ATE285122T1 - Ccd-bildaufnahmevorrichtung mit multiplizierregister - Google Patents
Ccd-bildaufnahmevorrichtung mit multiplizierregisterInfo
- Publication number
- ATE285122T1 ATE285122T1 AT98301428T AT98301428T ATE285122T1 AT E285122 T1 ATE285122 T1 AT E285122T1 AT 98301428 T AT98301428 T AT 98301428T AT 98301428 T AT98301428 T AT 98301428T AT E285122 T1 ATE285122 T1 AT E285122T1
- Authority
- AT
- Austria
- Prior art keywords
- register
- charge
- electrodes
- drive pulses
- multiplication
- Prior art date
Links
- 230000003321 amplification Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Heat Treatment Of Strip Materials And Filament Materials (AREA)
- Measurement Of Optical Distance (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9705986A GB2323471B (en) | 1997-03-22 | 1997-03-22 | CCd imagers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE285122T1 true ATE285122T1 (de) | 2005-01-15 |
Family
ID=10809702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98301428T ATE285122T1 (de) | 1997-03-22 | 1998-02-26 | Ccd-bildaufnahmevorrichtung mit multiplizierregister |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6444968B1 (de) |
| EP (1) | EP0866501B1 (de) |
| JP (1) | JP3862850B2 (de) |
| AT (1) | ATE285122T1 (de) |
| DE (1) | DE69828099T2 (de) |
| GB (1) | GB2323471B (de) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4173575B2 (ja) | 1998-01-16 | 2008-10-29 | 浜松ホトニクス株式会社 | 撮像装置 |
| GB9828166D0 (en) * | 1998-12-22 | 1999-02-17 | Eev Ltd | Imaging apparatus |
| US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
| EP1152469B1 (de) * | 2000-04-28 | 2015-12-02 | Texas Instruments Japan Limited | Ladungssignalauslesesystem mit hohem Dynamikbereich |
| GB2371403B (en) * | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
| US7420605B2 (en) | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
| US7139023B2 (en) * | 2001-03-12 | 2006-11-21 | Texas Instruments Incorporated | High dynamic range charge readout system |
| US7190400B2 (en) * | 2001-06-04 | 2007-03-13 | Texas Instruments Incorporated | Charge multiplier with logarithmic dynamic range compression implemented in charge domain |
| US6784412B2 (en) * | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
| US6895077B2 (en) | 2001-11-21 | 2005-05-17 | University Of Massachusetts Medical Center | System and method for x-ray fluoroscopic imaging |
| US6917041B2 (en) * | 2002-03-18 | 2005-07-12 | Massachusetts Institute Of Technology | Event-driven charge-coupled device design and applications therefor |
| JP3689866B2 (ja) * | 2002-05-30 | 2005-08-31 | 日本テキサス・インスツルメンツ株式会社 | Cmd及びcmd搭載ccd装置 |
| FR2850168B1 (fr) * | 2003-01-21 | 2005-04-01 | Cit Alcatel | Procede de detection d'un signal lumineux, et chaine lidar |
| US7436494B1 (en) | 2003-03-28 | 2008-10-14 | Irvine Sensors Corp. | Three-dimensional ladar module with alignment reference insert circuitry |
| GB0316994D0 (en) * | 2003-07-21 | 2003-08-27 | E2V Tech Uk Ltd | Smear reduction in CCD images |
| US7078670B2 (en) * | 2003-09-15 | 2006-07-18 | Imagerlabs, Inc. | Low noise charge gain circuit and CCD using same |
| ATE509289T1 (de) | 2003-10-31 | 2011-05-15 | Agfa Gevaert Healthcare Gmbh | Leuchtstoffauslesevorrichtung und leuchtstoffausleseverfahren |
| GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
| JP4442608B2 (ja) | 2004-07-20 | 2010-03-31 | 株式会社島津製作所 | 固体撮像装置、撮像装置並びに撮像素子 |
| US7378634B2 (en) * | 2004-07-27 | 2008-05-27 | Sarnoff Corporation | Imaging methods and apparatus having extended dynamic range |
| US7522205B2 (en) * | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
| KR100868832B1 (ko) | 2004-10-07 | 2008-11-14 | 가부시키가이샤 시마즈세이사쿠쇼 | 촬상소자 및 그것을 이용한 촬상장치, 및 촬상소자를제조하는 제조방법 |
| JP2008517280A (ja) * | 2004-10-18 | 2008-05-22 | マクオーリー ユニヴァーシティ | 蛍光検出 |
| US7391000B2 (en) | 2004-10-20 | 2008-06-24 | Leica Microsystems Cms Gmbh | EMCCD detector, as well as a spectrometer and a microscope having an EMCCD detector |
| DE102004051201A1 (de) * | 2004-10-20 | 2006-05-11 | Leica Microsystems Cms Gmbh | EMCCD-Detektor sowie ein Spektrometer und ein Mikroskop mit einem EMCCD-Detektor |
| GB0501149D0 (en) * | 2005-01-20 | 2005-02-23 | Andor Technology Plc | Automatic calibration of electron multiplying CCds |
| GB0503827D0 (en) | 2005-02-24 | 2005-04-06 | E2V Tech Uk Ltd | Enhanced spectral range imaging sensor |
| GB2424758A (en) * | 2005-03-31 | 2006-10-04 | E2V Tech | CCD device |
| DE102005025641A1 (de) | 2005-06-03 | 2006-12-07 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Srahlungsdetektor zur Detektion intensitätsarmer Strahlung |
| GB2429521A (en) * | 2005-08-18 | 2007-02-28 | E2V Tech | CCD device for time resolved spectroscopy |
| GB2431538B (en) * | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
| JP2007175294A (ja) * | 2005-12-28 | 2007-07-12 | Ge Medical Systems Global Technology Co Llc | イメージセンサ及びその制御方法並びにx線検出器及びx線ct装置 |
| DE102006000976A1 (de) | 2006-01-07 | 2007-07-12 | Leica Microsystems Cms Gmbh | Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips |
| GB2435126A (en) * | 2006-02-14 | 2007-08-15 | E2V Tech | EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use. |
| JP4835836B2 (ja) | 2006-03-30 | 2011-12-14 | 日本電気株式会社 | 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法 |
| JP4759444B2 (ja) * | 2006-06-05 | 2011-08-31 | 富士フイルム株式会社 | Ccd型固体撮像素子の駆動方法、固体撮像装置 |
| JP4198166B2 (ja) | 2006-07-27 | 2008-12-17 | 三洋電機株式会社 | 撮像装置 |
| US7485840B2 (en) | 2007-02-08 | 2009-02-03 | Dalsa Corporation | Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device |
| EP1983332B1 (de) * | 2007-04-18 | 2016-08-31 | Horiba Jobin Yvon S.A.S. | Spektroskopisches Bildgebungsverfahren und System zur Untersuchung der Oberfläche einer Probe |
| JP2008271049A (ja) | 2007-04-18 | 2008-11-06 | Hamamatsu Photonics Kk | 撮像装置及びそのゲイン調整方法 |
| JP4851388B2 (ja) | 2007-05-16 | 2012-01-11 | 浜松ホトニクス株式会社 | 撮像装置 |
| GB0717484D0 (en) * | 2007-09-07 | 2007-10-17 | E2V Tech Uk Ltd | Gain measurement method |
| US7755685B2 (en) * | 2007-09-28 | 2010-07-13 | Sarnoff Corporation | Electron multiplication CMOS imager |
| JP5438331B2 (ja) * | 2009-01-30 | 2014-03-12 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5330001B2 (ja) | 2009-01-30 | 2013-10-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5243984B2 (ja) | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| JP5237844B2 (ja) | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5335459B2 (ja) | 2009-01-30 | 2013-11-06 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| JP5243983B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| JP5270392B2 (ja) * | 2009-01-30 | 2013-08-21 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5237843B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5346605B2 (ja) | 2009-01-30 | 2013-11-20 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| GB2468668B (en) | 2009-03-17 | 2014-07-16 | E2V Tech Uk Ltd | CCD imaging array with extended dynamic range |
| US8440986B2 (en) * | 2010-04-23 | 2013-05-14 | Uchicago Argonne, Llc. | On axis sample visualization along a synchrontron photo beam |
| JP2011243781A (ja) | 2010-05-19 | 2011-12-01 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
| US8493492B2 (en) | 2010-12-14 | 2013-07-23 | Truesense Imaging, Inc. | Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels |
| US8479374B2 (en) | 2010-12-14 | 2013-07-09 | Truesense Imaging, Inc. | Method of producing an image sensor having multiple output channels |
| US8493491B2 (en) | 2010-12-14 | 2013-07-23 | Truesense Imaging, Inc. | Methods for processing an image captured by an image sensor having multiple output channels |
| US8773564B2 (en) | 2010-12-14 | 2014-07-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
| US8553126B2 (en) | 2010-12-14 | 2013-10-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
| US8411189B2 (en) | 2011-05-25 | 2013-04-02 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
| US8773563B2 (en) | 2011-05-25 | 2014-07-08 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
| US8800130B2 (en) | 2011-05-25 | 2014-08-12 | Truesense Imaging, Inc. | Methods for producing image sensors having multi-purpose architecture |
| US9453914B2 (en) * | 2011-09-08 | 2016-09-27 | Continental Advanced Lidar Solutions Us, Inc. | Terrain mapping LADAR system |
| GB2549330A (en) * | 2016-04-15 | 2017-10-18 | Teledyne E2V (Uk) Ltd | Image sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3761744A (en) * | 1971-12-02 | 1973-09-25 | Bell Telephone Labor Inc | Semiconductor charge transfer devices |
| JPS6233399A (ja) | 1985-08-05 | 1987-02-13 | Hitachi Ltd | Ccd遅延線 |
| JPS6386672A (ja) * | 1986-09-30 | 1988-04-18 | Nec Corp | Ccdイメ−ジセンサの密度変換方法 |
| US4912536A (en) * | 1988-04-15 | 1990-03-27 | Northrop Corporation | Charge accumulation and multiplication photodetector |
| GB8901200D0 (en) * | 1989-01-19 | 1989-03-15 | Eev Ltd | Camera using imaging array |
| DE69231482T2 (de) * | 1991-07-11 | 2001-05-10 | Texas Instruments Inc | Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) |
| US5236871A (en) * | 1992-04-29 | 1993-08-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for producing a hybridization of detector array and integrated circuit for readout |
| JPH05335549A (ja) * | 1992-06-01 | 1993-12-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその駆動方法 |
| US5665959A (en) | 1995-01-13 | 1997-09-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration | Solid-state image sensor with focal-plane digital photon-counting pixel array |
-
1997
- 1997-03-22 GB GB9705986A patent/GB2323471B/en not_active Expired - Lifetime
-
1998
- 1998-02-26 DE DE69828099T patent/DE69828099T2/de not_active Expired - Lifetime
- 1998-02-26 EP EP98301428A patent/EP0866501B1/de not_active Expired - Lifetime
- 1998-02-26 AT AT98301428T patent/ATE285122T1/de active
- 1998-03-17 JP JP06648698A patent/JP3862850B2/ja not_active Expired - Lifetime
-
2000
- 2000-11-20 US US09/715,029 patent/US6444968B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69828099D1 (de) | 2005-01-20 |
| GB2323471B (en) | 2002-04-17 |
| DE69828099T2 (de) | 2005-11-03 |
| JPH10304256A (ja) | 1998-11-13 |
| GB9705986D0 (en) | 1997-05-07 |
| US6444968B1 (en) | 2002-09-03 |
| GB2323471A (en) | 1998-09-23 |
| EP0866501B1 (de) | 2004-12-15 |
| JP3862850B2 (ja) | 2006-12-27 |
| EP0866501A1 (de) | 1998-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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