ATE194250T1 - Halbleiter bauelement mit tiefen störstellenniveau für anwendung bei hoher temperatur - Google Patents

Halbleiter bauelement mit tiefen störstellenniveau für anwendung bei hoher temperatur

Info

Publication number
ATE194250T1
ATE194250T1 AT94114876T AT94114876T ATE194250T1 AT E194250 T1 ATE194250 T1 AT E194250T1 AT 94114876 T AT94114876 T AT 94114876T AT 94114876 T AT94114876 T AT 94114876T AT E194250 T1 ATE194250 T1 AT E194250T1
Authority
AT
Austria
Prior art keywords
high temperature
deep
level
improperty
semiconductor component
Prior art date
Application number
AT94114876T
Other languages
English (en)
Inventor
Yoshiki Nishibayashi
Shin-Ichi Shikata
Naoji Fujimori
Takeshi Kobayashi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE194250T1 publication Critical patent/ATE194250T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8171—Doping structures, e.g. doping superlattices or nipi superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
AT94114876T 1993-09-24 1994-09-21 Halbleiter bauelement mit tiefen störstellenniveau für anwendung bei hoher temperatur ATE194250T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23857793A JP3563093B2 (ja) 1993-09-24 1993-09-24 半導体装置

Publications (1)

Publication Number Publication Date
ATE194250T1 true ATE194250T1 (de) 2000-07-15

Family

ID=17032286

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94114876T ATE194250T1 (de) 1993-09-24 1994-09-21 Halbleiter bauelement mit tiefen störstellenniveau für anwendung bei hoher temperatur

Country Status (5)

Country Link
US (1) US5670796A (de)
EP (1) EP0646970B1 (de)
JP (1) JP3563093B2 (de)
AT (1) ATE194250T1 (de)
DE (1) DE69425030T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
DE19643550A1 (de) * 1996-10-24 1998-05-14 Leybold Systems Gmbh Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
JP4937498B2 (ja) * 2000-06-27 2012-05-23 パナソニック株式会社 半導体デバイス
JP3650727B2 (ja) * 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
DE10061191A1 (de) * 2000-12-08 2002-06-13 Ihp Gmbh Schichten in Substratscheiben
JP4770105B2 (ja) * 2002-02-07 2011-09-14 住友電気工業株式会社 ｎ型ダイヤモンド半導体
US6953740B2 (en) * 2002-03-15 2005-10-11 Cornell Research Foundation, Inc. Highly doped III-nitride semiconductors
WO2005080645A2 (en) * 2004-02-13 2005-09-01 Apollo Diamond, Inc. Diamond structure separation
US7709317B2 (en) * 2005-11-14 2010-05-04 International Business Machines Corporation Method to increase strain enhancement with spacerless FET and dual liner process
US10515969B2 (en) 2016-11-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4785340A (en) * 1985-03-29 1988-11-15 Director-General Of The Agency Of Industrial Science And Technology Semiconductor device having doping multilayer structure
JPH065774B2 (ja) * 1985-08-07 1994-01-19 工業技術院長 太陽電池
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
DE4009837A1 (de) * 1989-03-27 1990-10-11 Sharp Kk Verfahren zur herstellung einer halbleitereinrichtung
JPH02299273A (ja) * 1989-05-15 1990-12-11 Toshiba Corp 電界効果トランジスタ
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JP2961812B2 (ja) * 1990-05-17 1999-10-12 住友電気工業株式会社 半導体装置
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JP2985337B2 (ja) * 1991-03-08 1999-11-29 住友電気工業株式会社 半導体装置
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile
JPH0685286A (ja) * 1992-09-03 1994-03-25 Sumitomo Electric Ind Ltd 電界効果トランジスタおよびその製造方法
CA2090441A1 (en) * 1993-02-26 1994-08-27 Shigeru Nakajima Field-effect transistor having a double pulse-doped structure

Also Published As

Publication number Publication date
EP0646970A2 (de) 1995-04-05
EP0646970A3 (de) 1996-11-06
DE69425030T2 (de) 2001-03-22
US5670796A (en) 1997-09-23
EP0646970B1 (de) 2000-06-28
JP3563093B2 (ja) 2004-09-08
JPH0794708A (ja) 1995-04-07
DE69425030D1 (de) 2000-08-03

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties