ATE141715T1 - Verfahren zur herstellung eines dünnfilmtransistors - Google Patents

Verfahren zur herstellung eines dünnfilmtransistors

Info

Publication number
ATE141715T1
ATE141715T1 AT89201379T AT89201379T ATE141715T1 AT E141715 T1 ATE141715 T1 AT E141715T1 AT 89201379 T AT89201379 T AT 89201379T AT 89201379 T AT89201379 T AT 89201379T AT E141715 T1 ATE141715 T1 AT E141715T1
Authority
AT
Austria
Prior art keywords
thin film
source
onto
regions
drain
Prior art date
Application number
AT89201379T
Other languages
English (en)
Inventor
Kazuhiro Kobayashi
Kris August Emilia Ferdi Baert
Johan Francis Albert Nijs
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE141715T1 publication Critical patent/ATE141715T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
AT89201379T 1988-05-30 1989-05-30 Verfahren zur herstellung eines dünnfilmtransistors ATE141715T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8801379A NL8801379A (nl) 1988-05-30 1988-05-30 Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.

Publications (1)

Publication Number Publication Date
ATE141715T1 true ATE141715T1 (de) 1996-09-15

Family

ID=19852371

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89201379T ATE141715T1 (de) 1988-05-30 1989-05-30 Verfahren zur herstellung eines dünnfilmtransistors

Country Status (8)

Country Link
US (1) US5102813A (de)
EP (1) EP0344863B1 (de)
JP (1) JPH02177368A (de)
KR (1) KR0183964B1 (de)
AT (1) ATE141715T1 (de)
CA (1) CA1318417C (de)
DE (1) DE68926980T2 (de)
NL (1) NL8801379A (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691249A (en) * 1990-03-20 1997-11-25 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
US5318919A (en) * 1990-07-31 1994-06-07 Sanyo Electric Co., Ltd. Manufacturing method of thin film transistor
US5403760A (en) * 1990-10-16 1995-04-04 Texas Instruments Incorporated Method of making a HgCdTe thin film transistor
EP0486047B1 (de) * 1990-11-16 1999-09-01 Seiko Epson Corporation Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
US5424230A (en) * 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
US5409851A (en) * 1992-05-04 1995-04-25 Goldstar Co., Ltd. Method of making a thin film transistor
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
CN1881620B (zh) * 1993-10-01 2010-06-23 株式会社半导体能源研究所 半导体器件及其制造方法
DE4435461C2 (de) * 1993-10-06 2001-09-20 Micron Technology Inc N D Ges Dünnfilmtransistor und dessen Herstellverfahren
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP3440291B2 (ja) * 1995-05-25 2003-08-25 独立行政法人産業技術総合研究所 微結晶シリコン薄膜トランジスタ
JP3416723B2 (ja) * 1995-05-25 2003-06-16 独立行政法人産業技術総合研究所 非晶質シリコン薄膜トランジスタ及びその製法
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
GB9817745D0 (en) * 1998-08-15 1998-10-14 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
US7402467B1 (en) 1999-03-26 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
DE19935046C2 (de) * 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
DE10052131C2 (de) * 2000-10-20 2003-02-13 Advanced Micro Devices Inc Verfahren zur Herstellung von Feldeffekttransistoren mit einer vollständig selbstjustierenden Technologie
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) * 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP5594773B2 (ja) * 2010-09-30 2014-09-24 国立大学法人九州大学 選択成膜方法、成膜装置、及び構造体

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
US4523214A (en) * 1981-07-03 1985-06-11 Fuji Photo Film Co., Ltd. Solid state image pickup device utilizing microcrystalline and amorphous silicon
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
JPS58219732A (ja) * 1982-06-16 1983-12-21 Tokyo Inst Of Technol フツ素含有アモルフアス半導体の製造方法
US4737379A (en) * 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JPS62271418A (ja) * 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
GB2215126B (en) * 1988-02-19 1990-11-14 Gen Electric Co Plc Process for manufacturing a thin film transistor

Also Published As

Publication number Publication date
EP0344863A1 (de) 1989-12-06
JPH02177368A (ja) 1990-07-10
KR0183964B1 (ko) 1999-03-20
DE68926980D1 (de) 1996-09-26
CA1318417C (en) 1993-05-25
US5102813A (en) 1992-04-07
KR900019245A (ko) 1990-12-24
DE68926980T2 (de) 1997-01-16
EP0344863B1 (de) 1996-08-21
NL8801379A (nl) 1989-12-18

Similar Documents

Publication Publication Date Title
ATE141715T1 (de) Verfahren zur herstellung eines dünnfilmtransistors
KR970007965B1 (en) Structure and fabrication method of tft
GB1477083A (en) Insulated gate field effect transistors
KR890012402A (ko) 반도체 장치의 제조방법
JPS6435948A (en) Static ram cell equipped with trench structure pull-down transistor and buried layer grounding plate
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS6433973A (en) Method of evaporating amorphous silicon for forming intermediate level dielectric of semiconductor memory device
DE3751892D1 (de) Halbleiteranordnung mit zwei Verbindungshalbleitern und Verfahren zu ihrer Herstellung
EP0077737A3 (de) Feldeffekttransistor mit kleiner Kapazität
EP0233791A3 (de) Isolierter Gatter-Feldeffekttransistor und dessen Herstellungsverfahren
KR940004852A (ko) 모스트랜지스터 구조 및 제조방법
JPS5633881A (en) Manufacture of semiconductor device
EP0436038A4 (en) Semiconductor device and method of producing the same
KR960043091A (ko) 반도체장치의 제조방법
DE3750300D1 (de) Photoelektrisches Umwandlungselement und Verfahren zu seiner Herstellung.
JPS57141966A (en) Manufacture of semiconductor device
KR920018973A (ko) 리세스드 채널 모오스 fet 제조방법 및 구조
JPS5636165A (en) Insulated gate type field-effect transistor
JPS54155784A (en) Manufacture of semiconductor integrated-circuit device
KR940001455A (ko) 다결정 실리콘 박막트랜지스터의 제조방법
KR970003682A (ko) 저도핑 드레인 구조의 모스 트랜지스터 제조 방법
JPS5586162A (en) Device and manufacturing method for insulating substrate type semiconductor
KR940016891A (ko) 트랜지스터 및 이의 제조방법
JPS5376770A (en) Production of insulated gate field effect transistor
KR940012653A (ko) 박막트랜지스터 제조방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties