ATE154726T1 - Integrierte cmos-schaltung - Google Patents

Integrierte cmos-schaltung

Info

Publication number
ATE154726T1
ATE154726T1 AT93200478T AT93200478T ATE154726T1 AT E154726 T1 ATE154726 T1 AT E154726T1 AT 93200478 T AT93200478 T AT 93200478T AT 93200478 T AT93200478 T AT 93200478T AT E154726 T1 ATE154726 T1 AT E154726T1
Authority
AT
Austria
Prior art keywords
noise
switching
elements
capacitance
routing channels
Prior art date
Application number
AT93200478T
Other languages
English (en)
Inventor
Eino Jacobs
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of ATE154726T1 publication Critical patent/ATE154726T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
AT93200478T 1992-02-27 1993-02-19 Integrierte cmos-schaltung ATE154726T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92200565 1992-02-27

Publications (1)

Publication Number Publication Date
ATE154726T1 true ATE154726T1 (de) 1997-07-15

Family

ID=8210450

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93200478T ATE154726T1 (de) 1992-02-27 1993-02-19 Integrierte cmos-schaltung

Country Status (8)

Country Link
US (1) US5444288A (de)
EP (1) EP0558133B1 (de)
JP (1) JPH06132481A (de)
KR (1) KR930018718A (de)
CN (1) CN1033116C (de)
AT (1) ATE154726T1 (de)
CA (1) CA2090265A1 (de)
DE (1) DE69311596T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656834A (en) * 1994-09-19 1997-08-12 Philips Electronics North America Corporation IC standard cell designed with embedded capacitors
US5887004A (en) * 1997-03-28 1999-03-23 International Business Machines Corporation Isolated scan paths
US6278783B1 (en) 1998-06-03 2001-08-21 Cryptography Research, Inc. Des and other cryptographic, processes with leak minimization for smartcards and other cryptosystems
US7587044B2 (en) 1998-01-02 2009-09-08 Cryptography Research, Inc. Differential power analysis method and apparatus
EP1050133B2 (de) 1998-01-02 2009-05-27 Cryptography Research Inc. Leckresistentes kryptographisches verfahren und vorrichtung
JP4216475B2 (ja) 1998-07-02 2009-01-28 クリプターグラフィー リサーチ インコーポレイテッド 漏洩抵抗力を有する暗号索引付き鍵の更新方法及びデバイス
EP1104938A1 (de) * 1999-12-03 2001-06-06 EM Microelectronic-Marin SA Integrierter Niederleistungsschaltkreis mit Entkopplungskapazitäten
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
JP2002083873A (ja) * 2000-07-14 2002-03-22 Internatl Business Mach Corp <Ibm> 埋め込みデカップリング・キャパシタを有する半導体デバイス
JP3526450B2 (ja) * 2001-10-29 2004-05-17 株式会社東芝 半導体集積回路およびスタンダードセル配置設計方法
JP4205662B2 (ja) * 2004-12-28 2009-01-07 パナソニック株式会社 半導体集積回路の設計方法
US20080043406A1 (en) * 2006-08-16 2008-02-21 Secure Computing Corporation Portable computer security device that includes a clip
US10733352B2 (en) * 2017-11-21 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and layout method for standard cell structures
CN116110882B (zh) * 2023-04-13 2023-09-15 长鑫存储技术有限公司 半导体结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
CA1204511A (en) * 1983-01-28 1986-05-13 Storage Technology Partners Cmos integrated circuit with high frequency power bus arrangement
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
US4833521A (en) * 1983-12-13 1989-05-23 Fairchild Camera & Instrument Corp. Means for reducing signal propagation losses in very large scale integrated circuits
JPS60233838A (ja) * 1984-05-02 1985-11-20 Toshiba Corp 半導体集積回路装置
JPH079977B2 (ja) * 1987-02-10 1995-02-01 株式会社東芝 半導体集積回路装置
JPH02210849A (ja) * 1989-02-09 1990-08-22 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
CA2090265A1 (en) 1993-08-28
EP0558133A1 (de) 1993-09-01
JPH06132481A (ja) 1994-05-13
CN1076549A (zh) 1993-09-22
KR930018718A (ko) 1993-09-22
EP0558133B1 (de) 1997-06-18
CN1033116C (zh) 1996-10-23
DE69311596T2 (de) 1998-01-02
US5444288A (en) 1995-08-22
DE69311596D1 (de) 1997-07-24

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee