ATE204037T1 - Mechanisch -chemisches polieren von kristallen und epitaxie-schichten aus gan und ga1-x-yalxinyn - Google Patents

Mechanisch -chemisches polieren von kristallen und epitaxie-schichten aus gan und ga1-x-yalxinyn

Info

Publication number: ATE204037T1
Authority: AT; Austria
Prior art keywords: polishing; gan; yalxinyn; crystals; mechanical
Prior art date: 1997-04-04

Application number

AT98907295T

Other languages

English (en)

Inventor

Sylwester Porowski

Izabella Grzegory

Jan Weyher

Grzegorz Nowak

Original Assignee

Ct Badan Wysokocisnieniowych

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-04-04

Filing date

1998-03-13

Publication date

2001-08-15

1998-03-13 Application filed by Ct Badan Wysokocisnieniowych filed Critical Ct Badan Wysokocisnieniowych

2001-08-15 Application granted granted Critical

2001-08-15 Publication of ATE204037T1 publication Critical patent/ATE204037T1/de

Links

238000005498 polishing Methods 0.000 title abstract 6
239000013078 crystal Substances 0.000 title abstract 3
239000000126 substance Substances 0.000 title abstract 2
238000000407 epitaxy Methods 0.000 title 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
239000003795 chemical substances by application Substances 0.000 abstract 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
238000003486 chemical etching Methods 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
229910052757 nitrogen Inorganic materials 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Weting (AREA)
Semiconductor Lasers (AREA)

AT98907295T 1997-04-04 1998-03-13 Mechanisch -chemisches polieren von kristallen und epitaxie-schichten aus gan und ga1-x-yalxinyn ATE204037T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
PL97319329A PL184902B1 (pl)	1997-04-04	1997-04-04	Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
PCT/PL1998/000010 WO1998045511A1 (en)	1997-04-04	1998-03-13	MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN

Publications (1)

Publication Number	Publication Date
ATE204037T1 true ATE204037T1 (de)	2001-08-15

Family

ID=20069596

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT98907295T ATE204037T1 (de)	1997-04-04	1998-03-13	Mechanisch -chemisches polieren von kristallen und epitaxie-schichten aus gan und ga1-x-yalxinyn

Country Status (7)

Country	Link
US (1)	US6399500B1 (de)
EP (1)	EP0972097B1 (de)
JP (1)	JP4184441B2 (de)
AT (1)	ATE204037T1 (de)
DE (1)	DE69801316T2 (de)
PL (1)	PL184902B1 (de)
WO (1)	WO1998045511A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4145437B2 (ja)	1999-09-28	2008-09-03	住友電気工業株式会社	単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2001144014A (ja) *	1999-11-17	2001-05-25	Ngk Insulators Ltd	エピタキシャル成長用基板およびその製造方法
KR100850293B1 (ko) *	2001-06-06	2008-08-04	니치아 카가쿠 고교 가부시키가이샤	벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치
US6488767B1 (en) *	2001-06-08	2002-12-03	Advanced Technology Materials, Inc.	High surface quality GaN wafer and method of fabricating same
WO2003035945A2 (en)	2001-10-26	2003-05-01	Ammono Sp. Zo.O.	Substrate for epitaxy
JP4383172B2 (ja) *	2001-10-26	2009-12-16	アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン	窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
US20060138431A1 (en) *	2002-05-17	2006-06-29	Robert Dwilinski	Light emitting device structure having nitride bulk single crystal layer
WO2003098757A1 (en) *	2002-05-17	2003-11-27	Ammono Sp.Zo.O.	Light emitting element structure having nitride bulk single crystal layer
US7335262B2 (en) *	2002-05-17	2008-02-26	Ammono Sp. Z O.O.	Apparatus for obtaining a bulk single crystal using supercritical ammonia
WO2004003261A1 (en) *	2002-06-26	2004-01-08	Ammono Sp. Z O.O.	Process for obtaining of bulk monocrystallline gallium-containing nitride
KR101088991B1 (ko) *	2002-12-11	2011-12-01	니치아 카가쿠 고교 가부시키가이샤	벌크 단결정 갈륨-함유 질화물의 제조공정
AU2003285769A1 (en) *	2002-12-11	2004-06-30	Ammono Sp. Z O.O.	A substrate for epitaxy and a method of preparing the same
JP4511801B2 (ja) *	2003-03-14	2010-07-28	株式会社リコー	Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
US20060012011A1 (en) *	2003-06-16	2006-01-19	Seiji Nakahata	Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
JP5014804B2 (ja) *	2004-06-11	2012-08-29	アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン	バルク単結晶ガリウム含有窒化物およびその用途
PL371405A1 (pl) *	2004-11-26	2006-05-29	Ammono Sp.Z O.O.	Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
JP2007299979A (ja)	2006-05-01	2007-11-15	Sumitomo Electric Ind Ltd	Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板
PL2024992T3 (pl)	2006-07-26	2017-09-29	Freiberger Compound Materials Gmbh	Sposób wygładzania podłoży III-N
US7585772B2 (en) *	2006-07-26	2009-09-08	Freiberger Compound Materials Gmbh	Process for smoothening III-N substrates
JP2009272380A (ja) *	2008-05-01	2009-11-19	Sumitomo Electric Ind Ltd	Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法

1997
- 1997-04-04 PL PL97319329A patent/PL184902B1/pl unknown
1998
- 1998-03-13 AT AT98907295T patent/ATE204037T1/de not_active IP Right Cessation
- 1998-03-13 US US09/402,692 patent/US6399500B1/en not_active Expired - Fee Related
- 1998-03-13 DE DE69801316T patent/DE69801316T2/de not_active Expired - Lifetime
- 1998-03-13 JP JP54264598A patent/JP4184441B2/ja not_active Expired - Fee Related
- 1998-03-13 EP EP98907295A patent/EP0972097B1/de not_active Expired - Lifetime
- 1998-03-13 WO PCT/PL1998/000010 patent/WO1998045511A1/en not_active Ceased

Also Published As

Publication number	Publication date
JP4184441B2 (ja)	2008-11-19
JP2001518870A (ja)	2001-10-16
US6399500B1 (en)	2002-06-04
DE69801316D1 (de)	2001-09-13
WO1998045511A1 (en)	1998-10-15
EP0972097A1 (de)	2000-01-19
PL319329A1 (en)	1998-10-12
EP0972097B1 (de)	2001-08-08
DE69801316T2 (de)	2002-05-02
PL184902B1 (pl)	2003-01-31

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Legal Events

Date	Code	Title	Description
2002-02-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties