AT515730A3 - Verfahren zum Bearbeiten von Wafern - Google Patents

Verfahren zum Bearbeiten von Wafern

Info

Publication number
AT515730A3
AT515730A3 ATA50400/2015A AT504002015A AT515730A3 AT 515730 A3 AT515730 A3 AT 515730A3 AT 504002015 A AT504002015 A AT 504002015A AT 515730 A3 AT515730 A3 AT 515730A3
Authority
AT
Austria
Prior art keywords
wafer
tape
annular
annular projection
boundary
Prior art date
Application number
ATA50400/2015A
Other languages
English (en)
Other versions
AT515730B1 (de
AT515730A2 (de
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of AT515730A2 publication Critical patent/AT515730A2/de
Publication of AT515730A3 publication Critical patent/AT515730A3/de
Application granted granted Critical
Publication of AT515730B1 publication Critical patent/AT515730B1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/30—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Waferbearbeitungsverfahren mit einem Bandbefestigungsschritt bestehend aus dem Befestigen eines Bands (T1) an der Vorderseite (11a) eines Wafers (11) und dem Befestigen des Wafers (11) durch dieses Band (T1) an einem ringförmigen Rahmen (F1), einem Trennschritt bestehend aus dem Halten des Wafers (11) durch das Band (T1)auf einem Spanntisch (16) und dem Anwenden eines Laserstrahls auf die Grenze zwischen einem ringförmigen Vorsprung (20), der entlang des äußeren Umfangs des Wafers (11) gebildet ist, und einem Bauelementbereich (17), der vom ringförmigen Vorsprung (20) umgeben ist, um den Wafer (11) und das Band (T1) entlang dieser Grenze zu schneiden, wodurch der Bauelementbereich (17) vom ringförmigen Vorsprung (20) getrennt wird, und einem Entfernungsschritt bestehend aus dem Entfernen des ringförmigen Vorsprungs (20) zusammen mit dem ringförmigen Rahmen (F1) vom Bauelementbereich (17) des Wafers (11) in dem Zustand, in dem der ringförmige Vorsprung (20) durch das Band (T1) an dem ringförmigen Rahmen (F1) befestigt ist.
ATA50400/2015A 2014-05-13 2015-05-13 Verfahren zum Bearbeiten von Wafern AT515730B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014099269A JP6385131B2 (ja) 2014-05-13 2014-05-13 ウェーハの加工方法

Publications (3)

Publication Number Publication Date
AT515730A2 AT515730A2 (de) 2015-11-15
AT515730A3 true AT515730A3 (de) 2017-10-15
AT515730B1 AT515730B1 (de) 2024-07-15

Family

ID=54361910

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA50400/2015A AT515730B1 (de) 2014-05-13 2015-05-13 Verfahren zum Bearbeiten von Wafern

Country Status (8)

