ATE125643T1 - Ladungspumpvorrichtung. - Google Patents

Ladungspumpvorrichtung.

Info

Publication number
ATE125643T1
ATE125643T1 AT91302389T AT91302389T ATE125643T1 AT E125643 T1 ATE125643 T1 AT E125643T1 AT 91302389 T AT91302389 T AT 91302389T AT 91302389 T AT91302389 T AT 91302389T AT E125643 T1 ATE125643 T1 AT E125643T1
Authority
AT
Austria
Prior art keywords
charge pump
capacitor
pump circuit
series
mos capacitor
Prior art date
Application number
AT91302389T
Other languages
English (en)
Inventor
Colin Stewart Bill
Buskirk Michael A Van
Antonio J Montalvo
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE125643T1 publication Critical patent/ATE125643T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of The Air-Fuel Ratio Of Carburetors (AREA)
  • Read Only Memory (AREA)
  • Electromagnetic Pumps, Or The Like (AREA)
  • Fats And Perfumes (AREA)
AT91302389T 1990-04-05 1991-03-20 Ladungspumpvorrichtung. ATE125643T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/505,335 US5059815A (en) 1990-04-05 1990-04-05 High voltage charge pumps with series capacitors

Publications (1)

Publication Number Publication Date
ATE125643T1 true ATE125643T1 (de) 1995-08-15

Family

ID=24009911

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91302389T ATE125643T1 (de) 1990-04-05 1991-03-20 Ladungspumpvorrichtung.

Country Status (8)

Country Link
US (1) US5059815A (de)
EP (1) EP0450797B1 (de)
JP (1) JP3260144B2 (de)
AT (1) ATE125643T1 (de)
DE (1) DE69111499T2 (de)
DK (1) DK0450797T3 (de)
ES (1) ES2076465T3 (de)
GR (1) GR3017507T3 (de)

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US5745354A (en) * 1996-04-01 1998-04-28 Cypress Semiconductor Corporation Pump circuit for generating multiple high voltage outputs from two different inputs
US5801934A (en) * 1996-12-12 1998-09-01 Cypress Semiconductor Corp. Charge pump with reduced power consumption
US5798915A (en) * 1997-01-29 1998-08-25 Microchip Technology Incorporated Progressive start-up charge pump and method therefor
EP0856935B1 (de) * 1997-02-03 2003-11-05 Denso Corporation Ladungspumpenschaltung
KR20000068537A (ko) * 1997-07-10 2000-11-25 씨. 필립 채프맨 순차 스타트업 전하 펌프 및 그 제공 방법
US6232826B1 (en) * 1998-01-12 2001-05-15 Intel Corporation Charge pump avoiding gain degradation due to the body effect
US5999425A (en) * 1998-01-15 1999-12-07 Cypress Semiconductor Corp. Charge pump architecture for integrated circuit
US6166982A (en) * 1998-06-25 2000-12-26 Cypress Semiconductor Corp. High voltage switch for eeprom/flash memories
US6172553B1 (en) 1998-06-25 2001-01-09 Cypress Semiconductor Corp. High voltage steering network for EEPROM/FLASH memory
US6094095A (en) * 1998-06-29 2000-07-25 Cypress Semiconductor Corp. Efficient pump for generating voltages above and/or below operating voltages
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
KR100557926B1 (ko) * 1999-06-29 2006-03-10 주식회사 하이닉스반도체 펌핑 캐패시터 및 그의 제조방법
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
US6255896B1 (en) * 1999-09-27 2001-07-03 Intel Corporation Method and apparatus for rapid initialization of charge pump circuits
US6297974B1 (en) * 1999-09-27 2001-10-02 Intel Corporation Method and apparatus for reducing stress across capacitors used in integrated circuits
KR100377698B1 (ko) * 1999-12-08 2003-03-29 산요 덴키 가부시키가이샤 차지펌프 회로
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
JP3696125B2 (ja) 2000-05-24 2005-09-14 株式会社東芝 電位検出回路及び半導体集積回路
US6570434B1 (en) * 2000-09-15 2003-05-27 Infineon Technologies Ag Method to improve charge pump reliability, efficiency and size
DE10045693A1 (de) 2000-09-15 2002-04-04 Infineon Technologies Ag Ladungspumpenschaltung
KR20020048242A (ko) * 2000-12-18 2002-06-22 밍 루 풀업 구동부의 고전압 공급장치
US6366158B1 (en) 2000-12-27 2002-04-02 Intel Corporation Self initialization for charge pumps
JP2003033007A (ja) * 2001-07-09 2003-01-31 Sanyo Electric Co Ltd チャージポンプ回路の制御方法
US6888399B2 (en) * 2002-02-08 2005-05-03 Rohm Co., Ltd. Semiconductor device equipped with a voltage step-up circuit
US6642774B1 (en) 2002-06-28 2003-11-04 Intel Corporation High precision charge pump regulation
US6922096B2 (en) * 2003-08-07 2005-07-26 Sandisk Corporation Area efficient charge pump
JP2006005089A (ja) 2004-06-16 2006-01-05 Fujitsu Ltd 半導体装置
JP2006311703A (ja) * 2005-04-28 2006-11-09 Seiko Instruments Inc チャージポンプ回路を有する電子機器
WO2006132757A2 (en) * 2005-06-03 2006-12-14 Atmel Corporation High efficiency bi-directional charge pump circuit
JP2007096036A (ja) * 2005-09-29 2007-04-12 Matsushita Electric Ind Co Ltd 昇圧回路
US7629831B1 (en) * 2006-10-11 2009-12-08 Altera Corporation Booster circuit with capacitor protection circuitry
KR100803364B1 (ko) * 2006-11-13 2008-02-13 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로
US7859240B1 (en) 2007-05-22 2010-12-28 Cypress Semiconductor Corporation Circuit and method for preventing reverse current flow into a voltage regulator from an output thereof
US7710195B2 (en) * 2008-02-15 2010-05-04 International Business Machines Corporation Two stage voltage boost circuit with precharge circuit preventing leakage, IC and design structure
US7733161B2 (en) * 2008-02-15 2010-06-08 International Business Machines Corporation Voltage boost system, IC and design structure
US7737766B2 (en) * 2008-02-15 2010-06-15 International Business Machines Corporation Two stage voltage boost circuit, IC and design structure
US7969235B2 (en) * 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
KR100915834B1 (ko) * 2008-08-08 2009-09-07 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로
JP6699194B2 (ja) * 2016-01-21 2020-05-27 凸版印刷株式会社 チャージポンプ
JP6690250B2 (ja) * 2016-01-21 2020-04-28 凸版印刷株式会社 チャージポンプ
US11569738B1 (en) 2021-09-29 2023-01-31 Globalfoundries U.S. Inc. Multi-stage charge pump with clock-controlled initial stage and shifted clock-controlled additional stage
US12453178B2 (en) 2023-05-04 2025-10-21 Globalfoundries U.S. Inc. IC structure for connected capacitances and method of forming same
US12512838B2 (en) 2023-07-11 2025-12-30 Globalfoundries U.S. Inc. Single-stage and multi-stage voltage level shifters
US12283952B2 (en) 2023-07-11 2025-04-22 Globalfoundries U.S. Inc. Voltage level shifter with multi-step programmable high supply voltage and high supply voltage-dependent variable low supply and gate bias voltages
US12407350B2 (en) 2023-07-11 2025-09-02 Globalfoundries U.S. Inc. Voltage level shifter with programmable high supply voltage and high supply voltage-dependent variable low supply voltage
US12348133B2 (en) 2023-07-11 2025-07-01 Globalfoundries U.S. Inc. Multi-stage charge pump circuit including voltage level shifter for clock signal generation

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CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
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JPS645351A (en) * 1987-06-26 1989-01-10 Sharp Kk Boosting circuit
JP2501590B2 (ja) * 1987-07-29 1996-05-29 沖電気工業株式会社 半導体装置の駆動回路
JPH01259751A (ja) * 1988-04-07 1989-10-17 Toshiba Corp 昇圧回路
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DE3931596A1 (de) * 1989-03-25 1990-10-04 Eurosil Electronic Gmbh Spannungsvervielfacherschaltung

Also Published As

Publication number Publication date
EP0450797A1 (de) 1991-10-09
DE69111499D1 (de) 1995-08-31
EP0450797B1 (de) 1995-07-26
DE69111499T2 (de) 1996-03-07
ES2076465T3 (es) 1995-11-01
JPH05268761A (ja) 1993-10-15
GR3017507T3 (en) 1995-12-31
DK0450797T3 (da) 1995-09-11
JP3260144B2 (ja) 2002-02-25
US5059815A (en) 1991-10-22

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee