ATE181630T1 - Cmos-bildmatrix mit aktiven bildelementen - Google Patents

Cmos-bildmatrix mit aktiven bildelementen

Info

Publication number
ATE181630T1
ATE181630T1 AT95919871T AT95919871T ATE181630T1 AT E181630 T1 ATE181630 T1 AT E181630T1 AT 95919871 T AT95919871 T AT 95919871T AT 95919871 T AT95919871 T AT 95919871T AT E181630 T1 ATE181630 T1 AT E181630T1
Authority
AT
Austria
Prior art keywords
active
pixel
matrix
image
elements
Prior art date
Application number
AT95919871T
Other languages
English (en)
Inventor
Tzu-Chiang Hsieh
R Daniel Mcgrath
Original Assignee
Polaroid Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polaroid Corp filed Critical Polaroid Corp
Application granted granted Critical
Publication of ATE181630T1 publication Critical patent/ATE181630T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
  • Facsimile Heads (AREA)
AT95919871T 1994-05-19 1995-05-18 Cmos-bildmatrix mit aktiven bildelementen ATE181630T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24634194A 1994-05-19 1994-05-19

Publications (1)

Publication Number Publication Date
ATE181630T1 true ATE181630T1 (de) 1999-07-15

Family

ID=22930262

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95919871T ATE181630T1 (de) 1994-05-19 1995-05-18 Cmos-bildmatrix mit aktiven bildelementen

Country Status (8)

Country Link
EP (1) EP0760191B1 (de)
JP (1) JPH10500823A (de)
KR (1) KR100264931B1 (de)
CN (1) CN1148454A (de)
AT (1) ATE181630T1 (de)
CA (1) CA2190615A1 (de)
DE (1) DE69510454T2 (de)
WO (1) WO1995032580A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387253B1 (en) 1996-09-03 2008-06-17 Hand Held Products, Inc. Optical reader system comprising local host processor and optical reader
US5923794A (en) * 1996-02-06 1999-07-13 Polaroid Corporation Current-mediated active-pixel image sensing device with current reset
US5831258A (en) * 1996-08-20 1998-11-03 Xerox Corporation Pixel circuit with integrated amplifer
US6677995B1 (en) 1999-02-04 2004-01-13 Agere Systems Inc. Array readout system
US6704050B1 (en) * 1999-04-23 2004-03-09 Polaroid Corporation Active-pixel image sensing device with linear mode voltage to current conversion
DE10025897B4 (de) * 2000-05-25 2004-07-15 Sick Ag Verfahren zum Betreiben einer optoelektronischen Sensoranordnung und optoelektronische Sensoranordnung
KR100397663B1 (ko) * 2000-06-23 2003-09-13 (주) 픽셀플러스 데이터 입출력선이 리셋 모드의 전압으로 유지되는 씨모스 이미지 센서
US7270273B2 (en) 2001-01-22 2007-09-18 Hand Held Products, Inc. Optical reader having partial frame operating mode
US7268924B2 (en) 2001-01-22 2007-09-11 Hand Held Products, Inc. Optical reader having reduced parameter determination delay
US7331523B2 (en) 2001-07-13 2008-02-19 Hand Held Products, Inc. Adaptive optical image reader
JP3944829B2 (ja) * 2002-01-17 2007-07-18 ソニー株式会社 固体撮像装置およびその駆動方法
US8628015B2 (en) 2008-10-31 2014-01-14 Hand Held Products, Inc. Indicia reading terminal including frame quality evaluation processing
CN111262572B (zh) * 2020-02-25 2023-04-07 成都高迈微电子有限公司 一种能够增强背景一致性的电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5738073A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Solid-state image sensor
US4634894A (en) * 1985-03-04 1987-01-06 Advanced Micro Devices, Inc. Low power CMOS reference generator with low impedance driver
US4620232A (en) * 1985-03-15 1986-10-28 Fuji Photo Film Co., Ltd. Reset circuit for MOS imager array
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles

Also Published As

Publication number Publication date
KR100264931B1 (ko) 2000-09-01
WO1995032580A1 (en) 1995-11-30
EP0760191B1 (de) 1999-06-23
DE69510454D1 (de) 1999-07-29
CN1148454A (zh) 1997-04-23
JPH10500823A (ja) 1998-01-20
CA2190615A1 (en) 1995-11-30
EP0760191A1 (de) 1997-03-05
DE69510454T2 (de) 1999-10-21
KR970703673A (ko) 1997-07-03

Similar Documents

Publication Publication Date Title
ATE181630T1 (de) Cmos-bildmatrix mit aktiven bildelementen
US6815685B2 (en) Photodetector and method for detecting radiation
ATE285122T1 (de) Ccd-bildaufnahmevorrichtung mit multiplizierregister
EP1592068A3 (de) MOS-Bildaufnahmevorrichtung
KR830006824A (ko) 고체촬상소자
EP0793378A3 (de) Photoelektrische Umwandlervorrichtung mit Ladungsabschöpfung
JPS642354A (en) Transistor image sensor array and method for detecting voltage signal
NO20012565L (no) Lysfölersystem og fremgangsmåte for styring av dette
JP3965049B2 (ja) 撮像装置
WO2004081517A3 (fr) Matrice de pixels detecteurs integree sur circuit de lecture de charges
CA2342474A1 (en) Image sensor with a voltage switching circuit for low afterglow
CN102804753B (zh) 用于x射线传感器的处理电路
SE0201044L (sv) Anordning vid ett mätsystem
JPH0453149B2 (de)
EP3664439A1 (de) Optoelektronisch, ausleseverfahren und verwendungen der optoelektronischen vorrichtung
JPH01135274A (ja) 固体撮像装置
JPS6161589B2 (de)
KR960026912A (ko) 고체 촬상 소자
JPH02184072A (ja) 固体撮像装置
TW392411B (en) Image sensor
JPS63142781A (ja) 固体撮像装置
CN114830632A (zh) 光检测装置和光传感器的驱动方法
KR930024467A (ko) 증폭형 고체 촬상장치
JPH11122534A5 (de)
EP0105386B1 (de) Halbleiterbildaufzeichnungselement

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee