ATE205263T1 - Vorrichtung zur chemischen dampfabscheidung bei niedrigem druck - Google Patents

Vorrichtung zur chemischen dampfabscheidung bei niedrigem druck

Info

Publication number
ATE205263T1
ATE205263T1 AT95309190T AT95309190T ATE205263T1 AT E205263 T1 ATE205263 T1 AT E205263T1 AT 95309190 T AT95309190 T AT 95309190T AT 95309190 T AT95309190 T AT 95309190T AT E205263 T1 ATE205263 T1 AT E205263T1
Authority
AT
Austria
Prior art keywords
reactor
vapor deposition
chemical vapor
low pressure
substrate
Prior art date
Application number
AT95309190T
Other languages
English (en)
Inventor
Chul-Ju Hwang
Original Assignee
Hwang Chul Ju
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950001029A external-priority patent/KR100225916B1/ko
Priority claimed from KR2019950006520U external-priority patent/KR0138989Y1/ko
Priority claimed from KR1019950023668A external-priority patent/KR0148714B1/ko
Application filed by Hwang Chul Ju filed Critical Hwang Chul Ju
Application granted granted Critical
Publication of ATE205263T1 publication Critical patent/ATE205263T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
AT95309190T 1994-12-16 1995-12-18 Vorrichtung zur chemischen dampfabscheidung bei niedrigem druck ATE205263T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR19940034617 1994-12-16
KR1019950001029A KR100225916B1 (ko) 1994-12-16 1995-01-21 플라즈마가 적용된 저압 화학 증기 증착장치
KR2019950006520U KR0138989Y1 (ko) 1995-04-01 1995-04-01 매엽식 플라즈마 저압 화학 증기 증착장치
KR1019950023668A KR0148714B1 (ko) 1995-08-01 1995-08-01 매엽식 저압화학증기증착기의 서셉터 장치

Publications (1)

Publication Number Publication Date
ATE205263T1 true ATE205263T1 (de) 2001-09-15

Family

ID=27483057

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95309190T ATE205263T1 (de) 1994-12-16 1995-12-18 Vorrichtung zur chemischen dampfabscheidung bei niedrigem druck

Country Status (6)

Country Link
US (4) US5928427A (de)
EP (1) EP0717126B1 (de)
JP (1) JP3889074B2 (de)
AT (1) ATE205263T1 (de)
DE (1) DE69522539T2 (de)
TW (1) TW340138B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
TW415970B (en) * 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US6521081B2 (en) * 1997-12-05 2003-02-18 Tegal Corporation Deposition shield for a plasma reactor
KR20010032824A (ko) * 1997-12-05 2001-04-25 테갈 코퍼레이션 증착 실드를 갖는 플라즈마 리액터
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
EP1058055B1 (de) * 1998-12-18 2009-10-14 Panasonic Corporation Katalytische verbrennungseinrichtung
US6250250B1 (en) * 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP2000323487A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP3317935B2 (ja) * 1999-09-01 2002-08-26 九州日本電気株式会社 プラズマ処理装置
JP2001155899A (ja) * 1999-11-25 2001-06-08 Tadahiro Omi プラズマプロセス装置およびプラズマ装置を用いたプロセス
US6998152B2 (en) * 1999-12-20 2006-02-14 Micron Technology, Inc. Chemical vapor deposition methods utilizing ionic liquids
US6302963B1 (en) * 1999-12-21 2001-10-16 Axcelis Technologies, Inc. Bell jar having integral gas distribution channeling
US6306247B1 (en) 2000-04-19 2001-10-23 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for preventing etch chamber contamination
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
US6503331B1 (en) * 2000-09-12 2003-01-07 Applied Materials, Inc. Tungsten chamber with stationary heater
KR100345304B1 (ko) * 2000-10-12 2002-07-25 한국전자통신연구원 수직형 초고진공 화학증착장치
JP4791637B2 (ja) 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
JP2003209063A (ja) * 2001-11-08 2003-07-25 Tokyo Electron Ltd 熱処理装置および熱処理方法
KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
KR100634288B1 (ko) * 2003-12-01 2006-10-16 야스히로 모리 고체물질의 표면 개질방법 및 표면 개질된 고체물질
US20050194374A1 (en) * 2004-03-02 2005-09-08 Applied Materials, Inc. Heated ceramic substrate support with protective coating
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US7842135B2 (en) * 2006-01-09 2010-11-30 Aixtron Ag Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
TWD126123S1 (zh) * 2007-06-06 2008-11-21 東京威力科創股份有限公司 晶圓保持具
TWD126122S1 (zh) * 2007-06-06 2008-11-21 東京威力科創股份有限公司 晶圓保持具
JP2010016225A (ja) * 2008-07-04 2010-01-21 Tokyo Electron Ltd 温度調節機構および温度調節機構を用いた半導体製造装置
JP5308733B2 (ja) * 2008-08-07 2013-10-09 富士電機株式会社 非一体型カソード電極及びプラズマｃｖｄ装置
JP4564570B2 (ja) * 2009-03-10 2010-10-20 三井造船株式会社 原子層堆積装置
US8496894B2 (en) 2010-02-04 2013-07-30 ADA-ES, Inc. Method and system for controlling mercury emissions from coal-fired thermal processes
US8951487B2 (en) 2010-10-25 2015-02-10 ADA-ES, Inc. Hot-side method and system
EP2360292B1 (de) * 2010-02-08 2012-03-28 Roth & Rau AG Paralleler Plattenreaktor zur gleichmäßigen Dünnfilmablagerung mit reduzierter Werkzeugaufstellfläche
US9478428B2 (en) 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
JP5604289B2 (ja) * 2010-12-22 2014-10-08 東京エレクトロン株式会社 成膜装置
JP5243519B2 (ja) * 2010-12-22 2013-07-24 東京エレクトロン株式会社 成膜装置
US8845986B2 (en) 2011-05-13 2014-09-30 ADA-ES, Inc. Process to reduce emissions of nitrogen oxides and mercury from coal-fired boilers
CN102400111B (zh) * 2011-11-21 2016-06-15 汉能太阳能光伏科技有限公司 一种lpcvd工艺腔加热系统
US8883099B2 (en) 2012-04-11 2014-11-11 ADA-ES, Inc. Control of wet scrubber oxidation inhibitor and byproduct recovery
US9957454B2 (en) 2012-08-10 2018-05-01 ADA-ES, Inc. Method and additive for controlling nitrogen oxide emissions
CN205177785U (zh) * 2013-03-14 2016-04-20 应用材料公司 处理腔室及用于将热线源耦接至该处理腔室的装置
CN103276373B (zh) * 2013-05-28 2015-08-19 南方科技大学 一种pecvd装置
US10145013B2 (en) 2014-01-27 2018-12-04 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems
US9631276B2 (en) * 2014-11-26 2017-04-25 Lam Research Corporation Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition
US9920844B2 (en) 2014-11-26 2018-03-20 Lam Research Corporation Valve manifold deadleg elimination via reentrant flow path
CN117265507A (zh) * 2016-11-11 2023-12-22 优材科技有限公司 加热器模块、薄膜沉积装置及方法
JP6875918B2 (ja) * 2017-03-31 2021-05-26 日本製鉄株式会社 黒色めっき鋼板の製造装置および製造システム
US11661654B2 (en) 2018-04-18 2023-05-30 Lam Research Corporation Substrate processing systems including gas delivery system with reduced dead legs
TWI756117B (zh) * 2021-04-23 2022-02-21 財團法人國家實驗研究院 晶圓級二維材料沉積裝置
CN114318543A (zh) * 2021-12-28 2022-04-12 江苏布里其曼科技股份有限公司 半极性氮化镓外延层结构制造系统及方法
KR20240094227A (ko) * 2022-12-15 2024-06-25 세메스 주식회사 기판 처리 장치
CN116516319B (zh) * 2023-05-16 2025-08-19 无锡金源半导体科技有限公司 一种喷淋组件及薄膜沉积装置
CN116870520B (zh) * 2023-08-21 2025-11-25 台湾钙钛矿科技股份有限公司 低压纳米结晶装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4493997A (en) * 1982-09-01 1985-01-15 The Singer Company Fiber optic sensor for shaft state
JPS5959876A (ja) 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
JPS59112615A (ja) * 1982-12-17 1984-06-29 Matsushita Electric Ind Co Ltd 気相反応装置
JPS59121915A (ja) * 1982-12-28 1984-07-14 Hitachi Ltd 気相成長装置
US4504730A (en) * 1983-10-04 1985-03-12 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
JPS6126218A (ja) * 1984-07-16 1986-02-05 Matsushita Electric Ind Co Ltd 気相成長装置
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0663098B2 (ja) * 1989-01-11 1994-08-17 国際電気株式会社 プラズマｃｖｄ装置
EP0382988A1 (de) * 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Anlage zur chemischen Dampfphasenausscheidung
JP2662722B2 (ja) * 1990-01-12 1997-10-15 東京エレクトロン株式会社 バッチ式熱処理装置
DE4029268C2 (de) * 1990-09-14 1995-07-06 Balzers Hochvakuum Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
JP2532401Y2 (ja) * 1991-04-16 1997-04-16 ソニー株式会社 バイアスｅｃｒプラズマｃｖｄ装置
GB2256085A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JP3230836B2 (ja) * 1992-04-09 2001-11-19 東京エレクトロン株式会社 熱処理装置
JP3164248B2 (ja) * 1992-06-11 2001-05-08 東京エレクトロン株式会社 熱処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
WO1997009737A1 (en) * 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber

Also Published As

Publication number Publication date
EP0717126B1 (de) 2001-09-05
US6026764A (en) 2000-02-22
JP3889074B2 (ja) 2007-03-07
EP0717126A2 (de) 1996-06-19
US6190460B1 (en) 2001-02-20
DE69522539T2 (de) 2002-05-02
US5928427A (en) 1999-07-27
US6009831A (en) 2000-01-04
EP0717126A3 (de) 1996-12-18
JPH08250441A (ja) 1996-09-27
DE69522539D1 (de) 2001-10-11
TW340138B (en) 1998-09-11

Similar Documents

Publication Publication Date Title
ATE205263T1 (de) Vorrichtung zur chemischen dampfabscheidung bei niedrigem druck
US5234540A (en) Process for etching oxide films in a sealed photochemical reactor
US5997963A (en) Microchamber
TW332304B (en) Improved gas diffuser plate assembly and RF electrode
DE69007733D1 (de) Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
GB2346898A (en) Deposition of a siloxane containing polymer
AU538152B2 (en) Chemical vapour deposition apparatus and process
ATE227471T1 (de) Distanzstück-maske für plättchen auf einer substratträger-spannvorrichtung und herstellungsverfahren dafür
TW329535B (en) Plasma reactor with heated source of a polymerhardening precursor material
TW372329B (en) Manufacturing method of semiconductor apparatus and manufacturing apparatus of semiconductor
AU1822288A (en) Method of treating surfaces of substrates with the aid of a plasma
EP1722403A3 (de) Herstellungsmethode für eine Dünnfilmhalbleiteranordnung
EP1209251A3 (de) System zur Temperaturreglung eines Wafers
EP0456479A3 (en) Pattern forming process, apparatus for forming said pattern and process for preparing semiconductor device utilizing said pattern forming process
DE69718321D1 (de) Verfahren und vorrichtung zur temperaturregelung in einer plasma-behandlungskammer
ATE411409T1 (de) Verfahren zur chemischen gasphasenabscheidung unter kontrollierter atmosphäre
DE59602132D1 (de) Verfahren und Vorrichtung zur Behandlung von Substratoberflächen
NO940416D0 (no) Fremgangsmaate for tetning av en kanal
ATE213093T1 (de) Dotierverfahren zur herstellung von homoübergängen in halbleitersubstraten
CA2354925A1 (en) Apparatus and method for coating substrates
ATE132775T1 (de) Verfahren und vorrichtung zum beschichten von substraten mit hochtemperaturbeständigen kunststoffen
DE3886754D1 (de) Vorrichtung zum Plasma- oder reaktiven Ionenätzen und Verfahren zum Ätzen schlecht wärmeleitender Substrate.
KR940001263A (ko) 성막장치
EP0727826A3 (de) Herstellungsverfahren für einen dünnen Halbleiterfilm und Plasma-CVD-Gerät zur Verwendung in diesen Verfahren
AU1152201A (en) Method and apparatus for thermoforming of plastic sheets

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties