ES2076465T3 - Aparato de bomba de carga. - Google Patents

Aparato de bomba de carga.

Info

Publication number
ES2076465T3
ES2076465T3 ES91302389T ES91302389T ES2076465T3 ES 2076465 T3 ES2076465 T3 ES 2076465T3 ES 91302389 T ES91302389 T ES 91302389T ES 91302389 T ES91302389 T ES 91302389T ES 2076465 T3 ES2076465 T3 ES 2076465T3
Authority
ES
Spain
Prior art keywords
capacitor
circuit
load
mos capacitor
load pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91302389T
Other languages
English (en)
Inventor
Colin Stewart Bill
Buskirk Michael A Van
Antonio J Montalvo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ES2076465T3 publication Critical patent/ES2076465T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of The Air-Fuel Ratio Of Carburetors (AREA)
  • Read Only Memory (AREA)
  • Electromagnetic Pumps, Or The Like (AREA)
  • Fats And Perfumes (AREA)

Abstract

SE SUMINISTRA UN CIRCUITO DE BOMBA DE CARGA COMPRENDIENDO UN CONDENSADOR MOS, UN CONDENSADOR ("CONDENSADOR EN SERIES") CONECTADO EN SERIES, UN DIODO MOSFET, Y UNA GRAPA DE TENSION CONECTADA AL NUDO COMUN DEL CONDENSADOR MOS Y EL CONDENSADOR EN SERIES. UN NUMERO DE ESTOS CIRCUITOS DE BOMBA DE CARGA PUEDE SER PUESTO EN CASCADA PARA FORMAR UN CIRCUITO DE VARIAS ETAPAS DE BOMBEO DE CARGA. CADA CIRCUITO PUEDE ALCANZAR UNA TENSION DE SALIDA MAYOR QUE LA TENSION DE ROTURA DE OXIDO DE CADA CONDENSADOR INDIVIDUAL MOS. ESTE CIRCUITO DE BOMBA DE CARGA PUEDE TAMBIEN FUNCIONAR BAJO CONDICIONES BAJAS DE SUMINISTRO DE ENERGIA DE TENSION.
ES91302389T 1990-04-05 1991-03-20 Aparato de bomba de carga. Expired - Lifetime ES2076465T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/505,335 US5059815A (en) 1990-04-05 1990-04-05 High voltage charge pumps with series capacitors

Publications (1)

Publication Number Publication Date
ES2076465T3 true ES2076465T3 (es) 1995-11-01

Family

ID=24009911

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91302389T Expired - Lifetime ES2076465T3 (es) 1990-04-05 1991-03-20 Aparato de bomba de carga.

Country Status (8)

Country Link
US (1) US5059815A (es)
EP (1) EP0450797B1 (es)
JP (1) JP3260144B2 (es)
AT (1) ATE125643T1 (es)
DE (1) DE69111499T2 (es)
DK (1) DK0450797T3 (es)
ES (1) ES2076465T3 (es)
GR (1) GR3017507T3 (es)

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US6166982A (en) * 1998-06-25 2000-12-26 Cypress Semiconductor Corp. High voltage switch for eeprom/flash memories
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US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
KR100557926B1 (ko) * 1999-06-29 2006-03-10 주식회사 하이닉스반도체 펌핑 캐패시터 및 그의 제조방법
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
US6255896B1 (en) * 1999-09-27 2001-07-03 Intel Corporation Method and apparatus for rapid initialization of charge pump circuits
US6297974B1 (en) * 1999-09-27 2001-10-02 Intel Corporation Method and apparatus for reducing stress across capacitors used in integrated circuits
KR100377698B1 (ko) * 1999-12-08 2003-03-29 산요 덴키 가부시키가이샤 차지펌프 회로
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
JP3696125B2 (ja) 2000-05-24 2005-09-14 株式会社東芝 電位検出回路及び半導体集積回路
US6570434B1 (en) * 2000-09-15 2003-05-27 Infineon Technologies Ag Method to improve charge pump reliability, efficiency and size
DE10045693A1 (de) 2000-09-15 2002-04-04 Infineon Technologies Ag Ladungspumpenschaltung
KR20020048242A (ko) * 2000-12-18 2002-06-22 밍 루 풀업 구동부의 고전압 공급장치
US6366158B1 (en) * 2000-12-27 2002-04-02 Intel Corporation Self initialization for charge pumps
JP2003033007A (ja) * 2001-07-09 2003-01-31 Sanyo Electric Co Ltd チャージポンプ回路の制御方法
US6888399B2 (en) * 2002-02-08 2005-05-03 Rohm Co., Ltd. Semiconductor device equipped with a voltage step-up circuit
US6642774B1 (en) 2002-06-28 2003-11-04 Intel Corporation High precision charge pump regulation
US6922096B2 (en) * 2003-08-07 2005-07-26 Sandisk Corporation Area efficient charge pump
JP2006005089A (ja) 2004-06-16 2006-01-05 Fujitsu Ltd 半導体装置
JP2006311703A (ja) * 2005-04-28 2006-11-09 Seiko Instruments Inc チャージポンプ回路を有する電子機器
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US7629831B1 (en) * 2006-10-11 2009-12-08 Altera Corporation Booster circuit with capacitor protection circuitry
KR100803364B1 (ko) * 2006-11-13 2008-02-13 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로
US7859240B1 (en) 2007-05-22 2010-12-28 Cypress Semiconductor Corporation Circuit and method for preventing reverse current flow into a voltage regulator from an output thereof
US7733161B2 (en) * 2008-02-15 2010-06-08 International Business Machines Corporation Voltage boost system, IC and design structure
US7737766B2 (en) * 2008-02-15 2010-06-15 International Business Machines Corporation Two stage voltage boost circuit, IC and design structure
US7710195B2 (en) * 2008-02-15 2010-05-04 International Business Machines Corporation Two stage voltage boost circuit with precharge circuit preventing leakage, IC and design structure
US7969235B2 (en) * 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
KR100915834B1 (ko) * 2008-08-08 2009-09-07 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로
JP6690250B2 (ja) * 2016-01-21 2020-04-28 凸版印刷株式会社 チャージポンプ
JP6699194B2 (ja) * 2016-01-21 2020-05-27 凸版印刷株式会社 チャージポンプ
US11569738B1 (en) 2021-09-29 2023-01-31 Globalfoundries U.S. Inc. Multi-stage charge pump with clock-controlled initial stage and shifted clock-controlled additional stage
US12453178B2 (en) 2023-05-04 2025-10-21 Globalfoundries U.S. Inc. IC structure for connected capacitances and method of forming same
US12283952B2 (en) 2023-07-11 2025-04-22 Globalfoundries U.S. Inc. Voltage level shifter with multi-step programmable high supply voltage and high supply voltage-dependent variable low supply and gate bias voltages
US12348133B2 (en) 2023-07-11 2025-07-01 Globalfoundries U.S. Inc. Multi-stage charge pump circuit including voltage level shifter for clock signal generation
US12407350B2 (en) 2023-07-11 2025-09-02 Globalfoundries U.S. Inc. Voltage level shifter with programmable high supply voltage and high supply voltage-dependent variable low supply voltage
US12512838B2 (en) 2023-07-11 2025-12-30 Globalfoundries U.S. Inc. Single-stage and multi-stage voltage level shifters

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Also Published As

Publication number Publication date
DE69111499D1 (de) 1995-08-31
DK0450797T3 (da) 1995-09-11
EP0450797A1 (en) 1991-10-09
EP0450797B1 (en) 1995-07-26
GR3017507T3 (en) 1995-12-31
JPH05268761A (ja) 1993-10-15
US5059815A (en) 1991-10-22
JP3260144B2 (ja) 2002-02-25
DE69111499T2 (de) 1996-03-07
ATE125643T1 (de) 1995-08-15

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