ATE182738T1 - Vorrichtung zur erzeugung einer linearen bogenentladung für plasmabehandlung - Google Patents

Vorrichtung zur erzeugung einer linearen bogenentladung für plasmabehandlung

Info

Publication number
ATE182738T1
ATE182738T1 AT95937260T AT95937260T ATE182738T1 AT E182738 T1 ATE182738 T1 AT E182738T1 AT 95937260 T AT95937260 T AT 95937260T AT 95937260 T AT95937260 T AT 95937260T AT E182738 T1 ATE182738 T1 AT E182738T1
Authority
AT
Austria
Prior art keywords
pct
electrode
arc discharge
electrode plate
date
Prior art date
Application number
AT95937260T
Other languages
English (en)
Inventor
Ladislav Bardos
Hana Barankova
Original Assignee
Surfcoat Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surfcoat Oy filed Critical Surfcoat Oy
Application granted granted Critical
Publication of ATE182738T1 publication Critical patent/ATE182738T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
AT95937260T 1994-11-18 1995-10-20 Vorrichtung zur erzeugung einer linearen bogenentladung für plasmabehandlung ATE182738T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9403988A SE9403988L (sv) 1994-11-18 1994-11-18 Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning

Publications (1)

Publication Number Publication Date
ATE182738T1 true ATE182738T1 (de) 1999-08-15

Family

ID=20396028

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95937260T ATE182738T1 (de) 1994-11-18 1995-10-20 Vorrichtung zur erzeugung einer linearen bogenentladung für plasmabehandlung

Country Status (13)

Country Link
US (1) US5908602A (de)
EP (1) EP0792572B1 (de)
JP (1) JP3652702B2 (de)
KR (1) KR100333800B1 (de)
AT (1) ATE182738T1 (de)
AU (1) AU688996B2 (de)
CA (1) CA2205576C (de)
DE (1) DE69511103T2 (de)
DK (1) DK0792572T3 (de)
ES (1) ES2138755T3 (de)
NO (1) NO309920B1 (de)
SE (1) SE9403988L (de)
WO (1) WO1996016531A1 (de)

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SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
SE516336C2 (sv) * 1999-04-28 2001-12-17 Hana Barankova Apparat för plasmabehandling av ytor
US7091605B2 (en) * 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6444945B1 (en) 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US6764658B2 (en) * 2002-01-08 2004-07-20 Wisconsin Alumni Research Foundation Plasma generator
US20030168009A1 (en) * 2002-03-08 2003-09-11 Denes Ferencz S. Plasma processing within low-dimension cavities
KR100650094B1 (ko) * 2002-08-30 2006-11-27 세키스이가가쿠 고교가부시키가이샤 플라즈마 처리 장치
EP1554412B1 (de) * 2002-09-19 2013-08-14 General Plasma, Inc. Plasmaunterstützte chemische Gasphasenabscheidung Vorrichtung
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP3933035B2 (ja) * 2002-11-06 2007-06-20 富士ゼロックス株式会社 カーボンナノチューブの製造装置および製造方法
US7038389B2 (en) * 2003-05-02 2006-05-02 Applied Process Technologies, Inc. Magnetron plasma source
US7867366B1 (en) 2004-04-28 2011-01-11 Alameda Applied Sciences Corp. Coaxial plasma arc vapor deposition apparatus and method
US8038858B1 (en) 2004-04-28 2011-10-18 Alameda Applied Sciences Corp Coaxial plasma arc vapor deposition apparatus and method
DE102004043967B4 (de) * 2004-09-11 2010-01-07 Roth & Rau Ag Anordnung und Verfahren zur Plasmabehandlung eines Substrates
FR2912864B1 (fr) * 2007-02-15 2009-07-31 H E F Soc Par Actions Simplifi Dispositif pour generer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques
KR101468077B1 (ko) * 2007-07-19 2014-12-05 엘아이지에이디피 주식회사 상압 플라즈마 처리장치
WO2009149563A1 (en) * 2008-06-13 2009-12-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
CN105177526B (zh) * 2008-08-04 2018-12-11 北美Agc平板玻璃公司 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
RU2370002C1 (ru) * 2008-10-20 2009-10-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Способ получения плазменного источника излучения и устройство для его осуществления
WO2011156877A1 (en) * 2010-06-18 2011-12-22 Mahle Metal Leve S/A Plasma processing device
WO2011156876A1 (en) * 2010-06-18 2011-12-22 Mahle Metal Leve S/A Plasma processing device
US8697198B2 (en) * 2011-03-31 2014-04-15 Veeco Ald Inc. Magnetic field assisted deposition
US9508532B2 (en) 2013-03-13 2016-11-29 Bb Plasma Design Ab Magnetron plasma apparatus
KR102272311B1 (ko) 2014-12-05 2021-07-06 에이쥐씨 글래스 유럽 중공형 음극 플라즈마 소스
ES2900321T3 (es) 2014-12-05 2022-03-16 Agc Flat Glass Na Inc Fuente de plasma que utiliza un recubrimiento de reducción de macropartículas y procedimiento para usar una fuente de plasma que utiliza un recubrimiento de reducción de macropartículas para la deposición de recubrimientos de película delgada y modificación de superficies
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
RU168090U1 (ru) * 2016-06-06 2017-01-18 Акционерное общество "Научно-исследовательский институт оптико-электронного приборостроения" АО "НИИ ОЭП" Плазменный источник светового излучения
RU168022U1 (ru) * 2016-06-15 2017-01-17 Акционерное общество "Научно-исследовательский институт оптико-электронного приборостроения" АО "НИИ ОЭП" Плазменный источник светового излучения
CN111225944B (zh) * 2017-08-07 2023-03-28 春日电机股份有限公司 表面改性装置
KR102216854B1 (ko) * 2019-09-30 2021-02-17 포항공과대학교 산학협력단 마이크로파 플라즈마를 이용한 아크 방전장치 및 아크 방전방법
FR3115180B1 (fr) * 2020-10-14 2022-11-04 Peter Choi Appareil de génération de plasma
CN115928029B (zh) * 2022-11-25 2025-06-24 苏州臻锂新材科技有限公司 一种溅射沉积组件、沉积室、真空沉积设备

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US3562141A (en) * 1968-02-23 1971-02-09 John R Morley Vacuum vapor deposition utilizing low voltage electron beam
US4521286A (en) * 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
FR2581244B1 (fr) * 1985-04-29 1987-07-10 Centre Nat Rech Scient Source d'ions du type triode a une seule chambre d'ionisation a excitation haute frequence et a confinement magnetique du type multipolaire
CS246982B1 (en) * 1985-06-17 1986-11-13 Ladislav Bardos Method and apparatus for producing chemically active environment for plasma chemical reactions namely for deposition of thin layers
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
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NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
EP0431951B1 (de) * 1989-12-07 1998-10-07 Research Development Corporation Of Japan Verfahren und Gerät zur Plasmabehandlung unter atmosphärischem Druck
US5133986A (en) * 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
US5279723A (en) * 1992-07-30 1994-01-18 As Represented By The United States Department Of Energy Filtered cathodic arc source
DE4235953C2 (de) * 1992-10-23 1998-07-02 Fraunhofer Ges Forschung Sputterquelle mit einer linearen Hohlkathode zum reaktiven Beschichten von Substraten
SE501888C2 (sv) * 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden

Also Published As

Publication number Publication date
AU688996B2 (en) 1998-03-19
SE503141C2 (sv) 1996-04-01
EP0792572B1 (de) 1999-07-28
EP0792572A1 (de) 1997-09-03
NO972280D0 (no) 1997-05-20
DE69511103D1 (de) 1999-09-02
US5908602A (en) 1999-06-01
JPH10509833A (ja) 1998-09-22
CA2205576A1 (en) 1996-05-30
ES2138755T3 (es) 2000-01-16
AU3942095A (en) 1996-06-17
KR100333800B1 (ko) 2002-11-27
WO1996016531A1 (en) 1996-05-30
DE69511103T2 (de) 2000-04-13
SE9403988D0 (sv) 1994-11-18
DK0792572T3 (da) 2000-03-13
NO972280L (no) 1997-07-10
SE9403988L (sv) 1996-04-01
CA2205576C (en) 2005-09-20
NO309920B1 (no) 2001-04-17
JP3652702B2 (ja) 2005-05-25

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EEFA Change of the company name
REN Ceased due to non-payment of the annual fee