ATE149685T1 - Mikroverschiebungselement für ein tunnelrastermikroskop - Google Patents

Mikroverschiebungselement für ein tunnelrastermikroskop

Info

Publication number
ATE149685T1
ATE149685T1 AT92304772T AT92304772T ATE149685T1 AT E149685 T1 ATE149685 T1 AT E149685T1 AT 92304772 T AT92304772 T AT 92304772T AT 92304772 T AT92304772 T AT 92304772T AT E149685 T1 ATE149685 T1 AT E149685T1
Authority
AT
Austria
Prior art keywords
thin film
microshift
scanning microscope
micro
tunnel scanning
Prior art date
Application number
AT92304772T
Other languages
English (en)
Inventor
Keisuke Yamamoto
Yutaka Hirai
Masaru Nakayama
Takayuki Yagi
Yuji Kasanuki
Yoshio Suzuki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE149685T1 publication Critical patent/ATE149685T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
    • G01Q10/04—Fine scanning or positioning
    • G01Q10/045—Self-actuating probes, i.e. wherein the actuating means for driving are part of the probe itself, e.g. piezoelectric means on a cantilever probe
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/06—Probe tip arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/837—Piezoelectric property of nanomaterial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/872—Positioner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Micromachines (AREA)
AT92304772T 1991-05-28 1992-05-27 Mikroverschiebungselement für ein tunnelrastermikroskop ATE149685T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15094291 1991-05-28
JP15125592A JP3198355B2 (ja) 1991-05-28 1992-05-20 微小変位素子及びこれを用いた走査型トンネル顕微鏡、情報処理装置

Publications (1)

Publication Number Publication Date
ATE149685T1 true ATE149685T1 (de) 1997-03-15

Family

ID=26480370

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92304772T ATE149685T1 (de) 1991-05-28 1992-05-27 Mikroverschiebungselement für ein tunnelrastermikroskop

Country Status (6)

Country Link
US (1) US5268571A (de)
EP (1) EP0516380B1 (de)
JP (1) JP3198355B2 (de)
AT (1) ATE149685T1 (de)
CA (1) CA2069702C (de)
DE (1) DE69217721T2 (de)

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US5481184A (en) * 1991-12-31 1996-01-02 Sarcos Group Movement actuator/sensor systems
JP3261544B2 (ja) * 1991-10-03 2002-03-04 キヤノン株式会社 カンチレバー駆動機構の製造方法、プローブ駆動機構の製造方法、カンチレバー駆動機構、プローブ駆動機構、及びこれを用いたマルチプローブ駆動機構、走査型トンネル顕微鏡、情報処理装置
JPH06132579A (ja) * 1992-09-01 1994-05-13 Canon Inc 変位素子及びそれを用いたプローブ、同プローブを有する機器
US5338932A (en) * 1993-01-04 1994-08-16 Motorola, Inc. Method and apparatus for measuring the topography of a semiconductor device
JPH06241777A (ja) * 1993-02-16 1994-09-02 Mitsubishi Electric Corp 原子間力顕微鏡用カンチレバー、その製造方法、このカンチレバーを用いた原子間力顕微鏡及びこのカンチレバーを用いた試料表面密着性評価方法
US5689063A (en) * 1993-07-15 1997-11-18 Nikon Corporation Atomic force microscope using cantilever attached to optical microscope
US5537863A (en) * 1993-07-15 1996-07-23 Nikon Corporation Scanning probe microscope having a cantilever used therein
US5475318A (en) * 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US5679889A (en) * 1995-02-06 1997-10-21 Nikon Corporation Method for extracting electrode and cantilever for AFM using said method for extracting electrode
JP3581421B2 (ja) * 1995-02-23 2004-10-27 キヤノン株式会社 情報処理装置
JPH08297129A (ja) * 1995-04-26 1996-11-12 Nikon Corp 原子間力顕微鏡用カンチレバー及びその製造方法
DE19520796A1 (de) * 1995-06-07 1996-12-12 Siemens Ag Piezoelektrischer Biegewandler
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
MY140241A (en) * 2000-02-01 2009-12-31 Panasonic Corp Head support mechanism and thin film piezoelectric actuator.
US6887873B2 (en) 2001-03-23 2005-05-03 Aventis Pharma S.A. Triazine derivatives and their application as antitelomerase agents
US6912778B2 (en) 2001-07-19 2005-07-05 Micron Technology, Inc. Methods of fabricating full-wafer silicon probe cards for burn-in and testing of semiconductor devices
WO2003049209A1 (en) * 2001-11-21 2003-06-12 Apogent Robotics Limited Actuator structure
KR100746768B1 (ko) * 2002-03-19 2007-08-06 주식회사 엘지이아이 캔틸레버를 이용한 정보 기록 및 판독 장치
US7063909B2 (en) * 2002-08-14 2006-06-20 Hewlett-Packard Development Company, L.P. Fuel-cell element stack with stress relief and methods
JP4329322B2 (ja) * 2002-10-04 2009-09-09 ソニー株式会社 相互反応作用検出方法及びバイオアッセイ装置、並びにバイオアッセイ用基板
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US7055378B2 (en) 2003-08-11 2006-06-06 Veeco Instruments, Inc. System for wide frequency dynamic nanomechanical analysis
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
JP4316590B2 (ja) 2006-06-23 2009-08-19 株式会社東芝 圧電駆動型ｍｅｍｓアクチュエータ
KR100790893B1 (ko) * 2006-10-20 2008-01-03 삼성전자주식회사 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
EP2288179B1 (de) 2008-05-29 2015-09-30 Murata Manufacturing Co., Ltd. Piezoelektrischer lautsprecher, lautsprechervorrichtung und taktile rückkoppelungsvorrichtung
CN102047459B (zh) 2008-05-29 2013-10-16 株式会社村田制作所 片材型振动体以及音响设备
JP5609244B2 (ja) * 2010-04-28 2014-10-22 パナソニック株式会社 振動発電デバイス
CN102064745B (zh) * 2010-11-15 2013-07-31 中国人民解放军国防科学技术大学 一种双稳压电悬臂梁振子装置
FR3022690B1 (fr) * 2014-06-24 2016-07-22 Commissariat Energie Atomique Dispositif de connexion electrique comportant des elements de connexion a position commandable

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DE3572030D1 (en) * 1985-03-07 1989-09-07 Ibm Scanning tunneling microscope
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Also Published As

Publication number Publication date
EP0516380A2 (de) 1992-12-02
DE69217721T2 (de) 1997-07-17
CA2069702A1 (en) 1992-11-29
US5268571A (en) 1993-12-07
DE69217721D1 (de) 1997-04-10
CA2069702C (en) 1999-01-19
JPH05347439A (ja) 1993-12-27
EP0516380B1 (de) 1997-03-05
EP0516380A3 (en) 1993-06-16
JP3198355B2 (ja) 2001-08-13

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