JPS6462660A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS6462660A JPS6462660A JP21993087A JP21993087A JPS6462660A JP S6462660 A JPS6462660 A JP S6462660A JP 21993087 A JP21993087 A JP 21993087A JP 21993087 A JP21993087 A JP 21993087A JP S6462660 A JPS6462660 A JP S6462660A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- enhanced
- electrophotographic sensitive
- sensitive body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08264—Silicon-based comprising seven or more silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain a photosensitive body enhanced in transferability of carriers, not reduced in that in the case of enlarging film thickness and not shortened in life and good in acceptance potential by using superlattice structure formed by laminating thin films different in optical band gap from each other for a barrier layer. CONSTITUTION:The electrophotographic sensitive body formed by laminating on a conductive substrate 1 the barrier layer 2 and a photoconductive layer 3, and the barrier layer 2 is formed by alternately laminating amorphous silicon thin films containing at least one of C, O and N, and thin semiconductor films composed essentially of silicon and at least one part of each layer microcrystallized in a crystallization degree changed in the layer thickness direction in each layer, thus permitting carriers generated in this region to be extended in life and enhanced in transferability by the superlattice structure of the barrier layer 2, and consequently, the electrophotographic sensitive body to be remarkably enhanced in sensitivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21993087A JPS6462660A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21993087A JPS6462660A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6462660A true JPS6462660A (en) | 1989-03-09 |
Family
ID=16743247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21993087A Pending JPS6462660A (en) | 1987-09-02 | 1987-09-02 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6462660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993025940A1 (en) * | 1992-06-18 | 1993-12-23 | Canon Kabushiki Kaisha | Electrophotographic photoreceptor provided with light-receiving layer made of non-single crystal silicon and having columnar structure regions, and manufacturing method therefor |
-
1987
- 1987-09-02 JP JP21993087A patent/JPS6462660A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993025940A1 (en) * | 1992-06-18 | 1993-12-23 | Canon Kabushiki Kaisha | Electrophotographic photoreceptor provided with light-receiving layer made of non-single crystal silicon and having columnar structure regions, and manufacturing method therefor |
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