ATE149700T1 - Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung - Google Patents

Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung

Info

Publication number
ATE149700T1
ATE149700T1 AT93913544T AT93913544T ATE149700T1 AT E149700 T1 ATE149700 T1 AT E149700T1 AT 93913544 T AT93913544 T AT 93913544T AT 93913544 T AT93913544 T AT 93913544T AT E149700 T1 ATE149700 T1 AT E149700T1
Authority
AT
Austria
Prior art keywords
receiving layer
monocrytalline
silicon
column
production
Prior art date
Application number
AT93913544T
Other languages
English (en)
Inventor
Tetsuya Takei
Hirokazu Ohtoshi
Takehito Yoshino
Ryuji Okamura
Yasuyoshi Takai
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE149700T1 publication Critical patent/ATE149700T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
AT93913544T 1992-06-18 1993-06-18 Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung ATE149700T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18286392 1992-06-18

Publications (1)

Publication Number Publication Date
ATE149700T1 true ATE149700T1 (de) 1997-03-15

Family

ID=16125764

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93913544T ATE149700T1 (de) 1992-06-18 1993-06-18 Bildempfangsschicht bestehend aus nicht- monokristallinem silizium sowie aus säulenförmigen structurbereichen und dessen verfahren zur herstellung

Country Status (5)

Country Link
US (1) US5624776A (de)
EP (1) EP0618508B1 (de)
AT (1) ATE149700T1 (de)
DE (1) DE69308535T2 (de)
WO (1) WO1993025940A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238832B1 (en) * 1997-12-25 2001-05-29 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE60229461D1 (de) * 2001-04-24 2008-12-04 Canon Kk Negativ-aufladbares elektrophotographisches Element
JP3913123B2 (ja) * 2001-06-28 2007-05-09 キヤノン株式会社 電子写真感光体の製造方法
JP4546055B2 (ja) * 2002-09-24 2010-09-15 キヤノン株式会社 クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法
US6893476B2 (en) * 2002-12-09 2005-05-17 Dupont Air Products Nanomaterials Llc Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
WO2010010971A1 (en) * 2008-07-25 2010-01-28 Canon Kabushiki Kaisha Image-forming method and image-forming apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269919A (en) * 1976-07-13 1981-05-26 Coulter Systems Corporation Inorganic photoconductive coating, electrophotographic member and sputtering method of making the same
JPS587149A (ja) * 1981-07-03 1983-01-14 Fuji Photo Film Co Ltd 光導電感光体
JPS60140353A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 電子写真感光体
JPS6156351A (ja) * 1984-08-28 1986-03-22 Konishiroku Photo Ind Co Ltd 感光体
JP2505732B2 (ja) * 1985-02-05 1996-06-12 キヤノン株式会社 堆積膜形成法
JPS61232466A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 電子写真感光体の製造方法
JPS6373263A (ja) * 1986-09-17 1988-04-02 Toshiba Corp 電子写真感光体
US4789646A (en) * 1987-07-20 1988-12-06 North American Philips Corporation, Signetics Division Company Method for selective surface treatment of semiconductor structures
JPS6462660A (en) * 1987-09-02 1989-03-09 Toshiba Corp Electrophotographic sensitive body
DE3927353A1 (de) * 1988-08-18 1990-05-17 Canon Kk Elektrophotographisches bildformierungsmaterial mit photoleitfaehiger schicht, die nichteinkristall-siliziumcarbid aufweist
JP2867150B2 (ja) * 1988-11-15 1999-03-08 キヤノン株式会社 マイクロ波プラズマｃｖｄ装置
JP2907438B2 (ja) * 1989-03-17 1999-06-21 大日本印刷株式会社 静電印刷方法
JP2811108B2 (ja) * 1990-03-14 1998-10-15 コニカ株式会社 電子写真感光体
JP2962851B2 (ja) * 1990-04-26 1999-10-12 キヤノン株式会社 光受容部材
JPH0553355A (ja) * 1991-08-28 1993-03-05 Canon Inc 電子写真感光体及びその製造方法

Also Published As

Publication number Publication date
DE69308535T2 (de) 1997-09-18
US5624776A (en) 1997-04-29
EP0618508A1 (de) 1994-10-05
EP0618508B1 (de) 1997-03-05
EP0618508A4 (de) 1994-12-07
WO1993025940A1 (fr) 1993-12-23
DE69308535D1 (de) 1997-04-10

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Legal Events

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