächen eines halbleitersubstrats unter verwendung von ozonhaltigem medium

Also Published As

Publication number Publication date
AT16977U2 (de) 2021-01-15
EP4122006A1 (de) 2023-01-25
JP7636425B2 (ja) 2025-02-26
JP2023519493A (ja) 2023-05-11
WO2021165308A1 (de) 2021-08-26

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