AT518580A3 - Waferbearbeitungsverfahren - Google Patents

Waferbearbeitungsverfahren Download PDF

Info

Publication number
AT518580A3
AT518580A3 ATA50315/2017A AT503152017A AT518580A3 AT 518580 A3 AT518580 A3 AT 518580A3 AT 503152017 A AT503152017 A AT 503152017A AT 518580 A3 AT518580 A3 AT 518580A3
Authority
AT
Austria
Prior art keywords
region
wafer
annular
adhesive tape
reinforcing
Prior art date
Application number
ATA50315/2017A
Other languages
English (en)
Other versions
AT518580A2 (de
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of AT518580A2 publication Critical patent/AT518580A2/de
Publication of AT518580A3 publication Critical patent/AT518580A3/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • B23K26/0846—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt for moving elongated workpieces longitudinally, e.g. wire or strip material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)

Abstract

Offenbart ist ein Wafer-Bearbeitungsverfahren zum Entfernen eines ringförmigen Verstärkungsbereichs, wobei der ringförmige Verstärkungsbereich um einen Wafer-Bauteilbereich ausgebildet ist. Das Verfahren umfasst das Stützen des Wafers durch ein Klebeband an einem ringförmigen Rahmen, das Bilden einer Kennzeichnung, die einer Kerbe entspricht, an einer Position radial innerhalb eines Grenzbereichs zwischen dem Verstärkungsbereich und dem Bauteilbereich, das Schneiden des Grenzbereichs gemeinsam mit dem Klebeband auf, um dadurch den Verstärkungsbereich vom Bauteilbereich zu entfernen, und das Bewegen des ringförmigen Verstärkungsbereichs, der durch das Klebeband am ringförmigen Rahmen gestützt wird, von einem Haltetisch weg, um dadurch den ringförmigen Verstärkungsbereich vom Wafer zu entfernen.
ATA50315/2017A 2016-04-18 2017-04-18 Waferbearbeitungsverfahren AT518580A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016082781A JP6672053B2 (ja) 2016-04-18 2016-04-18 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
AT518580A2 AT518580A2 (de) 2017-11-15
AT518580A3 true AT518580A3 (de) 2019-04-15

Family

ID=59980466

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA50315/2017A AT518580A3 (de) 2016-04-18 2017-04-18 Waferbearbeitungsverfahren

Country Status (8)

Country Link
US (1) US10211076B2 (de)
JP (1) JP6672053B2 (de)
KR (1) KR102327962B1 (de)
CN (1) CN107305863B (de)
AT (1) AT518580A3 (de)
DE (1) DE102017206400B4 (de)
MY (1) MY179206A (de)
TW (1) TWI706455B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7045811B2 (ja) * 2017-07-06 2022-04-01 リンテック株式会社 除去装置および除去方法
JP6955919B2 (ja) * 2017-07-06 2021-10-27 リンテック株式会社 除去装置および除去方法
JP2019016691A (ja) * 2017-07-06 2019-01-31 リンテック株式会社 除去装置および除去方法
JP7089136B2 (ja) * 2018-03-22 2022-06-22 株式会社デンソー ウエーハの研削方法
EP3782189A1 (de) * 2018-04-20 2021-02-24 AGC Glass Europe Präzisionspositionierungsvorrichtung
JP7061012B2 (ja) * 2018-05-01 2022-04-27 株式会社ディスコ 加工装置
KR102217780B1 (ko) 2018-06-12 2021-02-19 피에스케이홀딩스 (주) 정렬 장치
CN116213967A (zh) * 2018-12-21 2023-06-06 东京毅力科创株式会社 周缘去除装置和周缘去除方法
TWI716931B (zh) * 2019-07-10 2021-01-21 昇陽國際半導體股份有限公司 太鼓晶圓環形切割製程方法
JP7358107B2 (ja) * 2019-07-31 2023-10-10 株式会社ディスコ レーザー加工装置
JP7373940B2 (ja) * 2019-08-15 2023-11-06 株式会社ディスコ ウェーハの加工方法及び切削装置
JP7370265B2 (ja) * 2020-01-30 2023-10-27 株式会社ディスコ 加工方法及び加工装置
JP7482653B2 (ja) * 2020-03-10 2024-05-14 株式会社ディスコ マーキング方法
DE102020203479A1 (de) 2020-03-18 2021-09-23 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung und Verfahren zum Herstellen einer Lage für Brennstoffzellen
JP7407045B2 (ja) * 2020-03-25 2023-12-28 株式会社東京精密 ウェハの再研削方法
JP7442938B2 (ja) * 2020-06-05 2024-03-05 株式会社ディスコ ウエーハの加工方法、及び加工装置
JP7464472B2 (ja) * 2020-07-17 2024-04-09 株式会社ディスコ 加工装置
JP7517936B2 (ja) * 2020-10-01 2024-07-17 株式会社ディスコ 加工装置
JP7599776B2 (ja) * 2020-10-02 2024-12-16 株式会社ディスコ 被加工物の加工方法
JP7542917B2 (ja) * 2020-11-10 2024-09-02 株式会社ディスコ ウエーハの生成方法
US11551923B2 (en) * 2021-01-15 2023-01-10 Phoenix Silicon International Corp. Taiko wafer ring cut process method
JP7688494B2 (ja) * 2021-02-22 2025-06-04 株式会社ディスコ 加工装置
JP7730666B2 (ja) 2021-06-01 2025-08-28 株式会社ディスコ 加工方法および加工装置
JP7749357B2 (ja) * 2021-06-25 2025-10-06 株式会社ディスコ 検査装置及びレーザー加工装置
JP7762518B2 (ja) * 2021-08-10 2025-10-30 株式会社ディスコ 加工装置
CN113658901B (zh) * 2021-10-21 2022-01-21 西安奕斯伟材料科技有限公司 晶圆v型缺口中心的定位方法、系统及计算机存储介质
JP2023112771A (ja) * 2022-02-02 2023-08-15 株式会社ディスコ 加工装置
CN114256083B (zh) * 2022-03-01 2022-06-03 江苏京创先进电子科技有限公司 太鼓环移除方法
CN114628299B (zh) * 2022-03-16 2023-03-24 江苏京创先进电子科技有限公司 晶圆对中确认方法及太鼓环切割方法
KR102754959B1 (ko) * 2022-06-29 2025-01-21 (주)미래컴퍼니 표시 장치 제조에 사용되는 레이저 가공 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19810546A1 (de) * 1997-03-11 1998-09-17 Super Silicon Crystal Res Inst Herstellung eines einkerbungsfreien Wafers
DE10349694A1 (de) * 2002-10-24 2004-05-13 Lintec Corp. Ausrichtungseinrichtung
US20090057841A1 (en) * 2007-09-04 2009-03-05 Disco Corporation Wafer
JP2013055139A (ja) * 2011-09-01 2013-03-21 Disco Abrasive Syst Ltd ウエーハ及び識別マーク形成方法
DE102015201833A1 (de) * 2014-02-05 2015-08-06 Disco Corporation Haltetisch
DE102015208893A1 (de) * 2014-05-13 2015-11-19 Disco Corporation Waferbearbeitungsverfahren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4296885B2 (ja) * 2003-09-17 2009-07-15 オムロン株式会社 円形物におけるマーク検出方法、ノッチ検出方法、半導体ウェーハの向き検査方法、および半導体ウェーハの向き検査装置
JP5390740B2 (ja) 2005-04-27 2014-01-15 株式会社ディスコ ウェーハの加工方法
KR100802596B1 (ko) * 2006-05-11 2008-02-13 (주)와이티에스 아이디위치 검사기능을 갖는 레이저마킹 시스템 및 그검사방법
JP2013248624A (ja) * 2012-05-30 2013-12-12 Disco Corp レーザー加工装置
JP6286256B2 (ja) * 2014-03-31 2018-02-28 株式会社東京精密 ウエハマーキング・研削装置及びウエハマーキング・研削方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19810546A1 (de) * 1997-03-11 1998-09-17 Super Silicon Crystal Res Inst Herstellung eines einkerbungsfreien Wafers
DE10349694A1 (de) * 2002-10-24 2004-05-13 Lintec Corp. Ausrichtungseinrichtung
US20090057841A1 (en) * 2007-09-04 2009-03-05 Disco Corporation Wafer
JP2013055139A (ja) * 2011-09-01 2013-03-21 Disco Abrasive Syst Ltd ウエーハ及び識別マーク形成方法
DE102015201833A1 (de) * 2014-02-05 2015-08-06 Disco Corporation Haltetisch
DE102015208893A1 (de) * 2014-05-13 2015-11-19 Disco Corporation Waferbearbeitungsverfahren

Also Published As

Publication number Publication date
TW201738950A (zh) 2017-11-01
DE102017206400A1 (de) 2017-10-19
JP6672053B2 (ja) 2020-03-25
AT518580A2 (de) 2017-11-15
KR20170119297A (ko) 2017-10-26
JP2017195219A (ja) 2017-10-26
DE102017206400B4 (de) 2022-03-03
KR102327962B1 (ko) 2021-11-17
CN107305863A (zh) 2017-10-31
MY179206A (en) 2020-11-01
TWI706455B (zh) 2020-10-01
CN107305863B (zh) 2021-04-23
US20170301571A1 (en) 2017-10-19
US10211076B2 (en) 2019-02-19

Similar Documents

Publication Publication Date Title
AT518580A3 (de) Waferbearbeitungsverfahren
AT515730A3 (de) Verfahren zum Bearbeiten von Wafern
AT517792A3 (de) Aufspannvorrichtung zum Ansaugen und Halten eines Wafers
EP3780682A4 (de) Verfahren und vorrichtung zum abonnieren eines dienstes
EP3538473A4 (de) Vorrichtung zur positionierung eines objektes relativ zu einer stütze durch aufblasbare luftkissenelemente und verfahren zum betrieb der vorrichtung sowie verfahren zum bewegen eines gegenstands
EP3459287A4 (de) Vorrichtung, system und verfahren zum beenden des pfades eines nachbarbewusstseinsnetzwerks (nan)
AT519311A3 (de) Positionierungsvorrichtung
DE112018002082A5 (de) Verfahren und Vorrichtung zum Ausbilden einer Schicht auf einem Halbleitersubstrat sowie Halbleitersubstrat
EP3634085C0 (de) Verfahren und vorrichtung zum betreiben eines kochfelds, kochgeschirr und kochfeld
EP3646962C0 (de) Verfahren zum schneiden einer metallplatte, verfahren zur herstellung eines metallformteils und metallformteil
DE112017000938T8 (de) Verfahren zum Reinigen eines Halbleiterwafers
DE112018001835A5 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement
EP3181291A3 (de) Werkstück mit optischem linsenrohling, verfahren zu dessen herstellung und verfahren zu dessen bearbeitung
DE112017006309A5 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE112017007406T8 (de) SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät
EP3944022C0 (de) Verfahren und vorrichtung zur charakterisierung eines durch wenigstens einen lithographieschritt strukturierten wafers
DE112019004523A5 (de) Verfahren und entnahmevorrichtung zum entnehmen von werkstücken von einem bearbeitungstisch
DE112022002189T8 (de) Stützgestell, Stützvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
EP4084043A4 (de) Halbleiterelement, verfahren zur herstellung eines halbleiterelements, halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
EP3533529A4 (de) Verfahren zum zentrieren einer schwingenden abdichtungsvorrichtung, verfahren zur herstellung einer schwingenden abdichtungsvorrichtung, verfahren zur herstellung eines nabeneinheitslagers, verfahren zur herstellung eines fahrzeugs, vorrichtung zum zentrieren einer schwingenden abdichtungsvorrichtung und schwingendes abdichtungssystem
EP3602198C0 (de) Verfahren zum detektieren von partikeln an der oberfläche eines objekts, wafer und maskenblank
EP3620878A4 (de) System zum betrieb eines lastwagens und verfahren zum betrieb eines lastwagens
EP3703120A4 (de) Verfahren zur herstellung eines halbleiterbauelements
EP4017697C0 (de) Verfahren zum erzeugen eines bauelements
EP3853678C0 (de) Verfahren zum positionieren eines werkstückes und vorrichtung dafür

Legal Events

Date Code Title Description
REJ Rejection

Effective date: 20240215