ATE110190T1 - Heteroübergang-bipolartransistor. - Google Patents

Heteroübergang-bipolartransistor.

Info

Publication number
ATE110190T1
ATE110190T1 AT88903305T AT88903305T ATE110190T1 AT E110190 T1 ATE110190 T1 AT E110190T1 AT 88903305 T AT88903305 T AT 88903305T AT 88903305 T AT88903305 T AT 88903305T AT E110190 T1 ATE110190 T1 AT E110190T1
Authority
AT
Austria
Prior art keywords
silicon
pct
germanium
bipolar transistor
heterojunction bipolar
Prior art date
Application number
AT88903305T
Other languages
English (en)
Inventor
Colin Smith
Anthony David Welbourn
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Application granted granted Critical
Publication of ATE110190T1 publication Critical patent/ATE110190T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
AT88903305T 1987-04-14 1988-04-14 Heteroübergang-bipolartransistor. ATE110190T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878708926A GB8708926D0 (en) 1987-04-14 1987-04-14 Bipolar transistor

Publications (1)

Publication Number Publication Date
ATE110190T1 true ATE110190T1 (de) 1994-09-15

Family

ID=10615807

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88903305T ATE110190T1 (de) 1987-04-14 1988-04-14 Heteroübergang-bipolartransistor.

Country Status (8)

Country Link
US (1) US5006912A (de)
EP (1) EP0360804B1 (de)
JP (1) JP2644022B2 (de)
AT (1) ATE110190T1 (de)
DE (1) DE3851147T2 (de)
GB (1) GB8708926D0 (de)
HK (1) HK137296A (de)
WO (1) WO1988008206A1 (de)

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US5159424A (en) * 1988-12-10 1992-10-27 Canon Kabushiki Kaisha Semiconductor device having a high current gain and a higher ge amount at the base region than at the emitter and collector region, and photoelectric conversion apparatus using the device
EP0380077A3 (de) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor, versehen mit einer gedehnten Schicht aus Germanium
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
DE3930536A1 (de) * 1989-09-13 1991-03-21 Licentia Gmbh Verfahren zur herstellung eines silizium-bipolartransistors
US5102810A (en) * 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
DE59010471D1 (de) * 1990-06-07 1996-10-02 Siemens Ag Verfahren zur Herstellung von Bipolartransistoren mit extrem reduzierter Basis-Kollektor-Kapazität
US5105250A (en) * 1990-10-09 1992-04-14 Motorola, Inc. Heterojunction bipolar transistor with a thin silicon emitter
DE69107779T2 (de) * 1990-10-31 1995-09-21 Ibm Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren.
US5240876A (en) * 1991-02-22 1993-08-31 Harris Corporation Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process
US5218213A (en) * 1991-02-22 1993-06-08 Harris Corporation SOI wafer with sige
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JP3132101B2 (ja) * 1991-11-20 2001-02-05 日本電気株式会社 半導体装置の製造方法
US5266813A (en) * 1992-01-24 1993-11-30 International Business Machines Corporation Isolation technique for silicon germanium devices
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
US5304816A (en) * 1992-11-25 1994-04-19 At&T Bell Laboratories Article comprising a "ballistic" heterojunction bipolar transistor
US5426316A (en) * 1992-12-21 1995-06-20 International Business Machines Corporation Triple heterojunction bipolar transistor
US5389803A (en) * 1993-03-29 1995-02-14 International Business Machines Corporation High-gain Si/SiGe MIS heterojunction bipolar transistors
US5685946A (en) * 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5461245A (en) * 1994-08-24 1995-10-24 At&T Corp. Article comprising a bipolar transistor with floating base
DE19824110A1 (de) * 1998-05-29 1999-12-09 Daimler Chrysler Ag Resonanz Phasen Transistor mit Laufzeitverzögerung
US6211562B1 (en) 1999-02-24 2001-04-03 Micron Technology, Inc. Homojunction semiconductor devices with low barrier tunnel oxide contacts
SE516338C2 (sv) * 1999-05-31 2001-12-17 Ericsson Telefon Ab L M RF-effekttransistor med kollektor upp
DE19940278A1 (de) * 1999-08-26 2001-03-08 Inst Halbleiterphysik Gmbh Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung
US6573539B2 (en) * 2000-01-10 2003-06-03 International Business Machines Corporation Heterojunction bipolar transistor with silicon-germanium base
US6437376B1 (en) * 2000-03-01 2002-08-20 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) with three-dimensional base contact
US6365479B1 (en) * 2000-09-22 2002-04-02 Conexant Systems, Inc. Method for independent control of polycrystalline silicon-germanium in a silicon-germanium HBT and related structure
US6552406B1 (en) 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
US6767842B2 (en) * 2002-07-09 2004-07-27 Lsi Logic Corporation Implementation of Si-Ge HBT with CMOS process
US7439558B2 (en) * 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7528065B2 (en) * 2006-01-17 2009-05-05 International Business Machines Corporation Structure and method for MOSFET gate electrode landing pad
JP2007250903A (ja) 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
EP1837917A1 (de) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtige Halbleiterspeichervorrichtung
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US20100117059A1 (en) * 2006-08-11 2010-05-13 Paul Scherrer Institut Light modulation comprising si-ge quantum well layers
US20080179636A1 (en) * 2007-01-27 2008-07-31 International Business Machines Corporation N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers
US9653639B2 (en) * 2012-02-07 2017-05-16 Apic Corporation Laser using locally strained germanium on silicon for opto-electronic applications
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DE2719464A1 (de) * 1977-04-30 1978-12-21 Erich Dr Kasper Verfahren zur herstellung von bipolaren hochfrequenztransistoren
US4529455A (en) * 1983-10-28 1985-07-16 At&T Bell Laboratories Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
JPS63118485A (ja) * 1986-11-05 1988-05-23 ナショナル住宅産業株式会社 壁

Also Published As

Publication number Publication date
DE3851147D1 (de) 1994-09-22
EP0360804B1 (de) 1994-08-17
WO1988008206A1 (en) 1988-10-20
JPH02504205A (ja) 1990-11-29
DE3851147T2 (de) 1995-02-23
EP0360804A1 (de) 1990-04-04
HK137296A (en) 1996-08-02
US5006912A (en) 1991-04-09
GB8708926D0 (en) 1987-05-20
JP2644022B2 (ja) 1997-08-25

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee