ES2131080T3 - Metodo de deposicion de material que contiene si o ge sobre una superficie de cu o ni. - Google Patents

Metodo de deposicion de material que contiene si o ge sobre una superficie de cu o ni.

Info

Publication number
ES2131080T3
ES2131080T3 ES93105142T ES93105142T ES2131080T3 ES 2131080 T3 ES2131080 T3 ES 2131080T3 ES 93105142 T ES93105142 T ES 93105142T ES 93105142 T ES93105142 T ES 93105142T ES 2131080 T3 ES2131080 T3 ES 2131080T3
Authority
ES
Spain
Prior art keywords
material containing
deposition method
electrolytically
germanium
packages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93105142T
Other languages
English (en)
Inventor
Michael John Brady
Curtis Edward Farrell
Sung Kwon Kang
Jeffrey Robert Marino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2131080T3 publication Critical patent/ES2131080T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
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    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01238—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in gaseous form, e.g. by CVD or PVD
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    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
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    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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    • H10W72/347—Dispositions of multiple die-attach connectors
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    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Chemically Coating (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

SE DESCRIBEN CIERTOS MATERIALES QUE CONTIENEN SILICIO Y GERMANIO,UTILES EN LA SUPERFICIE DE CONDUCTORES DE DISPOSITIVOS ELECTRONICOS.LA SOLDADURA PUEDE SER LLEVADA A CABO DE FORMA DESAGREGADA Y LOS HILOS PUEDEN ENLAZARSE EN TALES SUPERFICIES.ESTOS MATERIALES SE UTILIZAN COMO REVESTIMIENTOS SUPERFICIALES DE ARMAZONES DE PLOMO PARA PAQUETES DE CHIPS DE CIRCUITOS INTEGRADOS.ESTOS MATERIALES PUEDEN SER TRANSFERIDOS SOBRE SUPERFICIES CONDUCTORAS O DISPUESTOS SOBRE ELLAS ELECTRONICA Y ELECTROLITICAMENTE.
ES93105142T 1992-04-24 1993-03-29 Metodo de deposicion de material que contiene si o ge sobre una superficie de cu o ni. Expired - Lifetime ES2131080T3 (es)

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US87330792A 1992-04-24 1992-04-24

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ES2131080T3 true ES2131080T3 (es) 1999-07-16

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US (1) US5855993A (es)
EP (1) EP0566901B1 (es)
JP (1) JP2526007B2 (es)
KR (1) KR0135739B1 (es)
CN (1) CN1112729C (es)
AT (1) ATE180357T1 (es)
BR (1) BR9301497A (es)
CA (1) CA2089791C (es)
DE (1) DE69324959T2 (es)
ES (1) ES2131080T3 (es)
MY (1) MY134716A (es)
TW (1) TW217459B (es)

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US20060147683A1 (en) * 2004-12-30 2006-07-06 Harima Chemicals, Inc. Flux for soldering and circuit board
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US20070117475A1 (en) * 2005-11-23 2007-05-24 Regents Of The University Of California Prevention of Sn whisker growth for high reliability electronic devices
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MY134716A (en) 2007-12-31
JPH0621140A (ja) 1994-01-28
DE69324959T2 (de) 1999-12-02
CN1082770A (zh) 1994-02-23
DE69324959D1 (de) 1999-06-24
CA2089791C (en) 1998-11-24
ATE180357T1 (de) 1999-06-15
CA2089791A1 (en) 1993-10-25
KR0135739B1 (ko) 1998-04-24
JP2526007B2 (ja) 1996-08-21
KR930022536A (ko) 1993-11-24
CN1112729C (zh) 2003-06-25
EP0566901B1 (en) 1999-05-19
US5855993A (en) 1999-01-05
BR9301497A (pt) 1993-10-26
EP0566901A3 (es) 1994-01-26
TW217459B (es) 1993-12-11
EP0566901A2 (en) 1993-10-27

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