ATE116760T1 - Eeprom-anordnung. - Google Patents

Eeprom-anordnung.

Info

Publication number
ATE116760T1
ATE116760T1 AT90303690T AT90303690T ATE116760T1 AT E116760 T1 ATE116760 T1 AT E116760T1 AT 90303690 T AT90303690 T AT 90303690T AT 90303690 T AT90303690 T AT 90303690T AT E116760 T1 ATE116760 T1 AT E116760T1
Authority
AT
Austria
Prior art keywords
current mirror
eeprom
block
current
charge
Prior art date
Application number
AT90303690T
Other languages
English (en)
Inventor
David Kevin Sowards
Original Assignee
Exar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exar Corp filed Critical Exar Corp
Application granted granted Critical
Publication of ATE116760T1 publication Critical patent/ATE116760T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Bidet-Like Cleaning Device And Other Flush Toilet Accessories (AREA)
  • Plural Heterocyclic Compounds (AREA)
AT90303690T 1989-04-26 1990-04-06 Eeprom-anordnung. ATE116760T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/343,974 US5148395A (en) 1989-04-26 1989-04-26 Dual eeprom cell with current mirror differential read

Publications (1)

Publication Number Publication Date
ATE116760T1 true ATE116760T1 (de) 1995-01-15

Family

ID=23348479

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90303690T ATE116760T1 (de) 1989-04-26 1990-04-06 Eeprom-anordnung.

Country Status (6)

Country Link
US (1) US5148395A (de)
EP (1) EP0396263B1 (de)
JP (1) JPH0322295A (de)
KR (1) KR0157049B1 (de)
AT (1) ATE116760T1 (de)
DE (1) DE69015686D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337280A (en) * 1990-09-27 1994-08-09 Oki Electric Industry Co., Ltd. EEPROM circuit
JP2744144B2 (ja) * 1991-03-14 1998-04-28 株式会社東芝 半導体記憶装置
US5291045A (en) * 1991-03-29 1994-03-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device using a differential cell in a memory cell
US5309391A (en) * 1992-10-02 1994-05-03 National Semiconductor Corporation Symmetrical polarization enhancement in a ferroelectric memory cell
FR2703526B1 (fr) * 1993-04-02 1995-05-19 Gemplus Card Int Circuit de déclenchement automatique.
US5933370A (en) * 1998-01-09 1999-08-03 Information Storage Devices, Inc. Trimbit circuit for flash memory
FR2778253B1 (fr) * 1998-04-30 2000-06-02 Sgs Thomson Microelectronics Dispositif de configuration d'options dans un circuit integre et procede de mise en oeuvre

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4727519A (en) * 1985-11-25 1988-02-23 Motorola, Inc. Memory device including a clock generator with process tracking
US4791324A (en) * 1987-04-10 1988-12-13 Motorola, Inc. CMOS differential-amplifier sense amplifier
JP2507529B2 (ja) * 1988-03-31 1996-06-12 株式会社東芝 不揮発性半導体記憶装置
JPH01271996A (ja) * 1988-04-22 1989-10-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements

Also Published As

Publication number Publication date
DE69015686D1 (de) 1995-02-16
KR900017038A (ko) 1990-11-15
EP0396263A2 (de) 1990-11-07
EP0396263B1 (de) 1995-01-04
JPH0322295A (ja) 1991-01-30
US5148395A (en) 1992-09-15
EP0396263A3 (de) 1991-12-27
KR0157049B1 (ko) 1998-12-01

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Legal Events

Date Code Title Description
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