Country Link
US (1) US9472442B2 (de)
JP (1) JP6385131B2 (de)
KR (2) KR20150130228A (de)
CN (1) CN105097483B (de)
AT (1) AT515730B1 (de)
DE (2) DE202015009750U1 (de)
MY (1) MY170046A (de)
TW (1) TWI641036B (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015006857B4 (de) * 2015-08-31 2023-10-05 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzabdeckung zur Verwendung in diesem Verfahren
US9852997B2 (en) * 2016-03-25 2017-12-26 Applied Materials, Inc. Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
JP6672053B2 (ja) * 2016-04-18 2020-03-25 株式会社ディスコ ウェーハの加工方法
JP6692577B2 (ja) * 2016-06-24 2020-05-13 株式会社ディスコ ウェーハの加工方法
JP6908464B2 (ja) * 2016-09-15 2021-07-28 株式会社荏原製作所 基板加工方法および基板加工装置
JP6707291B2 (ja) * 2016-10-14 2020-06-10 株式会社ディスコ ウェーハの加工方法
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP6739873B2 (ja) * 2016-11-08 2020-08-12 株式会社ディスコ ウェーハの加工方法
US10829866B2 (en) 2017-04-03 2020-11-10 Infineon Technologies Americas Corp. Wafer carrier and method
JP6866217B2 (ja) * 2017-04-21 2021-04-28 株式会社ディスコ 切削装置
JP6909621B2 (ja) * 2017-04-24 2021-07-28 株式会社ディスコ ウォータージェット加工装置
JP6906843B2 (ja) * 2017-04-28 2021-07-21 株式会社ディスコ ウェーハの加工方法
JP7034809B2 (ja) * 2018-04-09 2022-03-14 株式会社ディスコ 保護シート配設方法
CN109864752B (zh) 2018-07-17 2021-06-01 山东麦德盈华科技有限公司 一种整体全角度符合脑部pet探测器及整体设备
CN110312590A (zh) * 2019-02-12 2019-10-08 大族激光科技产业集团股份有限公司 一种硬脆性产品的加工方法、装置以及系统
JP7407561B2 (ja) * 2019-10-30 2024-01-04 株式会社ディスコ ウェーハの加工方法
US12136564B2 (en) * 2020-03-30 2024-11-05 Canon Kabushiki Kaisha Superstrate and method of making it
DE102020206233B3 (de) 2020-05-18 2021-08-12 Disco Corporation Verfahren zum herstellen eines substrats und system zum herstellen eines substrats
JP7442938B2 (ja) * 2020-06-05 2024-03-05 株式会社ディスコ ウエーハの加工方法、及び加工装置
CN111604604A (zh) * 2020-06-28 2020-09-01 安徽富信半导体科技有限公司 一种半导体元件加工用成型设备及其使用方法
JP7464472B2 (ja) * 2020-07-17 2024-04-09 株式会社ディスコ 加工装置
JP7517936B2 (ja) * 2020-10-01 2024-07-17 株式会社ディスコ 加工装置
CN112475627A (zh) * 2020-11-17 2021-03-12 华虹半导体(无锡)有限公司 Taiko减薄晶圆的去环方法
DE102020133071A1 (de) 2020-12-11 2022-06-15 Phoenix Silicon International Corp. Taiko-wafer-ringschneideverfahren
JP7582856B2 (ja) * 2020-12-11 2024-11-13 株式会社ディスコ 加工装置
CN112974324B (zh) * 2021-03-01 2022-04-12 长江存储科技有限责任公司 晶圆清洗刷及晶圆清洗装置
JP7619152B2 (ja) * 2021-04-30 2025-01-22 村田機械株式会社 工具刃先成形装置及び工具刃先成形方法
JP7730666B2 (ja) * 2021-06-01 2025-08-28 株式会社ディスコ 加工方法および加工装置
JP7762518B2 (ja) * 2021-08-10 2025-10-30 株式会社ディスコ 加工装置
JP2023038724A (ja) * 2021-09-07 2023-03-17 株式会社ディスコ ウエーハの移し替え方法
DE102021209979A1 (de) 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
CN114121770A (zh) * 2021-11-15 2022-03-01 华虹半导体(无锡)有限公司 一种taiko取环固定装置及固定方法
CN114473216A (zh) * 2022-01-28 2022-05-13 Oppo广东移动通信有限公司 激光磨削加工装置及磨削加工的方法、陶瓷件和壳体组件
JP7749474B2 (ja) * 2022-01-28 2025-10-06 株式会社ディスコ チャックテーブルの製造方法
CN114582713B (zh) * 2022-03-11 2023-01-24 江苏京创先进电子科技有限公司 晶圆加工方法及晶圆加工装置
CN114843207B (zh) * 2022-04-14 2023-02-28 江苏京创先进电子科技有限公司 去环方法、系统及设备
KR102897487B1 (ko) * 2023-11-21 2025-12-15 로체 시스템즈(주) 웨이퍼 다운사이징 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004044946A1 (de) * 2003-09-25 2005-04-21 Disco Corp Verfahren zum Trennen eines Halbleiterwafers
DE102006032458A1 (de) * 2005-07-14 2007-01-25 Disco Corp. Waferbearbeitungsverfahren
DE102007059697A1 (de) * 2006-12-15 2008-06-19 Disco Corp. Verfahren zum Trennen eines Wafers
DE102009004168A1 (de) * 2008-01-11 2009-07-16 Disco Corp. Schichtbauelement-Herstellungsverfahren
US20100129546A1 (en) * 2008-11-25 2010-05-27 Disco Corporation Protective film forming method and apparatus
DE102011078726A1 (de) * 2010-07-14 2012-01-19 Disco Corporation Bearbeitungsverfahren für einen Wafer
DE102013205644A1 (de) * 2012-04-02 2013-10-02 Disco Corporation Herstellverfahren für Chips mit Haftfolien

