ATE114386T1 - Halbleiterheterostruktur. - Google Patents

Halbleiterheterostruktur.

Info

Publication number: ATE114386T1
Authority: AT; Austria
Prior art keywords: layers; heterosstructure; semiconductor; monolayers; silicon
Prior art date: 1987-12-23

Application number

AT89901135T

Other languages

English (en)

Inventor

Michael Anthony Gell

Original Assignee

British Telecomm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-12-23

Filing date

1988-12-22

Publication date

1994-12-15

1987-12-23 Priority claimed from GB878729953A external-priority patent/GB8729953D0/en

1988-03-28 Priority claimed from GB888807350A external-priority patent/GB8807350D0/en

1988-07-27 Priority claimed from GB888817884A external-priority patent/GB8817884D0/en

1988-08-25 Priority claimed from GB888820150A external-priority patent/GB8820150D0/en

1988-12-22 Application filed by British Telecomm filed Critical British Telecomm

1994-12-15 Application granted granted Critical

1994-12-15 Publication of ATE114386T1 publication Critical patent/ATE114386T1/de

Links

239000004065 semiconductor Substances 0.000 title abstract 2
229910052732 germanium Inorganic materials 0.000 abstract 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
229910052710 silicon Inorganic materials 0.000 abstract 2
239000010703 silicon Substances 0.000 abstract 2
229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials

Landscapes

Recrystallisation Techniques (AREA)
Led Devices (AREA)
Light Receiving Elements (AREA)
Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Bipolar Transistors (AREA)
Thin Film Transistor (AREA)

AT89901135T 1987-12-23 1988-12-22 Halbleiterheterostruktur. ATE114386T1 (de)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
GB878729953A GB8729953D0 (en)	1987-12-23	1987-12-23	Semiconductor heterostructures
GB888807350A GB8807350D0 (en)	1988-03-28	1988-03-28	Semiconductor heterostructures
GB888817884A GB8817884D0 (en)	1988-07-27	1988-07-27	Semiconductor heterostructures
GB888820150A GB8820150D0 (en)	1988-08-25	1988-08-25	Semiconductor heterostructures

Publications (1)

Publication Number	Publication Date
ATE114386T1 true ATE114386T1 (de)	1994-12-15

Family

ID=27450021

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT89901135T ATE114386T1 (de)	1987-12-23	1988-12-22	Halbleiterheterostruktur.

Country Status (9)

Country	Link
US (1)	US4959694A (de)
EP (1)	EP0393135B1 (de)
JP (1)	JP2740029B2 (de)
CN (1)	CN1013536B (de)
AT (1)	ATE114386T1 (de)
CA (1)	CA1301957C (de)
DE (1)	DE3852180T2 (de)
HK (1)	HK137996A (de)
WO (1)	WO1989006050A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5266813A (en) *	1992-01-24	1993-11-30	International Business Machines Corporation	Isolation technique for silicon germanium devices
US5244749A (en) *	1992-08-03	1993-09-14	At&T Bell Laboratories	Article comprising an epitaxial multilayer mirror
US6664115B2 (en) *	1992-10-23	2003-12-16	Symetrix Corporation	Metal insulator structure with polarization-compatible buffer layer
US5357119A (en) *	1993-02-19	1994-10-18	Board Of Regents Of The University Of California	Field effect devices having short period superlattice structures using Si and Ge
US5329257A (en) *	1993-04-30	1994-07-12	International Business Machines Corproation	SiGe transferred electron device and oscillator using same
US5298457A (en) *	1993-07-01	1994-03-29	G. I. Corporation	Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material
US5685946A (en) *	1993-08-11	1997-11-11	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5917195A (en) *	1995-02-17	1999-06-29	B.A. Painter, Iii	Phonon resonator and method for its production
DE19714054A1 (de) *	1997-04-05	1998-10-08	Daimler Benz Ag	SiGe-Photodetektor mit hohem Wirkungsgrad
US6154475A (en) *	1997-12-04	2000-11-28	The United States Of America As Represented By The Secretary Of The Air Force	Silicon-based strain-symmetrized GE-SI quantum lasers
JP5066321B2 (ja)	2000-08-04	2012-11-07	台湾積體電路製造股▲ふん▼有限公司	モノリシックｏｅｉｃ用埋め込み光電子材料を備えたシリコンウエハ
US6734453B2 (en)	2000-08-08	2004-05-11	Translucent Photonics, Inc.	Devices with optical gain in silicon
US6528827B2 (en)	2000-11-10	2003-03-04	Optolynx, Inc.	MSM device and method of manufacturing same
WO2003036698A2 (en) *	2001-10-26	2003-05-01	Sige Semiconductor Inc.	Method of depositing high-quality sige on sige substrates
US7271458B2 (en) *	2002-04-15	2007-09-18	The Board Of Trustees Of The Leland Stanford Junior University	High-k dielectric for thermodynamically-stable substrate-type materials
WO2003096390A1 (en) *	2002-04-15	2003-11-20	Stanford University	High-k dielectric for thermodynamically-stable substrate-type materials
ATE365382T1 (de) *	2002-11-29	2007-07-15	Max Planck Gesellschaft	Halbleiterstruktur für infrarotbereich und herstellungsverfahren
US6878576B1 (en) *	2003-06-26	2005-04-12	Rj Mears, Llc	Method for making semiconductor device including band-engineered superlattice
US20090166770A1 (en) *	2008-01-02	2009-07-02	International Business Machines Corporation	Method of fabricating gate electrode for gate of mosfet and structure thereof
CN105429001B (zh) *	2015-10-27	2019-06-25	西安电子科技大学	Si/Ge超晶格量子级联激光器及其制备方法
CN115537916B (zh) *	2022-10-13	2024-07-16	上海理工大学	一种iv族直接带隙半导体超晶格材料及其应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3626257A (en) *	1969-04-01	1971-12-07	Ibm	Semiconductor device with superlattice region
DE2139436A1 (de) *	1971-08-06	1973-02-22	Licentia Gmbh	Halbleiterlaser
NL8301215A (nl) *	1983-04-07	1984-11-01	Philips Nv	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JPS6028268A (ja) *	1983-07-26	1985-02-13	Agency Of Ind Science & Technol	半導体装置
US4529455A (en) *	1983-10-28	1985-07-16	At&T Bell Laboratories	Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
US4661829A (en) *	1985-06-05	1987-04-28	American Telephone And Telegraph Company, At&T Bell Laboratories	Device using ordered semiconductor alloy
CA1282671C (en) *	1985-11-18	1991-04-09	John Condon Bean	Device having strain induced region
US4814837A (en) *	1986-03-13	1989-03-21	The United States Of America As Represented By The Secretary Of The Navy	Quantum well electron barrier diode

1988
- 1988-12-22 CA CA000586931A patent/CA1301957C/en not_active Expired - Lifetime
- 1988-12-22 EP EP89901135A patent/EP0393135B1/de not_active Expired - Lifetime
- 1988-12-22 AT AT89901135T patent/ATE114386T1/de active
- 1988-12-22 WO PCT/GB1988/001118 patent/WO1989006050A1/en not_active Ceased
- 1988-12-22 JP JP1501155A patent/JP2740029B2/ja not_active Expired - Lifetime
- 1988-12-22 DE DE3852180T patent/DE3852180T2/de not_active Expired - Lifetime
- 1988-12-23 CN CN88109267A patent/CN1013536B/zh not_active Expired
- 1988-12-23 US US07/288,828 patent/US4959694A/en not_active Expired - Lifetime
1996
- 1996-07-25 HK HK137996A patent/HK137996A/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
WO1989006050A1 (en)	1989-06-29
JP2740029B2 (ja)	1998-04-15
US4959694A (en)	1990-09-25
EP0393135B1 (de)	1994-11-23
JPH03503343A (ja)	1991-07-25
CN1035585A (zh)	1989-09-13
EP0393135A1 (de)	1990-10-24
DE3852180D1 (de)	1995-01-05
CN1013536B (zh)	1991-08-14
CA1301957C (en)	1992-05-26
DE3852180T2 (de)	1995-04-06
HK137996A (en)	1996-08-02

Publication	Publication Date	Title
ATE114386T1 (de)	1994-12-15	Halbleiterheterostruktur.
NO890768D0 (no)	1989-02-23	Anordning for transport av fluider mellom sjoebunnen og overflaten.
EP0486047A3 (en)	1996-04-10	Thin film semiconductor device, process for fabricating the same, and silicon film
EP0658944A3 (de)	1997-05-07	Dünnschichthalbleitervorrichtung und Herstellungsverfahren.
DE68923129D1 (de)	1995-07-27	Verpackungselement für Halbleiterbauelement und Verfahren zur Herstellung des Verpackungselementes.
DE68916276D1 (de)	1994-07-28	Gerät für Dokumententransport mit Vakuumband.
DE69529426D1 (de)	2003-02-20	Versandverpackung für Halbleiterscheibe
TW356571B (en)	1999-04-21	Method of forming stress adjustable insulator film semiconductor device and its fabrication method
TR27436A (tr)	1995-05-23	Sürekli ilerleyen bir tasiyici üzerinde bir kartonun kapama kanatlarinin yapistirilmasi icin bir yöntem ve tertibat.
ITTO940006A0 (it)	1994-01-10	Procedimento per produrre un wafer di semiconduttore e corrispondente sistema.
EP0559986A3 (en)	1993-12-15	Method for producing semiconductor wafer and substrate used for producing the semiconductor
DE69414534D1 (de)	1998-12-17	Bonding-Verfahren für Silizium-Wafer
DE59300120D1 (de)	1995-05-11	Verfahren zum kontaminationsfreien Zerkleinern von Halbleitermaterial, insbesondere Silicium.
DE69011345D1 (de)	1994-09-08	Riemenspannvorrichtung und verfahren zu deren herstellung.
EP0619602A3 (de)	1995-01-25	Halbleitervorrichtung und Herstellungsverfahren.
DK0491899T3 (da)	1995-04-10	Indretning til vending af smågods, især pakker på et transportbånd
DE68916182D1 (de)	1994-07-21	Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
NL190388C (nl)	1994-02-01	Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting.
AU2003283367A1 (en)	2004-06-03	Transport system for nonmagnetic flat objects
IT8468197A1 (it)	1986-05-30	Procedimento per la formazione di cataste di oggetti tubolari o simili, e dispositivo per la sua attuazione.
FI943575A0 (fi)	1994-08-01	Lajittelulaite arkkimaisia tuotteita varten
CA2193870A1 (en)	1997-06-26	Treponema Pallidum Fused Antigen and Assay for Anti-Treponema Pallidum Antibodies Using the Same Fused Antigen
ATE281380T1 (de)	2004-11-15	Dehnbares förderband und verfahren zur seiner herstellung
WO2000013995A3 (de)	2000-12-07	Einrichtung zum transportieren von blattförmigem fördergut
NL194710B (nl)	2002-08-01	Werkwijze voor het vervaardigen van een halfgeleiderinrichting.