ATE149701T1 - Lichtempfindliches element mit einer amorphen silicium-photoleitfähigen schicht, die fluoratome in einer menge von 1 bis 95 atom-ppm enthält - Google Patents

Lichtempfindliches element mit einer amorphen silicium-photoleitfähigen schicht, die fluoratome in einer menge von 1 bis 95 atom-ppm enthält

Info

Publication number
ATE149701T1
ATE149701T1 AT91303725T AT91303725T ATE149701T1 AT E149701 T1 ATE149701 T1 AT E149701T1 AT 91303725 T AT91303725 T AT 91303725T AT 91303725 T AT91303725 T AT 91303725T AT E149701 T1 ATE149701 T1 AT E149701T1
Authority
AT
Austria
Prior art keywords
atoms
photoconductive layer
fluorate
amount
amorphous silicon
Prior art date
Application number
AT91303725T
Other languages
English (en)
Inventor
Hiroaki Niino
Tetsuya Takei
Ryuji Okamura
Toshiyasu Shirasuna
Shigeru Shirai
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE149701T1 publication Critical patent/ATE149701T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Light Receiving Elements (AREA)
AT91303725T 1990-04-26 1991-04-25 Lichtempfindliches element mit einer amorphen silicium-photoleitfähigen schicht, die fluoratome in einer menge von 1 bis 95 atom-ppm enthält ATE149701T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11088590 1990-04-26
JP11283590 1990-04-27

Publications (1)

Publication Number Publication Date
ATE149701T1 true ATE149701T1 (de) 1997-03-15

Family

ID=26450404

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91303725T ATE149701T1 (de) 1990-04-26 1991-04-25 Lichtempfindliches element mit einer amorphen silicium-photoleitfähigen schicht, die fluoratome in einer menge von 1 bis 95 atom-ppm enthält

Country Status (5)

Country Link
US (1) US5656404A (de)
EP (1) EP0454456B1 (de)
JP (1) JP2962851B2 (de)
AT (1) ATE149701T1 (de)
DE (1) DE69124824T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993025940A1 (fr) * 1992-06-18 1993-12-23 Canon Kabushiki Kaisha Photorecepteur electrophotographique pourvu d'une couche photoreceptrice constituee de silicium non monocristallin et presentant des regions de structure colonnaire, et procede pour sa fabrication
JP3134974B2 (ja) * 1993-03-15 2001-02-13 キヤノン株式会社 電子写真用光受容部材
EP0679955B9 (de) * 1994-04-27 2005-01-12 Canon Kabushiki Kaisha Elektrophotographisches lichtempfindliches Element und seine Herstellung
JP3530676B2 (ja) * 1995-04-26 2004-05-24 キヤノン株式会社 光受容部材の製造方法、該光受容部材、該光受容部材を有する電子写真装置及び該光受容部材を用いた電子写真プロセス
JP3368109B2 (ja) * 1995-08-23 2003-01-20 キヤノン株式会社 電子写真用光受容部材
JP3754751B2 (ja) * 1996-05-23 2006-03-15 キヤノン株式会社 光受容部材
JP3559655B2 (ja) * 1996-08-29 2004-09-02 キヤノン株式会社 電子写真用光受容部材
JPH1090929A (ja) * 1996-09-11 1998-04-10 Canon Inc 電子写真用光受容部材
JPH1165146A (ja) 1997-08-22 1999-03-05 Canon Inc 電子写真用光受容部材
US5900290A (en) * 1998-02-13 1999-05-04 Sharp Microelectronics Technology, Inc. Method of making low-k fluorinated amorphous carbon dielectric
JP3920103B2 (ja) 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
JP2004296558A (ja) * 2003-03-26 2004-10-21 Osaka Prefecture 絶縁層埋め込み型単結晶炭化シリコン基板の製造方法及びその製造装置
JP6128885B2 (ja) 2013-02-22 2017-05-17 キヤノン株式会社 電子写真感光体およびその製造方法ならびに電子写真装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
US4510224A (en) * 1982-05-06 1985-04-09 Konishiroku Photo Industry Co., Ltd. Electrophotographic photoreceptors having amorphous silicon photoconductors
JPS6041046A (ja) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd 電子写真用感光体
US4624905A (en) * 1984-02-14 1986-11-25 Sanyo Electric Co., Ltd. Electrophotographic photosensitive member
DE3511315A1 (de) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial
US4673629A (en) * 1984-12-31 1987-06-16 Konishiroku Photo Industry Co., Ltd. Photoreceptor having amorphous silicon layers
JPS62141784A (ja) * 1985-12-17 1987-06-25 Canon Inc 光導電素子
US4795691A (en) * 1986-04-17 1989-01-03 Canon Kabushiki Kaisha Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

Also Published As

Publication number Publication date
JP2962851B2 (ja) 1999-10-12
JPH04218060A (ja) 1992-08-07
DE69124824D1 (de) 1997-04-10
US5656404A (en) 1997-08-12
DE69124824T2 (de) 1997-07-10
EP0454456B1 (de) 1997-03-05
EP0454456A1 (de) 1991-10-30

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties