ATE180357T1 - Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni - Google Patents

Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni

Info

Publication number
ATE180357T1
ATE180357T1 AT93105142T AT93105142T ATE180357T1 AT E180357 T1 ATE180357 T1 AT E180357T1 AT 93105142 T AT93105142 T AT 93105142T AT 93105142 T AT93105142 T AT 93105142T AT E180357 T1 ATE180357 T1 AT E180357T1
Authority
AT
Austria
Prior art keywords
applying
material containing
surface made
bonded
materials
Prior art date
Application number
AT93105142T
Other languages
English (en)
Inventor
Michael John Brady
Curtis Edward Farrell
Sung Kwon Kang
Jeffrey Robert Marino
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE180357T1 publication Critical patent/ATE180357T1/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H10W70/662—Semiconductor materials
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01238—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in gaseous form, e.g. by CVD or PVD
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01955—Changing the shapes of bond pads by using masks
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
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    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
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    • H10W72/07535—Applying EM radiation, e.g. induction heating or using a laser
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/283—Reinforcing structures, e.g. bump collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H10W72/348—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

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  • Chemical & Material Sciences (AREA)
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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Chemically Coating (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
AT93105142T 1992-04-24 1993-03-29 Verfahren zum aufbringen eines si oder ge enthaltenden materials auf eine oberfläche aus cu oder ni ATE180357T1 (de)

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AT (1) ATE180357T1 (de)
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DE (1) DE69324959T2 (de)
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US6703291B1 (en) * 2002-12-17 2004-03-09 Intel Corporation Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions
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US20070117475A1 (en) * 2005-11-23 2007-05-24 Regents Of The University Of California Prevention of Sn whisker growth for high reliability electronic devices
US7785982B2 (en) * 2007-01-05 2010-08-31 International Business Machines Corporation Structures containing electrodeposited germanium and methods for their fabrication
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JP5860246B2 (ja) * 2011-08-25 2016-02-16 京セラサーキットソリューションズ株式会社 配線基板
US8669655B2 (en) * 2012-08-02 2014-03-11 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
US9988713B2 (en) 2013-03-12 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and methods for preparing thin film devices
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US9147605B2 (en) * 2013-06-14 2015-09-29 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and low temperature process to make thin film devices
KR101771467B1 (ko) 2013-10-17 2017-08-25 엘에스산전 주식회사 배선용 차단기의 검출기구부 간격 조절방법
US9559249B2 (en) 2014-07-22 2017-01-31 Arizona Board Of Regents Microwave-annealed indium gallium zinc oxide films and methods of making the same
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MY134716A (en) 2007-12-31
JPH0621140A (ja) 1994-01-28
CN1082770A (zh) 1994-02-23
EP0566901A2 (de) 1993-10-27
JP2526007B2 (ja) 1996-08-21
KR0135739B1 (ko) 1998-04-24
CA2089791C (en) 1998-11-24
TW217459B (de) 1993-12-11
EP0566901B1 (de) 1999-05-19
US5855993A (en) 1999-01-05
EP0566901A3 (de) 1994-01-26
DE69324959D1 (de) 1999-06-24
CA2089791A1 (en) 1993-10-25
CN1112729C (zh) 2003-06-25
BR9301497A (pt) 1993-10-26
DE69324959T2 (de) 1999-12-02
ES2131080T3 (es) 1999-07-16
KR930022536A (ko) 1993-11-24

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