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148126B2 (en) * 2002-06-25 2006-12-12 Sanken Electric Co., Ltd. Semiconductor device manufacturing method and ring-shaped reinforcing member
JP4342992B2 (ja) * 2004-03-17 2009-10-14 株式会社ディスコ レーザー加工装置のチャックテーブル
CN100501932C (zh) * 2005-04-27 2009-06-17 株式会社迪斯科 半导体晶片及其加工方法
JP5390740B2 (ja) 2005-04-27 2014-01-15 株式会社ディスコ ウェーハの加工方法
JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP2008283025A (ja) * 2007-05-11 2008-11-20 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5111938B2 (ja) * 2007-05-25 2013-01-09 日東電工株式会社 半導体ウエハの保持方法
JP2010062375A (ja) * 2008-09-04 2010-03-18 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5443102B2 (ja) * 2009-09-01 2014-03-19 株式会社ディスコ レーザー加工装置
JP2011243906A (ja) * 2010-05-21 2011-12-01 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5654810B2 (ja) * 2010-09-10 2015-01-14 株式会社ディスコ ウェーハの加工方法
JP5755043B2 (ja) * 2011-06-20 2015-07-29 株式会社ディスコ 半導体ウエーハの加工方法
JP6053381B2 (ja) * 2012-08-06 2016-12-27 株式会社ディスコ ウェーハの分割方法
JP2014053510A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 端面加工方法及び端面加工装置
US8975162B2 (en) * 2012-12-20 2015-03-10 Applied Materials, Inc. Wafer dicing from wafer backside
US9206037B2 (en) * 2014-03-04 2015-12-08 Disco Corporation MEMS device chip manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004044946A1 (de) * 2003-09-25 2005-04-21 Disco Corp Verfahren zum Trennen eines Halbleiterwafers
DE102006032458A1 (de) * 2005-07-14 2007-01-25 Disco Corp. Waferbearbeitungsverfahren
DE102007059697A1 (de) * 2006-12-15 2008-06-19 Disco Corp. Verfahren zum Trennen eines Wafers
DE102009004168A1 (de) * 2008-01-11 2009-07-16 Disco Corp. Schichtbauelement-Herstellungsverfahren
US20100129546A1 (en) * 2008-11-25 2010-05-27 Disco Corporation Protective film forming method and apparatus
DE102011078726A1 (de) * 2010-07-14 2012-01-19 Disco Corporation Bearbeitungsverfahren für einen Wafer
DE102013205644A1 (de) * 2012-04-02 2013-10-02 Disco Corporation Herstellverfahren für Chips mit Haftfolien

Also Published As

Publication number Publication date
JP2015213955A (ja) 2015-12-03
CN105097483B (zh) 2019-11-29
US9472442B2 (en) 2016-10-18
TW201543562A (zh) 2015-11-16
DE102015208893B4 (de) 2024-04-25
KR102601856B1 (ko) 2023-11-13
US20150332928A1 (en) 2015-11-19
KR20150130228A (ko) 2015-11-23
KR20220043103A (ko) 2022-04-05
CN105097483A (zh) 2015-11-25
DE202015009750U1 (de) 2019-11-25
MY170046A (en) 2019-06-26
DE102015208893A1 (de) 2015-11-19
AT515730B1 (de) 2024-07-15
AT515730A2 (de) 2015-11-15
JP6385131B2 (ja) 2018-09-05
TWI641036B (zh) 2018-11-11

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