ATE143531T1 - HALL EFFECT PROBE - Google Patents

HALL EFFECT PROBE

Info

Publication number
ATE143531T1
ATE143531T1 AT93401267T AT93401267T ATE143531T1 AT E143531 T1 ATE143531 T1 AT E143531T1 AT 93401267 T AT93401267 T AT 93401267T AT 93401267 T AT93401267 T AT 93401267T AT E143531 T1 ATE143531 T1 AT E143531T1
Authority
AT
Austria
Prior art keywords
carrier
layer
quantum well
less
well structure
Prior art date
Application number
AT93401267T
Other languages
German (de)
Inventor
Vincent Mosser
Jean-Louis Robert
Original Assignee
Schlumberger Ind Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Ind Sa filed Critical Schlumberger Ind Sa
Application granted granted Critical
Publication of ATE143531T1 publication Critical patent/ATE143531T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Push-Button Switches (AREA)

Abstract

Hall-effect sensor of the type with two-dimensional electron gas and comprising, on an insulating substrate (10), a quantum well structure (12), a carrier-yielding layer (20) adjacent to the quantum well structure (12), less than 250 angstroms thick and having a surface density of donors, when integrated through the whole thickness of the carrier-yielding layer, of less than 5 10<12>cm<-2>, an insulating disposal layer (22) deposited on the carrier-yielding layer, having a conduction band of energy greater than the Fermi energy of the sensor and greater than 200 angstroms thick. Application to the field of electrical counters and current sensors. <IMAGE>
AT93401267T 1992-05-27 1993-05-18 HALL EFFECT PROBE ATE143531T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR929206517A FR2691839B1 (en) 1992-05-27 1992-05-27 HALL EFFECT SENSOR.

Publications (1)

Publication Number Publication Date
ATE143531T1 true ATE143531T1 (en) 1996-10-15

Family

ID=9430250

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93401267T ATE143531T1 (en) 1992-05-27 1993-05-18 HALL EFFECT PROBE

Country Status (7)

Country Link
US (1) US5442221A (en)
EP (1) EP0572298B1 (en)
AT (1) ATE143531T1 (en)
CA (1) CA2095964C (en)
DE (1) DE69304995T2 (en)
ES (1) ES2092247T3 (en)
FR (1) FR2691839B1 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US8280682B2 (en) 2000-12-15 2012-10-02 Tvipr, Llc Device for monitoring movement of shipped goods
US6266623B1 (en) 1994-11-21 2001-07-24 Phatrat Technology, Inc. Sport monitoring apparatus for determining loft time, speed, power absorbed and other factors such as height
US7386401B2 (en) 1994-11-21 2008-06-10 Phatrat Technology, Llc Helmet that reports impact information, and associated methods
FR2749695B1 (en) * 1996-06-06 1998-07-24 Silmag Sa MAGNETIC WRITING AND READING HEAD WITH SEMICONDUCTOR FIELD DETECTOR
US5831513A (en) * 1997-02-04 1998-11-03 United Microelectronics Corp. Magnetic field sensing device
FR2768263B1 (en) * 1997-09-09 1999-12-03 Thomson Csf HALL EFFECT SENSOR
US6320403B1 (en) 1998-08-10 2001-11-20 Advanced Micro Devices, Inc. Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
US6147507A (en) * 1998-08-10 2000-11-14 Advanced Micro Devices, Inc. System and method of mapping leakage current and a defect profile of a semiconductor dielectric layer
US6208154B1 (en) 1998-08-10 2001-03-27 Advanced Micro Devices, Inc. Method of determining the doping concentration across a surface of a semiconductor material
US7171331B2 (en) 2001-12-17 2007-01-30 Phatrat Technology, Llc Shoes employing monitoring devices, and associated methods
US20040061493A1 (en) * 2001-09-25 2004-04-01 Keith Fishburn Tone wheel
US6642709B2 (en) 2001-10-17 2003-11-04 A.J. Rose Manufacturing Co. Signal wheel for generating rotational position signal
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
US9081041B2 (en) * 2012-04-04 2015-07-14 Allegro Microsystems, Llc High accuracy differential current sensor for applications like ground fault interrupters
US9007054B2 (en) 2012-04-04 2015-04-14 Allegro Microsystems, Llc Angle sensor with misalignment detection and correction
US8896295B2 (en) 2012-04-04 2014-11-25 Allegro Microsystems, Llc Magnetic field sensor having multiple sensing elements and a programmable misalignment adjustment device for misalignment detection and correction in current sensing and other applications
US9640389B2 (en) 2014-06-17 2017-05-02 Brolis Semiconductors Ltd. High-mobility semiconductor heterostructures
US11896373B2 (en) 2017-05-22 2024-02-13 Brolis Sensor Technology, Uab Tunable hybrid III-V/ IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level
DE102017217285A1 (en) * 2017-09-28 2019-03-28 Robert Bosch Gmbh Layer composite for the electrostatic doping of a two-dimensional doping layer, Hall sensor and method and apparatus for producing such a layer composite
CA3089801C (en) 2018-02-02 2024-10-08 Brolis Sensor Technology, Uab Wavelength determination for widely tunable lasers and laser systems thereof
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
KR102868049B1 (en) * 2020-02-03 2025-10-01 삼성전자주식회사 Infrared detecting device and infrared detecting system including the same
EP3866215A1 (en) * 2020-02-14 2021-08-18 Melexis Technologies SA Semiconductor stack for hall effect device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06105802B2 (en) * 1984-07-09 1994-12-21 旭化成工業株式会社 Magnetoelectric conversion element
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
DE3676019D1 (en) * 1985-09-03 1991-01-17 Daido Steel Co Ltd EPITACTIC GALLIUM ARSENIDE SEMICONDUCTOR DISC AND METHOD FOR THEIR PRODUCTION.
JPS6293989A (en) * 1985-10-21 1987-04-30 Hitachi Ltd Hall element
JP2557373B2 (en) * 1986-04-05 1996-11-27 住友電気工業株式会社 Compound semiconductor device
JPS6354785A (en) * 1986-08-25 1988-03-09 Agency Of Ind Science & Technol Hetero-junction magnetic sensor
EP0314836A1 (en) * 1987-11-06 1989-05-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor device in particular a hot electron transistor
JPH01125003A (en) * 1987-06-24 1989-05-17 Yagi Antenna Co Ltd Yagi antenna reflector
US4912451A (en) * 1988-03-28 1990-03-27 Nippon Soken, Inc. Heterojunction magnetic field sensor
JP2553731B2 (en) * 1990-04-13 1996-11-13 三菱電機株式会社 Semiconductor optical device
FR2679071B1 (en) * 1991-07-08 1997-04-11 France Telecom FIELD EFFECT TRANSISTOR WITH THIN FILMS OF CONTROLLED ENERGY STRIP.

Also Published As

Publication number Publication date
DE69304995D1 (en) 1996-10-31
FR2691839B1 (en) 1994-08-05
EP0572298B1 (en) 1996-09-25
FR2691839A1 (en) 1993-12-03
CA2095964A1 (en) 1993-11-28
CA2095964C (en) 2003-10-14
ES2092247T3 (en) 1996-11-16
DE69304995T2 (en) 1997-02-06
EP0572298A1 (en) 1993-12-01
US5442221A (en) 1995-08-15

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EEIH Change in the person of patent owner
REN Ceased due to non-payment of the annual fee