ATE137606T1 - Laserinterferometersystem zum überwachen und regeln der bearbeitung von integrierten schaltungen - Google Patents

Laserinterferometersystem zum überwachen und regeln der bearbeitung von integrierten schaltungen

Info

Publication number
ATE137606T1
ATE137606T1 AT89113700T AT89113700T ATE137606T1 AT E137606 T1 ATE137606 T1 AT E137606T1 AT 89113700 T AT89113700 T AT 89113700T AT 89113700 T AT89113700 T AT 89113700T AT E137606 T1 ATE137606 T1 AT E137606T1
Authority
AT
Austria
Prior art keywords
holes
monitoring
etching
laser
trenches
Prior art date
Application number
AT89113700T
Other languages
English (en)
Inventor
David Cheng
Robert P Hartlage
Wesley W Zhang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE137606T1 publication Critical patent/ATE137606T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Lasers (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
AT89113700T 1988-07-28 1989-07-25 Laserinterferometersystem zum überwachen und regeln der bearbeitung von integrierten schaltungen ATE137606T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/225,158 US4927485A (en) 1988-07-28 1988-07-28 Laser interferometer system for monitoring and controlling IC processing

Publications (1)

Publication Number Publication Date
ATE137606T1 true ATE137606T1 (de) 1996-05-15

Family

ID=22843767

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89113700T ATE137606T1 (de) 1988-07-28 1989-07-25 Laserinterferometersystem zum überwachen und regeln der bearbeitung von integrierten schaltungen

Country Status (5)

Country Link
US (1) US4927485A (de)
EP (1) EP0352740B1 (de)
JP (1) JPH076771B2 (de)
AT (1) ATE137606T1 (de)
DE (1) DE68926368T2 (de)

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US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
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US5956142A (en) * 1997-09-25 1999-09-21 Siemens Aktiengesellschaft Method of end point detection using a sinusoidal interference signal for a wet etch process
WO1999030109A1 (en) * 1997-12-09 1999-06-17 Advanced Micro Devices, Inc. Endpoint detection method for cmp processes
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US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6074516A (en) * 1998-06-23 2000-06-13 Lam Research Corporation High sputter, etch resistant window for plasma processing chambers
EP1125314A1 (de) 1998-07-10 2001-08-22 Applied Materials, Inc. Verbesserte endpunktbestimmung für einen substratfabrikationsprozess
US6994607B2 (en) * 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
WO2000071971A1 (en) 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses
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US6449038B1 (en) 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
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US6716362B1 (en) * 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
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US6562248B1 (en) * 2001-03-26 2003-05-13 Advanced Micro Devices, Inc. Active control of phase shift mask etching process
US6778268B1 (en) * 2001-10-09 2004-08-17 Advanced Micro Devices, Sinc. System and method for process monitoring of polysilicon etch
US6687014B2 (en) 2002-01-16 2004-02-03 Infineon Technologies Ag Method for monitoring the rate of etching of a semiconductor
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
US6688945B2 (en) * 2002-03-25 2004-02-10 Macronix International Co. Ltd. CMP endpoint detection system
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US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
JP4890746B2 (ja) * 2004-06-14 2012-03-07 株式会社ディスコ ウエーハの加工方法
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DE102006016132A1 (de) * 2005-09-22 2007-03-29 Robert Bosch Gmbh Interferometrische Messvorrichtung
DE102006016131A1 (de) * 2005-09-22 2007-03-29 Robert Bosch Gmbh Interferometrische Messvorrichtung
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
US20090305610A1 (en) * 2008-06-06 2009-12-10 Applied Materials, Inc. Multiple window pad assembly
CN101393015B (zh) * 2008-10-17 2010-06-16 华中科技大学 一种微纳深沟槽结构在线测量方法及装置
BE1025292B1 (nl) * 2017-06-06 2019-01-15 Layerwise N.V. Apparaat voor het additief vervaardigen van een product met een kalibratie-inrichting en werkwijze voor het kalibreren van een dergelijk apparaat
CN108548498A (zh) * 2018-05-25 2018-09-18 Oppo广东移动通信有限公司 激光投射模组、深度相机和电子装置
CN110531562A (zh) * 2018-05-25 2019-12-03 Oppo广东移动通信有限公司 激光投射模组、深度相机和电子装置
JP7624321B2 (ja) * 2021-02-15 2025-01-30 芝浦メカトロニクス株式会社 プラズマ処理装置
US12576475B2 (en) 2023-04-25 2026-03-17 Applied Materials, Inc. Determining the orientation of a substrate in-situ

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JPS60127403A (ja) * 1983-12-13 1985-07-08 Anritsu Corp 厚み測定装置
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JPS60218006A (ja) * 1984-04-13 1985-10-31 Nippon Telegr & Teleph Corp <Ntt> 微小すきま測定器

Also Published As

Publication number Publication date
US4927485A (en) 1990-05-22
EP0352740B1 (de) 1996-05-01
DE68926368D1 (de) 1996-06-05
JPH076771B2 (ja) 1995-01-30
DE68926368T2 (de) 1996-11-28
EP0352740A2 (de) 1990-01-31
JPH02196906A (ja) 1990-08-03
EP0352740A3 (de) 1992-01-29

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