ATE176333T1 - Verfahren und apparat zum belasten, einbrennen und reduzieren des leckstromes elektronischer anordnungen unter gebrauch von mikrowellenstrahlung - Google Patents

Verfahren und apparat zum belasten, einbrennen und reduzieren des leckstromes elektronischer anordnungen unter gebrauch von mikrowellenstrahlung

Info

Publication number
ATE176333T1
ATE176333T1 AT93116795T AT93116795T ATE176333T1 AT E176333 T1 ATE176333 T1 AT E176333T1 AT 93116795 T AT93116795 T AT 93116795T AT 93116795 T AT93116795 T AT 93116795T AT E176333 T1 ATE176333 T1 AT E176333T1
Authority
AT
Austria
Prior art keywords
burning
leakage current
reducing
burn
junctions
Prior art date
Application number
AT93116795T
Other languages
English (en)
Inventor
Peter Edward Freiermuth
Kathleen Scott Ginn
Jeffrey Alan Haley
Susan Jarvis Lamaire
David Andrew Lewis
Gavin Terence Mills
Timothy Alvida Redmond
Yuk Lun Tsang
Horn Joseph John Van
Alfred Viehbeck
George Frederick Walker
Jer-Ming Yang
Clarence Sanford Long
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE176333T1 publication Critical patent/ATE176333T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2881—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to environmental aspects other than temperature, e.g. humidity or vibrations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Portable Nailing Machines And Staplers (AREA)
  • Electrodes Of Semiconductors (AREA)
AT93116795T 1992-10-27 1993-10-18 Verfahren und apparat zum belasten, einbrennen und reduzieren des leckstromes elektronischer anordnungen unter gebrauch von mikrowellenstrahlung ATE176333T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/966,960 US5519193A (en) 1992-10-27 1992-10-27 Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation

Publications (1)

Publication Number Publication Date
ATE176333T1 true ATE176333T1 (de) 1999-02-15

Family

ID=25512118

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93116795T ATE176333T1 (de) 1992-10-27 1993-10-18 Verfahren und apparat zum belasten, einbrennen und reduzieren des leckstromes elektronischer anordnungen unter gebrauch von mikrowellenstrahlung

Country Status (7)

Country Link
US (1) US5519193A (de)
EP (1) EP0599046B1 (de)
JP (1) JP2996332B2 (de)
AT (1) ATE176333T1 (de)
CA (1) CA2098416C (de)
DE (1) DE69323270T2 (de)
ES (1) ES2126621T3 (de)

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SA96170106A (ar) 1995-07-06 2005-12-03 أسترا أكتيبولاج مشتقات حامض أميني جديدة
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
US5825785A (en) * 1996-05-24 1998-10-20 Internaitonal Business Machines Corporation Serial input shift register built-in self test circuit for embedded circuits
US5760595A (en) * 1996-09-19 1998-06-02 International Business Machines Corporation High temperature electromigration stress test system, test socket, and use thereof
US5804459A (en) * 1996-11-15 1998-09-08 International Business Machines Corporation Method for charge enhanced defect breakdown to improve yield and reliability
US5954832A (en) * 1997-03-14 1999-09-21 International Business Machines Corporation Method and system for performing non-standard insitu burn-in testings
US6104206A (en) * 1997-08-05 2000-08-15 Verkuil; Roger L. Product wafer junction leakage measurement using corona and a kelvin probe
JPH11295383A (ja) 1998-04-15 1999-10-29 Mitsubishi Electric Corp マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置
US6114181A (en) * 1998-08-05 2000-09-05 International Business Machines Corporation Pre burn-in thermal bump card attach simulation to enhance reliability
RU2157545C1 (ru) * 1999-11-12 2000-10-10 Центральный физико-технический институт Министерства обороны Российской Федерации Способ испытания радиоэлектронной аппаратуры космических аппаратов на стойкость к электростатическим разрядам
US6459293B1 (en) 2000-09-29 2002-10-01 Intel Corporation Multiple parameter testing with improved sensitivity
US6630725B1 (en) 2000-10-06 2003-10-07 Motorola, Inc. Electronic component and method of manufacture
TW478182B (en) * 2000-11-09 2002-03-01 United Epitaxy Co Ltd Fabrication of light-emitting device
US6844747B2 (en) * 2001-03-19 2005-01-18 International Business Machines Corporation Wafer level system for producing burn-in/screen, and reliability evaluations to be performed on all chips simultaneously without any wafer contacting
US6786639B2 (en) * 2002-08-30 2004-09-07 International Business Machines Corporation Device for sensing temperature of an electronic chip
FR2910637B1 (fr) * 2006-12-22 2009-01-23 Peugeot Citroen Automobiles Sa Chauffage par induction pour test de connecteur
US20080172189A1 (en) * 2007-01-16 2008-07-17 Daniel Kadosh Determining Die Health by Expanding Electrical Test Data to Represent Untested Die
US8190391B2 (en) * 2007-03-29 2012-05-29 Globalfoundries Inc. Determining die performance by incorporating neighboring die performance metrics
US20080262769A1 (en) * 2007-04-23 2008-10-23 Daniel Kadosh Using multivariate health metrics to determine market segment and testing requirements
US8041518B2 (en) * 2007-05-08 2011-10-18 Globalfoundries Inc. Determining die test protocols based on process health
JP5297323B2 (ja) * 2009-09-30 2013-09-25 株式会社東芝 半導体装置の製造方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法
US8205173B2 (en) * 2010-06-17 2012-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Physical failure analysis guiding methods
RU2539964C1 (ru) * 2013-08-08 2015-01-27 Федеральное государственное бюджетное учреждение науки Институт сильноточной электроники Сибирского отделения Российской академии наук, (ИСЭ СО РАН) Способ определения стойкости к дугообразованию элементов радиоэлектронной аппаратуры космических аппаратов
RU2644455C1 (ru) * 2016-12-21 2018-02-12 Федеральное государственное бюджетное учреждение науки Институт сильноточной электроники Сибирского отделения Российской академии наук, (ИСЭ СО РАН) Способ испытания радиоэлектронной аппаратуры космических аппаратов на стойкость к вторичному дугообразованию
TWI810772B (zh) 2021-12-30 2023-08-01 日揚科技股份有限公司 一種快速退火設備

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JPS6132418A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 加熱装置
JPS6143417A (ja) * 1984-08-08 1986-03-03 Hitachi Ltd 加熱処理方法とそれを用いた加熱装置
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JPS62183552A (ja) * 1986-02-07 1987-08-11 Fujitsu Ltd 半導体装置
JPS6325966A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体集積回路装置の製造方法
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FR2631433B1 (fr) * 1988-05-10 1990-08-24 Sagem Perfectionnements apportes aux dispositifs permettant d'ajuster la temperature d'un element par soufflage d'un gaz a la temperature appropriee
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JP2585799B2 (ja) * 1989-06-30 1997-02-26 株式会社東芝 半導体メモリ装置及びそのバーンイン方法
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JPH04265870A (ja) * 1991-02-21 1992-09-22 Mitsubishi Electric Corp 半導体デバイスの熱ストレス評価方法

Also Published As

Publication number Publication date
US5519193A (en) 1996-05-21
JP2996332B2 (ja) 1999-12-27
DE69323270D1 (de) 1999-03-11
ES2126621T3 (es) 1999-04-01
CA2098416C (en) 1997-05-13
EP0599046A3 (de) 1995-02-01
EP0599046A2 (de) 1994-06-01
CA2098416A1 (en) 1994-04-28
DE69323270T2 (de) 1999-08-12
JPH06201771A (ja) 1994-07-22
EP0599046B1 (de) 1999-01-27

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