ATE141008T1 - Betatigungseinheiten und mikrosensoren in soi- technik - Google Patents
Betatigungseinheiten und mikrosensoren in soi- technikInfo
- Publication number
- ATE141008T1 ATE141008T1 AT93907203T AT93907203T ATE141008T1 AT E141008 T1 ATE141008 T1 AT E141008T1 AT 93907203 T AT93907203 T AT 93907203T AT 93907203 T AT93907203 T AT 93907203T AT E141008 T1 ATE141008 T1 AT E141008T1
- Authority
- AT
- Austria
- Prior art keywords
- diaphragm
- microsensors
- actuating units
- soi technology
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/847,690 US5177661A (en) | 1989-01-13 | 1992-03-06 | SOI diaphgram sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE141008T1 true ATE141008T1 (de) | 1996-08-15 |
Family
ID=25301252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT93907203T ATE141008T1 (de) | 1992-03-06 | 1993-03-05 | Betatigungseinheiten und mikrosensoren in soi- technik |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5177661A (de) |
| EP (1) | EP0629286B1 (de) |
| JP (1) | JPH07504509A (de) |
| AT (1) | ATE141008T1 (de) |
| CA (1) | CA2130677A1 (de) |
| DE (1) | DE69303893T2 (de) |
| WO (1) | WO1993018382A1 (de) |
Families Citing this family (96)
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| US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5767405A (en) | 1992-04-07 | 1998-06-16 | The Charles Stark Draper Laboratory, Inc. | Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout |
| JP2769661B2 (ja) * | 1992-09-29 | 1998-06-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
| US7073254B2 (en) * | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
| US20020053734A1 (en) * | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
| US20030199179A1 (en) * | 1993-11-16 | 2003-10-23 | Formfactor, Inc. | Contact tip structure for microelectronic interconnection elements and method of making same |
| SE9304145D0 (sv) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Sätt att tillverka hålrumsstrukturer |
| US5415726A (en) * | 1993-12-21 | 1995-05-16 | Delco Electronics Corporation | Method of making a bridge-supported accelerometer structure |
| KR0132490B1 (ko) * | 1994-07-21 | 1998-04-16 | 문정환 | 박막트랜지스터 제조방법 |
| US5646348A (en) | 1994-08-29 | 1997-07-08 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode and fabrication technique therefor |
| US5581035A (en) | 1994-08-29 | 1996-12-03 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode |
| US5894452A (en) * | 1994-10-21 | 1999-04-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated ultrasonic immersion transducer |
| FI100918B (fi) * | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
| JPH08274350A (ja) * | 1995-03-29 | 1996-10-18 | Yokogawa Electric Corp | 半導体圧力センサ及びその製造方法 |
| US5578528A (en) * | 1995-05-02 | 1996-11-26 | Industrial Technology Research Institute | Method of fabrication glass diaphragm on silicon macrostructure |
| US5567332A (en) * | 1995-06-09 | 1996-10-22 | Fsi International | Micro-machine manufacturing process |
| FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
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| US8033838B2 (en) * | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
| JP2001511884A (ja) * | 1996-07-10 | 2001-08-14 | ハネウェル データ インスツルメンツ インコーポレイテッド | 誤差補償を有する圧力変換器 |
| EP0890998A1 (de) * | 1997-07-07 | 1999-01-13 | STMicroelectronics S.r.l. | Herstellungsverfahren und integrierter piezoresistiver Drucksensor mit einem Diaphragma aus polykristallinem Halbleitermaterial |
| US6472244B1 (en) | 1996-07-31 | 2002-10-29 | Sgs-Thomson Microelectronics S.R.L. | Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material |
| DE19648424C1 (de) * | 1996-11-22 | 1998-06-25 | Siemens Ag | Mikromechanischer Sensor |
| SG86994A1 (en) * | 1997-07-11 | 2002-03-19 | Inst Of Microelectronics Nat U | Method of fabricating a silicon microphone |
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| US5982709A (en) * | 1998-03-31 | 1999-11-09 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic transducers and method of microfabrication |
| JP2002525213A (ja) | 1998-08-27 | 2002-08-13 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 閉鎖されたダイヤフラム開口を有するマイクロメカニズムの構成部材 |
| DE19839606C1 (de) | 1998-08-31 | 2000-04-27 | Siemens Ag | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
| USRE38437E1 (en) | 1998-12-01 | 2004-02-24 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
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| WO2000036387A1 (de) * | 1998-12-15 | 2000-06-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum erzeugen eines mikro-elektromechanischen elements |
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| US6232139B1 (en) * | 1999-01-29 | 2001-05-15 | Sandia Corporation | Method of making suspended thin-film semiconductor piezoelectric devices |
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| US11674803B2 (en) | 2014-06-02 | 2023-06-13 | Motion Engine, Inc. | Multi-mass MEMS motion sensor |
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| AU2016258317B2 (en) | 2015-05-07 | 2020-04-23 | Vectorious Medical Technologies Ltd | Deploying and fixating an implant across an organ wall |
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| EP3258235A1 (de) | 2016-06-16 | 2017-12-20 | Huba Control Ag | Differenzialdruckwandler |
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| CN108862186B (zh) * | 2018-07-13 | 2021-07-06 | 河南汇纳科技有限公司 | 一种多传感器的协同制造工艺流程 |
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| EP3748323B1 (de) | 2019-06-03 | 2022-01-12 | Huba Control Ag | Differenzdrucksensor |
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| US4982351A (en) * | 1986-05-05 | 1991-01-01 | Texas Instruments Incorporated | Low cost high precision sensor |
| JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
| GB2198610B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of producing a diaphragm on a substrate |
| GB2198611B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of forming a sealed diaphragm on a substrate |
| JP2508070B2 (ja) * | 1987-04-08 | 1996-06-19 | 日本電装株式会社 | 圧力検出素子及びその製造方法 |
| US4812801A (en) * | 1987-05-14 | 1989-03-14 | The United States Of America As Represented By The Secretary Of The Air Force | Solid state gas pressure sensor |
| JPH0797642B2 (ja) * | 1987-05-15 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
| JPH01136378A (ja) * | 1987-11-24 | 1989-05-29 | Nissan Motor Co Ltd | 圧力変換装置の製造方法 |
| US4783821A (en) * | 1987-11-25 | 1988-11-08 | The Regents Of The University Of California | IC processed piezoelectric microphone |
| US4816125A (en) * | 1987-11-25 | 1989-03-28 | The Regents Of The University Of California | IC processed piezoelectric microphone |
| JPH01145872A (ja) * | 1987-12-02 | 1989-06-07 | Yokogawa Electric Corp | 半導体圧力センサの製造方法 |
| US4904978A (en) * | 1988-04-29 | 1990-02-27 | Solartron Electronics, Inc. | Mechanical sensor for high temperature environments |
| US4808549A (en) * | 1988-05-27 | 1989-02-28 | Ford Motor Company | Method for fabricating a silicon force transducer |
| US4849070A (en) * | 1988-09-14 | 1989-07-18 | The United States Of America As Represented By The Secretary Of The Army | Process for fabricating three-dimensional, free-standing microstructures |
| US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5258097A (en) * | 1992-11-12 | 1993-11-02 | Ford Motor Company | Dry-release method for sacrificial layer microstructure fabrication |
-
1992
- 1992-03-06 US US07/847,690 patent/US5177661A/en not_active Expired - Lifetime
- 1992-12-18 US US07/993,096 patent/US5493470A/en not_active Expired - Lifetime
-
1993
- 1993-03-05 CA CA002130677A patent/CA2130677A1/en not_active Abandoned
- 1993-03-05 JP JP5515882A patent/JPH07504509A/ja active Pending
- 1993-03-05 EP EP93907203A patent/EP0629286B1/de not_active Expired - Lifetime
- 1993-03-05 DE DE69303893T patent/DE69303893T2/de not_active Expired - Fee Related
- 1993-03-05 WO PCT/US1993/001952 patent/WO1993018382A1/en not_active Ceased
- 1993-03-05 AT AT93907203T patent/ATE141008T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993018382A1 (en) | 1993-09-16 |
| EP0629286B1 (de) | 1996-07-31 |
| DE69303893T2 (de) | 1996-11-28 |
| DE69303893D1 (de) | 1996-09-05 |
| CA2130677A1 (en) | 1993-09-07 |
| US5177661A (en) | 1993-01-05 |
| EP0629286A1 (de) | 1994-12-21 |
| JPH07504509A (ja) | 1995-05-18 |
| US5493470A (en) | 1996-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |